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1. 发明授权

US08470400B2 Graphene synthesis by chemical vapor deposition 有权
标题翻译：石墨烯化学气相沉积合成
公开(公告)号：US08470400B2
公开(公告)日：2013-06-25
申请号：US12774342
申请日：2010-05-05
申请人： Luigi Colombo , Xuesong Li , Rodney S. Ruoff
发明人： Luigi Colombo , Xuesong Li , Rodney S. Ruoff
IPC分类号： C23C16/00
CPC分类号： C23C16/26 , B82Y30/00 , B82Y40/00 , C01B32/186
摘要： Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.
摘要翻译：合成石墨烯薄膜的方法。石墨烯膜可以通过将基板上的金属或电介质加热到400℃和1400℃之间的温度来合成。将金属或电介质暴露于有机化合物，从而从金属或电介质上的有机化合物生长石墨烯。然后将金属或电介质冷却至室温。作为上述方法的结果，独立的石墨烯膜可以合成具有相当于天然石墨剥离的石墨烯的性质，该石墨烯的尺寸远大于在碳化硅，单晶硅衬底或天然石墨上可获得的尺寸。

2. 发明申请

US20110091647A1 GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION 有权
标题翻译：石墨合成化学蒸气沉积
公开(公告)号：US20110091647A1
公开(公告)日：2011-04-21
申请号：US12774342
申请日：2010-05-05
申请人： Luigi Colombo , Xuesong Li , Rodney S. Ruoff
发明人： Luigi Colombo , Xuesong Li , Rodney S. Ruoff
IPC分类号： C23C16/44 , C23C16/26
CPC分类号： C23C16/26 , B82Y30/00 , B82Y40/00 , C01B32/186
摘要： Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.
摘要翻译：合成石墨烯薄膜的方法。石墨烯膜可以通过将基板上的金属或电介质加热到400℃和1400℃之间的温度来合成。将金属或电介质暴露于有机化合物，从而从金属或电介质上的有机化合物生长石墨烯。然后将金属或电介质冷却至室温。作为上述方法的结果，独立的石墨烯膜可以合成具有相当于天然石墨剥离的石墨烯的性质，该石墨烯的尺寸远大于在碳化硅，单晶硅衬底或天然石墨上可获得的尺寸。

3. 发明申请

US20100203340A1 PROTECTIVE CARBON COATINGS 审中-公开
标题翻译：保护性碳涂料
公开(公告)号：US20100203340A1
公开(公告)日：2010-08-12
申请号：US12702821
申请日：2010-02-09
申请人： Rodney S. Ruoff , Richard Piner , Xuesong Li , Weiwei Cai
发明人： Rodney S. Ruoff , Richard Piner , Xuesong Li , Weiwei Cai
IPC分类号： B32B15/04 , B05D5/00 , C23C8/64
CPC分类号： C23C8/64 , C01B2204/02 , C01B2204/22 , C01B2204/24 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/36 , C23C30/00 , Y10T428/30
摘要： Disclosed is a method for forming a protective coating comprising contacting a carbon material with a metal surface, heating the carbon material and metal to allow at least a portion of the carbon material to dissolve in the metal, diffuse across a portion of the metal surface, or a combination thereof, and then cooling the metal and carbon material to form a metal having a protecting carbon coating disposed on a surface thereof, wherein the protective coating comprises graphene, multi-layer graphene, or a combination thereof. Also disclosed are a method for inhibiting corrosion comprising forming a layer of graphene on at least a portion of a metal surface; a metal having a surface, wherein at least a portion of the surface comprises a protective carbon coating comprising graphene, multi-layer graphene, or a combination thereof; and a passivation coating comprising a graphene, multi-layer graphene, or a combination thereof.
摘要翻译：公开了一种形成保护涂层的方法，包括使碳材料与金属表面接触，加热碳材料和金属以允许至少一部分碳材料溶解在金属中，扩散穿过金属表面的一部分，或其组合，然后冷却金属和碳材料以形成具有设置在其表面上的保护碳涂层的金属，其中保护涂层包括石墨烯，多层石墨烯或其组合。还公开了一种用于抑制腐蚀的方法，包括在金属表面的至少一部分上形成石墨烯层; 具有表面的金属，其中所述表面的至少一部分包括包含石墨烯，多层石墨烯或其组合的保护性碳涂层; 以及包括石墨烯，多层石墨烯或其组合的钝化涂层。

