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1. 发明授权

US5721521A Notch-enhancement in band-reject filters 失效
标题翻译：带阻滤波器中的陷波增强
公开(公告)号：US5721521A
公开(公告)日：1998-02-24
申请号：US695153
申请日：1996-08-05
申请人： Lawrence Milton Drabeck , Martin Victor Schneider , Cuong Tran
发明人： Lawrence Milton Drabeck , Martin Victor Schneider , Cuong Tran
IPC分类号： H01P1/20
CPC分类号： H01P1/20
摘要： A band-reject filter includes a three port circulator having an input port, a second port connected to a bandpass filter terminated in a matched load, and a third output port. The loss of the band-reject filter is enhanced by controlling the amplitude and phase of a feed-forward signal, passing between the input port and output port, relative to the amplitude and phase of a reflected signal from the matched load.
摘要翻译：带阻滤波器包括具有输入端口的三端口循环器，连接到以匹配负载端接的带通滤波器的第二端口和第三输出端口。相对于来自匹配负载的反射信号的幅度和相位，通过控制在输入端口和输出端口之间通过的前馈信号的幅度和相位来增强带阻滤波器的损耗。

2. 发明授权

US5668560A Wireless electronic module 失效
标题翻译：无线电子模块
公开(公告)号：US5668560A
公开(公告)日：1997-09-16
申请号：US380277
申请日：1995-01-30
申请人： James Gifford Evans , Martin Victor Schneider , Cuong Tran
发明人： James Gifford Evans , Martin Victor Schneider , Cuong Tran
IPC分类号： H01Q1/22 , H01Q1/42 , H01Q1/24
CPC分类号： H01Q1/22 , H01Q1/42
摘要： A wireless electronic module includes a folded monopole antenna having an antenna port impedance which is reactive at the RF frequency of operation and which conjugately matches the reactive impedance of the electronic circuit which connects to the antenna port. A grounded shield is interposed between the antenna and the electronic circuit to reduce RF losses at the antenna.
摘要翻译：无线电子模块包括折叠的单极天线，其具有天线端口阻抗，该天线端口阻抗在RF操作频率下是无功的，并且与连接到天线端口的电子电路的无功阻抗共轭匹配。在天线和电子电路之间插入接地屏蔽，以减少天线的射频损耗。

3. 发明授权

US06218989B1 Miniature multi-branch patch antenna 失效
标题翻译：微型多分支贴片天线
公开(公告)号：US06218989B1
公开(公告)日：2001-04-17
申请号：US08698169
申请日：1996-08-08
申请人： Martin Victor Schneider , Cuong Tran
发明人： Martin Victor Schneider , Cuong Tran
IPC分类号： H01Q138
CPC分类号： H01Q9/0407 , H01Q1/40 , H01Q1/523
摘要： A miniature, multi-branch patch antenna suitable for operating in the 1 GHz to 100 GHz frequency range, a method for making same and a communication system using the same is disclosed. In one embodiment, the antenna comprises a planar dielectric substrate, a plurality of conducting antenna elements each having a feed port, a ground plane and a septum located between each conducting antenna element. In a second embodiment, the antenna comprises a planar dielectric substrate, a plurality of conducting antenna elements each having a feed port, a ground plane and a superstrate that is disposed on the plurality of conducting antenna elements and at least a portion of the dielectric substrate. The septum and the superstrate suppress undesirable coupling mechanisms. In a communication system according to the present invention, the miniature, multi-branch patch antenna is coupled to a transmitter and/or receiver.
摘要翻译：公开了一种适用于1GHz至100GHz频率范围内操作的微型多分支贴片天线，其制造方法和使用该天线的通信系统。在一个实施例中，天线包括平面介质衬底，多个导电天线元件，每个导体天线元件具有位于每个导电天线元件之间的馈电端口，接地平面和隔膜。在第二实施例中，天线包括平面电介质基板，多个导电天线元件，每个导体天线元件具有设置在多个导电天线元件和介电基片的至少一部分上的馈电端口，接地平面和覆盖层。隔膜和覆盖物抑制不期望的耦合机制。在根据本发明的通信系统中，微型多分支贴片天线耦合到发射机和/或接收机。

