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1. 发明授权

US4285001A Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material 失效
标题翻译：使用多晶半导体材料的单片分布式电阻电容器件和电路
公开(公告)号：US4285001A
公开(公告)日：1981-08-18
申请号：US972738
申请日：1978-12-26
申请人： Levy Gerzberg , James D. Meindl
发明人： Levy Gerzberg , James D. Meindl
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L27/07 , H01L29/94 , H01L27/13
CPC分类号： H01L28/20 , H01L27/0755 , H01L27/0794 , H01L29/94
摘要： A distributed resistor-capacitor device which is highly reproducible with near ideal electrical characteristics including a substrate, an insulating layer on a major surface of the substrate, and a polycrystalline semiconductor material on the insulating layer. The polycrystalline layer is the resistor and cooperates with the substrate as the capacitor. Fabrication of the device is compatible with integrated circuit fabrication and can be used with field-effect and bipolar junction transistors.
摘要翻译：一种分布式电阻器电容器，其具有包括基板，基板主表面上的绝缘层和绝缘层上的多晶半导体材料的近似理想电特性的高度可再现性。多晶层是电阻器，并与基片作为电容器配合使用。该器件的制造与集成电路制造兼容，可用于场效应和双极结型晶体管。

2. 发明授权

US4431936A Transducer structure for generating uniform and focused ultrasonic beams and applications thereof 失效
标题翻译：用于产生均匀和聚焦的超声波束的传感器结构及其应用
公开(公告)号：US4431936A
公开(公告)日：1984-02-14
申请号：US350020
申请日：1982-02-18
申请人： Chong-Cheng Fu , Levy Gerzberg
发明人： Chong-Cheng Fu , Levy Gerzberg
IPC分类号： A61B5/026 , G01F1/66 , G01P5/24 , G10K11/26 , G10K11/34 , H01L41/04
CPC分类号： G01F1/662 , G01P5/24 , G10K11/26 , G10K11/348 , G01N2291/02836
摘要： Transducer structures for use in volume flow measurements which generate a first uniform beam and a second focused beam within the uniform beam. The transducer may include concentric elements, a linear array, or combinations thereof. In a two element concentric array, a central disc generates a uniform beam and a peripheral annular element having a lens thereon defines a second focused beam within the first beam. In a linear array, a plurality of juxtaposed linear elements define a scan surface, and a segmented element within the linear element array defines a focused reference sample volume within the scanned surface. A concentric array having a plurality of annular elements is driven with amplitude weighting of each element, in accordance with a Fourier-Bessel approximation to the desired beam pattern, thereby electronically achieving ultrasonic beam width control.

3. 发明授权

US5070383A Programmable memory matrix employing voltage-variable resistors 失效
标题翻译：采用电压可变电阻的可编程存储矩阵
公开(公告)号：US5070383A
公开(公告)日：1991-12-03
申请号：US295274
申请日：1989-01-10
申请人： Alexander B. Sinar , Levy Gerzberg , Yosef Y. Shacham , Ilan A. Blech , Eric R. Sirkin
发明人： Alexander B. Sinar , Levy Gerzberg , Yosef Y. Shacham , Ilan A. Blech , Eric R. Sirkin
IPC分类号： H01L23/525 , H01L27/102
CPC分类号： H01L27/1021 , H01L23/5252 , H01L2924/0002 , Y10S257/91 , Y10S257/926
摘要： A memory matrix comprises a plurality of word lines, a plurality of bit lines, and a stacked diode and voltage-variable resistor structure interconnecting bit lines to word lines. The stacked diode and voltage-variable resistor structure includes a doped region in a semiconductor substrate defining a work line, a doped polycrystalline silicon layer over said word line and forming a p-n junction therewith, and an amorphized region in the doped polycrystalline silicon layer having increased resistance over the non-amorphized portion of the doped polycrystalline silicon layer. A contact is made to the amorphized polycrystalline silicon material which preferably includes a titanium-tungsten barrier layer and an aluminum layer over the barrier layer. To improve the breakdown voltage of the diode structure, a region of opposite conductivity type is formed in the word line under the doped polycrystalline silicon layer either by out-diffusion of dopants from the polycrystalline silicon layer or by the implantation of dopant ions through the polycrystalline silicon layer into the word line.
摘要翻译：存储矩阵包括多个字线，多个位线以及将位线互连到字线的堆叠二极管和电压可变电阻器结构。层叠二极管和可变电压结构包括在限定工作线的半导体衬底中的掺杂区域，在所述字线上方形成掺杂多晶硅层并与其形成pn结，掺杂多晶硅层中的非晶化区域具有增加的掺杂多晶硅层非非晶化部分的电阻。对非晶化多晶硅材料进行接触，其优选在阻挡层上包括钛 - 钨阻挡层和铝层。为了提高二极管结构的击穿电压，在掺杂多晶硅层下面的字线中形成相反导电类型的区域，通过掺杂剂从多晶硅层的扩散或通过掺杂剂离子注入多晶硅硅层进入字线。

