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1. 发明申请

US20100247333A1 Sputter ion pump 有权
公开(公告)号：US20100247333A1
公开(公告)日：2010-09-30
申请号：US11478421
申请日：2006-06-28
申请人： Li Qian , Jie Tang , Liang Liu , Jing Qi , Pi-Jin Chen , Zhao-Fu Hu , Shou-Shan Fan
发明人： Li Qian , Jie Tang , Liang Liu , Jing Qi , Pi-Jin Chen , Zhao-Fu Hu , Shou-Shan Fan
IPC分类号： H01J41/18
CPC分类号： F04B37/02 , F04B37/14 , H01J41/20
摘要： A sputter ion pump includes one vacuum chamber, two parallel anode poles and one cold cathode electron emitter. The vacuum chamber includes at least one aperture located in an outer wall thereof. The two parallel anode poles are positioned in the vacuum chamber and arranged in a symmetrical configuration about a center axis of the vacuum chamber. The cold cathode electron emission device is located on or proximate the outer wall of the vacuum chamber and faces a corresponding aperture. The cold cathode electron emission device is thus configured for injecting electrons through the corresponding aperture and into the vacuum chamber. The sputter ion pump produces a saddle-shaped electrostatic field and is free of a magnetic field. The sputter ion pump has a simplified structure and a low power consumption.

2. 发明授权

US07819633B2 Sputter ion pump 有权
标题翻译：溅射离子泵
公开(公告)号：US07819633B2
公开(公告)日：2010-10-26
申请号：US11478421
申请日：2006-06-28
申请人： Li Qian , Jie Tang , Liang Liu , Jing Qi , Pi-Jin Chen , Zhao-Fu Hu , Shou-Shan Fan
发明人： Li Qian , Jie Tang , Liang Liu , Jing Qi , Pi-Jin Chen , Zhao-Fu Hu , Shou-Shan Fan
IPC分类号： F04B37/02
CPC分类号： F04B37/02 , F04B37/14 , H01J41/20
摘要： A sputter ion pump includes one vacuum chamber, two parallel anode poles and one cold cathode electron emitter. The vacuum chamber includes at least one aperture located in an outer wall thereof. The two parallel anode poles are positioned in the vacuum chamber and arranged in a symmetrical configuration about a center axis of the vacuum chamber. The cold cathode electron emission device is located on or proximate the outer wall of the vacuum chamber and faces a corresponding aperture. The cold cathode electron emission device is thus configured for injecting electrons through the corresponding aperture and into the vacuum chamber. The sputter ion pump produces a saddle-shaped electrostatic field and is free of a magnetic field. The sputter ion pump has a simplified structure and a low power consumption.
摘要翻译：溅射离子泵包括一个真空室，两个平行的阳极和一个冷阴极电子发射器。真空室包括位于其外壁中的至少一个孔。两个平行的阳极极位于真空室中，并以关于真空室的中心轴线的对称构型布置。冷阴极电子发射装置位于真空室的外壁上或靠近真空室的外壁并面对相应的孔。因此，冷阴极电子发射器件被配置用于通过相应的孔注入电子并进入真空室。溅射离子泵产生鞍形静电场并且没有磁场。溅射离子泵具有简化的结构和低功耗。

