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1. 发明授权

US07651797B2 Electrochemical cells comprising laminar flow induced dynamic conducting interfaces, electronic devices comprising such cells, and methods employing same 失效
标题翻译：包括层流引导的动态导电界面的电化学电池，包含这种电池的电子器件，以及使用它们的方法
公开(公告)号：US07651797B2
公开(公告)日：2010-01-26
申请号：US11193005
申请日：2005-07-29
申请人： Larry J. Markoski , Jeffrey S. Moore , Joseph W. Lyding
发明人： Larry J. Markoski , Jeffrey S. Moore , Joseph W. Lyding
IPC分类号： H01M8/00 , H01M8/04 , H01M8/24 , H01M2/14
CPC分类号： H01M8/00 , H01M8/02 , H01M8/0258 , H01M8/04186 , H01M8/04194 , H01M8/04197 , H01M8/04276 , H01M8/08 , H01M8/1011 , H01M8/22 , H01M14/00 , H01M2250/30 , H01M2300/0005 , H01M2300/0025 , Y02B90/18 , Y02E60/523
摘要： An electrochemical cell is described that includes (a) a first electrode; (b) a second electrode; and (c) a channel contiguous with at least a portion of the first and the second electrodes. When a first liquid is contacted with the first electrode, a second liquid is contacted with the second electrode, and the first and the second liquids flow through the channel, a parallel laminar flow is established between the first and the second liquids. Electronic devices containing such electrochemical cells and methods for their use are also described.
摘要翻译：描述了一种电化学电池，其包括（a）第一电极; （b）第二电极; 和（c）与第一和第二电极的至少一部分邻接的通道。当第一液体与第一电极接触时，第二液体与第二电极接触，并且第一和第二液体流过通道，在第一和第二液体之间建立平行的层流。还描述了包含这种电化学电池的电子器件及其使用方法。

2. 发明授权

US06713206B2 Electrochemical cells comprising laminar flow induced dynamic conducting interfaces, electronic devices comprising such cells, and methods employing same 失效
标题翻译：包括层流引导的动态导电界面的电化学电池，包含这种电池的电子器件，以及使用它们的方法
公开(公告)号：US06713206B2
公开(公告)日：2004-03-30
申请号：US10053187
申请日：2002-01-14
申请人： Larry J. Markoski , Jeffrey S. Moore , Joseph W. Lyding
发明人： Larry J. Markoski , Jeffrey S. Moore , Joseph W. Lyding
IPC分类号： H01M214
CPC分类号： H01M8/22 , H01M8/02 , H01M8/0258 , H01M8/0271 , H01M8/04186 , H01M8/08 , H01M8/1011 , Y02E60/523
摘要： An electrochemical cell is described that includes (a) a first electrode; (b) a second electrode; and (c) a channel contiguous with at least a portion of the first and the second electrodes. When a first liquid is contacted with the first electrode, a second liquid is contacted with the second electrode, and the first and the second liquids flow through the channel, a parallel laminar flow is established between the first and the second liquids. Electronic devices containing such electrochemical cells and methods for their use are also described.
摘要翻译：描述了一种电化学电池，其包括（a）第一电极; （b）第二电极; 和（c）与第一和第二电极的至少一部分邻接的通道。当第一液体与第一电极接触时，第二液体与第二电极接触，并且第一和第二液体流过通道，在第一和第二液体之间建立平行的层流。还描述了包含这种电化学电池的电子器件及其使用方法。

3. 发明授权

US08283090B2 Electrochemical cells comprising laminar flow induced dynamic conducting interfaces, electronic devices comprising such cells, and methods employing same 有权
标题翻译：包括层流引导的动态导电界面的电化学电池，包含这种电池的电子器件，以及使用它们的方法
公开(公告)号：US08283090B2
公开(公告)日：2012-10-09
申请号：US11831894
申请日：2007-07-31
申请人： Larry J. Markoski , Jeffrey S. Moore , Joseph W. Lyding
发明人： Larry J. Markoski , Jeffrey S. Moore , Joseph W. Lyding
IPC分类号： H01M8/04
CPC分类号： H01M8/00 , H01M8/02 , H01M8/0258 , H01M8/04186 , H01M8/04194 , H01M8/04197 , H01M8/04276 , H01M8/08 , H01M8/1011 , H01M8/22 , H01M14/00 , H01M2250/30 , H01M2300/0005 , H01M2300/0025 , Y02B90/18 , Y02E60/523
摘要： An electrochemical cell is described that includes (a) a first electrode; (b) a second electrode; and (c) a channel contiguous with at least a portion of the first and the second electrodes. When a first liquid is contacted with the first electrode, a second liquid is contacted with the second electrode, and the first and the second liquids flow through the channel, a parallel laminar flow is established between the first and the second liquids. Electronic devices containing such electrochemical cells and methods for their use are also described.
摘要翻译：描述了一种电化学电池，其包括（a）第一电极; （b）第二电极; 和（c）与第一和第二电极的至少一部分邻接的通道。当第一液体与第一电极接触时，第二液体与第二电极接触，并且第一和第二液体流过通道，在第一和第二液体之间建立平行的层流。还描述了包含这种电化学电池的电子器件及其使用方法。

