专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08318586B2 Nitrogen-plasma surface treatment in a direct bonding method 有权
标题翻译：直接接合法进行氮等离子体表面处理
公开(公告)号：US08318586B2
公开(公告)日：2012-11-27
申请号：US12994792
申请日：2009-04-28
申请人： Laure Libralesso , Hubert Moriceau , Christophe Morales , François Rieutord , Caroline Ventosa , Thierry Chevolleau
发明人： Laure Libralesso , Hubert Moriceau , Christophe Morales , François Rieutord , Caroline Ventosa , Thierry Chevolleau
IPC分类号： H01L21/30 , H01L21/31
CPC分类号： H01L21/76251 , H01L21/2007
摘要： Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.
摘要翻译：通过使至少一个板的薄层经受表面处理步骤，形成厚度小于或等于的氮氧化硅表面薄膜的表面处理步骤，将在其表面上包含薄层硅或氧化硅的两个板接合 5nm。薄膜由电感耦合等离子体源产生的氮基等离子体进行。此外，在表面处理步骤期间，等离子体和支撑所述板的衬底保持器之间施加的电位差小于50V，有利地小于15V，优选为零。这使得能够获得无缺陷的接合界面，而与在两个板的各个薄层之间的接触步骤之后进行的任何热处理的温度无关。

2. 发明申请

US20110129986A1 NITROGEN-PLASMA SURFACE TREATMENT IN A DIRECT BONDING METHOD 有权
标题翻译： NITROGEN-PLASMA表面处理在直接粘结方法中的应用
公开(公告)号：US20110129986A1
公开(公告)日：2011-06-02
申请号：US12994792
申请日：2009-04-28
申请人： Laure Libralesso , Hubert Moriceau , Christophe Morales , Francois Rieutord , Caroline Ventosa , Thierry Chevolleau
发明人： Laure Libralesso , Hubert Moriceau , Christophe Morales , Francois Rieutord , Caroline Ventosa , Thierry Chevolleau
IPC分类号： H01L21/30
CPC分类号： H01L21/76251 , H01L21/2007
摘要： Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5 nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.
摘要翻译：通过使至少一个板的薄层经受表面处理步骤，形成厚度小于或等于的氮氧化硅表面薄膜的表面处理步骤，将在其表面上包含薄层硅或氧化硅的两个板接合 5nm。薄膜由电感耦合等离子体源产生的氮基等离子体进行。此外，在表面处理步骤期间，等离子体和支撑所述板的衬底保持器之间施加的电位差小于50V，有利地小于15V，优选为零。这使得能够获得无缺陷的接合界面，而与在两个板的各个薄层之间的接触步骤之后进行的任何热处理的温度无关。

3. 发明申请

US20070202660A1 Method For Producing Mixed Stacked Structures, Different Insulating Areas And/Or Localised Vertical Electrical conducting Areas 有权
标题翻译：生产混合堆叠结构，不同绝缘区域和/或局部垂直导电区域的方法
公开(公告)号：US20070202660A1
公开(公告)日：2007-08-30
申请号：US11576743
申请日：2005-10-06
申请人： Hubert Moriceau , Frank Fournel , Christophe Morales
发明人： Hubert Moriceau , Frank Fournel , Christophe Morales
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/76224
摘要： The invention relates to a method for producing a semiconducting structure including: controlled formation, through a mask (31), in a first substrate (30) in a semiconducting material, of at least one first area in an insulating material (36), up to the level of the lower surface (35) of the mask, before or during the removal of the mask.
摘要翻译：本发明涉及一种用于制造半导体结构的方法，包括：通过掩模（31）在绝缘材料（36）中的至少一个第一区域的半导体材料的第一衬底（30）中控制形成到达掩模的下表面（35）的水平面前，或在去除掩模期间。

