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1. 发明授权

US07250350B2 Method and structure for integrated stacked capacitor formation 有权
标题翻译：集成堆叠电容器形成的方法和结构
公开(公告)号：US07250350B2
公开(公告)日：2007-07-31
申请号：US10927730
申请日：2004-08-27
申请人： Liu Yong , Cui Yin
发明人： Liu Yong , Cui Yin
IPC分类号： H01L21/20
CPC分类号： H01L28/84 , H01L27/10814 , H01L27/10855 , H01L28/91
摘要： An integrated circuit device structure (and methods). The structure includes a semiconductor substrate comprising a surface. A first doped polysilicon liner is defined within a first trench region formed on a first plug coupled to the surface of the substrate and a second doped polysilicon liner is defined within a second trench region on a second plug coupled to the surface of the substrate. The first trench region is separated from the second trench region by a predetermined dimension. The structure also has a first rugged polysilicon material overlying surfaces of the first doped polysilicon material within the first trench region and a second rugged polysilicon material overlying surfaces of the second doped polysilicon material in the second trench region. The first rugged polysilicon material is free from a possibility of electrical contact with the second rugged polysilicon material. An organic material is disposed completely within the first doped polysilicon liner and disposed completely within the second doped polysilicon liner to protect the first rugged polysilicon material and the second rugged polysilicon material overlying the respective surfaces of the first doped polysilicon liner and the second doped polysilicon liner.
摘要翻译：集成电路器件结构（及方法）。该结构包括包括表面的半导体衬底。第一掺杂多晶硅衬垫限定在形成在耦合到衬底的表面的第一插头上的第一沟槽区域内，并且第二掺杂多晶硅衬垫被限定在耦合到衬底表面的第二插头上的第二沟槽区域内。第一沟槽区域与第二沟槽区域分开预定的尺寸。该结构还具有覆盖在第一沟槽区域内的第一掺杂多晶硅材料表面的第一粗糙多晶硅材料和覆盖第二沟槽区域中的第二掺杂多晶硅材料表面的第二粗糙多晶硅材料。第一个坚固的多晶硅材料没有与第二个坚固的多晶硅材料电接触的可能性。将有机材料完全设置在第一掺杂多晶硅衬垫内并完全设置在第二掺杂多晶硅衬垫内，以保护第一粗糙多晶硅材料和第二粗糙多晶硅材料，其覆盖第一掺杂多晶硅衬垫和第二掺杂多晶硅衬垫的相应表面。

2. 发明授权

US5766614A Burn treatment compositions containing herbal mix 失效
标题翻译：含有草药混合物的烧伤治疗组合物
公开(公告)号：US5766614A
公开(公告)日：1998-06-16
申请号：US821211
申请日：1997-03-20
申请人： Liu Yong
发明人： Liu Yong
IPC分类号： A61K36/708 , A61K36/718 , A61K36/739 , A61K36/748 , A61K36/756 , A61K35/78
CPC分类号： A61K36/708 , A61K36/718 , A61K36/739 , A61K36/748 , A61K36/756 , Y10S424/13 , Y10S514/844 , Y10S514/887 , Y10S514/944 , Y10S514/969
摘要： A new Burn Treatment Composition which provides healing to the skin of people who have received burns or are afflicted with other skin complications that require healing. The inventive device includes effective amounts of Chinese rhubarb; calcium hydroxide; sanguisorba officinalis rhizome; common camphor; coptis chinensis rhizome; phellodendron amurense bark and oldenlandia diffusa roxd.
摘要翻译：一种新的烧伤治疗组合物，其对接受烧伤或患有需要愈合的其它皮肤并发症的人的皮肤提供愈合。本发明装置包括有效量的中国大黄; 氢氧化钙; sanguisorba officinalis根茎; 普通樟脑黄连根茎黄柏树皮和老ia ia