4. 发明授权

US08070920B2 Nanometer-scale sharpening of conductor tips 有权
标题翻译：导体尖端的纳米级锐化
公开(公告)号：US08070920B2
公开(公告)日：2011-12-06
申请号：US11740678
申请日：2007-04-26
申请人： Joseph W. Lyding , Scott W. Schmucker
发明人： Joseph W. Lyding , Scott W. Schmucker
IPC分类号： C23C14/34
CPC分类号： G01Q70/16 , C23F4/00
摘要： The invention provides methods for sharpening the tip of an electrical conductor. The methods of the invention are capable of producing tips with an apex radius of curvature less than 2 nm. The methods of the invention are based on simultaneous direction of ionized atoms towards the apex of a previously sharpened conducting tip and application of an electric potential difference to the tip. The sign of the charge on the ions is the same as the sign of the electric potential. The methods of the invention can be used to sharpen metal wires, metal wires tipped with conductive coatings, multi-walled carbon nanotubes, semiconducting nanowires, and semiconductors in other forms.
摘要翻译：本发明提供了用于磨削电导体尖端的方法。本发明的方法能够产生顶点曲率小于2nm的尖端。本发明的方法是基于离子化原子朝向先前锐化的导电尖端的顶点的同时方向，以及向尖端施加电势差。离子上的电荷的符号与电位的符号相同。本发明的方法可用于锐化金属线，金属导线尖端与导电涂层，多壁碳纳米管，半导体纳米线和其他形式的半导体。

5. 发明申请

US20080105539A1 NANOMETER-SCALE SHARPENING OF CONDUCTOR TIPS 有权
标题翻译：导体提示的NANOMETER-SCALE SHARPENING
公开(公告)号：US20080105539A1
公开(公告)日：2008-05-08
申请号：US11740678
申请日：2007-04-26
申请人： Joseph W. Lyding , Scott W. Schmucker
发明人： Joseph W. Lyding , Scott W. Schmucker
IPC分类号： C23C14/46
CPC分类号： G01Q70/16 , C23F4/00
摘要： The invention provides methods for sharpening the tip of an electrical conductor. The methods of the invention are capable of producing tips with an apex radius of curvature less than 2 nm. The methods of the invention are based on simultaneous direction of ionized atoms towards the apex of a previously sharpened conducting tip and application of an electric potential difference to the tip. The sign of the charge on the ions is the same as the sign of the electric potential. The methods of the invention can be used to sharpen metal wires, metal wires tipped with conductive coatings, multi-walled carbon nanotubes, semiconducting nanowires, and semiconductors in other forms.
摘要翻译：本发明提供了用于磨削电导体尖端的方法。本发明的方法能够产生顶点曲率小于2nm的尖端。本发明的方法是基于离子化原子朝向先前锐化的导电尖端的顶点的同时方向，以及向尖端施加电势差。离子上的电荷的符号与电位的符号相同。本发明的方法可用于锐化金属线，金属导线尖端与导电涂层，多壁碳纳米管，半导体纳米线和其他形式的半导体。

6. 发明授权

US08819861B2 Nanometer-scale sharpening of conductor tips 有权
标题翻译：导体尖端的纳米级锐化
公开(公告)号：US08819861B2
公开(公告)日：2014-08-26
申请号：US13292714
申请日：2011-11-09
申请人： Joseph W. Lyding , Scott W. Schmucker
发明人： Joseph W. Lyding , Scott W. Schmucker
IPC分类号： G01Q70/16
CPC分类号： G01Q70/16 , C23F4/00
摘要： The invention provides methods for sharpening the tip of an electrical conductor. The methods of the invention are capable of producing tips with an apex radius of curvature less than 2 nm. The methods of the invention are based on simultaneous direction of ionized atoms towards the apex of a previously sharpened conducting tip and application of an electric potential difference to the tip. The sign of the charge on the ions is the same as the sign of the electric potential. The methods of the invention can be used to sharpen metal wires, metal wires tipped with conductive coatings, multi-walled carbon nanotubes, semiconducting nanowires and semiconductors in other forms.
摘要翻译：本发明提供了用于磨削电导体尖端的方法。本发明的方法能够产生顶点曲率小于2nm的尖端。本发明的方法是基于离子化原子朝向先前锐化的导电尖端的顶点的同时方向，以及向尖端施加电势差。离子上的电荷的符号与电位的符号相同。本发明的方法可用于锐化金属丝，金属丝，其具有导电涂层，多壁碳纳米管，半导体纳米线和其他形式的半导体。

