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1. 发明申请

WO2006105265A3 MICRO-ELECTRO MECHANICAL SWITCH DESIGNS 审中-公开
标题翻译：微电机械开关设计
公开(公告)号：WO2006105265A3
公开(公告)日：2007-01-18
申请号：PCT/US2006011589
申请日：2006-03-29
申请人： MASSACHUSETTS INST TECHNOLOGY , BOZLER CARL O , BERRY SHAUN R , MULDAVIN JEREMY , KEAST CRAIG L
发明人： BOZLER CARL O , BERRY SHAUN R , MULDAVIN JEREMY , KEAST CRAIG L
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01G5/18 , H01G5/40 , H01H2059/0081
摘要： A capacitive RF switch and DC RF switch include a fixed electrode having a thin layer of metal and at least one pull-down electrode. A moving plate has a plurality of corrugations and a selective finger design. The capacitive switch includes a selective finger that comes into contact with the fixed electrode so as to minimize the stiction between the moving plate and the fixed electrode when the switch is closed. The DC switch comprises a plurality of dimples that are formed on the selective portion of the moving plate and are positioned to come into contact with the fixed electrode when the switch is closed so as to increase the contact force and lower the resistance between the moving plate and fixed electrode.
摘要翻译：电容RF开关和DC RF开关包括具有薄层金属和至少一个下拉电极的固定电极。移动板具有多个波纹和选择性手指设计。电容开关包括与固定电极接触的选择性手指，以便当开关闭合时使移动板和固定电极之间的静摩擦最小化。 DC开关包括形成在移动板的选择部分上并且当开关闭合时定位成与固定电极接触的多个凹坑，以便增加接触力并降低移动板之间的电阻和固定电极。

2. 发明申请

WO2008042478A9 WIDE BAND AND RADIO FREQUENCY WAVEGUIDE AND HYBRID INTEGRATION IN A SILICON PACKAGE 审中-公开
标题翻译：宽带和射频频率波导以及在硅封装中的混合集成
公开(公告)号：WO2008042478A9
公开(公告)日：2008-07-03
申请号：PCT/US2007070870
申请日：2007-06-11
申请人： MASSACHUSETTS INST TECHNOLOGY , BOZLER CARL O , MULDAVIN JEREMY , WYATT PETER W , KEAST CRAIG L , RABE STEVEN
发明人： BOZLER CARL O , MULDAVIN JEREMY , WYATT PETER W , KEAST CRAIG L , RABE STEVEN
IPC分类号： H01L23/053 , H01L23/31 , H01L23/66 , H01P1/12 , H01P3/06 , H03H9/10
CPC分类号： H01P3/08 , B81B7/0064 , B81B2201/014 , B81B2207/07 , B81C2203/0109 , B81C2203/036 , H01L2924/0002 , H01L2924/00
摘要： A device includes a device wafer (400) having a circuit component (375) formed thereon and having vias (300) formed therein and a cap wafer (100) bonded to the device wafer. The cap wafer has a cavity (250) therein. The cavity has a post (200) formed therein, and the post is positioned to mechanically support the vias formed in the device wafer. The cavity has a volume, the volume substantially enclosing the circuit component formed on the device wafer. The cavity has a width and height such that an impedance of a transmission line is dependent upon the width and height of the cavity, or the impedance of a transmission line is dependent upon the width of a center conductor (350) within the cavity.
摘要翻译：一种器件包括器件晶片（400），该器件晶片具有在其上形成的电路部件（375）并且具有形成在其中的通孔（300）以及结合到器件晶片的盖晶片（100）。盖晶片中具有空腔（250）。该空腔具有形成在其中的柱（200），并且该柱被定位成机械地支撑形成在器件晶片中的通孔。该空腔具有一个体积，该体积基本上封装在器件晶片上形成的电路组件。腔具有宽度和高度，使得传输线的阻抗取决于腔的宽度和高度，或者传输线的阻抗取决于腔内的中心导体（350）的宽度。

3. 发明申请

WO2008042478A2 WIDE BAND AND RADIO FREQUENCY WAVEGUIDE AND HYBRID INTEGRATION IN A SILICON PACKAGE 审中-公开
标题翻译：宽带和无线电频率波形和硅包装中的混合集成
公开(公告)号：WO2008042478A2
公开(公告)日：2008-04-10
申请号：PCT/US2007070870
申请日：2007-06-11
申请人： MASSACHUSETTS INST TECHNOLOGY , BOZLER CARL O , MULDAVIN JEREMY , WYATT PETER W , KEAST CRAIG L , RABE STEVEN
发明人： BOZLER CARL O , MULDAVIN JEREMY , WYATT PETER W , KEAST CRAIG L , RABE STEVEN
CPC分类号： H01P3/08 , B81B7/0064 , B81B2201/014 , B81B2207/07 , B81C2203/0109 , B81C2203/036 , H01L2924/0002 , H01L2924/00
摘要： A device includes a device wafer having a circuit component formed thereon and having vias formed therein and a cap wafer bonded to the device wafer. The cap wafer has a cavity therein. The cavity has a post formed therein, and the post is positioned to mechanically support the vias formed in the device wafer. The cavity has a volume, the volume substantially enclosing the circuit component formed on the device wafer. The cavity has a width and height such that an impedance of a transmission line is dependent upon the width and height of the cavity, or the impedance of a transmission line is dependent upon the width of a center conductor within the cavity.
摘要翻译：一种器件包括具有形成在其上的电路部件并且具有形成在其中的通孔的器件晶片和结合到器件晶片的帽晶片。盖晶片在其中具有空腔。空腔具有形成在其中的柱，并且柱被定位成机械地支撑形成在器件晶片中的通孔。空腔具有体积，该体积基本上包围形成在器件晶片上的电路部件。空腔具有宽度和高度，使得传输线的阻抗取决于空腔的宽度和高度，或者传输线的阻抗取决于腔内的中心导体的宽度。

