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    • 8. 发明申请
    • METHODS TO SHAPE THE ELECTRIC FIELD IN ELECTRON DEVICES, PASSIVATE DISLOCATIONS AND POINT DEFECTS, AND ENHANCE THE LUMINESCENCE EFFICIENCY OF OPTICAL DEVICES
    • 形成电子设备中的电场,钝化分离和点缺陷的方法,以及提高光器件的发光效率
    • WO2007059220A2
    • 2007-05-24
    • PCT/US2006/044362
    • 2006-11-15
    • THE REGENTS OF THE UNIVERSITY OF CALIFORNIAPALACIOS, TomasSHEN, LikunMISHRA, Umesh, K.
    • PALACIOS, TomasSHEN, LikunMISHRA, Umesh, K.
    • H01L29/739
    • H01L29/2003H01L29/207H01L29/402H01L29/66462H01L29/7786H01L29/7787H01L33/0095
    • A fluorine treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions is disclosed. A method to increase the breakdown voltage of AlGaN/GaN high electron mobility transistors, by the introduction of a controlled amount of dispersion into the device, is also disclosed. This dispersion is large enough to reduce the peak electric field in the channel, but low enough in order not to cause a significant decrease in the output power of the device. In this design, the whole transistor is passivated against dispersion with the exception of a small region 50 to 100 nm wide right next to the drain side of the gate. In that region, surface traps cause limited amounts of dispersion, that will spread the high electric field under the gate edge, therefore increasing the breakdown voltage. Three different methods to introduce dispersion in the 50 nm closest to the gate are described: (1) introduction of a small gap between the passivation and the gate metal, (2) gradually reducing the thickness of the passivation, and (3) gradually reducing the thickness of the AlGaN cap layer in the region close the gate.
    • 公开了可以在1,2或3维度的电子设备中形成电场分布的氟处理。 还公开了通过将受控量的色散引入到器件中来增加AlGaN / GaN高电子迁移率晶体管的击穿电压的方法。 该色散足够大以减少通道中的峰值电场,但是足够低以便不会导致器件的输出功率的显着降低。 在这种设计中,整个晶体管对于色散是钝化的,除了在栅极的漏极侧旁边的50至100nm宽的小区域之外。 在该区域中,表面陷阱引起有限量的色散,这将扩散栅极边缘处的高电场,从而增加击穿电压。 描述了在最接近栅极的50nm中引入色散的三种不同的方法:(1)在钝化和栅极金属之间引入小间隙,(2)逐渐减小钝化的厚度,和(3)逐渐降低 在关闭栅极的区域中的AlGaN盖层的厚度。