4. 发明授权

US4590589A Electrically programmable read only memory 失效
标题翻译：电可编程只读存储器
公开(公告)号：US4590589A
公开(公告)日：1986-05-20
申请号：US451821
申请日：1982-12-21
申请人： Levy Gerzberg
发明人： Levy Gerzberg
IPC分类号： G11C17/16 , H01L23/525 , H01L27/24 , G11C17/00
CPC分类号： G11C17/16 , H01L23/5252 , H01L27/24 , H01L2924/0002
摘要： A programmable read only memory (PROM) includes voltage programmable structures which are readily fabricated to provide predictable and selectable programming voltages. The resistor structure includes a body of semiconductor material having high electrical conductance and a surface contact region having a crystalline structure characterized by relatively high electrical resistance. The relatively high electrical resistance can be established by amorphotizing the surface region or by forming lattice defects in the crystalline structure such as by ion implantation. In programming the PROM, a sufficient voltage is applied across, or sufficient current is applied through, selected structures whereby the surface regions thereof are heated sufficiently to reduce the relatively high electrical resistance.
摘要翻译：可编程只读存储器（PROM）包括易于制造以提供可预测和可选择的编程电压的电压可编程结构。电阻器结构包括具有高导电性的半导体材料体和具有以较高电阻为特征的晶体结构的表面接触区域。可以通过使表面区域放大或通过在晶体结构中形成晶格缺陷，例如通过离子注入来建立相对较高的电阻。在对PROM进行编程时，在所选择的结构中施加足够的电压，或者通过所选择的结构施加足够的电流，由此其表面区域被充分加热以减小相对高的电阻。

5. 发明授权

US4519260A Ultrasonic transducers and applications thereof 失效
标题翻译：超声波换能器及其应用
公开(公告)号：US4519260A
公开(公告)日：1985-05-28
申请号：US574065
申请日：1984-01-26
申请人： Chong-Cheng Fu , Levy Gerzberg
发明人： Chong-Cheng Fu , Levy Gerzberg
IPC分类号： G01F1/66 , G01P5/24 , G10K11/26 , G10K11/34
CPC分类号： G10K11/348 , G01F1/662 , G01P5/24 , G10K11/26
摘要： Transducer structures for use in volume flow measurements which generate a first uniform beam and a second focused beam within the uniform beam. The transducer may include concentric elements, a linear array, or combinations thereof. In a two element concentric array, a central disc generates a uniform beam and a peripheral annular element having a lens thereon defines a second focused beam within the first beam. In a linear array a plurality of juxtaposed linear elements define a scan surface and a segmented element within the linear element array defines a focused reference sample volume within the scanned surface. A concentric array having a plurality of annular elements is driven with amplitude weighting of each element in accordance with a Fourier-Bessel approximation to the desired beam pattern thereby electronically achieving ultrasonic beam width control.
摘要翻译：用于体积流量测量的传感器结构，其在均匀波束内产生第一均匀波束和第二聚焦光束。换能器可以包括同心元件，线性阵列或其组合。在两元件同心圆盘阵列中，中心盘产生均匀的光束，并且具有透镜的外围环形元件在第一光束内限定第二聚焦光束。在线性阵列中，多个并置的线性元件限定了扫描表面，线性元件阵列内的分段元件限定了扫描表面内的聚焦参考样本体积。具有多个环形元件的同心圆盘阵列根据对期望的波束图案的傅立叶 - 贝塞尔近似来驱动每个元件的振幅加权，从而电子地实现超声波束宽度控制。

