会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS SEMICONDUCTOR MATERIALS
    • 基于萘基的四羧酸二异氰酸酯化合物作为半导体材料
    • WO2008057610A8
    • 2009-07-23
    • PCT/US2007024342
    • 2007-11-21
    • EASTMAN KODAK COSHUKLA DEEPAKWELTER THOMAS ROBERTCAREY JEFFREY TODDRAJESWARAN MANJUAHEARN WENDY G
    • SHUKLA DEEPAKWELTER THOMAS ROBERTCAREY JEFFREY TODDRAJESWARAN MANJUAHEARN WENDY G
    • H01L51/10
    • H01L51/0053C09B5/62H01L51/0541H01L51/0545Y02E10/549
    • A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N'-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100°C.
    • 薄膜晶体管包括一层有机半导体材料,其包含构型受控的N,N'-二环烷基取代的萘-1,4,5,8-双 - 二甲酰亚胺化合物,其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环基 原子,条件是两个脂环中的至少一个必须是4-取代的环己基环,其中4-位上的取代基是4-取代的环己基环以外的唯一取代基,而不是酰亚胺键; 其中这些取代基被立体化学地分别置于酰亚胺氮取代基中基本上为反式或顺式位置之一。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法,优选通过升华沉积到衬底上,其中衬底温度不超过100℃。
    • 5. 发明申请
    • NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS SEMICONDUCTOR MATERIALS
    • 以萘为基础的四羧酸二酰亚胺化合物作为半导体材料
    • WO2008057610A3
    • 2008-07-24
    • PCT/US2007024342
    • 2007-11-21
    • EASTMAN KODAK COSHUKLA DEEPAKWELTER THOMAS ROBERTCAREY JEFFREY TODDRAJESWARAN MANJUAHEARN WENDY G
    • SHUKLA DEEPAKWELTER THOMAS ROBERTCAREY JEFFREY TODDRAJESWARAN MANJUAHEARN WENDY G
    • H01L51/10
    • H01L51/0053C09B5/62H01L51/0541H01L51/0545Y02E10/549
    • A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N'-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100°C.
    • 薄膜晶体管包含一层有机半导体材料,该层包含构象控制的N,N'-二环烷基取代的萘-1,4,5,8-双 - 羧酰亚胺化合物,其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环 其条件是两个脂环中的至少一个必须是4-取代的环己基环,其中4-位上的取代基是除酰亚胺连接以外的4-取代的环己基环上的唯一取代基; 其中这种取代基立体化学地分别设置为酰亚胺氮取代基的基本上反式或顺式位置之一。 这种晶体管可以进一步包括与所述材料接触的间隔开的第一和第二接触装置或电极。 还公开了一种用于制造有机薄膜晶体管器件的方法,优选通过升华沉积到衬底上,其中衬底温度不超过100℃。