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    • 3. 发明申请
    • Termination for Superjunction VDMOSFET
    • 超结VDMOSFET的终止
    • US20130069155A1
    • 2013-03-21
    • US13493505
    • 2012-06-11
    • Yangbo YIHaisong LIQin WANGPing TAOLixin ZHANG
    • Yangbo YIHaisong LIQin WANGPing TAOLixin ZHANG
    • H01L29/78
    • H01L29/7811H01L29/0634H01L29/0653H01L29/0696
    • A termination for silicon superjunction VDMOSFET comprises heavily doped N-type silicon substrate which also works as drain region; drain metal is disposed on the back surface of the heavily doped N-type silicon substrate; an N-type silicon epitaxial layer is disposed on the heavily doped N-type silicon substrate; P-type silicon columns and N-type silicon columns are formed in the N-type silicon epitaxial layer, alternately arranged; a continuous silicon oxide layer is disposed on a part of silicon surface in the termination; structures that block the drift of mobile ions (several discontinuous silicon oxide layers arranged at intervals) are disposed on the other part of silicon surface in the termination. The structures that block the drift of mobile ions disposed in the termination region are able to effectively prevent movement of the mobile ions and improve the capability of the power device against the contamination induced by the mobile ions.
    • 硅超结VDMOSFET的终端包括也用作漏极区的重掺杂N型硅衬底; 漏极金属配置在重掺杂N型硅衬底的背表面上; 在重掺杂的N型硅衬底上设置N型硅外延层; 交替布置在N型硅外延层中形成P型硅柱和N型硅柱; 连续的氧化硅层设置在终端的硅表面的一部分上; 阻止移动离子漂移的结构(间隔布置的几个不连续的氧化硅层)设置在终端的硅表面的另一部分上。 阻止设置在终端区域中的移动离子的漂移的结构能够有效地防止移动离子的移动,并提高功率器件抵抗由移动离子引起的污染的能力。