6. 发明授权

US4233671A Read only memory and integrated circuit and method of programming by laser means 失效
标题翻译：只读存储器和集成电路以及通过激光手段编程的方法
公开(公告)号：US4233671A
公开(公告)日：1980-11-11
申请号：US1360
申请日：1979-01-05
申请人： Levy Gerzberg , Arnon Gat , Roger Melen , James F. Gibbons
发明人： Levy Gerzberg , Arnon Gat , Roger Melen , James F. Gibbons
IPC分类号： G11C17/06 , G11C17/08 , G11C17/14 , H01L21/268 , H01L21/8229 , H01L27/06 , H01L27/102 , H01L29/86
CPC分类号： H01L27/0688 , G11C17/08 , G11C17/14 , H01L21/268
摘要： A programmable read only memory (PROM) includes a first plurality of conductive lines, a second plurality of conductive lines and polycrystalline silicon material therebetween. At the crossing points of the first and second plurality of lines doped regions are provided in the polycrystalline silicon in contact with a second line and which extend at least partially through the material. To provide a diode interconnect at any crossing point, the associated region is irradiated by a laser beam to either cause diffusion of dopant atoms to the underlaying conductive line or activate implanted ions, thereby electrically interconnecting the first and second lines through a diode. The PROM is readily fabricated as part of a monolithic integrated circuit or electrical array and can be programmed after completion of the fabrication process.
摘要翻译：可编程只读存储器（PROM）包括第一多个导电线，第二多个导电线和它们之间的多晶硅材料。在第一和第二多行线路掺杂区域的交叉点设置在与第二线路接触的多晶硅中，并且至少部分延伸通过该材料。为了在任何交叉点提供二极管互连，相关联的区域被激光束照射以使掺杂剂原子扩散到底层导电线或激活注入离子，从而通过二极管电连接第一和第二线。 PROM易于制造为单片集成电路或电气阵列的一部分，并且可以在完成制造过程之后进行编程。

7. 发明授权

US4214918A Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam 失效
标题翻译：通过施加辐射束形成多晶半导体互连，电阻和触点的方法
公开(公告)号：US4214918A
公开(公告)日：1980-07-29
申请号：US950828
申请日：1978-10-12
申请人： Arnon Gat , Levy Gerzberg , James F. Gibbons
发明人： Arnon Gat , Levy Gerzberg , James F. Gibbons
IPC分类号： H01L21/268 , H01L21/321 , H01L21/263
CPC分类号： H01L21/321 , H01L21/268 , Y10S148/093
摘要： Low resistance, doped polycrystalline semiconductor connection patterns are fabricated by scanning a doped polycrystalline layer with a laser beam thereby increasing the crystal grain size, reducing defects in the grains, increasing charge carrier mobility and as a result reducing material resistivity. Semiconductor devices having increased circuit density and speed are realized through use of laser annealed polycrystalline semiconductor resistors, contacts and interconnections.
摘要翻译：通过用激光束扫描掺杂多晶层来制造低电阻，掺杂多晶半导体连接图案，从而增加晶粒尺寸，减少晶粒中的缺陷，增加电荷载流子迁移率，并因此降低材料电阻率。具有增加的电路密度和速度的半导体器件通过使用激光退火的多晶半导体电阻器，触点和互连来实现。