4. 发明授权

US5805034A Microstrip patch filters 失效
标题翻译：微带补丁过滤器
公开(公告)号：US5805034A
公开(公告)日：1998-09-08
申请号：US406289
申请日：1995-03-17
申请人： James G. Evans , Martin Victor Schneider , Robert W. Wilson
发明人： James G. Evans , Martin Victor Schneider , Robert W. Wilson
IPC分类号： H01P1/203 , H01P1/205 , H01P1/208 , H01P1/212 , H01P7/08 , H01P1/20
CPC分类号： H01P1/20381
摘要： A microstrip patch filter in which a dielectric has a ground plane printed on one of its faces and a conductive arrangement printed on the other of said faces, the conductive arrangement includes a flat patch, input and output leads electromagnetically coupled to the flat patch, the flat patch or the dielectric substrate has a reactance-enhancing metallic constriction located along a portion of the patch. When the constriction is in the patch it forms a current-concentrating inductive constriction. When the constriction is in the dielectric substrate, it enhances the capacitance. In an embodiment, the patch has two mutually-transverse constrictions that divide the patch into four sub-patches cross-connected by current-concentrating inductive constriction.
摘要翻译：一种微带贴片滤波器，其中电介质具有印刷在其一个面上的接地平面和印刷在另一个所述面上的导电布置，所述导电布置包括平坦贴片，电磁耦合到所述平坦贴片的输入和输出引线，平面贴片或介电衬底具有沿着贴片的一部分定位的电抗增强金属收缩部。当收缩处在贴片中时，它形成电流集中的感应收缩。当收缩在电介质基片中时，它会增加电容。在一个实施例中，贴片具有两个相互横向的收缩，其将贴片分成四个通过电流集中感应收缩交叉连接的子贴片。

5. 发明授权

US5870057A Small antennas such as microstrip patch antennas 失效
标题翻译：小型天线如微带贴片天线
公开(公告)号：US5870057A
公开(公告)日：1999-02-09
申请号：US785975
申请日：1997-01-22
申请人： James G. Evans , Martin Victor Schneider , Robert W. Wilson
发明人： James G. Evans , Martin Victor Schneider , Robert W. Wilson
IPC分类号： H01Q1/38 , H01Q1/40 , H01Q9/04
CPC分类号： H01Q9/0407 , H01Q1/38 , H01Q1/40
摘要： In an antenna having a conductor of a length L and a dielectric material with a dielectric constant .epsilon..sub.r1 contacting the conductor, a matching dielectric layer .epsilon..sub.r2 less than .epsilon..sub.r1 matches the dielectric constant to free space. Preferably .epsilon..sub.r2 =.sqroot..epsilon..sub.r1 , L=.lambda..sub.o /(2.sqroot..epsilon..sub.r1 ). The depth d of the second dielectric is a quarter wavelength in the matching layer. Multiple matching layers with successively decreasing dielectric constants forms embodiments. In one embodiment the resonant conductive arrangement is a microstrip patch antenna with the dielectric material supporting a patch and matching layer covering the dielectric material.
摘要翻译：在具有长度为L的导体和具有与导体接触的介电常数ε1的介电材料的天线中，小于εr1的匹配电介质层ε2将介电常数与自由空间相匹配。优选地，εr2 = 2ROOT + E，radεr1 + EE，L =λo /（2 2ROOT + E，radεr1 + EE）。第二电介质的深度d是匹配层中的四分之一波长。具有连续降低的介电常数的多个匹配层形成实施例。在一个实施例中，谐振导电布置是微带贴片天线，其中介电材料支撑贴片和覆盖电介质材料的匹配层。

