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1. 发明专利

JP2006114501A Light-emitting element package and backlight unit for liquid crystal display using the same 审中-公开
标题翻译：用于液晶显示器的发光元件包装和背光单元
公开(公告)号：JP2006114501A
公开(公告)日：2006-04-27
申请号：JP2005299024
申请日：2005-10-13
申请人： Lg Electronics Inc , エルジーエレクトロニクスインコーポレイテッド
发明人： LEE SEUNG MIN , CHO SHUNGO , LEE TAE HEE
IPC分类号： F21V29/00 , F21S2/00 , F21V29/02 , F21Y101/02 , G02F1/13357 , H01L33/44 , H01L33/62 , H01L33/64
CPC分类号： F21V29/02 , F21V29/67 , F21V29/74 , F21V29/763 , F21Y2115/10 , G02F1/133603 , G02F2001/133628
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element package and a backlight unit for a liquid crystal display using the same. SOLUTION: The package is composed of a metal substrate, an insulating film formed on the substrate, a plurality of electrode lines formed on an upper part of the insulating film, light-emitting elements electrically bonded on an upper part of the electrode lines aligned in rows and columns, striped protruded parts separated from each other with one face fixed to a lower part of the substrate, a guide member fixed to the other face of the protruded parts, and a fan case with a fan built in for sucking in air through a suction opening mounted on a side face of the substrate and the guide member. With this, by compulsorily cooling the light-emitting element package and the backlight unit for the liquid crystal display by the fan, and by heightening heat radiation efficiency, degradation of elements can be prevented. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于使用其的液晶显示器的发光元件封装和背光单元。解决方案：封装由金属基板，形成在基板上的绝缘膜，形成在绝缘膜的上部的多个电极线组成，电连接在电极的上部的发光元件以行和列排列的线条，条纹突出部分彼此分离，一个面固定到基板的下部，固定到突出部分的另一个表面的引导部件，以及用于吸入的风扇的风扇壳体通过安装在基板的侧面和引导构件的吸入口的空气中。由此，通过风扇强制冷却发光元件封装和用于液晶显示器的背光单元，并且通过提高散热效率，可以防止元件的劣化。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2013062552A Light-emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2013062552A
公开(公告)日：2013-04-04
申请号：JP2013001743
申请日：2013-01-09
申请人： Lg Electronics Inc , エルジーエレクトロニクスインコーポレイティド , Lg Innotek Co Ltd , エルジーイノテックカンパニーリミテッド
发明人： CHO HYUN KYONG , KIM SUN KYUNG , CHO SHUNGO
IPC分类号： H01L33/16 , H01L33/36 , H01L33/22 , H01L33/32
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device used with an optical crystal structure and having optimum light extraction efficiency, which can improve light extraction efficiency while retaining electrical characteristics in introduction of a light extraction structure into the light-emitting device.SOLUTION: The light-emitting device comprises: a reflecting electrode; a semiconductor layer located on the reflecting electrode and comprising a luminous layer; and an optical crystal formed on the semiconductor layer. The distance between the centers of the reflecting electrode and the luminous layer is between (odd number)×λ/4n-α and (odd number)×λ/4n+α, where λ is the wavelength of light emitted from the luminous layer, n is the refractive index of the semiconductor layer, and α is 0.10λ/n.
