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    • 1. 发明授权
    • Method for sensing and recovery against buffer overflow attacks and apparatus thereof
    • 用于针对缓冲器溢出攻击的感测和恢复的方法及其装置
    • US07814333B2
    • 2010-10-12
    • US10598970
    • 2005-03-18
    • Lynn ChoiYong Shin
    • Lynn ChoiYong Shin
    • G06F12/14
    • G06F12/1441G06F21/52
    • Methods and apparatuses for detecting and recovering from a buffer overflow attack are provided. A method of recovering an operation state of a processor from a buffer overflow attach includes: detecting whether a buffer overflow attack is made on any write operation while storing write operations that are potential targets of buffer overflow attacks in a predetermined location instead of an original destination to store write operations; storing the contents stored in the predetermined location at a predetermined interval in the original destination for storing write operations if no buffer overflow attack is detected and discarding unsafe write operations subsequent to a buffer overflow attack if a buffer overflow attack is detected; and ignoring the unsafe write operations subsequent to the buffer overflow attack if a buffer overflow attack is detected. Therefore, a buffer overflow attack occurring in a computer can be effectively detected, and damage of a system which is attacked can be minimized and the system can be recovered or return to the original state before the attack. A system can be effectively protected while minimizing reduction in performance of the computer system according to a method used to implement the present invention, thereby greatly improving the environments under which the computer and the Internet are used.
    • 提供了从缓冲区溢出攻击检测和恢复的方法和装置。 从缓冲器溢出附件恢复处理器的操作状态的方法包括:在存储作为缓冲器溢出攻击的潜在目标的写操作而不是原始目的地的情况下,检测是否对任何写入操作进行缓冲器溢出攻击 存储写操作; 如果没有检测到缓冲区溢出攻击并且在检测到缓冲器溢出攻击之后丢弃缓冲器溢出攻击之后的不安全写入操作,则将存储在预定位置的预定位置的内容以原始目的地存储在存储写入操作中; 并且如果检测到缓冲区溢出攻击,则忽略缓冲区溢出攻击之后的不安全写入操作。 因此,可以有效地检测计算机中发生的缓冲区溢出攻击,并且可以最小化被攻击的系统的损坏,并且可以在攻击之前恢复系统或恢复到原始状态。 可以有效地保护系统,同时根据用于实现本发明的方法使计算机系统的性能降至最低,从而大大改善使用计算机和因特网的环境。
    • 2. 发明申请
    • Method for sensing and recovery against buffer overflow attacks and apparatus thereof
    • 用于针对缓冲器溢出攻击的感测和恢复的方法及其装置
    • US20070180524A1
    • 2007-08-02
    • US10598970
    • 2005-03-18
    • Lynn ChoiYong Shin
    • Lynn ChoiYong Shin
    • G06F12/14
    • G06F12/1441G06F21/52
    • Methods and apparatuses for detecting and recovering from a buffer overflow attack are provided. A method of recovering an operation state of a processor from a buffer overflow attach includes: detecting whether a buffer overflow attack is made on any write operation while storing write operations that are potential targets of buffer overflow attacks in a predetermined location instead of an original destination to store write operations; storing the contents stored in the predetermined location at a predetermined interval in the original destination for storing write operations if no buffer overflow attack is detected and discarding unsafe write operations subsequent to a buffer overflow attack if a buffer overflow attack is detected; and ignoring the unsafe write operations subsequent to the buffer overflow attack if a buffer overflow attack is detected. Therefore, a buffer overflow attack occurring in a computer can be effectively detected, and damage of a system which is attacked can be minimized and the system can be recovered or return to the original state before the attack. A system can be effectively protected while minimizing reduction in performance of the computer system according to a method used to implement the present invention, thereby greatly improving the environments under which the computer and the Internet are used.
    • 提供了从缓冲区溢出攻击检测和恢复的方法和装置。 从缓冲器溢出附件恢复处理器的操作状态的方法包括:在存储作为缓冲器溢出攻击的潜在目标的写操作而不是原始目的地的情况下,检测是否对任何写入操作进行缓冲器溢出攻击 存储写操作; 如果没有检测到缓冲区溢出攻击并且在检测到缓冲器溢出攻击之后丢弃缓冲器溢出攻击之后的不安全写入操作,则将存储在预定位置的预定位置的内容以原始目的地存储在存储写入操作中; 并且如果检测到缓冲区溢出攻击,则忽略缓冲区溢出攻击之后的不安全写入操作。 因此,可以有效地检测计算机中发生的缓冲区溢出攻击,并且可以最小化被攻击的系统的损坏,并且可以在攻击之前恢复系统或恢复到原始状态。 可以有效地保护系统,同时根据用于实现本发明的方法使计算机系统的性能降至最低,从而大大改善使用计算机和因特网的环境。
    • 3. 发明申请
    • Method of controlling communication between devices in a network and apparatus for the same
    • 控制网络中的设备之间的通信的方法及其设备
    • US20070064689A1
    • 2007-03-22
    • US10572085
    • 2004-09-16
    • Yong ShinSeok SongYong ShinYong Ju
    • Yong ShinSeok SongYong ShinYong Ju
    • H04L12/56
    • H04L29/12028H04L61/103
    • Disclosed is a technology by which rules on communication permission or control are enforced to network internal devices such that an environment which looks as if to have a virtual firewall existing between network internal devices can be established. A communication control apparatus for this is located on the same level in the network as other devices are located. By using this communication control apparatus, an address resolution protocol (ARP) packet in which a data link layer address is manipulated is provided to devices that are the objects of communication cut-off, such that data packets transmitted by the communication cut-off object devices are transmitted to manipulated abnormal addresses. By doing so, communication with the communication cut-off object devices is cut off. For a device which is in a communication cut-off state although the device is not an object of communication cut-off any more, the communication control apparatus transmits an ARP packet including normal address information to the device such that the communication cut-off state is canceled.
