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    • 7. 发明公开
    • TFT, METHOD FOR MANUFACTURING OF THE SAME, LIQUID CRYSTAL DISPLAY USING THE SAME AND METHOD FOR MANUFACTURING OF THE SAME
    • TFT,其制造方法,使用其的液晶显示器及其制造方法
    • KR20070119899A
    • 2007-12-21
    • KR20060054441
    • 2006-06-16
    • LG PHILIPS LCD CO LTD
    • CHA SEUNG HWANCHAE GEE SUNGLEE BO HYUN
    • G02F1/136
    • G02F1/136286G02F2001/136231H01L27/124H01L29/786
    • A thin film transistor, a fabrication method thereof, an LCD using the same, and a fabrication method thereof are provided to improve mobility of carriers and remove a need for an additional process for crystallization by using a nanowire for a semiconductor layer. A gate electrode(111) is formed on a predetermined portion on a substrate(110). A gate dielectric layer(112) is formed on the entire substrate including the gate electrode. A semiconductor layer(120) is formed on the gate electrode on the gate dielectric layer, and is formed of a nano material. A fixing plate(121) is formed at a central portion on the semiconductor layer. A source electrode(130) and a drain electrode(131) are formed at a predetermined interval at both sides of the semiconductor layer. The nano material is one of a nanowire, a nanocable, and a nanotube.
    • 提供薄膜晶体管,其制造方法,使用该薄膜晶体管的制造方法及其制造方法,以提高载流子的迁移率,并且通过使用半导体层的纳米线来消除对结晶的附加工艺的需要。 栅电极(111)形成在基板(110)上的预定部分上。 在包括栅电极的整个基板上形成栅介质层(112)。 半导体层(120)形成在栅极电介质层上的栅电极上,并由纳米材料形成。 在半导体层的中央部形成有固定板(121)。 在半导体层的两侧以预定的间隔形成源电极(130)和漏电极(131)。 纳米材料是纳米线,纳米线和纳米管之一。