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1. 发明申请

US20070053643A1 Ridge technique for fabricating an optical detector and an optical waveguide 失效
标题翻译：用于制造光学检测器和光波导的脊技术
公开(公告)号：US20070053643A1
公开(公告)日：2007-03-08
申请号：US11514291
申请日：2006-08-31
申请人： Lawrence West , Gregory Wojcik , Francisco Leon , Yonah Cho , Andreas Goebel
发明人： Lawrence West , Gregory Wojcik , Francisco Leon , Yonah Cho , Andreas Goebel
IPC分类号： G02B6/10
CPC分类号： G02B6/132 , G02B6/12004 , G02B6/1347 , G02B6/136 , G02B2006/12097 , G02B2006/121 , G02B2006/12123 , G02B2006/12176 , H01L31/02327 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating on a substrate an optical detector in an optical waveguide, the method involving: forming at least one layer on a surface of the substrate, said at least one layer comprising SiGe; implanting an impurity into the at least one layer over a first area to form a detector region for the optical detector; etching into the at least one layer in a first region and a second region to form a ridge between the first and second regions, said ridge defining the optical detector and the optical waveguide; filling the first and second regions with a dielectric material having a lower refractive index than SiGe; and after filling the first and second regions with the dielectric material, removing surface material to form a planarized upper surface.
摘要翻译：一种在光波导中在基板上制造光检测器的方法，所述方法包括：在所述基板的表面上形成至少一层，所述至少一层包括SiGe; 在第一区域上将杂质注入到所述至少一个层中以形成用于所述光学检测器的检测器区域; 在第一区域和第二区域中蚀刻到所述至少一个层中以在所述第一和第二区域之间形成脊，所述脊限定所述光学检测器和所述光波导; 用具有比SiGe低的折射率的电介质材料填充第一和第二区域; 并且在用电介质材料填充第一和第二区域之后，去除表面材料以形成平坦化的上表面。

2. 发明申请

US20070018270A1 Embedded waveguide detectors 审中-公开
标题翻译：嵌入式波导检测器
公开(公告)号：US20070018270A1
公开(公告)日：2007-01-25
申请号：US11484009
申请日：2006-07-10
申请人： Francisco Leon , Lawrence West , Yuichi Wada , Gregory Wojcik , Stephen Moffatt
发明人： Francisco Leon , Lawrence West , Yuichi Wada , Gregory Wojcik , Stephen Moffatt
IPC分类号： H01L31/00
CPC分类号： G02B6/12004 , G02B2006/12061 , H01L31/0232 , H01L31/0288 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
摘要翻译：一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。

3. 发明申请

US20050054130A1 Maskless Fabrication of waveguide mirrors 失效
标题翻译：波导镜无掩模制造
公开(公告)号：US20050054130A1
公开(公告)日：2005-03-10
申请号：US10858524
申请日：2004-05-28
申请人： Francisco Leon , Lawrence West , Gregory Wojcik , Yuichi Wada
发明人： Francisco Leon , Lawrence West , Gregory Wojcik , Yuichi Wada
IPC分类号： G02B6/12 , G02B6/122 , G02B6/132 , G02B6/136 , H01L21/00 , H01L21/76
CPC分类号： G02B6/12004 , G02B6/122 , G02B6/132 , G02B6/136 , G02B2006/121 , G02B2006/12104
摘要： A method of fabricating a waveguide mirror that involves etching a trench in a silicon substrate; depositing a film (e.g. silicon dioxide) over the surface of the silicon substrate and into the trench; ion etching the film to remove at least some of the deposited silicon dioxide and to leave a facet of film in inside corners of the trench; depositing a layer of SiGe over the substrate to fill up the trench; and planarizing the deposited SiGe to remove the SiGe from above the level of the trench.
摘要翻译：一种制造波导反射镜的方法，涉及蚀刻硅衬底中的沟槽; 在硅衬底的表面上沉积膜（例如二氧化硅）并进入沟槽; 离子蚀刻膜以去除沉积的二氧化硅中的至少一些并且在沟槽的内部角落留下膜的小面; 在衬底上沉积一层SiGe以填充沟槽; 并且平坦化沉积的SiGe以从沟槽的高度上方除去SiGe。

4. 发明申请

US20050051767A1 Embedded waveguide detectors 失效
标题翻译：嵌入式波导检测器
公开(公告)号：US20050051767A1
公开(公告)日：2005-03-10
申请号：US10856750
申请日：2004-05-28
申请人： Francisco Leon , Lawrence West , Yuichi Wada , Gregory Wojcik , Stephen Moffatt
发明人： Francisco Leon , Lawrence West , Yuichi Wada , Gregory Wojcik , Stephen Moffatt
IPC分类号： G02B20060101 , G02B6/12 , H01L29/06 , H01L31/0232
CPC分类号： G02B6/12004 , G02B2006/12061 , H01L31/0232 , H01L31/0288 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
摘要翻译：一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。