3. 发明授权

US07442941B2 Ion generator 有权
标题翻译：离子发生器
公开(公告)号：US07442941B2
公开(公告)日：2008-10-28
申请号：US11460610
申请日：2006-07-27
申请人： Li Qian , Jing Qi , Jie Tang , Liang Liu , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人： Li Qian , Jing Qi , Jie Tang , Liang Liu , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： H01J27/02 , H01J37/08 , G21K1/02
CPC分类号： H01J27/04
摘要： An ion generator (10) generally includes: a shielding shell (11), a cathode device (16), and an annular anode (14). The shielding shell has a first end (113), an opposite second end (115) and a main body (111) therebetween. The first end has an electron-input hole (13). The second end has an ion-output hole (15). The main body has a gas inlet (170) for introducing an ionizable gas (170). The cathode device faces the electron-input hole for emitting electrons to enter the shielding shell so as to ionize the ionizable gas thereby generating ions. The cathode device includes a conductive base (160) and at least one field emitter (161) thereon. The annular anode is arranged in the shielding shell. The anode is aligned with the ion-output hole.
摘要翻译：离子发生器（10）通常包括：屏蔽壳（11），阴极装置（16）和环形阳极（14）。屏蔽壳具有第一端（113），相对的第二端（115）和它们之间的主体（111）。第一端具有电子输入孔（13）。第二端具有离子输出孔（15）。主体具有用于引入可电离气体（170）的气体入口（170）。阴极器件面向用于发射电子的电子输入孔进入屏蔽壳，从而电离可电离气体，从而产生离子。阴极器件包括导电基底（160）和至少一个场致发射体（161）。环形阳极布置在屏蔽壳体中。阳极与离子输出孔对准。

4. 发明申请

US20070114475A1 ION GENERATOR 有权
标题翻译：离子发生器
公开(公告)号：US20070114475A1
公开(公告)日：2007-05-24
申请号：US11460610
申请日：2006-07-27
申请人： Li Qian , Jing Qi , Jie Tang , Liang Liu , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人： Li Qian , Jing Qi , Jie Tang , Liang Liu , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： G21F3/00
CPC分类号： H01J27/04
摘要： An ion generator (10) generally includes: a shielding shell (11), a cathode device (16), and an annular anode (14). The shielding shell has a first end (113), an opposite second end (115) and a main body (111) therebetween. The first end has an electron-input hole (13). The second end has an ion-output hole (15). The main body has a gas inlet (170) for introducing an ionizable gas (170). The cathode device faces the electron-input hole for emitting electrons to enter the shielding shell so as to ionize the ionizable gas thereby generating ions. The cathode device includes a conductive base (160) and at least one field emitter (161) thereon. The annular anode is arranged in the shielding shell. The anode is aligned with the ion-output hole.
摘要翻译：离子发生器（10）通常包括：屏蔽壳（11），阴极装置（16）和环形阳极（14）。屏蔽壳具有第一端（113），相对的第二端（115）和它们之间的主体（111）。第一端具有电子输入孔（13）。第二端具有离子输出孔（15）。主体具有用于引入可电离气体（170）的气体入口（170）。阴极器件面向用于发射电子的电子输入孔进入屏蔽壳，从而电离可电离气体，从而产生离子。阴极器件包括导电基底（160）和至少一个场致发射体（161）。环形阳极布置在屏蔽壳体中。阳极与离子输出孔对准。

5. 发明授权

US09355825B2 Ionization vacuum gauge 有权
标题翻译：电离真空计
公开(公告)号：US09355825B2
公开(公告)日：2016-05-31
申请号：US13661011
申请日：2012-10-25
申请人： Peng Liu , Duan-Liang Zhou , Chun-Hai Zhang , Jing Qi , Pi-Jin Chen , Shou-Shan Fan
发明人： Peng Liu , Duan-Liang Zhou , Chun-Hai Zhang , Jing Qi , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： G01L21/34 , B82Y10/00 , B82Y30/00 , H01J41/06
CPC分类号： H01J41/06
摘要： An ionization vacuum gauge includes a cathode, an anode and an ion collector. The ion collector component is located at one side of the anode component and spaced from the anode component. The cathode component is located at another side of the anode component and includes an electron emitter, which extends toward the anode component from the cathode component. The electron emitter includes at least one carbon nanotube wire.
摘要翻译：电离真空计包括阴极，阳极和离子收集器。离子收集器部件位于阳极部件的一侧并与阳极部件间隔开。阴极部件位于阳极部件的另一侧，并且包括从阴极部件向阳极部件延伸的电子发射器。电子发射体包括至少一个碳纳米管线。

