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1. 发明授权

US08906490B2 Multicolor mask 有权
标题翻译：多色面膜
公开(公告)号：US08906490B2
公开(公告)日：2014-12-09
申请号：US11986102
申请日：2007-11-20
申请人： Lynn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
发明人： Lynn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
IPC分类号： G03F1/00 , G03F7/26 , H01L29/786 , H01L29/66 , G03F7/00 , H01L27/12 , G03F7/20
CPC分类号： G03F7/0007 , G03F1/14 , G03F7/2022 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/66765 , H01L29/7869 , Y10T428/24802
摘要： The invention relates to a process for forming a stacked transparent structure comprising providing a support, coating one side of said support with a multicolored mask, coating the other side of the support with a layer curable by visible light, and exposing the light-curable layer through the mask with visible light to cure the layer curable by light in exposed portions to form a cured pattern.
摘要翻译：本发明涉及一种用于形成层叠透明结构的方法，包括提供支撑体，用多色面罩涂覆所述支撑体的一侧，用可见光固化的层涂覆支撑体的另一侧，并将可光固化层通过具有可见光的掩模来固化由暴露部分中的光可固化的层以形成固化图案。

2. 发明授权

US08221964B2 Integrated color mask 有权
标题翻译：综合色罩
公开(公告)号：US08221964B2
公开(公告)日：2012-07-17
申请号：US11986068
申请日：2007-11-20
申请人： Lyn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
发明人： Lyn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
IPC分类号： G03F7/038 , G03F1/58
CPC分类号： H01L27/1288 , G03F7/2016 , G03F7/2018 , G03F7/40 , H01L27/1214 , H01L27/1225 , H01L29/66765 , H01L29/7869 , Y10T428/24851
摘要： The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.
摘要翻译：本发明涉及一种用于形成结构的方法，包括提供支撑体，用彩色掩模涂覆所述支撑体的一侧，涂覆可见光的可见光层，以及通过可见光将层暴露于彩色掩模以对该层进行光图案化。

3. 发明申请

US20090130397A1 Multicolor mask 有权
标题翻译：多色面膜
公开(公告)号：US20090130397A1
公开(公告)日：2009-05-21
申请号：US11986102
申请日：2007-11-20
申请人： Lyn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
发明人： Lyn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
IPC分类号： G03F1/00 , G03F7/26
CPC分类号： G03F7/0007 , G03F1/14 , G03F7/2022 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/66765 , H01L29/7869 , Y10T428/24802
摘要： The invention relates to a process for forming a stacked transparent structure comprising providing a support, coating one side of said support with a multicolored mask, coating the other side of the support with a layer curable by visible light, and exposing the light-curable layer through the mask with visible light to cure the layer curable by light in exposed portions to form a cured pattern.
摘要翻译：本发明涉及一种用于形成层叠透明结构的方法，包括提供支撑体，用多色面罩涂覆所述支撑体的一侧，用可见光固化的层涂覆支撑体的另一侧，并将可光固化层通过具有可见光的掩模来固化由暴露部分中的光可固化的层以形成固化图案。

4. 发明申请

US20120231239A1 INTEGRATED COLOR MASK 有权
标题翻译：集成彩色面膜
公开(公告)号：US20120231239A1
公开(公告)日：2012-09-13
申请号：US13474757
申请日：2012-05-18
申请人： Lyn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
发明人： Lyn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
IPC分类号： B32B3/10 , H01L29/78
CPC分类号： H01L27/1288 , G03F7/2016 , G03F7/2018 , G03F7/40 , H01L27/1214 , H01L27/1225 , H01L29/66765 , H01L29/7869 , Y10T428/24851
摘要： The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.
摘要翻译：本发明涉及一种用于形成结构的方法，包括提供支撑体，用彩色掩模涂覆所述支撑体的一侧，涂覆可见光的可见光层，以及通过可见光将层暴露于彩色掩模以对该层进行光图案化。

