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1. 发明授权

US06905736B1 Fabrication of nano-scale temperature sensors and heaters 失效
标题翻译：制造纳米级温度传感器和加热器
公开(公告)号：US06905736B1
公开(公告)日：2005-06-14
申请号：US10084688
申请日：2002-02-27
申请人： Lee Chow , Dan Zhou , Fred Stevie
发明人： Lee Chow , Dan Zhou , Fred Stevie
IPC分类号： B05D5/12 , C23C14/14 , C23C14/16 , C23C16/04 , C23C16/16 , C23C16/48 , G01K7/02
CPC分类号： C23C16/16 , B82Y15/00 , C23C16/047 , C23C16/486 , G01K7/028 , G01K2211/00
摘要： The method for the fabrication of nano scale temperature sensors and nano scale heaters using focused ion beam (FIB) techniques. The process used to deposit metal nano strips to form a sensor is ion beam assisted chemical vapor deposition (CVD). The FIB Ga+ ion beam can be used to decompose W(CO)6 molecules to deposit a tungsten nano-strip on a suitable substrate. The same substrate can also be used for Pt nano-strip deposition. The precursors for the Pt can be trimethyl platinum (CH3)3Pt in the present case. Because of the Ga+ beam used in the deposition, both Pt and W nano-strips can contain a certain percentage of Ga impurities, which we denoted as Pt(Ga) and W(Ga) respectively. Our characterization of the response of this Pt(Ga)/W(Ga) nano scale junction indicates it has a temperature coefficient of approximately 5.4 mV/° C. This is a factor of approximately 130 larger than the conventional K-type thermocouples.
摘要翻译：使用聚焦离子束（FIB）技术制造纳米级温度传感器和纳米级加热器的方法。用于沉积金属纳米带以形成传感器的方法是离子束辅助化学气相沉积（CVD）。 FIB Ga + +离子束可用于分解W（CO）6分子，以将钨纳米带沉积在合适的基底上。相同的衬底也可以用于Pt纳米带沉积。在这种情况下，Pt的前体可以是三甲基铂（CH 3 3）3 N 3 Pt。由于沉积中使用的Ga + + +光束，Pt和W纳米条带都可以包含一定百分比的Ga杂质，我们分别表示为Pt（Ga）和W（Ga）。我们对Pt（Ga）/ W（Ga）纳米级结的响应的表征表明其具有约5.4mV /℃的温度系数。这是比常规K型热电偶大约130倍的因子。

2. 发明授权

US07009487B1 Fabrication of nano-scale temperature sensors and heaters 失效
标题翻译：制造纳米级温度传感器和加热器
公开(公告)号：US07009487B1
公开(公告)日：2006-03-07
申请号：US10764242
申请日：2004-01-23
申请人： Lee Chow , Dan Zhou , Fred Stevie
发明人： Lee Chow , Dan Zhou , Fred Stevie
IPC分类号： H01C3/04
CPC分类号： C23C16/16 , B82Y15/00 , C23C16/047 , C23C16/486 , G01K7/028 , G01K2211/00
摘要： The method for the fabrication of nano scale temperature sensors and nano scale heaters using focused ion beam (FIB) techniques. The process used to deposit metal nano strips to form a sensor is ion beam assisted chemical vapor deposition (CVD). The FIB Ga+ ion beam can be used to decompose W(CO)6 molecules to deposit a tungsten nano-strip on a suitable substrate. The same substrate can also be used for Pt nano-strip deposition. The precursors for the Pt can be trimethyl platinum (CH3)3Pt in the present case. Because of the Ga+ beam used in the deposition, both Pt and W nano-strips can contain a certain percentage of Ga impurities, which we denoted as Pt(Ga) and W(Ga) respectively. Our characterization of the response of this Pt(Ga)/W(Ga) nano scale junction indicates it has a temperature coefficient of approximately 5.4 mV/° C. This is a factor of approximately 130 larger than the conventional K-type thermocouples.
摘要翻译：使用聚焦离子束（FIB）技术制造纳米级温度传感器和纳米级加热器的方法。用于沉积金属纳米带以形成传感器的方法是离子束辅助化学气相沉积（CVD）。 FIB Ga + +离子束可用于分解W（CO）6分子，以将钨纳米带沉积在合适的基底上。相同的衬底也可以用于Pt纳米带沉积。在这种情况下，Pt的前体可以是三甲基铂（CH 3 3）3 N 3 Pt。由于沉积中使用的Ga + + +光束，Pt和W纳米条带都可以包含一定百分比的Ga杂质，我们分别表示为Pt（Ga）和W（Ga）。我们对Pt（Ga）/ W（Ga）纳米级结的响应的表征表明其具有约5.4mV /℃的温度系数。这是比常规K型热电偶大约130倍的因子。

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