6. 发明授权

US07141983B2 Cold cathode device and vacuum gauge using same 有权
标题翻译：冷阴极装置和真空计使用相同
公开(公告)号：US07141983B2
公开(公告)日：2006-11-28
申请号：US11092087
申请日：2005-03-29
申请人： Peng Liu , Lei-Mei Sheng , Yang Wei , Liang Liu , Jing Qi , Shou-Shan Fan
发明人： Peng Liu , Lei-Mei Sheng , Yang Wei , Liang Liu , Jing Qi , Shou-Shan Fan
IPC分类号： G01L21/34
CPC分类号： G01L21/34
摘要： A cold cathode device (20) includes a grid (24), a cold cathode (21) positioned under the grid, and a shield electrode (26) positioned above and parallel to the grid. A vacuum gauge includes a shell (32), a collector (39), an anode (38), and the cold cathode device of the present invention. The cold cathode device and the collector are positioned symmetrically relative to the anode. The collector, the grid and the cold cathode device are received in the shell. The shield electrode can shield an electric field of the grid for preventing from disturbing a symmetrical saddle field in the vacuum gauge. Electrons produced by the cold cathode device can obtain a long electron track because the electron vibration in the saddle field is symmetrical. Thus, the vacuum gauge has an improved sensitivity, and can be widely used to measure pressure in ultra-high and extremely high vacuum conditions.
摘要翻译：冷阴极器件（20）包括栅格（24），位于栅格下方的冷阴极（21）和位于栅格上方并平行于栅极的屏蔽电极（26）。真空计包括壳体（32），收集器（39），阳极（38）和本发明的冷阴极装置。冷阴极器件和集电器相对于阳极对称地定位。收集器，格栅和冷阴极装置被接收在外壳中。屏蔽电极可以屏蔽电网的电场，以防止干扰真空计中的对称鞍场。由冷阴极器件产生的电子可以获得长电子轨迹，因为鞍场中的电子振动是对称的。因此，真空计具有提高的灵敏度，并且可以广泛用于在超高和极高的真空条件下测量压力。

7. 发明申请

US20050237066A1 Cold cathode device and vacuum gauge using same 有权
标题翻译：冷阴极装置和真空计使用相同
公开(公告)号：US20050237066A1
公开(公告)日：2005-10-27
申请号：US11092087
申请日：2005-03-29
申请人： Peng Liu , Lei-Mei Sheng , Yang Wei , Liang Liu , Jing Qi , Shou-Shan Fan
发明人： Peng Liu , Lei-Mei Sheng , Yang Wei , Liang Liu , Jing Qi , Shou-Shan Fan
IPC分类号： G01L21/30 , G01L21/34 , H01J3/02
CPC分类号： G01L21/34
摘要： A cold cathode device (20) includes a grid (24), a cold cathode (21) positioned under the grid, and a shield electrode (26) positioned above and parallel to the grid. A vacuum gauge includes a shell (32), a collector (39), an anode (38), and the cold cathode device of the present invention. The cold cathode device and the collector are positioned symmetrically relative to the anode. The collector, the grid and the cold cathode device are received in the shell. The shield electrode can shield an electric field of the grid for preventing from disturbing a symmetrical saddle field in the vacuum gauge. Electrons produced by the cold cathode device can obtain a long electron track because the electron vibration in the saddle field is symmetrical. Thus, the vacuum gauge has an improved sensitivity, and can be widely used to measure pressure in ultra-high and extremely high vacuum conditions.
摘要翻译：冷阴极器件（20）包括栅格（24），位于栅格下方的冷阴极（21）和位于栅格上方并平行于栅极的屏蔽电极（26）。真空计包括壳体（32），收集器（39），阳极（38）和本发明的冷阴极装置。冷阴极器件和集电器相对于阳极对称地定位。收集器，格栅和冷阴极装置被接收在外壳中。屏蔽电极可以屏蔽电网的电场，以防止干扰真空计中的对称鞍场。由冷阴极器件产生的电子可以获得长电子轨迹，因为鞍场中的电子振动是对称的。因此，真空计具有提高的灵敏度，并且可以广泛用于在超高和极高的真空条件下测量压力。