5. 发明申请

US20050214964A1 Sige super lattice optical detectors 审中-公开
标题翻译：超晶格光学检测仪
公开(公告)号：US20050214964A1
公开(公告)日：2005-09-29
申请号：US10959599
申请日：2004-10-06
申请人： Lawrence West , Francisco Leon
发明人： Lawrence West , Francisco Leon
IPC分类号： H01L21/00 , H01L29/739 , H01L31/0328 , H01L31/0336 , H01L31/0352 , H01L31/072 , H01L31/103 , H01L31/109 , H01L31/18
CPC分类号： H01L31/03529 , B82Y20/00 , H01L31/035254 , H01L31/035281 , H01L31/1037 , H01L31/1812 , Y02E10/50
摘要： An optical detector including a substrate; an island of detector material formed on the substrate, the island being a stack extending up from the substrate of alternating layers of first and second semiconductor materials, the island having a horizontally oriented top end, a vertically oriented first sidewall, and vertically oriented second sidewall that is opposite the first sidewall, the island having a first doped region extending into the island through first sidewall and forming a first conductive region that extends down into the island of detector material, the island also having a second doped region extending into the island through the second sidewall and forming a second conductive region that extends down into island of the detector material, the first and second conductive regions each having a top end that is part of the top end of the island; a first electrical connection to the top end of the first conductive region; and a second electrical connection to the top end of the second conductive region.
摘要翻译：一种包括基板的光学检测器; 形成在基板上的检测器材料的岛，该岛是从第一和第二半导体材料的交替层的衬底向上延伸的堆，该岛具有水平取向的顶端，垂直取向的第一侧壁和垂直取向的第二侧壁所述岛具有通过第一侧壁延伸到岛中的第一掺杂区域，并且形成向下延伸到探测器材料岛的第一导电区域，该岛还具有延伸到岛中的第二掺杂区域所述第二侧壁并形成向下延伸到所述检测器材料岛的第二导电区域，所述第一和第二导电区域各自具有作为所述岛的顶端的一部分的顶端; 与所述第一导电区域的顶端的第一电连接; 以及到第二导电区域的顶端的第二电连接。

6. 发明申请

US20080029757A1 Semiconductor device having a laterally injected active region 审中-公开
标题翻译：具有横向注入的有源区的半导体器件
公开(公告)号：US20080029757A1
公开(公告)日：2008-02-07
申请号：US11599197
申请日：2006-11-14
申请人： Lawrence West , Francisco Leon
发明人： Lawrence West , Francisco Leon
IPC分类号： H01L29/06
CPC分类号： H01S5/0424 , B82Y20/00 , H01L33/06 , H01S5/0218 , H01S5/22 , H01S5/305 , H01S5/343
摘要： A semiconductor device including: a quantum well having photon emission energy level, the quantum well having at least one active layer and two barrier layers, one disposed above the active layer and one disposed below the active layer; and injection regions for injecting electrons into the quantum well, wherein the electrons are cool electrons with respect to the active layer of the quantum well.
摘要翻译：一种半导体器件，包括：具有光子发射能级的量子阱，所述量子阱具有至少一个有源层和两个势垒层，一个设置在有源层上方，一个设置在有源层下面; 以及用于将电子注入量子阱的注入区域，其中电子相对于量子阱的有源层为冷电子。

7. 发明申请

US20070272996A1 Self-aligned implanted waveguide detector 审中-公开
公开(公告)号：US20070272996A1
公开(公告)日：2007-11-29
申请号：US11787187
申请日：2007-04-13
申请人： Francisco Leon , Lawrence West
发明人： Francisco Leon , Lawrence West
IPC分类号： H01L31/075 , H01L31/18
CPC分类号： H01L31/035254 , B82Y20/00 , G02B6/12004
摘要： A method of fabricating a detector, the method including forming an island of detector core material on a substrate, the island having a horizontally oriented top end, a vertically oriented first sidewall, and a vertically oriented second sidewall that is opposite said first sidewall; implanting a first dopant into the first sidewall to form a first conductive region that has a top end that is part of the top end of the island; implanting a second dopant into the second sidewall to form a second conductive region that has a top end that is part of the top end of the island; fabricating a first electrical connection to the top end of the first conductive region; and fabricating a second electrical connection to the top end of the second conductive region.