5. 发明申请

US20090130610A1 Integrated color mask 有权
标题翻译：综合色罩
公开(公告)号：US20090130610A1
公开(公告)日：2009-05-21
申请号：US11986068
申请日：2007-11-20
申请人： Lyn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
发明人： Lyn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
IPC分类号： G03F7/038
CPC分类号： H01L27/1288 , G03F7/2016 , G03F7/2018 , G03F7/40 , H01L27/1214 , H01L27/1225 , H01L29/66765 , H01L29/7869 , Y10T428/24851
摘要： The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.
摘要翻译：本发明涉及一种用于形成结构的方法，包括提供支撑体，用彩色掩模涂覆所述支撑体的一侧，涂覆可见光的可见光层，以及通过可见光将层暴露于彩色掩模以对该层进行光图案化。

6. 发明授权

US08715894B2 Integrated color mask 有权
标题翻译：综合色罩
公开(公告)号：US08715894B2
公开(公告)日：2014-05-06
申请号：US13474757
申请日：2012-05-18
申请人： Lyn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
发明人： Lyn M. Irving , David H. Levy , Mark E. Irving , Carolyn R. Ellinger
IPC分类号： G03F1/00
CPC分类号： H01L27/1288 , G03F7/2016 , G03F7/2018 , G03F7/40 , H01L27/1214 , H01L27/1225 , H01L29/66765 , H01L29/7869 , Y10T428/24851
摘要： The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.
摘要翻译：本发明涉及一种用于形成结构的方法，包括提供支撑体，用彩色掩模涂覆所述支撑体的一侧，涂覆可见光的可见光层，以及通过可见光将层暴露于彩色掩模以对该层进行光图案化。

7. 发明授权

US08846545B2 Method of forming patterned thin film dielectric stack 有权
标题翻译：形成图案化薄膜电介质叠层的方法
公开(公告)号：US08846545B2
公开(公告)日：2014-09-30
申请号：US13600292
申请日：2012-08-31
申请人： Carolyn R. Ellinger , David H. Levy , Shelby F. Nelson
发明人： Carolyn R. Ellinger , David H. Levy , Shelby F. Nelson
IPC分类号： H01L21/31 , H01L21/469 , H01L21/00 , H01L21/84 , H01L21/44
CPC分类号： C23C16/042 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02304 , H01L21/02422 , H01L21/02488 , H01L21/02521 , H01L21/02642 , H01L29/4908 , H01L29/66765
摘要： A method of producing an inorganic multi-layered thin film structure includes providing a substrate. A patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process. A second inorganic thin film material layer is selectively deposited on the region of the substrate where the thin film deposition inhibiting material layer is not present using an atomic layer deposition process.
摘要翻译：无机多层薄膜结构体的制造方法包括提供基板。在衬底上设置有图案化的沉积抑制材料层。使用原子层沉积工艺，在不存在沉积抑制材料层的基板的区域上选择性地沉积第一无机薄膜材料层。使用原子层沉积工艺，在不存在薄膜沉积抑制材料层的基板的区域上选择性地沉积第二无机薄膜材料层。

8. 发明申请

US20140061869A1 ELECTRONIC ELEMENT INCLUDING DIELECTRIC STACK 审中-公开
标题翻译：电子元件包括电介质堆叠
公开(公告)号：US20140061869A1
公开(公告)日：2014-03-06
申请号：US13600266
申请日：2012-08-31
申请人： Shelby F. Nelson , Carolyn R. Ellinger , David H. Levy
发明人： Shelby F. Nelson , Carolyn R. Ellinger , David H. Levy
IPC分类号： H01L29/02
CPC分类号： H01L21/28008 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02315 , H01L21/32 , H01L29/4908 , H01L29/66765
摘要： An electronic element includes a substrate; a patterned first electrically conductive layer on the substrate; a patterned second electrically conductive layer on the substrate; and a dielectric stack on the substrate. A portion of the first electrically conductive layer and a portion of the second electrically conductive layer overlap each other such that an overlap region is present. At least a portion of the dielectric stack is positioned in the overlap region between the patterned first electrically conductive layer and the patterned second electrically conductive layer. The dielectric stack includes a first inorganic thin film dielectric material layer and a second inorganic thin film dielectric material layer. The first inorganic thin film dielectric material layer and the second inorganic thin film dielectric material layer have the same material composition.
摘要翻译：电子元件包括基板; 图案化的第一导电层; 图案化的第二导电层; 和基片上的电介质叠层。第一导电层的一部分和第二导电层的一部分彼此重叠，使得存在重叠区域。电介质堆叠的至少一部分位于图案化的第一导电层和图案化的第二导电层之间的重叠区域中。电介质堆叠包括第一无机薄膜电介质材料层和第二无机薄膜电介质材料层。第一无机薄膜电介质材料层和第二无机薄膜电介质材料层具有相同的材料组成。