摘要翻译：要解决的问题：提供一种与光学晶体结构一起使用且具有最佳光提取效率的发光装置，其可以在将光提取结构引入发光的同时保持电特性的同时提高光提取效率设备。解决方案：发光装置包括：反射电极; 位于所述反射电极上并包含发光层的半导体层; 以及形成在半导体层上的光学晶体。反射电极和发光层的中心之间的距离在（奇数）×λ/ 4n-α和（奇数）×λ/ 4n +α之间，其中λ是从发光层发射的光的波长， n为半导体层的折射率，α为0.10λ/ n。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2007305998A Light emitting device and fabrication method thereof 有权
标题翻译：发光装置及其制造方法
公开(公告)号：JP2007305998A
公开(公告)日：2007-11-22
申请号：JP2007123894
申请日：2007-05-08
申请人： Lg Electronics Inc , Lg Innotek Co Ltd , エルジーイノテックカンパニーリミテッド , エルジーエレクトロニクスインコーポレイティド
发明人： CHO HYUN KYONG , KIM SUN KYUNG , CHO SHUNGO
IPC分类号： H01L33/16 , H01S5/323 , H01L33/22 , H01L33/32
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device with an optimum optical extraction efficiency capable of improving the optical extraction efficiency while maintaining electrical properties in the introduction of an optical extraction structure to the light emitting device, which is used together with an optical crystal structure, and a fabrication method thereof. SOLUTION: The light emitting device consists of a semiconductor layer and a light extraction layer that is formed of material with a refractive index equal to or greater than that of the semiconductor layer and is located on the semiconductor layer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有最佳光提取效率的发光器件，其能够提高光提取效率，同时在向光发射器件引入光提取结构的同时保持电性能，其与光学晶体结构及其制造方法。解决方案：发光器件由半导体层和光提取层组成，其由折射率等于或大于半导体层的折射率的材料形成，并且位于半导体层上。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007227939A Light emitting element, and its manufacturing method 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：JP2007227939A
公开(公告)日：2007-09-06
申请号：JP2007045407
申请日：2007-02-26
申请人： Lg Electronics Inc , Lg Innotek Co Ltd , エルジーイノテックカンパニーリミテッド , エルジーエレクトロニクスインコーポレイティド
发明人： KIN SHOKYOKU , CHO HYUN KYONG , CHO SHUNGO
IPC分类号： H01L33/12 , H01L33/32
CPC分类号： H01L33/08 , H01L33/20
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element which enables light generated from an active layer to be emitted outside before it is absorbed and scattered inside the element and is reduced to a prescribed intensity or less by forming at least one mutually isolated groove by etching from a transparent electrode (or an ohmic layer) to a part of an n-type semiconductor layer, and can improve light extraction efficiency, and to provide its manufacturing method. SOLUTION: The light emitting element is constituted by comprising a nitride semiconductor layer which is constituted of a first semiconductor layer (n-type nitride semiconductor layer) 120, an active layer 130 and a second semiconductor layer (p-type nitride semiconductor layer) 140 laminated one by one, and wherein a part of the first semiconductor layer 120 is exposed by carrying out mesa-etching from the second semiconductor layer 140 to a part of the first semiconductor layer 120, and at least one groove 180 which is formed passing through a part of the first semiconductor layer 120, the active layer 130 and the second semiconductor layer 140. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种发光元件，其使得能够在有源层产生的光在被吸收并散射在元件内之前被发射到外部，并且通过形成至少一个相互作用而被减小到规定的强度或更小通过从透明电极（或欧姆层）蚀刻到n型半导体层的一部分来隔离凹槽，并且可以提高光提取效率，并提供其制造方法。解决方案：发光元件由包括由第一半导体层（n型氮化物半导体层）120，有源层130和第二半导体层（p型氮化物半导体）构成的氮化物半导体层构成层）140，并且其中通过从第二半导体层140到第一半导体层120的一部分进行台面蚀刻来暴露第一半导体层120的一部分，以及至少一个凹槽180 形成穿过第一半导体层120，有源层130和第二半导体层140的一部分。版权所有：（C）2007，JPO＆INPIT

5. 发明专利

JP2007221146A Vertical light emitting device and its manufacturing method 审中-公开
标题翻译：垂直发光装置及其制造方法
公开(公告)号：JP2007221146A
公开(公告)日：2007-08-30
申请号：JP2007036624
申请日：2007-02-16
申请人： Lg Electronics Inc , Lg Innotek Co Ltd , エルジーイノテックカンパニーリミテッドLG Innotek Co., Ltd , エルジーエレクトロニクスインコーポレイティド
发明人： CHO SHUNGO , HA JUN SEOK
