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    • 6. 发明授权
    • Process for making multifunction integrated optics chips having high
electro-optic coefficients
    • 制造具有高电光系数的多功能集成光学芯片的工艺
    • US5193136A
    • 1993-03-09
    • US799716
    • 1991-11-26
    • Chin L. ChangDaniel A. NiebauerAlbert Choi
    • Chin L. ChangDaniel A. NiebauerAlbert Choi
    • G02B6/134
    • G02B6/1345
    • Methods for making proton-exchanged, multi-function integrated optics chips, preferably chips based on the stable, rhombohedral lithium niobate structure, and having substantially diffused protons, while being substantially free of microcracking and of internal stresses that can result in microcracking, and yet having optimally high electro-optic coefficients, include the steps of: forming a multi-function integrated optics chip substrate from a substrate such as lithium niobate; affixing a removable mask or mask pattern to at least one surface of the chip to form one or more proton-exchanged patterns of desired size and shape at the surface of the chip; treating the masked chip with a proton-exchanging acid such as benzoic acid at a temperature and for a time sufficient to cause substantial proton exchange at and below the unmasked surface of the chip, but for a time insufficient to create any microcracking or internal stresses that lead to microcracking in the chip; removing the mask or mask pattern from the chip; and thermally annealing the chip, in an oxygen-containing environment, at a temperature and for a time sufficient to diffuse the hydrogen ions at and near the surface of the chip substantially below its surface, at a temperature and for a time sufficient to optimize the polarization extinction ratio of the chip, and for a time and at a temperature sufficient to restore and to optimize the electro-optic coefficient and to reduce light and propagation losses in the chip.
    • 用于制造质子交换的多功能集成光学芯片的方法,优选基于稳定的菱面体铌酸锂结构的芯片,并且具有基本上扩散的质子,同时基本上没有可能导致微裂纹的微裂纹和内部应力,然而 具有最佳的电光系数包括以下步骤:从诸如铌酸锂的衬底形成多功能集成光学芯片衬底; 将可移除的掩模或掩模图案附着到所述芯片的至少一个表面,以在所述芯片的表面处形成一个或多个所需尺寸和形状的质子交换图案; 在质子交换的酸如苯甲酸的温度和时间下处理掩蔽的芯片,足以在芯片的未掩模表面和下方引起基本的质子交换,但不足以产生任何微裂纹或内部应力, 导致芯片中的微裂纹; 从芯片去除掩模或掩模图案; 并且在含氧环境中,在足以使基片表面附近和附近的氢离子扩散到基本上低于其表面的温度和时间的温度和时间足以优化所述芯片, 并且在足以恢复并优化电光系数并减少芯片中的光和传播损耗的时间和温度下达到极化消光比。