6. 发明授权

US4023260A Method of manufacturing semiconductor diodes for use in millimeter-wave circuits 失效
标题翻译：制造用于毫米波电路的半导体二极管的方法
公开(公告)号：US4023260A
公开(公告)日：1977-05-17
申请号：US664269
申请日：1976-03-05
申请人： Martin Victor Schneider
发明人： Martin Victor Schneider
IPC分类号： H01L21/301 , H01L21/304 , H01L21/78 , H01L29/872 , B01J17/00 , H01L21/302
CPC分类号： H01L21/3043 , H01L21/78 , H01L29/872 , Y10S257/926 , Y10S438/977
摘要： A new method of manufacturing semiconductor diodes is described in which the resulting diode chips have ohmic contacts on the four side surfaces of the diode chip. An insulating layer of a material such as silicon-dioxide is first formed on the epitaxial layer of a semiconductor wafer. Notches are then cut in a gridlike pattern into the semiconductor wafer on the side of the chip having the insulating layer. The notches extend approximately halfway into the semiconductor wafer and form a plurality of areas, each one of which has the dimensions of a desired diode chip. An ohmic contact is then established on the walls and bottoms of the notches by depositing a metallic layer and alloying this layer to the semiconductor material. A plurality of diodes are formed in holes in the insulating layer on each one of the areas representing an individual chip. The semiconductor wafer is then backlapped to remove the remaining material connecting the individual chips together thereby forming a plurality of individual diode chips.
摘要翻译：描述了制造半导体二极管的新方法，其中所得的二极管芯片在二极管芯片的四个侧表面上具有欧姆接触。首先在半导体晶片的外延层上形成诸如二氧化硅的材料的绝缘层。然后，在具有绝缘层的芯片一侧将凹口切割成格子状图案进入半导体晶片。凹口大致延伸到半导体晶片的中途，并形成多个区域，每个区域具有期望的二极管芯片的尺寸。然后通过沉积金属层并将该合金化到半导体材料上，在凹口的壁和底部上形成欧姆接触。在表示单个芯片的每个区域上的绝缘层中的孔中形成多个二极管。然后将半导体晶片重叠以除去将各个芯片连接在一起的剩余材料，从而形成多个单独的二极管芯片。

7. 发明授权

US4108738A Method for forming contacts to semiconductor devices 失效
标题翻译：用于形成与半导体器件的接触的方法
公开(公告)号：US4108738A
公开(公告)日：1978-08-22
申请号：US770014
申请日：1977-02-18
申请人： Alfred Yi Cho , Martin Victor Schneider
发明人： Alfred Yi Cho , Martin Victor Schneider
IPC分类号： H01L21/288 , H01L21/329 , H01L29/872 , C25D5/02 , C25D7/12
CPC分类号： H01L29/66212 , H01L21/2885 , H01L29/872
摘要： A Schottky barrier semiconductor device and process for making same is described wherein edge breakdown is avoided by making the rectifying contact in a curved depression in an epitaxial active layer having a nonuniform doping profile. The depression is formed by anodizing a portion of the epitaxial layer and etching the anodic oxide. Etching and electroplating of the contact are done in the same solution to avoid contamination of the metal-semiconductor interface.
摘要翻译：描述了肖特基势垒半导体器件及其制造方法，其中通过在具有不均匀掺杂分布的外延有源层中的弯曲凹陷中使整流接触避免了边缘击穿。通过阳极氧化外延层的一部分并蚀刻阳极氧化物形成凹陷。接触的蚀刻和电镀在相同的解决方案中进行，以避免金属 - 半导体界面的污染。