4. 发明申请

US20070117258A1 Method for the molecular bonding of microelectronic components to a polymer film 有权
标题翻译：微电子元件分子结合到聚合物膜上的方法
公开(公告)号：US20070117258A1
公开(公告)日：2007-05-24
申请号：US10581111
申请日：2004-12-06
申请人： Hubert Moriceau , Christophe Morales , Lea Di Cioccio
发明人： Hubert Moriceau , Christophe Morales , Lea Di Cioccio
IPC分类号： H01L21/00 , H01L23/02
CPC分类号： H01L25/50 , H01L24/08 , H01L24/80 , H01L25/0657 , H01L2224/08145 , H01L2224/08225 , H01L2224/8001 , H01L2224/80012 , H01L2224/80896 , H01L2224/80948 , H01L2924/0002
摘要： A method for direct molecular adhesion of an electronic compound (6) on a polymer (4) is described. The polymer (4) is coated with a bonding layer (5), for example silicon oxide, which enables the problems caused by the presence of hydrocarbons to be overcome. The method makes it possible to produce adhesive-free three-dimensional structures (10).
摘要翻译：描述了电子化合物（6）在聚合物（4）上直接分子粘合的方法。聚合物（4）涂覆有结合层（5），例如氧化硅，其能够克服由烃的存在引起的问题。该方法使得可以生产无粘合剂的三维结构（10）。

5. 发明授权

US08302278B2 Method and device for separating a structure 失效
标题翻译：分离结构的方法和装置
公开(公告)号：US08302278B2
公开(公告)日：2012-11-06
申请号：US12341645
申请日：2008-12-22
申请人： Marc Zussy , Léa Di Cioccio , Christophe Morales , Hubert Moriceau
发明人： Marc Zussy , Léa Di Cioccio , Christophe Morales , Hubert Moriceau
IPC分类号： B23P11/00 , B23P19/00
CPC分类号： B28D5/0017 , H01L21/67092 , Y10T29/49815 , Y10T29/49821 , Y10T29/49822 , Y10T29/53274 , Y10T29/53683 , Y10T29/54
摘要： A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance.
摘要翻译：一种分离包括限定要分离的两个子结构的脆弱区域的结构的方法，其中至少一个平面叶片在对应于脆弱区域的中间平面的分离平面中前进到结构的入口边缘，方向为朝向结构的出口边缘前进，以便引起两个子结构的逐渐分离，并且其中分离平面中的叶片的倾斜相对于前进方向变化。

6. 发明申请

US20050048739A1 Multifunctional metallic bonding 有权
标题翻译：多功能金属接合
公开(公告)号：US20050048739A1
公开(公告)日：2005-03-03
申请号：US10744867
申请日：2003-12-22
申请人： Sebastien Kerdiles , Fabrice Letertre , Christophe Morales , Hubert Moriceau
发明人： Sebastien Kerdiles , Fabrice Letertre , Christophe Morales , Hubert Moriceau
IPC分类号： H01L21/762 , H01L33/00 , H01L21/00 , H01L21/30 , H01L21/301 , H01L21/46
CPC分类号： H01L21/02032 , H01L21/76254 , H01L21/76259 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by dint of non-destructive mechanical release.
摘要翻译：提供了用于在最终基板上制造半导体材料的转移层的方法。在一些实施方案中，通过在初始载体上形成半导体材料层，通过金属键合组装该层和最终的基底，并在初始载体与薄层的弱界面机械分离，在最终的基底上产生转移层，最初将层附加到初始支持。可以获得可用于制造诸如发光二极管或激光二极管的各种部件的中间基板。这些技术可以在最终的基底上产生转移层，并且可再循环的初始载体可以从转移层分离出来，以便通过非破坏性的机械释放进行再循环。

7. 发明授权

US09219004B2 Method of fabricating polymer film in the cavity of a wafer 有权
标题翻译：在晶片空腔中制造聚合物膜的方法
公开(公告)号：US09219004B2
公开(公告)日：2015-12-22
申请号：US13819993
申请日：2011-08-24
申请人： Hubert Moriceau , Maxime Argoud , Christophe Morales , Marc Zussy
发明人： Hubert Moriceau , Maxime Argoud , Christophe Morales , Marc Zussy
IPC分类号： H01L21/00 , H01L29/06 , H01L21/762 , H01L21/20 , H01L21/683 , H01L21/68
CPC分类号： H01L21/76251 , H01L21/2007 , H01L21/68 , H01L21/6835 , H01L21/762 , H01L21/76224
摘要： A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.
摘要翻译：一种用于获得由聚合物载体上的第一材料制成的膜的方法，所述方法包括将第一晶片接合到第二晶片，由此限定所述第一晶片和所述第二晶片之间的结合界面，所述第一和第二晶片中的至少一个第二晶片包括位于所述接合界面附近的所述第一材料层，在所述第一晶片中，挖空出空腔，所述空腔包括平行于所述结合界面的底部，所述底部在所述第一晶片中在在所述空腔中形成从其底部控制的厚度的聚合物层以获得组合的晶片部分，所述组合的晶片部分包括由所述底部上的所述聚合物层形成的底部区域和周边区域，并且在其厚度的主要部分上消除所述第二晶片，从而在所述聚合物层下方释放包含所述第一材料层的膜 ial