8. 发明授权

US6072044A Nanoconstructions of geometrical objects and lattices from antiparallel nucleic acid double crossover molecules 失效
标题翻译：来自反平行核酸双交换分子的几何物体和晶格的纳米结构
公开(公告)号：US6072044A
公开(公告)日：2000-06-06
申请号：US827974
申请日：1997-04-25
申请人： Nadrian Seeman , Xiaojun Li , Xiaoping Yang , Jing Qi
发明人： Nadrian Seeman , Xiaojun Li , Xiaoping Yang , Jing Qi
IPC分类号： C07H21/02 , C07H21/04 , C12N15/10 , C07H19/00 , C07H21/00 , C12Q1/68
CPC分类号： C12N15/1031 , C07H21/02 , C07H21/04 , Y10S977/792 , Y10S977/793 , Y10S977/795 , Y10S977/898
摘要： Two and three dimensional polynucleic acid structures, such as periodic lattices, may be constructed from an ordered array of antiparallel double crossover molecules assembled from single stranded oligonucleotides or polynucleotides. These antiparallel double crossover molecules have the structural rigidity necessary to serve as building block components for two and three dimensional structures having the high translational symmetry associated with crystals.
摘要翻译：可以从由单链寡核苷酸或多核苷酸组装的反向平行双交换分子的有序阵列构建二维和三维多核酸结构，例如周期性晶格。这些反平行双交叉分子具有必要的结构刚性，用作具有与晶体相关的高翻译对称性的二维和三维结构的结构单元组分。

9. 外观设计

USD940832S1 Faucet handle 有权
公开(公告)号：USD940832S1
公开(公告)日：2022-01-11
申请号：US29693407
申请日：2019-06-03
申请人： Jing Qi
设计人： Jing Qi

10. 发明授权

US06774497B1 Flip-chip assembly with thin underfill and thick solder mask 有权
标题翻译：倒装芯片组合，底层填料厚，焊接面积较大
公开(公告)号：US06774497B1
公开(公告)日：2004-08-10
申请号：US10402631
申请日：2003-03-28
申请人： Jing Qi , Janice M. Danvir , Tomasz L. Klosowiak , Prasanna Kulkarni , Nadia Yala
发明人： Jing Qi , Janice M. Danvir , Tomasz L. Klosowiak , Prasanna Kulkarni , Nadia Yala
IPC分类号： H01L2348
CPC分类号： H01L21/563 , H01L24/29 , H01L2224/05568 , H01L2224/05573 , H01L2224/13021 , H01L2224/16225 , H01L2224/16237 , H01L2224/274 , H01L2224/29011 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81011 , H01L2224/81191 , H01L2224/83191 , H01L2224/83856 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/0105 , H01L2924/01082 , H01L2924/01322 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/00 , H01L2224/05599
摘要： The invention provides a method for attaching a flip chip to an electrical substrate such as a printed wiring board. A bumped flip chip is provided, the flip chip including an active surface and a plurality of connective bumps extending from the active surface, each connective bump including a side region. A thin layer of an underfill material is applied to the active surface of the flip chip and to a portion of the side regions of the connective bumps. The flip chip is positioned on the electrical substrate, the electrical substrate including a thick layer of a solder mask disposed on the electrical substrate. The flip chip is heated to electrically connect the flip chip to the electrical substrate, wherein the underfill material and the solder mask combine to form a stress-relief layer when the flip chip is electrically connected to the electrical substrate.
摘要翻译：本发明提供了一种将倒装芯片附接到诸如印刷线路板的电气基板的方法。提供了凸起的倒装芯片，该倒装芯片包括有源表面和从活性表面延伸的多个连接凸块，每个连接凸块包括侧面区域。将底层填充材料的薄层施加到倒装芯片的有源表面和连接凸块的一部分侧面区域。倒装芯片位于电气基板上，电气基板包括设置在电气基板上的焊接掩模的厚层。将倒装芯片加热以将倒装芯片电连接到电气基板，其中当倒装芯片电连接到电气基板时，底部填充材料和焊接掩模组合形成应力消除层。

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