8. 发明授权

US3936301A Process for contact photolithography utilizing a photomask having indented channels 失效
标题翻译：使用具有缩进通道的光掩模的接触光刻技术
公开(公告)号：US3936301A
公开(公告)日：1976-02-03
申请号：US456555
申请日：1974-04-01
申请人： Martin Victor Schneider
发明人： Martin Victor Schneider
IPC分类号： G03F1/00 , G03F7/20 , H01L21/00 , H01L21/027 , G03C5/00 , G03C5/06
CPC分类号： H01L21/0271 , G03F7/2014 , H01L21/00
摘要： In contact type photolithographic masking processes for fabricating planar structures, a photoresist is applied to a wafer and a mask is placed over the photoresist. Illumination through the mask, which has a pattern of opaque areas, produces a photochemical reaction in the photoresist which upon developing creates a duplicate of the mask pattern. However, the photoresist is conventionally applied by a spinning process and the rotation produces a build-up of the photoresist around the edges of the wafer. This build-up prevents the pattern portion of the mask from making good physical contact with the photoresist with a resultant decrease in reproducibility and accuracy of the fabricated pattern. A modified mask is formed with a channel corresponding to the peripheral build-up. The channel accepts the build-up so that good contact may be maintained between the photoresist and the patterned portion of the mask.
摘要翻译：在用于制造平面结构的接触型光刻掩模工艺中，将光致抗蚀剂施加到晶片，并将掩模放置在光致抗蚀剂上。通过具有不透明区域图案的掩模的照明在光致抗蚀剂中产生光化学反应，其在显影时产生掩模图案的副本。然而，光致抗蚀剂通常通过旋转工艺施加，并且旋转产生围绕晶片边缘的光致抗蚀剂的积聚。这种堆积防止掩模的图案部分与光致抗蚀剂进行良好的物理接触，导致制造图案的再现性和精度的降低。形成具有对应于周边建立的通道的修改的掩模。通道接受积聚，从而可以在光致抗蚀剂和掩模的图案化部分之间保持良好的接触。

9. 发明授权

US4023258A Method of manufacturing semiconductor diodes for use in millimeter-wave circuits 失效
标题翻译：制造用于毫米波电路的半导体二极管的方法
公开(公告)号：US4023258A
公开(公告)日：1977-05-17
申请号：US664245
申请日：1976-03-05
申请人： Eric Robert Carlson , Arno Allan Penzias , Martin Victor Schneider
发明人： Eric Robert Carlson , Arno Allan Penzias , Martin Victor Schneider
IPC分类号： H01L21/304 , H01L21/78 , H01L29/872 , B01J17/00 , H01L21/302
CPC分类号： H01L29/872 , H01L21/3043 , H01L21/78 , Y10S257/926
摘要： A new method of semiconductor diode processing is described in which the resulting diode chips have an ohmic contact on four side faces of the chip. This is accomplished by cutting notches in the back side of a semiconductor slice before processing and by breaking the slice along the notches after fabricating the diodes on the front side of the slice. The new diode chip has a smaller series resistance than conventional millimeter-wave structures, and it can be readily bonded or soldered to millimeter-wave thin film circuits.
摘要翻译：描述了半导体二极管处理的新方法，其中所得的二极管芯片在芯片的四个侧面上具有欧姆接触。这是通过在处理之前切割半导体薄片的背面的切口并且在制造切片的前侧上的二极管之后沿切口断开切片来实现的。新型二极管芯片具有比传统毫米波结构更小的串联电阻，并且可以容易地粘合或焊接到毫米波薄膜电路。

10. 发明授权

US3932184A Fabrication of microlenses 失效
标题翻译：微透镜制作
公开(公告)号：US3932184A
公开(公告)日：1976-01-13
申请号：US364501
申请日：1973-05-29
申请人： Leonard George Cohen , Martin Victor Schneider
发明人： Leonard George Cohen , Martin Victor Schneider
IPC分类号： G02B6/42 , G03F7/00 , G03C5/00 , G03C11/00
CPC分类号： G02B6/4203 , G03F7/0005
摘要： Photolithographic techniques are employed to fabricate hemispherical or semicylindrical microlenses on the end surfaces of optical fibers. The power coupling efficiency between junction lasers and fibers is thereby significantly increased.
摘要翻译：采用光刻技术在光纤端面制造半球形或半圆柱形微透镜。因此，结合激光器和光纤之间的功率耦合效率显着增加。

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