IPC分类号： H01L33/04 , H01L33/10 , H01L33/14 , H01L33/32 , H01L33/42
CPC分类号： H01L33/42 , H01L33/0079
摘要： PROBLEM TO BE SOLVED: To provide a vertical light emitting element for increasing light emitting efficiency and light extraction efficiency and its manufacturing method. SOLUTION: The element is constituted by comprising a semiconductor layer 20 having a first surface and a second surface facing each other and generating light by energization, a first electrode 30 provided on the first surface of the semiconductor layer 20, a TCO layer 50 adhered onto the second surface of the semiconductor layer 20, and a second electrode 60 provided on the TCO layer 50. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高发光效率和光提取效率的垂直发光元件及其制造方法。解决方案：元件由包括具有第一表面和第二表面的半导体层20构成并且通过激励产生光，第一电极30设置在半导体层20的第一表面上，TCO层 50附着在半导体层20的第二表面上，第二电极60设置在TCO层50上。（C）2007，JPO＆INPIT

6. 发明专利

JP2007096318A Light emitting element package and backlight unit using the same 审中-公开
标题翻译：发光元件包和背光单元
公开(公告)号：JP2007096318A
公开(公告)日：2007-04-12
申请号：JP2006261782
申请日：2006-09-27
申请人： Lg Electronics Inc , Lg Innotek Co Ltd , エルジーイノテックカンパニーリミテッド , エルジーエレクトロニクスインコーポレイティド
发明人： SEO JUNG HOON , CHO SHUNGO
IPC分类号： H01L33/54 , F21S2/00 , F21V5/04 , F21Y101/02 , G02B3/00 , G02F1/13357 , H01L33/62 , H01L33/64
CPC分类号： G02F1/133606 , F21K9/60 , F21V5/007 , F21V5/048 , F21V13/02 , F21Y2105/10 , F21Y2115/10 , G02F1/133603 , G02F1/133611 , G02F2001/133607 , H01L33/54 , H01L33/56 , H01L33/58 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element package and a backlight unit using the same. SOLUTION: The present invention comprises: a package body mounted with a light emitting element; and an optical lens comprising a refracting surface capable of refracting the light emitted from the package body and emitting it outside, having a recessed groove formed at the upper part and bonded to the upper part of the package body. Thereby, the light moving to the upper part of the light emitting element package is refracted by the lens, and can be emitted to the upper part as the light having uniform intensity. Thus, a wide area can be uniformly illuminated with a small number of light emitting elements, so efficiency and power consumption can be improved. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种发光元件封装和使用其的背光单元。解决方案：本发明包括：安装有发光元件的封装体; 以及光学透镜，包括折射表面，该折射表面能够折射从封装体发射的光并将其发射到外部，具有形成在上部并且结合到封装体的上部的凹槽。因此，移动到发光元件封装的上部的光被透镜折射，并且可以作为具有均匀强度的光而发射到上部。因此，可以用少量的发光元件均匀地照射广泛的面积，因此可以提高效率和功率消耗。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2013034010A Vertical light-emitting device 审中-公开
标题翻译：垂直发光装置
公开(公告)号：JP2013034010A
公开(公告)日：2013-02-14
申请号：JP2012243706
申请日：2012-11-05
申请人： Lg Electronics Inc , エルジーエレクトロニクスインコーポレイティド , Lg Innotek Co Ltd , エルジーイノテックカンパニーリミテッド
发明人： CHO SHUNGO , HA JUN SEOK
IPC分类号： H01L33/42 , H01L33/04 , H01L33/10 , H01L33/14 , H01L33/32
CPC分类号： H01L33/42 , H01L33/0079
摘要： PROBLEM TO BE SOLVED: To increase in luminous efficiency and light extraction efficiency.SOLUTION: A vertical light-emitting device includes a supporting layer 400, a first electrode 300 disposed on the supporting layer 400, a semiconductor structure 200 disposed on the first electrode 300 and having inclined side surfaces, a transparent conductive oxide layer 600 disposed above the semiconductor structure 200, and a second electrode 700 provided in a portion of the transparent conductive oxide layer 600. A nitrogen getter metal layer 500, which has reactive property with nitrogen in the semiconductor structure 200 and serves as an ohmic contact on the semiconductor structure 200, is interposed between the semiconductor structure 200 and the transparent conductive oxide layer 600.
