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    • 5. 发明公开
    • Thin-film transistor and method of fabricating the same
    • 薄膜晶体管及其制造方法
    • EP0597641A2
    • 1994-05-18
    • EP93308863.5
    • 1993-11-05
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • Komori, KazunoriTakeda, MamoruTakubo, Yoneharu
    • H01L29/772H01L29/41
    • H01L29/41733
    • A thin-film transistor of an inverted-staggered structure includes a semiconductor layer (4,6) with a channel portion, a protective insulating film (9) extending on the channel portion of the semiconductor layer (4), a source electrode (7), and a drain electrode (8). The protective insulating film (9) has a rectangular shape with four corners, and each of two of the corners overlaps one of the source electrode and the drain electrode while two others of the corners overlap neither the source electrode nor the drain electrode. The thin-film transistor may be modified so that one of the corners overlap one of the source electrode and the drain electrode while three others of the corners overlap neither the source electrode nor the drain electrode.
    • 一种倒置交错结构的薄膜晶体管包括具有沟道部分的半导体层(4,6),在半导体层(4)的沟道部分上延伸的保护绝缘膜(9),源电极(7 )和漏电极(8)。 保护绝缘膜(9)具有四角形的矩形形状,并且两个角中的每一个与源电极和漏电极中的一个交叠,而另外两个角不交叠源电极和漏电极。 可以修改薄膜晶体管,使得其中一个拐角与源电极和漏电极中的一个重叠,而另外三个拐角不交叠源电极和漏电极。
    • 8. 发明公开
    • Liquid crystal display device
    • 液晶显示装置
    • EP0465111A2
    • 1992-01-08
    • EP91305791.5
    • 1991-06-26
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • Takeda, MamoruHotta, SadayoshiYamashita, IchiroTamura, TatsuhikoTakubo, Yoneharu
    • G02F1/136G09G3/36
    • G02F1/13624G02F1/136213G09G3/3648G09G3/3659G09G2300/0809G09G2310/0205G09G2330/08
    • An improved arrangement of a liquid crystal display device is provided in which the redundancy of known but unwanted TFT (thin film transistor) defect is suppressed so that the yield per finished liquid crystal display device products can be increased without declination in the picture quality. Each pixel of the liquid crystal display device arranged at an intersection of one of scanning lines and one of signal lines is provided with two or three TFTs and also, a storage capacitor which is formed of a portion of a gate insulating layer sandwiched between its electrode and a preceding scanning line in the previous row with using no extra masking procedure. The source, drain and gate electrodes of both the first and third TFTs are coupled to the same signal line, the electrode of the same pixel and the adjacent scanning lines, respectively. The gate, source and drain electrodes of the second TFT are coupled respectively to the same scanning line to which the gate electrode of the first TFT is coupled, the electrode of the same pixel and the electrode of a succeeding pixel provided on the opposite side of the scanning line to the same pixel. The arrangement also has a scanning driver circuit capable of activating two scanning lines at the same time for sequential one-by-one scanning operation, whereby no fault in a reproduced image will be perceived in spite of the presence of a defective TFT.
    • 提供了一种液晶显示装置的改进配置,其中已知但不需要的TFT(薄膜晶体管)缺陷的冗余被抑制,使得每个完成的液晶显示装置产品的产量可以在图像质量没有偏差的情况下增加。 液晶显示装置的配置在一条扫描线和一条信号线交叉处的液晶显示装置的每个像素配备有两个或三个TFT,以及由栅极绝缘层夹在其电极之间的一部分形成的存储电容器 和前一行中的前一个扫描线,而不使用额外的掩蔽过程。 第一和第三TFT的源极,漏极和栅极分别连接到相同的信号线,同一像素的电极和相邻的扫描线。 第二TFT的栅极,源极和漏极分别连接到与第一TFT的栅极连接的同一条扫描线,同一像素的电极和设置在第一TFT的相反侧的连续像素的电极 扫描线到相同的像素。 该装置还具有扫描驱动器电路,该扫描驱动器电路能够同时激活两条扫描线,用于顺序逐一扫描操作,由此尽管存在有缺陷的TFT,也不会感知到再现图像中的故障。
    • 10. 发明公开
    • Thin-film transistor and method of fabricating the same
    • Dünnfilmtransistor和Verfahren zur Herstellung。
    • EP0597641A3
    • 1994-10-19
    • EP93308863.5
    • 1993-11-05
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • Komori, KazunoriTakeda, MamoruTakubo, Yoneharu
    • H01L29/772H01L29/41
    • H01L29/41733
    • A thin-film transistor of an inverted-staggered structure includes a semiconductor layer (4,6) with a channel portion, a protective insulating film (9) extending on the channel portion of the semiconductor layer (4), a source electrode (7), and a drain electrode (8). The protective insulating film (9) has a rectangular shape with four corners, and each of two of the corners overlaps one of the source electrode and the drain electrode while two others of the corners overlap neither the source electrode nor the drain electrode. The thin-film transistor may be modified so that one of the corners overlap one of the source electrode and the drain electrode while three others of the corners overlap neither the source electrode nor the drain electrode.
    • 反交错结构的薄膜晶体管包括具有沟道部分的半导体层(4,6),在半导体层(4)的沟道部分上延伸的保护绝缘膜(9),源电极(7) )和漏电极(8)。 保护绝缘膜(9)具有四角的矩形形状,两个角中的每一个与源电极和漏极之一重叠,另外两个角与源电极和漏电极都不重叠。 可以修改薄膜晶体管,使得其中一个角与源电极和漏极之一重叠,而另外三个角与源电极和漏电极都不重叠。