3. 发明申请

US20050287757A1 Method and structure for integrated stacked capacitor formation 有权
标题翻译：集成堆叠电容器形成的方法和结构
公开(公告)号：US20050287757A1
公开(公告)日：2005-12-29
申请号：US10927730
申请日：2004-08-27
申请人： Liu Yong , Cui Yin
发明人： Liu Yong , Cui Yin
IPC分类号： H01L21/02 , H01L21/20 , H01L21/8242 , H01L27/108 , H01L29/00
CPC分类号： H01L28/84 , H01L27/10814 , H01L27/10855 , H01L28/91
摘要： An integrated circuit device structure (and methods). The structure includes a semiconductor substrate comprising a surface. A first doped polysilicon liner is defined within a first trench region formed on a first plug coupled to the surface of the substrate and a second doped polysilicon liner is defined within a second trench region on a second plug coupled to the surface of the substrate. The first trench region is separated from the second trench region by a predetermined dimension. The structure also has a first rugged polysilicon material overlying surfaces of the first doped polysilicon material within the first trench region and a second rugged polysilicon material overlying surfaces of the second doped polysilicon material in the second trench region. The first rugged polysilicon material is free from a possibility of electrical contact with the second rugged polysilicon material. An organic material is disposed completely within the first doped polysilicon liner and disposed completely within the second doped polysilicon liner to protect the first rugged polysilicon material and the second rugged polysilicon material overlying the respective surfaces of the first doped polysilicon liner and the second doped polysilicon liner.
摘要翻译：集成电路器件结构（及方法）。该结构包括包括表面的半导体衬底。第一掺杂多晶硅衬垫限定在形成在耦合到衬底的表面的第一插头上的第一沟槽区域内，并且第二掺杂多晶硅衬垫被限定在耦合到衬底表面的第二插头上的第二沟槽区域内。第一沟槽区域与第二沟槽区域分开预定的尺寸。该结构还具有覆盖在第一沟槽区域内的第一掺杂多晶硅材料表面的第一粗糙多晶硅材料和覆盖第二沟槽区域中的第二掺杂多晶硅材料表面的第二粗糙多晶硅材料。第一个坚固的多晶硅材料没有与第二个坚固的多晶硅材料电接触的可能性。将有机材料完全设置在第一掺杂多晶硅衬垫内并完全设置在第二掺杂多晶硅衬垫内，以保护第一粗糙多晶硅材料和第二粗糙多晶硅材料，其覆盖第一掺杂多晶硅衬垫和第二掺杂多晶硅衬垫的相应表面。

4. 发明授权

US08824431B2 Apparatus for acquiring network information 有权
标题翻译：用于获取网络信息的装置
公开(公告)号：US08824431B2
公开(公告)日：2014-09-02
申请号：US11802156
申请日：2007-05-21
申请人： Liu Yong
发明人： Liu Yong
IPC分类号： H04W4/00 , H04W48/20 , H04W88/04 , H04W88/06
CPC分类号： H04W48/20 , H04W88/04 , H04W88/06 , Y02D70/00
摘要： A network information acquisition apparatus is provided for acquiring network information related to a wireless network. The apparatus being located in a wireless network coverage area, which can receive network information related to a wireless network, from a base station of a wireless network, an access point, and another terminal which has already received network information and is located a short distance away, thereby minimizing a power consumption amount required for receiving network information.
摘要翻译：提供网络信息获取装置，用于获取与无线网络有关的网络信息。该设备位于无线网络覆盖区域中，该无线网络覆盖区域可以从无线网络的基站，接入点和已经接收到网络信息并且位于短距离的另一终端接收与无线网络有关的网络信息从而最小化接收网络信息所需的功耗量。

5. 发明申请

US20100054123A1 METHOD AND DEVICE FOR HIGN UTILIZATION AND EFFICIENT FLOW CONTROL OVER NETWORKS WITH LONG TRANSMISSION LATENCY 审中-公开
标题翻译：用于跨越传输延迟的网络进行移动和有效流量控制的方法和设备
公开(公告)号：US20100054123A1
公开(公告)日：2010-03-04
申请号：US12202226
申请日：2008-08-30
申请人： Liu Yong
发明人： Liu Yong
IPC分类号： H04L12/56
CPC分类号： H04L47/10 , H04L43/0864 , H04L43/0876 , H04L47/193 , H04L47/2441 , H04L47/27 , H04L47/283 , H04L69/161 , H04L69/163 , H04L69/22
摘要： The present invention is to provide a method and device which can determine current available bandwidth for each Transport Control Protocol (TCP) connection and adjust window size dynamically according to the available bandwidth to achieve high network utilization and efficient flow control in the same time without the need to buffer any received TCP packets, which can work with and without support of large window option. The device classifies incoming traffic into several groups (public and private), monitors and allocates the available bandwidth for each group. To enable flow control, the device also records the initial window size value for each connection and compares it with the original window size value for a newly received TCP packet. If the original window size value received from TCP receivers changes, the device varies the modified window size accordingly to enable efficient flow control in the same device as well.
摘要翻译：本发明提供一种可以确定每个传输控制协议（TCP）连接的当前可用带宽并根据可用带宽动态调整窗口大小的方法和装置，以实现高网络利用率和同时有效的流量控制，而不需要需要缓冲任何接收到的TCP数据包，这可以在不支持大窗口选项的情况下工作。该设备将进入的流量分为几个组（公共和私有），监视和分配每个组的可用带宽。为了启用流量控制，设备还记录每个连接的初始窗口大小值，并将其与新接收的TCP数据包的原始窗口大小值进行比较。如果从TCP接收器接收到的原始窗口大小值发生变化，则设备会相应地改变修改的窗口大小，以便在同一设备中实现有效的流量控制。

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