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    • 1. 发明授权
    • Gate level reconfigurable magnetic logic
    • 门级可重构磁逻辑
    • US08295082B2
    • 2012-10-23
    • US12192386
    • 2008-08-15
    • Lew G. Chua-EoanXiaochun ZhuZhi Zhu
    • Lew G. Chua-EoanXiaochun ZhuZhi Zhu
    • G11C11/14H03K19/177
    • G11C11/16
    • A re-programmable gate logic includes a plurality of non-volatile re-configurable resistance state-based memory circuits in parallel, wherein the circuits are re-configurable to implement or change a selected gate logic, and the plurality of non-volatile re-configurable resistance state-based memory circuits are each adapted to receive a logical input signal. An evaluation switch in series with the plurality of parallel non-volatile re-configurable resistance state-based memory circuits is configured to provide an output signal based on the programmed states of the memory circuits. A sensor is configured to receive the output signal and provide a logical output signal on the basis of the output signal and a reference signal provided to the sensor. The reconfigurable logic may be implemented based on using spin torque transfer (STT) magnetic tunnel junction (MTJ) magnetoresistance random access memory (MRAM) as the re-programmable memory elements. The logic configuration is retained without power.
    • 可再编程门逻辑并行包括多个非易失性可重新配置的基于电阻状态的存储器电路,其中电路可重新配置以实现或改变所选择的门逻辑, 可配置电阻状态的存储器电路各自适于接收逻辑输入信号。 与多个并行非易失性可重配置电阻状态存储电路串联的评估开关被配置为基于存储器电路的编程状态提供输出信号。 传感器被配置为接收输出信号并且基于输出信号和提供给传感器的参考信号来提供逻辑输出信号。 可重构逻辑可以基于使用自旋转矩传递(STT)磁性隧道结(MTJ)磁阻随机存取存储器(MRAM)作为可再编程存储器元件来实现。 逻辑配置在没有电源的情况下保留。
    • 2. 发明申请
    • Gate Level Reconfigurable Magnetic Logic
    • 门级可重构磁逻辑
    • US20100039136A1
    • 2010-02-18
    • US12192386
    • 2008-08-15
    • Lew G. Chua-EoanXiaochun ZhuZhi Zhu
    • Lew G. Chua-EoanXiaochun ZhuZhi Zhu
    • H03K19/173
    • G11C11/16
    • A re-programmable gate logic includes a plurality of non-volatile re-configurable resistance state-based memory circuits in parallel, wherein the circuits are re-configurable to implement or change a selected gate logic, and the plurality of non-volatile re-configurable resistance state-based memory circuits are each adapted to receive a logical input signal. An evaluation switch in series with the plurality of parallel non-volatile re-configurable resistance state-based memory circuits is configured to provide an output signal based on the programmed states of the memory circuits. A sensor is configured to receive the output signal and provide a logical output signal on the basis of the output signal and a reference signal provided to the sensor. The reconfigurable logic may be implemented based on using spin torque transfer (STT) magnetic tunnel junction (MTJ) magnetoresistance random access memory (MRAM) as the re-programmable memory elements. The logic configuration is retained without power.
    • 可再编程门逻辑并行包括多个非易失性可重新配置的基于电阻状态的存储器电路,其中电路可重新配置以实现或改变所选择的门逻辑, 可配置电阻状态的存储器电路各自适于接收逻辑输入信号。 与多个并行非易失性可重配置电阻状态存储电路串联的评估开关被配置为基于存储器电路的编程状态提供输出信号。 传感器被配置为接收输出信号并且基于输出信号和提供给传感器的参考信号来提供逻辑输出信号。 可重构逻辑可以基于使用自旋转矩传递(STT)磁性隧道结(MTJ)磁阻随机存取存储器(MRAM)作为可再编程存储器元件来实现。 逻辑配置在没有电源的情况下保留。