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1. 发明申请

US20060237802A1 Method for improving SOG process 审中-公开
标题翻译：改善SOG工艺的方法
公开(公告)号：US20060237802A1
公开(公告)日：2006-10-26
申请号：US11110862
申请日：2005-04-21
申请人： Lee-Jen Chen , Chin-Ta Su , Kuang-Wen Liu , Chien-Hung Lu , Shing-Ann Luo
发明人： Lee-Jen Chen , Chin-Ta Su , Kuang-Wen Liu , Chien-Hung Lu , Shing-Ann Luo
IPC分类号： H01L29/76
CPC分类号： H01L21/31612 , G11C16/0466 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/316 , H01L27/11521 , H01L27/11568 , H01L29/40114 , H01L29/40117 , H01L29/66825 , H01L29/66833
摘要： A method for forming a memory device includes providing a substrate, providing a plurality of features on the substrate, and forming a silicon-rich dielectric layer over the features. An inter-layer dielectric (ILD) or inter-metal dielectric (IMD) layer may be formed by a spin-on-glass (SOG) process on the silicon-rich dielectric layer, the silicon-rich dielectric layer preventing diffusion of a solvent used in the SOG process.
摘要翻译：用于形成存储器件的方法包括提供衬底，在衬底上提供多个特征，以及在特征上形成富硅介电层。层间电介质（ILD）或金属间电介质（IMD）层可以通过在富硅介电层上的旋涂玻璃（SOG）工艺形成，富硅介电层防止溶剂扩散用于SOG过程。

2. 发明授权

US07144824B2 Method for controlling the properties of DARC and manufacturing DARC 有权
公开(公告)号：US07144824B2
公开(公告)日：2006-12-05
申请号：US11002940
申请日：2004-12-01
申请人： Shing-Ann Luo , Chien-Hung Lu , Chin-Ta Su
发明人： Shing-Ann Luo , Chien-Hung Lu , Chin-Ta Su
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： G03F7/091 , H01L21/0276
摘要： A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas comprising silicon-containing gas and oxygen for controlling the n value of the DARC. Furthermore, the proportion of the silicon-containing gas to the oxygen or the proportion of the silicon-containing gas to the nitrogen-containing gas is increased to control the k value of the DARC. By means of proper control of the n value and the k value, the DARC can have the lowest substrate reflectivity.

3. 发明申请

US20060115991A1 Method for controlling the properties of DARC and manufacturing DARC 有权
标题翻译：控制DARC的性质和制造DARC的方法
公开(公告)号：US20060115991A1
公开(公告)日：2006-06-01
申请号：US11002940
申请日：2004-12-01
申请人： Shing-Ann Luo , Chien-Hung Lu , Chin-Ta Su
发明人： Shing-Ann Luo , Chien-Hung Lu , Chin-Ta Su
IPC分类号： H01L21/31
CPC分类号： G03F7/091 , H01L21/0276
摘要： A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas comprising silicon-containing gas and oxygen for controlling the n value of the DARC. Furthermore, the proportion of the silicon-containing gas to the oxygen or the proportion of the silicon-containing gas to the nitrogen-containing gas is increased to control the k value of the DARC. By means of proper control of the n value and the k value, the DARC can have the lowest substrate reflectivity.
摘要翻译：提供了一种用于控制电介质抗反射涂层（DARC）的性能的方法。在形成DARC的过程中，将含氮气体加入包含含硅气体和氧气的反应气体中，以控制DARC的n值。此外，增加含硅气体与氧气的比例或含氮气体与含氮气体的比例，以控制DARC的k值。通过适当地控制n值和k值，DARC可以具有最低的衬底反射率。

