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    • 8. 发明授权
    • Radioactive implantable devices and methods and apparatuses for their production and use
    • 放射性植入装置及其生产和使用的方法和装置
    • US06855103B2
    • 2005-02-15
    • US10217379
    • 2002-08-13
    • Ludger DinkelborgKlaus Urich
    • Ludger DinkelborgKlaus Urich
    • A61B17/00A61F2/00A61K51/00A61K51/12A61M36/04A61N5/10C23G1/08C25D5/10C25D7/00C25D7/04C25D17/12C25F3/00A61N5/00
    • A61K51/1282A61F2210/0095A61N5/1002
    • A radiolabeled implantable device includes a base, a first layer including Cu and a radioactive isotope on the base, and a second layer including Sn on the first layer. Preferably, the base is formed of stainless steel and the radioactive isotope is a radioisotope of Re, such as 188Re or 186Re. Alternately, radioisotopes of the following elements may be used: Be, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Hf, Ta, W, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, At, Th, Pa, U, Np, Pu, Am, Cm, Bk, Cf, Es, Fm, Md, No, Lr. In addition, a process for producing a radiolabeled implantable device includes depositing a first layer including Cu and a radioactive isotope on a base, and depositing a second layer including Sn on the first layer. The process may further include removing Cr2O3 from the base and/or rinsing the base prior to depositing the first layer thereon.
    • 放射性标记的可植入装置包括基底,在基底上包括Cu和放射性同位素的第一层和在第一层上包含Sn的第二层。 优选地,基底由不锈钢形成,并且放射性同位素是Re的放射性同位素,例如<188> Re或<186> Re。 或者,可以使用以下元素的放射性同位素:Be,Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Zn,Ga,Ge,As,Y,Zr,Nb,Mo,Tc,Ru ,Rh,Pd,Ag,Cd,In,Sn,Sb,Te,Hf,Ta,W,Os,Ir,Pt,Au,Hg,Tl,Pb,Bi,Po,At,Th,Pa,U,Np ,Pu,Am,Cm,Bk,Cf,Es,Fm,Md,No,Lr。 此外,生产放射性标记的可植入装置的方法包括在基底上沉积包含Cu和放射性同位素的第一层,并在第一层上沉积包含Sn的第二层。 该方法还可以包括在沉积第一层之前从基底中除去Cr 2 O 3和/或漂洗基底。