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2. 发明公开

EP2270879A4 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译： NITRID-HALBLEITER-LICHTEMISSIONSELEMENT
公开(公告)号：EP2270879A4
公开(公告)日：2013-08-07
申请号：EP09724676
申请日：2009-03-23
申请人： PANASONIC CORP , RIKEN
发明人： TAKANO TAKAYOSHI , TSUBAKI KENJI , HIRAYAMA HIDEKI , FUJIKAWA SACHIE
IPC分类号： H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32
CPC分类号： H01L33/12 , H01L33/02 , H01L33/025 , H01L33/32
摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6 , and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1 . The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6 . This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.
摘要翻译：本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5，发光层6和p型氮化物半导电层7.第一缓冲层2层压到单晶衬底1的顶侧。 n型氮化物半导体层3层叠在第一缓冲层2的上侧。第三缓冲层5与第二缓冲层层叠在n型氮化物半导体层3的顶面 4插入其间。发光层6被层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化用于发光层6的生长的基底，以便减少发光层6中的穿透位错和残留变形。该氮化物半导体发光器件通过利用在第三缓冲层5中产生的载流子来减少发光层中的压电场。第三缓冲层5掺杂有用作供体的Si杂质。

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