8. 发明申请

US20050212068A1 Self-aligned implanted waveguide detector 失效
标题翻译：自对准植入波导检测器
公开(公告)号：US20050212068A1
公开(公告)日：2005-09-29
申请号：US10959897
申请日：2004-10-06
申请人： Francisco Leon , Lawrence West
发明人： Francisco Leon , Lawrence West
IPC分类号： H01L27/14
CPC分类号： H01L31/035254 , B82Y20/00 , G02B6/12004
摘要： A method of fabricating a detector, the method including forming an island of detector core material on a substrate, the island having a horizontally oriented top end, a vertically oriented first sidewall, and a vertically oriented second sidewall that is opposite said first sidewall; implanting a first dopant into the first sidewall to form a first conductive region that has a top end that is part of the top end of the island; implanting a second dopant into the second sidewall to form a second conductive region that has a top end that is part of the top end of the island; fabricating a first electrical connection to the top end of the first conductive region; and fabricating a second electrical connection to the top end of the second conductive region.
摘要翻译：一种制造检测器的方法，所述方法包括在衬底上形成检测器芯材料岛，所述岛具有水平取向的顶端，垂直取向的第一侧壁和与所述第一侧壁相对的垂直取向的第二侧壁; 将第一掺杂剂注入到所述第一侧壁中以形成具有作为所述岛的顶端的一部分的顶端的第一导电区域; 将第二掺杂剂注入所述第二侧壁中以形成具有作为所述岛的顶端的一部分的顶端的第二导电区域; 制造到第一导电区域的顶端的第一电连接; 以及制造到所述第二导电区域的顶端的第二电连接。

9. 发明申请

US20050053347A1 Impurity-based waveguide detectors 失效
标题翻译：基于杂质的波导检测器
公开(公告)号：US20050053347A1
公开(公告)日：2005-03-10
申请号：US10856127
申请日：2004-05-28
申请人： Lawrence West , Thomas Pearsall , Francisco Leon , Stephen Moffatt
发明人： Lawrence West , Thomas Pearsall , Francisco Leon , Stephen Moffatt
IPC分类号： G02B20060101 , G02B6/10 , G02B6/12 , G02B6/136 , G02B6/42 , H01L31/0232 , H01L31/0312 , H01L31/09 , H01L31/105 , H01L31/11 , H01L31/18 , H01S5/00
CPC分类号： G02B6/42 , G02B6/136 , G02B2006/12123 , H01L31/02327 , H01L31/0312 , H01L31/09 , H01L31/105 , H01L31/1105 , H01L31/1812 , Y02E10/50
摘要： An optical circuit including a semiconductor substrate; an optical waveguide formed in or on the substrate; and an optical detector formed in or on the semiconductor substrate, wherein the optical detector is aligned with the optical waveguide so as to receive an optical signal from the optical waveguide during operation, and wherein the optical detector has: a first electrode; a second electrode; and an intermediate layer between the first and second electrodes, the intermediate layer being made of a semiconductor material characterized by a conduction band, a valence band, and deep level energy states introduced between the conduction and valence bands.
摘要翻译：一种包括半导体衬底的光学电路; 形成在基板中或基板上的光波导; 以及形成在所述半导体衬底中或之上的光学检测器，其中所述光学检测器与所述光波导对准，以便在操作期间从所述光波导接收光信号，并且其中所述光学检测器具有：第一电极; 第二电极; 以及在所述第一和第二电极之间的中间层，所述中间层由导电带和导带之间引入的导带，价带和深能级状态的半导体材料制成。

10. 发明授权

US07528111B2 Method of vaccinating subjects receiving immune modulating therapy 有权
标题翻译：接种免疫调节疗法接种疫苗的方法
公开(公告)号：US07528111B2
公开(公告)日：2009-05-05
申请号：US11800860
申请日：2007-05-08
申请人： George Vratsanos , Francisco Leon , Lee K. Tay , Kenneth M. Bahrt
发明人： George Vratsanos , Francisco Leon , Lee K. Tay , Kenneth M. Bahrt
IPC分类号： A61K38/16 , C07K14/435 , C07K14/705
CPC分类号： C07K14/70521 , A61K39/00 , A61K39/08 , A61K39/092 , A61K39/12 , A61K39/145 , A61K2039/545 , A61K2039/55516 , A61K2039/57 , A61K2039/70 , C07K2319/30 , C07K2319/32 , C12N2760/16134 , C12N2760/16234 , A61K2300/00
摘要： The present invention relates to methods of vaccinating subjects receiving immune modulating therapy, such as soluble CTLA4 molecules, for treatment of immune system diseases mediated by T-cell interactions with B7-positive cells including, but not limited to, autoimmune diseases, immunoproliferative diseases, and immune disorders associated with graft transplantation.
摘要翻译：本发明涉及接种免疫调节治疗的受试者（例如可溶性CTLA4分子）的疫苗接种方法，用于治疗由与B7阳性细胞的T细胞相互作用介导的免疫系统疾病，包括但不限于自身免疫性疾病，免疫增殖性疾病，和与移植物移植相关的免疫疾病。

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