4. 发明申请

US20190075248A1 APPARATUSES AND METHODS FOR OPTICAL CALIBRATION 审中-公开
公开(公告)号：US20190075248A1
公开(公告)日：2019-03-07
申请号：US15696791
申请日：2017-09-06
申请人： Xuesong Li , Siyi Dai
发明人： Xuesong Li , Siyi Dai
IPC分类号： H04N5/247 , H04N5/225 , G06F17/50
CPC分类号： H04N5/247 , G01N21/93 , G06F17/50 , G06T15/00
摘要： An apparatus for optical calibration includes a calibration target simulating a combustion. The calibration target further includes a first light-emitting pattern and a first light-emitting mechanism effecting the first light-emitting pattern. The apparatus includes two optical cameras aiming at the calibration target, wherein each optical camera has an observation axis and there is an angle between the two observation axes.

5. 发明授权

US10100402B2 Substrate holder for graphene film synthesis 有权
公开(公告)号：US10100402B2
公开(公告)日：2018-10-16
申请号：US13269037
申请日：2011-10-07
申请人： Ageeth A. Bol , Xuesong Li
发明人： Ageeth A. Bol , Xuesong Li
IPC分类号： C23C16/26 , C01B32/186 , C23C16/458 , B82Y30/00 , B82Y40/00
摘要： An apparatus and method for graphene film synthesis. The apparatus includes a quasi enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.

6. 发明授权

US09500652B2 Monoclonal antibody against duck tembusu virus, hybridoma cell line and application thereof 有权
标题翻译：针对鸭头巴病毒的单克隆抗体，杂交瘤细胞系及其应用
公开(公告)号：US09500652B2
公开(公告)日：2016-11-22
申请号：US14378016
申请日：2012-05-16
申请人： Zejun Li , Xuesong Li
发明人： Zejun Li , Xuesong Li
IPC分类号： G01N33/569 , C07K16/10 , G01N33/571
CPC分类号： G01N33/56983 , C07K16/1081 , C07K2317/76 , G01N33/571 , G01N2333/183
摘要： A monoclonal antibody against the Duck Tembusu virus and a hybridoma cell line secreting the monoclonal antibody, a reagent kit and method for detecting a Duck Tembusu virus antibody, and application of the monoclonal antibody in preparing products for diagnosing the Duck Tembusu virus disease. The monoclonal antibody may bind specifically to E protein of Duck Tembusu virus and has an activity of neutralizing Duck Tembusu virus.
摘要翻译：针对鸭Tembusu病毒的单克隆抗体和分泌单克隆抗体的杂交瘤细胞系，用于检测鸭Tembusu病毒抗体的试剂盒和方法，以及单克隆抗体在制备用于诊断鸭Tembusu病毒病的产品中的应用。单克隆抗体可能特异性结合鸭Tembusu病毒的E蛋白，并具有中和鸭Tembusu病毒的活性。

7. 发明申请

US20140272136A1 Chemical Vapor Deposition of Graphene Using a Solid Carbon Source 审中-公开
标题翻译：使用固体碳源的石墨烯化学气相沉积
公开(公告)号：US20140272136A1
公开(公告)日：2014-09-18
申请号：US13845085
申请日：2013-03-18
申请人： Xuesong Li
发明人： Xuesong Li
IPC分类号： C01B31/04
CPC分类号： C01B32/186 , C23C16/26 , C23C16/4488
摘要： Aspects of the invention are directed to a method of forming a film on a substrate. The substrate and a solid carbon source are placed into a reactor. Subsequently, both the substrate and the solid carbon source are heated. Optionally, one or more process gases may be introduced into the reactor to help drive the formation of the film. The film comprises graphene.
摘要翻译：本发明的方面涉及在基材上形成膜的方法。将底物和固体碳源置于反应器中。随后，加热基材和固体碳源。任选地，可以将一种或多种工艺气体引入反应器以帮助驱动膜的形成。该膜包括石墨烯。