    • 公开了一种技术,通过该规则对通信许可或控制进行网络内部设备的执行,从而可以建立在网络内部设备之间存在虚拟防火墙的环境。 用于其的通信控制装置位于与其他设备所在的网络相同的级上。 通过使用该通信控制装置,将其中操作了数据链路层地址的地址解析协议(ARP)分组提供给作为通信切断对象的设备,使得由通信切断对象发送的数据分组 设备被传送到操纵的异常地址。 通过这样做,与通信中断对象设备的通信被切断。 对于处于通信切断状态的设备,尽管设备不再是通信中断的对象,但是通信控制设备向设备发送包括普通地址信息的ARP分组,使得通信中断状态 被取消。
    • 6. 发明申请
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US20050118763A1
    • 2005-06-02
    • US10889919
    • 2004-07-13
    • Yong Shin
    • Yong Shin
    • H01L21/336H01L21/8242
    • H01L27/10858
    • Disclosed is a method for manufacturing a semiconductor device. The method comprises the steps of: providing a first substrate and a second substrate; forming a capacitor and a gate line on a first surface of the first substrate; forming an insulating layer on a resultant structure of the first substrate; bonding the second substrate to the insulating layer of the first substrate; turning a resultant structure over in such a manner that a second surface of the first substrate is an upper surface of the resultant structure; polishing the second surface of the first substrate by a predetermined thickness; forming an isolation layer for defining an active region by performing an isolation process with respect to the second surface of the first substrate for which a polishing process is finished; and forming a bit line on the active region in the first substrate.
    • 公开了半导体器件的制造方法。 该方法包括以下步骤:提供第一基底和第二基底; 在所述第一基板的第一表面上形成电容器和栅极线; 在所述第一基板的所得结构上形成绝缘层; 将第二基板接合到第一基板的绝缘层; 转动所得结构,使得第一基板的第二表面是所得结构的上表面; 将第一基板的第二表面抛光预定厚度; 通过对抛光处理结束的第一基板的第二表面执行隔离工艺来形成用于限定有源区的隔离层; 以及在第一衬底的有源区上形成位线。
    • 10. 发明申请
    • Method for manufacturing high voltage transistor
    • 制造高压晶体管的方法
    • US20060148185A1
    • 2006-07-06
    • US11320727
    • 2005-12-30
    • Yong Shin
    • Yong Shin
    • H01L21/336H01L21/425
    • H01L29/6659H01L21/823814H01L21/823864H01L29/7833
    • A method for manufacturing a high voltage transistor is disclosed. The method includes sequentially forming gate oxide films, polysilicon layers, and silicon nitride films on a semiconductor substrate; patterning the silicon nitride films, the polysilicon layers, and the gate oxide films using photolithographic and isotropic etching processes to form nitride film shades and polysilicon gate electrodes; implanting impurity ions into the substrate using the nitride film shades as protective barriers; performing an annealing process to form source and drain diffusion regions of a double diffusion structure; and removing the nitride film shades. Therefore, since the silicon nitride films are used as the protective barriers during impurity ion implantation, the source and drain diffusion regions can be formed in a double diffusion drain junction structure without forming a space oxide film. Also, the source and drain diffusion regions of the double diffusion drain junction structure can be stably formed by one pattern process and one ion implantation process.
    • 公开了一种用于制造高压晶体管的方法。 该方法包括在半导体衬底上依次形成栅极氧化膜,多晶硅层和氮化硅膜; 使用光刻和各向同性蚀刻工艺对氮化硅膜,多晶硅层和栅极氧化膜进行图案化以形成氮化物膜阴影和多晶硅栅电极; 使用氮化物膜作为保护屏障将杂质离子注入到衬底中; 进行退火处理以形成双扩散结构的源极和漏极扩散区; 并去除氮化物膜的阴影。 因此,由于在杂质离子注入期间使用氮化硅膜作为保护屏障,源极和漏极扩散区域可以形成在双扩散漏极结结构中,而不形成空间氧化膜。 此外,双扩散漏极结结构的源极和漏极扩散区域可以通过一个图案处理和一个离子注入工艺稳定地形成。