4. 发明授权

US06855617B1 Method of filling intervals and fabricating shallow trench isolation structures 有权
标题翻译：填充间隔和制造浅沟槽隔离结构的方法
公开(公告)号：US06855617B1
公开(公告)日：2005-02-15
申请号：US10707083
申请日：2003-11-20
申请人： Chien-Hung Lu , Chin-Ta Su , Kuang-Chao Chen
发明人： Chien-Hung Lu , Chin-Ta Su , Kuang-Chao Chen
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224
摘要： A method of filling intervals between protruding structures is provided. A substrate with a plurality of protruding structures thereon is provided. The protruding structures are distributed over the substrate such that intervals are formed between adjacent protruding structures. A first dielectric layer is formed over the substrate so that the dielectric material fills the intervals between the protruding structures and covers the protruding structures as well. The first dielectric layer has a plurality of apertures therein located at a level above a top section of the protruding structures. A chemical/mechanical polishing operation is performed to remove a portion of the dielectric layer and expose the apertures to form a plurality of openings. An anisotropic etching operation is performed to increase the width of these openings. Finally, a second dielectric layer is formed over the first dielectric layer to fill the openings completely.
摘要翻译：提供了一种在突出结构之间填充间隔的方法。提供其上具有多个突出结构的基板。突出结构分布在基板上，使得在相邻突出结构之间形成间隔。第一电介质层形成在衬底上，使得介电材料填充突出结构之间的间隔并且也覆盖突出结构。第一电介质层具有位于突出结构的顶部的上方的多个孔。执行化学/机械抛光操作以去除电介质层的一部分并暴露孔以形成多个开口。进行各向异性蚀刻操作以增加这些开口的宽度。最后，在第一介电层上形成第二电介质层，以完全填充开口。

5. 发明授权

US07235496B2 HDPCVD process and method for improving uniformity of film thickness 有权
标题翻译： HDPCVD工艺和提高膜厚均匀性的方法
公开(公告)号：US07235496B2
公开(公告)日：2007-06-26
申请号：US10711512
申请日：2004-09-23
申请人： Chien-Hung Lu , Chin-Ta Su
发明人： Chien-Hung Lu , Chin-Ta Su
IPC分类号： H01L21/31
CPC分类号： C23C16/50 , C23C16/4584
摘要： A high density plasma chemical vapor deposition (HDPCVD) process is disclosed. First, a first deposition step is performed on a wafer. Then, the wafer is rotated with an angle. A second deposition step is performed for completing the deposition. By the rotation of the wafer, the thin film is formed with a desired uniformity.
摘要翻译：公开了一种高密度等离子体化学气相沉积（HDPCVD）工艺。首先，在晶片上进行第一沉积步骤。然后，晶片以一定角度旋转。执行第二沉积步骤以完成沉积。通过晶片的旋转，以期望的均匀性形成薄膜。

6. 发明申请

US20060063390A1 HDPCVD PROCESS AND METHOD FOR IMPROVING UNIFORMITY OF FILM THICKNESS 有权
标题翻译： HDPCVD方法和改善膜厚度均匀性的方法
公开(公告)号：US20060063390A1
公开(公告)日：2006-03-23
申请号：US10711512
申请日：2004-09-23
申请人： Chien-Hung Lu , Chin-Ta Su
发明人： Chien-Hung Lu , Chin-Ta Su
IPC分类号： H01L21/469
CPC分类号： C23C16/50 , C23C16/4584
摘要： A high density plasma chemical vapor deposition (HDPCVD) process is disclosed. First, a first deposition step is performed on a wafer. Then, the wafer is rotated with an angle. A second deposition step is performed for completing the deposition. By the rotation of the wafer, the thin film is formed with a desired uniformity.
摘要翻译：公开了一种高密度等离子体化学气相沉积（HDPCVD）工艺。首先，在晶片上进行第一沉积步骤。然后，晶片以一定角度旋转。执行第二沉积步骤以完成沉积。通过晶片的旋转，以期望的均匀性形成薄膜。