8. 发明申请

US20140060726A1 METHODS FOR TRANSFERRING GRAPHENE FILMS AND THE LIKE BETWEEN SUBSTRATES 审中-公开
标题翻译：用于传输石墨膜的方法和基板之间的类似
公开(公告)号：US20140060726A1
公开(公告)日：2014-03-06
申请号：US13603786
申请日：2012-09-05
申请人： Yijing Yin Stehle , Xuesong Li , Yu-Ming Lin , Chun-Yung Sung
发明人： Yijing Yin Stehle , Xuesong Li , Yu-Ming Lin , Chun-Yung Sung
IPC分类号： B32B38/10 , B82Y40/00
CPC分类号： B32B37/26 , B32B2037/268 , B32B2457/00 , B82Y40/00
摘要： Aspects of the invention are directed to a method of forming a thin film adhered to a target substrate. The method comprises the steps of: (i) forming the thin film on a deposition substrate; (ii) depositing a support layer on the thin film; (iii) removing the deposition substrate without substantially removing the thin film and the support layer; (iv) drying the thin film and the support layer while the thin film is only adhered to the support layer; (v) placing the dried thin film and the dried support layer on the target substrate such that the thin film adheres to the target substrate; and (vi) removing the support layer without substantially removing the thin film and the target substrate.
摘要翻译：本发明的方面涉及一种形成粘附到目标基底上的薄膜的方法。该方法包括以下步骤：（i）在沉积衬底上形成薄膜; （ii）在薄膜上沉积支撑层; （iii）除去沉积基板，而基本不除去薄膜和支撑层; （iv）在薄膜仅粘附到支撑层的同时干燥薄膜和支撑层; （v）将干燥的薄膜和干燥的支撑层放置在目标基板上，使得薄膜粘附到目标基板; 和（vi）除去支撑层而基本上不去除薄膜和目标基底。

9. 发明申请

US20130113102A1 SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING A GRAPHENE-BASED BARRIER METAL LAYER 有权
公开(公告)号：US20130113102A1
公开(公告)日：2013-05-09
申请号：US13291470
申请日：2011-11-08
申请人： Junjing Bao , Shaoning Yao , Xuesong Li , Samuel S. S. Choi
发明人： Junjing Bao , Shaoning Yao , Xuesong Li , Samuel S. S. Choi
IPC分类号： H01L23/538 , H01L21/768 , B82Y30/00 , B82Y40/00
CPC分类号： H01L23/4827 , B82Y40/00 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/481 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by utilizing a graphene-based barrier metal layer to block oxygen intrusion from a dielectric layer into the interconnect structure and block copper diffusion from the interconnect structure into the dielectric layer, are disclosed. At least one opening is formed in a dielectric layer. A graphene-based barrier metal layer disposed on the dielectric layer is formed. A seed layer disposed on the graphene-based barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the graphene-based barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.

10. 发明授权

US09045842B2 Electrochemical etching apparatus 有权
标题翻译：电化学蚀刻装置
公开(公告)号：US09045842B2
公开(公告)日：2015-06-02
申请号：US13617727
申请日：2012-09-14
申请人： Shu-Jen Han , Lian Guo , Xuesong Li
发明人： Shu-Jen Han , Lian Guo , Xuesong Li
IPC分类号： C25F7/00 , C25F5/00 , B32B38/10 , C25F3/02 , C01B31/04
CPC分类号： C25F7/00 , B32B38/10 , C01B32/186 , C25F3/02 , C25F5/00
摘要： An electroplating etching apparatus includes a power to output current, and a container configured to contain an electrolyte. A cathode is coupled to the container and configured to fluidly communicate with the electrolyte. An anode is electrically connected to the output, and includes a graphene layer. A metal substrate layer is formed on the graphene layer, and is etched from the graphene layer in response to the current flowing through the anode.
摘要翻译：电镀蚀刻装置包括输出电流的电力，以及容纳电解质的容器。阴极耦合到容器并且构造成与电解液流体连通。阳极电连接到输出端，并且包括石墨烯层。在石墨烯层上形成金属基底层，并响应于流过阳极的电流从石墨烯层中蚀刻出金属基底层。

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