摘要翻译：要解决的问题：提高发光效率和光提取效率。解决方案：垂直发光器件包括支撑层400，设置在支撑层400上的第一电极300，设置在第一电极300上并具有倾斜侧表面的半导体结构200，透明导电氧化物层600 设置在半导体结构200上方的第二电极700和设置在透明导电氧化物层600的一部分中的第二电极700.氮吸气剂金属层500，其与半导体结构200中的氮具有反应性，并且作为欧姆接触半导体结构200插入在半导体结构200和透明导电氧化物层600之间。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012212896A Vertical light-emitting device 有权
标题翻译：垂直发光装置
公开(公告)号：JP2012212896A
公开(公告)日：2012-11-01
申请号：JP2012127702
申请日：2012-06-05
申请人： Lg Electronics Inc , Lg Innotek Co Ltd , エルジーイノテックカンパニーリミテッド , エルジーエレクトロニクスインコーポレイティド
发明人： CHO SHUNGO , MOON YONG TAE
IPC分类号： H01L33/10 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42
CPC分类号： H01L33/20 , H01L2933/0083
摘要： PROBLEM TO BE SOLVED: To provide a vertical light-emitting device that can improve light extraction efficiency and to provide a method of manufacturing the same.SOLUTION: A vertical light-emitting device comprises: a support layer 70; a first electrode that is located on the support layer; a plurality of semiconductor layers that are located on the first electrode and include a p-type GaN layer 43 located on the first electrode, a light-emitting layer 42 located on the p-type GaN layer, and an n-type GaN layer 41 located on the light-emitting layer; an optical crystal layer that is located on the n-type GaN layer and is formed by a plurality of holes periodically arranged; and a second electrode that is located on the optical crystal layer.
摘要翻译：要解决的问题：提供一种可以提高光提取效率并提供其制造方法的垂直发光装置。解决方案：垂直发光装置包括：支撑层70; 位于所述支撑层上的第一电极; 位于第一电极上并且包括位于第一电极上的p型GaN层43，位于p型GaN层上的发光层42和n型GaN层41的多个半导体层位于发光层上; 位于n型GaN层上并由周期性排列的多个孔形成的光学晶体层; 以及位于光学晶体层上的第二电极。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2007258700A Perpendicular type light emitting element and method for manufacturing the same 有权
标题翻译：普适型发光元件及其制造方法
公开(公告)号：JP2007258700A
公开(公告)日：2007-10-04
申请号：JP2007054043
申请日：2007-03-05
申请人： Lg Electronics Inc , Lg Innotek Co Ltd , エルジーイノテックカンパニーリミテッド , エルジーエレクトロニクスインコーポレイティド
发明人： CHO SHUNGO , MOON YONG TAE
IPC分类号： H01L33/32 , H01L33/42
CPC分类号： H01L33/20 , H01L2933/0083
摘要： PROBLEM TO BE SOLVED: To provide a perpendicular type light emitting element and a method for manufacturing the same capable of improving the light extraction efficiency.
SOLUTION: The system is configured by including a step that forms a light extraction layer on a substrate, a step that forms a plurality of semiconductor layers on the light extraction layer, a step that forms a first electrode on a plurality of the semiconductor layers, a step that forms a support layer on the first electrode, a step that removes the substrate, and a step that forms a second electrode on the surface from which the substrate is removed.
COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JPH1174609A LASER DIODE AND FABRICATION THEREOF 失效
公开(公告)号：JPH1174609A
公开(公告)日：1999-03-16
申请号：JP18776598
申请日：1998-07-02
申请人： LG ELECTRONICS INC
发明人： CHO SHUNGO , SUNG KANG-HYON
IPC分类号： H01S5/00 , H01L33/00 , H01S5/10 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/30 , H01S5/323 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To enhance the optical characteristics and the current characteristics of a ridge structure employing wet etching or reactive ion etching by forming a second conductivity type InGaP layer having a constant width being the same as that of a second conductivity type second clad layer and a vertical side face in a specified region on an etch stop layer. SOLUTION: An n-type buffer layer, an n-type clad layer, an active layer, a p-type primary clad layer, a p-type InGaP etch stop layer 16, a p-type secondary clad layer 17, a p-type InGaP layer 18, and a p-type GaAs layer 19 are grown sequentially on an n-type substrate. Subsequently, a stripe type and a taper type ridge structure are formed. Residual thickness (t) of the p-type secondary clad layer 17 on the p-type InGaP etch stop layer 16 is then adjusted and the remaining p-type secondary clad layer 17 having thickness (t) is removed by wet etching. Thereafter, the remaining photoresist and insulation film are removed to obtain a ridge pattern keeping a substantially vertical structure. Finally, a current cut-off layer and a current conduction layer are formed sequentially on the entire surface including the ridge.

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