8. 发明授权

US08382933B2 Molecular bonding method with cleaning with hydrofluoric acid in vapor phase and rinsing with deionized water 失效
标题翻译：分子键合方法用氢氟酸在蒸气相中清洗并用去离子水冲洗
公开(公告)号：US08382933B2
公开(公告)日：2013-02-26
申请号：US12068638
申请日：2008-02-08
申请人： Frank Fournel , Hubert Moriceau , Christophe Morales , Pierre Perreau
发明人： Frank Fournel , Hubert Moriceau , Christophe Morales , Pierre Perreau
IPC分类号： B08B3/00 , B29C65/00 , B32B37/00 , B32B38/00
CPC分类号： H01L21/02049 , H01L21/187
摘要： Adhesion by molecular bonding of two free surfaces of first and second substrates, for example formed by monocrystalline silicon wafers, comprises at least successively: a cleaning step of the two free surfaces with hydrofluoric acid in vapor phase to make the two free surfaces hydrophobic, a rinsing step of said free surfaces with deionized water with a time less than or equal to 30 seconds a step of bringing said free surfaces into contact.
摘要翻译：通过例如由单晶硅晶片形成的第一和第二基板的两个自由表面的分子结合的粘附性至少包括：两个自由表面的清洁步骤，其中气相中的氢氟酸使两个自由表面疏水，用去离子水冲洗所述游离表面的时间小于或等于30秒，使所述自由表面接触的步骤。

9. 发明授权

US07781300B2 Method for producing mixed stacked structures, different insulating areas and/or localised vertical electrical conducting areas 有权
标题翻译：用于制造混合堆叠结构，不同绝缘区域和/或局部垂直导电区域的方法
公开(公告)号：US07781300B2
公开(公告)日：2010-08-24
申请号：US11576743
申请日：2005-10-06
申请人： Hubert Moriceau , Franck Fournel , Christophe Morales
发明人： Hubert Moriceau , Franck Fournel , Christophe Morales
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/76224
摘要： The invention relates to a method for producing a semiconducting structure including: controlled formation, through a mask (31), in a first substrate (30) in a semiconducting material, of at least one first area in an insulating material (36), up to the level of the lower surface (35) of the mask, before or during the removal of the mask.
摘要翻译：本发明涉及一种用于制造半导体结构的方法，包括：通过掩模（31）在绝缘材料（36）中的至少一个第一区域的半导体材料的第一衬底（30）中控制形成到达掩模的下表面（35）的水平面前，或在去除掩模期间。

10. 发明申请

US20090165277A1 METHOD AND DEVICE FOR SEPARATING A STRUCTURE 失效
标题翻译：分离结构的方法和装置
公开(公告)号：US20090165277A1
公开(公告)日：2009-07-02
申请号：US12341645
申请日：2008-12-22
申请人： Marc Zussy , Lea Di Cioccio , Christophe Morales , Hubert Moriceau
发明人： Marc Zussy , Lea Di Cioccio , Christophe Morales , Hubert Moriceau
IPC分类号： B23P19/00
CPC分类号： B28D5/0017 , H01L21/67092 , Y10T29/49815 , Y10T29/49821 , Y10T29/49822 , Y10T29/53274 , Y10T29/53683 , Y10T29/54
摘要： A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance.
摘要翻译：一种分离包括限定要分离的两个子结构的脆弱区域的结构的方法，其中至少一个平面叶片在对应于脆弱区域的中间平面的分离平面中前进到结构的入口边缘，方向为朝向结构的出口边缘前进，以便引起两个子结构的逐渐分离，并且其中分离平面中的叶片的倾斜相对于前进方向变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式