4. 发明申请

WO2008064216A3 MICRO-ELECTRO MECHANICAL TUNNELING SWITCH 审中-公开
标题翻译：微电机械隧道开关
公开(公告)号：WO2008064216A3
公开(公告)日：2008-11-27
申请号：PCT/US2007085224
申请日：2007-11-20
申请人： MASSACHUSETTS INST TECHNOLOGY , BOZLER CARL O , KEAST CRAIG L , MULDAVIN JEREMY
发明人： BOZLER CARL O , KEAST CRAIG L , MULDAVIN JEREMY
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , B81B3/001 , B81B2201/014 , H01H2059/0063 , H01H2059/0072
摘要： A micro-electromechanical system switch includes a substrate (40) and a plurality of actuating electrodes (3000) formed the substrate wherein each actuating electrode is activatable. A cantilever beam (10) has a first end and a second end and a plurality of stops (2000) formed thereon. The plurality of stops engages the substrate between the plurality of actuating electrode. A contact area (2100) is formed in the substrate and located to engage the second end (2000) of the cantilever beam. A voltage source applies a voltage to each actuating electrode independently in a sequence from an actuating electrode located adjacent to the first end of the cantilever beam to an actuating electrode located adjacent to the second end of the cantilever beam so that the plurality of stops sequentially engage the substrate between the plurality of actuating electrodes.
摘要翻译：微机电系统开关包括基板（40）和形成基板的多个致动电极（3000），其中每个致动电极都是可激活的。悬臂梁（10）具有形成在其上的第一端和第二端以及多个挡块（2000）。多个止动件与多个致动电极之间的基板接合。接触区域（2100）形成在基板中并且被定位成接合悬臂梁的第二端（2000）。电压源以与从悬臂梁的第一端相邻的致动电极的顺序独立地向每个致动电极施加电压到与悬臂梁的第二端相邻的致动电极，使得多个停止件顺序地接合多个致动电极之间的基板。

5. 发明申请

WO2009076192A3 MECHANICAL MEMORY TRANSISTOR 审中-公开
标题翻译：机械存储晶体管
公开(公告)号：WO2009076192A3
公开(公告)日：2009-09-24
申请号：PCT/US2008085654
申请日：2008-12-05
申请人： MASSACHUSETTS INST TECHNOLOGY , BOZLER CARL O
发明人： BOZLER CARL O
IPC分类号： H01L21/336 , H01L21/8242 , H01L27/108
CPC分类号： H01L29/84 , B82Y10/00 , G11C23/00 , H01H59/0009 , H01L29/685 , H01L29/78
摘要： A mechanical memory transistor includes a substrate having formed thereon a source region and a drain region. An oxide is formed upon a portion of the source region and upon a portion of the drain region. A pull up electrode is positioned above the substrate such that a gap is formed between the pull up electrode and the substrate. A movable gate has a first position and a second position. The movable gate is located in the gap between the pull up electrode and the substrate. The movable gate is in contact with the pull up electrode when the movable gate is in a first position and is in contact with the oxide to form a gate region when the movable gate is in the second position. The movable gate, in conjunction with the source region and the drain region and when the movable gate is in the second position, form a transistor that can be utilized as a non-volatile memory element.
摘要翻译：机械存储晶体管包括其上形成有源极区和漏极区的衬底。在源区的一部分上和漏极区的一部分上形成氧化物。上拉电极位于衬底之上，使得在上拉电极和衬底之间形成间隙。可动门具有第一位置和第二位置。可移动栅极位于上拉电极和基板之间的间隙中。当可移动栅极处于第一位置时，可移动栅极与上拉电极接触并且当可移动栅极处于第二位置时与可动栅极接触以形成栅极区域。可移动栅极与源极区域和漏极区域结合，并且当可移动栅极处于第二位置时，形成可用作非易失性存储元件的晶体管。