8. 发明申请

US20060270452A1 Remote storage of pictures and other data through a mobile telephone network 审中-公开
标题翻译：通过移动电话网络远程存储图片和其他数据
公开(公告)号：US20060270452A1
公开(公告)日：2006-11-30
申请号：US11139046
申请日：2005-05-27
申请人： Levy Gerzberg
发明人： Levy Gerzberg
IPC分类号： H04L12/58 , H04B1/38 , H04M1/725 , H04M1/00 , H04Q7/22
CPC分类号： H04N21/41407 , H04M1/72527 , H04M1/72555 , H04N21/4135 , H04N21/4332 , H04N21/478 , H04N21/4788 , H04N21/6131 , H04N21/6181 , H04N21/632 , H04N21/8153
摘要： A mobile (cellular) telephone capability is built into a non-mobile appliance, such as a video recorder, television set-top box or personal computer, in order to receive calls from another telephone that is remote of the appliance. The appliance has a unique telephone number that is dialed by the other telephone to establish a direct connection between the two over a mobile telephone network. Data are then sent to the appliance through the network, such as data of pictures taken by a mobile picture telephone and any accompany sound. A user of a picture telephone may conveniently send pictures to his or her home or office while traveling on vacation or business, and even remotely cause such pictures to be sent from the appliance to friends and family.
摘要翻译：移动（蜂窝）电话能力内置在诸如录像机，电视机顶盒或个人计算机之类的非移动设备中，以便接收来自远离设备的另一电话机的呼叫。该设备具有由另一个电话拨打的唯一电话号码，以通过移动电话网络建立两者之间的直接连接。然后通过网络将数据发送到设备，例如由移动图片电话拍摄的照片的数据和任何伴随的声音。图片电话的用户可以方便地在度假或商务旅行时将照片发送到他或她的家庭或办公室，甚至远程地将这样的照片从设备发送给朋友和家人。

9. 发明授权

US4882611A Double layer voltage-programmable device and method of manufacturing same 失效
标题翻译：双层电压可编程器件及其制造方法
公开(公告)号：US4882611A
公开(公告)日：1989-11-21
申请号：US222653
申请日：1988-07-21
申请人： Ilan A. Blech , Levy Gerzberg , Yosef Y. Shacham , Alexander Sinar , Eric R. Sirkin
发明人： Ilan A. Blech , Levy Gerzberg , Yosef Y. Shacham , Alexander Sinar , Eric R. Sirkin
IPC分类号： H01L45/00
CPC分类号： H01L45/165 , H01L45/10 , H01L45/1233 , H01L45/148
摘要： A voltage-programmable device in which the programming voltage V.sub.p and the "off" resistance R.sub.i are separately controlled. The device includes a body of semiconductor material having a doped region therein, and an amorphized layer in the doped region and abutting a surface, and a surface layer in the amorphized layer with the surface layer having a resistivity higher than the resistivity of the amorphized layer prior ot programming of the device. The surface layer has a miniscule thickness (on the order of 50-150 Angstroms) and does not affect the programming of the device. Moreover, the final resistance of the programmed device is not significantly affected by the presence of the first layer. The amorphized layer is formed by ion implantation, and the or by oxygen plasma treatment.
摘要翻译：编程电压Vp和“截止”电阻Ri分别被控制的电压可编程装置。该器件包括其中具有掺杂区域的半导体材料体和掺杂区域中的非晶化层并邻接表面，并且非晶化层中的表面层具有比非晶化层的电阻率高的表面层以前的设备编程。表面层具有微小的厚度（大约50-150埃），并且不影响器件的编程。此外，编程设备的最终电阻不受第一层的存在的显着影响。非晶化层通过离子注入形成，或通过氧等离子体处理形成。

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