7. 发明授权

US11617408B2 Pivoting shield assembly for hat 有权
公开(公告)号：US11617408B2
公开(公告)日：2023-04-04
申请号：US17316831
申请日：2021-05-11
申请人： Chien-Hung Lu
发明人： Chien-Hung Lu
IPC分类号： A42B3/22
摘要： A pivoting shield assembly for hats is revealed. The pivoting shield assembly includes mounting slots arranged at two sides of a hat, a pivot base mounted to each mounting slot, a first connecting rod and a second connecting rod each of which having one end pivotally connected to the pivot base and the other end pivotally mounted to a shield, and a pathway groove disposed on an inner side of the first connecting rod. The pivot base includes an elastic locking piece which is mounted and moveable in the pathway groove correspondingly. Thereby lifting up and pulling down of the shield are more precise and having different stages. The pivoting shield assembly for hats is practical.

8. 发明授权

US11653710B2 Construction helmet 有权
公开(公告)号：US11653710B2
公开(公告)日：2023-05-23
申请号：US17137906
申请日：2020-12-30
申请人： Chien-Hung Lu
发明人： Chien-Hung Lu
IPC分类号： A42B3/08 , A42B3/14 , A42B3/04 , A42B3/06
CPC分类号： A42B3/145 , A42B3/0406 , A42B3/08 , A42B3/06
摘要： A comfortable construction helmet easy to assembly and adjust is revealed. The construction helmet includes a support frame mounted therein and a head cushion fixed on the support frame for allowing a user's forehead to abut against. Left and right straps are extended from two sides of the support frame while an adjustment assembly is disposed between the left and right straps for adjusting the length of the straps. The adjustment assembly includes a base, a rotating member mounted in the base, an outer cap, and a toothed disc arranged over the rotating member and positioned in the outer cap. Two connecting strip are extended from two sides of the rotating member and connected to the left and right straps respectively. The toothed disc which is driven by the outer cap further drives the rotating member to rotate for changing the length of the connecting strips.

9. 发明授权

US11805839B2 Headwear with a protective shield 有权
公开(公告)号：US11805839B2
公开(公告)日：2023-11-07
申请号：US17585578
申请日：2022-01-27
申请人： Chien-Hung Lu
发明人： Chien-Hung Lu
IPC分类号： A42B3/22 , A42B1/0184
CPC分类号： A42B3/222 , A42B1/0184
摘要： A headwear includes a hat having two connection portions formed to two opposite sides of the hat. Two connectors are respectively connected to the two connection portions of the hat by two respective first end parts thereof. Two first arms are respectively and pivotably connected between two respective second end parts of the two connectors and a protective shield. Two second arms are respectively and pivotably connected between two respective second end parts of the two connectors and the protective shield. The first and second arms form a link mechanism to smoothly pivot the protective shield between its operation position and its folded position relative to the hat.

10. 发明申请

US20060284663A1 TIMING CONTROL CIRCUIT AND METHOD 审中-公开
标题翻译：时序控制电路及方法
公开(公告)号：US20060284663A1
公开(公告)日：2006-12-21
申请号：US11160232
申请日：2005-06-15
申请人： Chien-Hung Lu , Yi-Chiang Lai , Ho-Ming Su
发明人： Chien-Hung Lu , Yi-Chiang Lai , Ho-Ming Su
IPC分类号： H03H11/26
CPC分类号： H03H11/26
摘要： A timing control circuit and a timing control method are provided. The circuit and method is for outputting a plurality of latch pulses in a TFT-LCD to avoid a rewriting phenomenon. The timing control circuit is characterized in that among the latch pulses, except for the first latch pulse, each latch pulse synchronizes with or follows behind a previous latch pulse corresponding thereto, and at least one latch pulse falls behind a previous latch pulse corresponding thereto.
摘要翻译：提供了一种定时控制电路和定时控制方法。该电路和方法用于在TFT-LCD中输出多个锁存脉冲以避免重写现象。定时控制电路的特征在于，在锁存脉冲之外，除了第一锁存脉冲之外，每个锁存脉冲与对应于其的先前锁存脉冲同步或跟随，并且至少一个锁存脉冲落在与之对应的先前锁存脉冲之后。

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