6. 发明专利

JPH0620945A METHOD FOR MANUFACTURE OF THIN-FILM OF SEMICONDUCTOR MATERIAL 失效
公开(公告)号：JPH0620945A
公开(公告)日：1994-01-28
申请号：JP32503791
申请日：1991-11-14
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , FAN JOHN C C , MCCLELLAND ROBERT W
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/043 , H01L31/0687 , H01L31/18 , H01S5/02
摘要： PURPOSE: To provide a thin sheet of the semiconductor material of a crystal which is epitaxially grown on a reutilizable crystal base material by forming the sheet of a crystal material on the surface of a growth mask, formed on the crystal base material and the crystal base material and separating the sheet from the crystal base material. CONSTITUTION: A growth mask 12 provided with a slit is formed on a crystal base material 10. Then, when the crystal is epitaxially grown on the masked crystal base material 10, crystal growth occurs first in the exposed base material region of the bottom part of the slit 14 in the growth mask 12 and is continued in a side direction on the surface of the mask 12 thereafter, and a continuous sheet 18 of the crystal material is formed. Then, the sheet 18 is cloven and separated from the re-utilizable crystal base material 10 along a rib 16. Thus, the base material is used for many times, a large number of thin crystal material sheets are grown epitaxially, and the manufacture cost of the thin sheet of the crystal material is reduced.

7. 发明专利

JPH02283014A METHOD OF FORMING CRYSTAL METAL SHEET ON CARRIER 失效
公开(公告)号：JPH02283014A
公开(公告)日：1990-11-20
申请号：JP16646789
申请日：1989-06-28
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , FAN JOHN C C , MCCLELLAND ROBERT W
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/043 , H01L31/0687 , H01L31/18 , H01S5/02
摘要： PURPOSE: To use the support again by growing laterally a crystalline material grown at a region of the crystalline support exposed through a grown mask thereby forming the sheet made of a crystalline material on the mask surface and the crystalline support and separating the sheet made of the crystalline material from the support. CONSTITUTION: A crystalline grown mask 12 is applied to the support 10. The mask 12 has a slit 14 as a typical pattern of an aperture to expose the support 10. The growing of the crystalline takes place at first in a region of the support exposed at a bottom of the slit 14 in the grown mask 12. The growing continues upward through the slit 14 and a sheet 18a is over-grown laterally on the surface of the mask 12 under a proper growing condition. The deposition and growing continues till the sheets 18 are adhered together to form a continuous sheet 18 made of the crystalline material. After a film resulting from the over-growing in the lateral direction is made complete, the film is separated from the crystalline support.

8. 发明专利

JPH02283077A MANUFACTURE OF TANDEM TYPE SOLAR CELL 失效
公开(公告)号：JPH02283077A
公开(公告)日：1990-11-20
申请号：JP16646889
申请日：1989-06-28
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , FAN JOHN C C , MCCLELLAND ROBERT W
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/043 , H01L31/0687 , H01L31/18 , H01S5/02
摘要： PURPOSE: To form the continuous sheet of material from a discontinuous growing area formed in the exposed area of a supporting body by depositing crystalline material on the exposed area of the supporting body and then making it overgrow in a horizontal direction. CONSTITUTION: A crystal growing mask 12 with the pattern of a slit 14 is applied onto a comparatively thick reusable crystallized supporting body 10. The growth of an AsCl3 -Ga-H2 vapor phase epitaxy crystal starts in the area of an exposed supporting body at the bottom of a slit 14 in a growing mask 12. Growth is continued upward through the slit 14 and after then continued horizontally on the surface of the mask 12 to obtain a horizontally overgrown sheet 18a. After a horizontally overgrown film if completed, this film 18 is separated from the body 10.

9. 发明公开

EP0011629A1 SHALLOW-HOMOJUNCTION SOLAR CELLS. 失效
标题翻译：太阳能电池肤浅HOMO过渡。
公开(公告)号：EP0011629A1
公开(公告)日：1980-06-11
申请号：EP79900329
申请日：1979-10-23
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , CHAPMAN RALPH L , FAN JOHN C C , MCCLELLAND ROBERT W
IPC分类号： H01L31/04 , H01L31/068 , C25D5/00 , C25D11/32 , H01L31/06
CPC分类号： H01L31/068 , Y02E10/547
摘要： Ameliorations aux cellules solaires a homojonction superficielle formees par une pluralite de couches de materiau semi-conducteur a espace d'interaction directe tel que GaAs, ainsi que leur fabrication. Les cellules solaires a homojonction superficielle possedent une structure n+/p/p+ (26, 24, 22) dans laquelle la couche superieure n+ (26) est limitee en epaisseur, ce qui permet d'avoir une activite porteuse importante au niveau de la couche semi-conductrice inferieure (24). Un revetement antireflechissant (28) est applique sur la couche superieure n+ (26), application realisee, de preference, par traitement anodique. Ces cellules solaires peuvent etre produites sur des substrats relativement peu couteux tels que le silicium ou le germanium.

10. 发明专利

DE3177084D1 METHOD OF PRODUCING SHEETS OF CRYSTALLINE MATERIAL 未知
公开(公告)号：DE3177084D1
公开(公告)日：1989-09-21
申请号：DE3177084
申请日：1981-04-06
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , MCCLELLAND ROBERT W , FAN JOHN C C
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/043 , H01L31/0687 , H01L31/18 , H01S5/02 , C30B13/34 , C30B1/02 , C30B13/24

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