7. 发明授权

US6147014A Forming of deuterium containing nitride spacers and fabrication of semiconductor devices 失效
标题翻译：含氘氮化物间隔物的形成和半导体器件的制造
公开(公告)号：US6147014A
公开(公告)日：2000-11-14
申请号：US20565
申请日：1998-01-16
申请人： Joseph W. Lyding , Karl Hess
发明人： Joseph W. Lyding , Karl Hess
IPC分类号： H01L29/78 , H01L21/28 , H01L21/30 , H01L21/324 , H01L29/51 , H01L21/00
CPC分类号： H01L21/28176 , H01L21/28202 , H01L21/3003 , H01L21/324 , H01L29/513 , H01L29/518 , H01L21/28194 , H01L29/517 , Y10S438/91 , Y10S438/974
摘要： Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
摘要翻译：描述了用于调节具有氘的半导体器件以改善操作特性并减少在器件操作过程中发生的去钝化的优选方法。还描述了可以通过这些方法制备的半导体器件。

8. 发明授权

US5872387A Deuterium-treated semiconductor devices 失效
标题翻译：氘处理半导体器件
公开(公告)号：US5872387A
公开(公告)日：1999-02-16
申请号：US586411
申请日：1996-01-16
申请人： Joseph W. Lyding , Karl Hess
发明人： Joseph W. Lyding , Karl Hess
IPC分类号： H01L29/78 , H01L21/28 , H01L21/30 , H01L21/324 , H01L29/51 , H01L29/76
CPC分类号： H01L21/28176 , H01L21/28202 , H01L21/3003 , H01L21/324 , H01L29/513 , H01L29/518 , H01L21/28194 , H01L29/517 , Y10S438/91 , Y10S438/974
摘要： Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
摘要翻译：描述了用于调节具有氘的半导体器件以改善操作特性并减少在器件操作过程中发生的去钝化的优选方法。还描述了可以通过这些方法制备的半导体器件。

9. 发明申请

US20140166545A1 ASYMMETRIC MAGNETIC FIELD NANOSTRUCTURE SEPARATION METHOD, DEVICE AND SYSTEM 审中-公开
标题翻译：非对称磁场纳米结构分离方法，器件和系统
公开(公告)号：US20140166545A1
公开(公告)日：2014-06-19
申请号：US14004364
申请日：2012-03-16
申请人： Joseph W. Lyding , Charishma Puliyanda Subbaiah , Joshua D. Wood
发明人： Joseph W. Lyding , Charishma Puliyanda Subbaiah , Joshua D. Wood
IPC分类号： B03C1/023
CPC分类号： B03C1/023 , B01J19/12 , B03C1/0335 , B03C1/288 , B03C2201/18
摘要： A preferred method of the invention separates metallic or charged nanostructures in solution. In preferred embodiments, metal and semiconducting nanostructures are separated in solution with use of a net Lorentz force applied to metallic or conductive nanostructures. In other embodiments, charged nanostructures are separated from other nanostructures in solution. The charge can be applied to semiconducting or insulating nanostructures of a predetermined size by application of appropriate radiation. The method is conducted on dispersed nanostructures suspended in solution in a vessel. The net Lorentz force to metallic, conductive or charged nanostructures within the solution moves the metallic, conductive or charged nanostructures toward a common volume in a portion of the vessel. Extraction of the common volume provides solution with a high ratio of the metallic, conductive or charged nanostructures. The solution left behind has a high ratio of semiconducting or insulating nanostructures. That solution can also be recovered.
摘要翻译：本发明优选的方法在溶液中分离金属或带电的纳米结构。在优选的实施方案中，使用施加到金属或导电纳米结构的净洛伦兹力，在溶液中分离金属和半导体纳米结构。在其它实施方案中，电荷纳米结构与溶液中的其它纳米结构物分离。可以通过施加适当的辐射将电荷施加到预定尺寸的半导体或绝缘纳米结构。该方法在悬浮在容器中的溶液中的分散的纳米结构上进行。在溶液内的金属，导电或带电的纳米结构的净洛伦兹力将金属，导电或带电的纳米结构朝着容器的一部分中的共同体积移动。共同体积的提取提供具有高比例的金属，导电或带电的纳米结构的溶液。留下的解决方案具有高比例的半导体或绝缘纳米结构。该解决方案也可以恢复。

10. 发明授权

US06888204B1 Semiconductor devices, and methods for same 失效
标题翻译：半导体器件及其方法相同
公开(公告)号：US06888204B1
公开(公告)日：2005-05-03
申请号：US09160657
申请日：1998-09-25
申请人： Joseph W. Lyding , Karl Hess
发明人： Joseph W. Lyding , Karl Hess
IPC分类号： H01L21/28 , H01L21/30 , H01L21/324 , H01L29/51 , H01L29/76 , H01L31/113
CPC分类号： H01L21/28202 , H01L21/28176 , H01L21/28194 , H01L21/3003 , H01L21/324 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
摘要翻译：描述了用于调节具有氘的半导体器件以改善操作特性并减少在器件操作过程中发生的去钝化的优选方法。还描述了可以通过这些方法制备的半导体器件。

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