9. 发明授权

US08927434B2 Patterned thin film dielectric stack formation 有权
标题翻译：图案化薄膜电介质叠层形成
公开(公告)号：US08927434B2
公开(公告)日：2015-01-06
申请号：US13600274
申请日：2012-08-31
申请人： Carolyn R. Ellinger , David H. Levy , Shelby F. Nelson
发明人： Carolyn R. Ellinger , David H. Levy , Shelby F. Nelson
IPC分类号： H01L21/314
CPC分类号： H01L21/02348 , C23C16/04 , C23C16/45525 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02299 , H01L21/02334 , H01L21/0234 , H01L29/4908
摘要： A method of producing a patterned inorganic thin film dielectric stack includes providing a substrate. A first patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the first deposition inhibiting material layer is not present using an atomic layer deposition process. The first deposition inhibiting and first inorganic thin film dielectric material layers are simultaneously treated after deposition of the first inorganic thin film dielectric material layer. A second patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the second deposition inhibiting material layer is not present using an atomic layer deposition process. The first and second inorganic thin film dielectric material layers form a patterned inorganic thin film dielectric stack.
摘要翻译：制造图案化无机薄膜电介质叠层的方法包括提供基板。第一图案化沉积抑制材料层设置在基板上。使用原子层沉积工艺，在不存在第一沉积抑制材料层的基板的区域上选择性地沉积第一无机薄膜电介质材料层。在沉积第一无机薄膜电介质材料层之后，同时处理第一沉积抑制和第一无机薄膜电介质材料层。第二图案化的沉积抑制材料层设置在基板上。使用原子层沉积工艺，在不存在第二沉积抑制材料层的基板的区域上选择性地沉积第二无机薄膜电介质材料层。第一和第二无机薄膜电介质材料层形成图案化的无机薄膜电介质叠层。

10. 发明授权

US08653516B1 High performance thin film transistor 有权
标题翻译：高性能薄膜晶体管
公开(公告)号：US08653516B1
公开(公告)日：2014-02-18
申请号：US13600323
申请日：2012-08-31
申请人： Shelby F. Nelson , Carolyn R. Ellinger , David H. Levy
发明人： Shelby F. Nelson , Carolyn R. Ellinger , David H. Levy
IPC分类号： H01L29/10
CPC分类号： H01L29/4908 , H01L29/66969 , H01L29/7869
摘要： A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer, having a second pattern, is in contact with the first inorganic thin film dielectric layer. The first inorganic thin film dielectric layer and the second thin film dielectric layer have the same material composition. A third inorganic thin film dielectric layer has a third pattern. A semiconductor layer is in contact with and has the same pattern as the third inorganic thin film dielectric material layer. A source/drain includes a second electrically conductive layer stack.
摘要翻译：晶体管包括衬底; 栅极，包括在所述衬底上的第一导电层堆叠; 以及第一无机薄膜电介质层，其具有第一图案的第一无机薄膜电介质层。具有第二图案的第二无机薄膜电介质层与第一无机薄膜电介质层接触。第一无机薄膜电介质层和第二薄膜电介质层具有相同的材料组成。第三无机薄膜电介质层具有第三图案。半导体层与第三无机薄膜电介质材料层接触并具有相同的图案。源极/漏极包括第二导电层堆叠。

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