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1. 发明申请

US20090050143A1 MEDICINAL FORMULATION CONTAINER WITH A TREATED METAL SURFACE 审中-公开
标题翻译：具有处理金属表面的药物制剂容器
公开(公告)号：US20090050143A1
公开(公告)日：2009-02-26
申请号：US12293216
申请日：2007-03-23
申请人： Larry D. Boardman , Peter R. Johnson , Gary A. Korba , Mark E. Mueller , Mark J. Pellerite , Ravi Ravichandran
发明人： Larry D. Boardman , Peter R. Johnson , Gary A. Korba , Mark E. Mueller , Mark J. Pellerite , Ravi Ravichandran
IPC分类号： A61M15/00 , C23C22/05
CPC分类号： A61M15/009 , A61M2205/0222 , B65D83/54 , B82Y30/00 , C23C22/03 , C23C30/00
摘要： A container, such as a metered dose inhaler, suitable for use with a propellant-based medicinal formulation, the container comprising one or more treated metal surfaces that come into contact with the medicinal formulation, wherein the one or more treated metal surfaces are characterized by an organic surface treatment compound covalently bonded to the metal surface through a reactive head group selected from either phosphonic acid or carboxylic acid and wherein the organic surface treatment compound is further characterized by an exposed, substantially non-reactive tail group disposed away from the metal surface. Also, metered dose inhaler canisters and valves with treated surfaces.
摘要翻译：一种容器，例如计量吸入器，适用于基于推进剂的药物制剂，所述容器包括与药物制剂接触的一种或多种经处理的金属表面，其中所述一种或多种经处理的金属表面的特征在于通过选自膦酸或羧酸的反应性头基团共价结合到金属表面的有机表面处理化合物，其中有机表面处理化合物的进一步特征在于远离金属表面放置的暴露的，基本上不反应的尾基。此外，计量吸入器罐和具有处理表面的阀。

2. 发明授权

US06768132B2 Surface modified organic thin film transistors 失效
标题翻译：表面改性有机薄膜晶体管
公开(公告)号：US06768132B2
公开(公告)日：2004-07-27
申请号：US10094007
申请日：2002-03-07
申请人： Terrance P. Smith , Mark J. Pellerite , Tommie W. Kelley , Dawn V. Muyres , Dennis E. Vogel , Kim M. Vogel , Larry D. Boardman , Timothy D. Dunbar
发明人： Terrance P. Smith , Mark J. Pellerite , Tommie W. Kelley , Dawn V. Muyres , Dennis E. Vogel , Kim M. Vogel , Larry D. Boardman , Timothy D. Dunbar
IPC分类号： H01L5100
CPC分类号： H01L51/0529 , B82Y10/00 , B82Y30/00 , H01B3/18 , H01L51/0003 , H01L51/0055 , H01L51/0516 , H01L51/0545 , Y10S428/901
摘要： An organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors.
摘要翻译：一种有机薄膜晶体管，其包括插入在栅极电介质和有机半导体层之间的自组装单层。单层是栅极电介质和自组装单层的前体之间的反应的产物。半导体层包括选自被至少一个给电子基团，卤素原子或其组合取代的苯的材料，或任选被至少一个电子所取代的苯并环戊烯化的乙烯或聚苯并环戊烯的乙烯 - 卤素原子或其组合。制造薄膜晶体管的方法和包括薄膜晶体管的集成电路。

3. 发明授权

US06617609B2 Organic thin film transistor with siloxane polymer interface 失效
标题翻译：有机薄膜晶体管与硅氧烷聚合物界面
公开(公告)号：US06617609B2
公开(公告)日：2003-09-09
申请号：US10012655
申请日：2001-11-05
申请人： Tommie W. Kelley , Larry D. Boardman , Timothy D. Dunbar , Todd D. Jones , Dawn V. Muyres , Mark J. Pellerite , Terrance P. Smith
发明人： Tommie W. Kelley , Larry D. Boardman , Timothy D. Dunbar , Todd D. Jones , Dawn V. Muyres , Mark J. Pellerite , Terrance P. Smith
IPC分类号： H01L5100
CPC分类号： H01L21/02126 , H01L21/3122 , H01L21/31691 , H01L51/001 , H01L51/0052 , H01L51/052 , H01L51/0533 , H01L51/0541 , H01L51/0545
摘要： Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.
摘要翻译：提供了一种有机薄膜晶体管，其包含介于栅极电介质和有机半导体层之间的硅氧烷聚合物层。还提供了包括薄膜晶体管的集成电路和制造薄膜晶体管的方法。本发明的有机薄膜晶体管通常表现出一个或多个晶体管特性的改进。

4. 发明授权

US06433359B1 Surface modifying layers for organic thin film transistors 有权
标题翻译：有机薄膜晶体管的表面改性层
公开(公告)号：US06433359B1
公开(公告)日：2002-08-13
申请号：US09947845
申请日：2001-09-06
申请人： Tommie W. Kelley , Dawn V. Muyres , Mark J. Pellerite , Timothy D. Dunbar , Larry D. Boardman , Terrance P. Smith
发明人： Tommie W. Kelley , Dawn V. Muyres , Mark J. Pellerite , Timothy D. Dunbar , Larry D. Boardman , Terrance P. Smith
IPC分类号： H01L3524
CPC分类号： H01L51/0512 , B82Y10/00 , B82Y30/00 , H01L21/31691 , H01L51/0037 , H01L51/0052 , H01L51/0516 , H01L51/0545
摘要： Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The monolayer precursor composition has the formula: X—Y—Zn, wherein X is H or CH3; Y is a linear or branched C5-C50 aliphatic or cyclic aliphatic connecting group, or C8-C50 group comprising an aromatic group and a C3-C44 aliphatic or cyclic aliphatic connecting group; Z is selected from from —PO3H2, —OPO3H2, benzotriazolyl (—C6H4N3), carbonyloxybenzotriazole (—OC(═O)C6H4N3), oxybenzotriazole (—O—C6H4N3), aminobenzotriazole (—NH—C6H4N3), —CONHOH, —COOH, —OH, —SH, —COSH, —COSeH, —C5H4N, —SeH, —SO3H, —NC, —SiCl(CH3)2, —SiCl2CH3, amino, and phosphinyl; and n is 1, 2, or 3 provided that n=1 when Z is —SiCl(CH3)2 or —SiCl2CH3. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors are also provided.
摘要翻译：提供了一种有机薄膜晶体管，其包括介于栅极电介质和有机半导体层之间的自组装单层。单层是栅极电介质和自组装单层的前体之间的反应的产物。单层前体组合物具有下式：X-Y-Zn，其中X是H或CH 3; Y是直链或支链C 5 -C 50脂族或环状脂族连接基团或包含芳族基团和C 3 -C 44脂族或环状脂族连接基团的C 8 -C 50基团; Z选自-PO 3 H 2，-OPO 3 H 2，苯并三唑基（-C 6 H 4 N 3），羰氧基苯并三唑（-OC（= O）C 6 H 4 N 3），氧苯并三唑（-O-C 6 H 4 N 3），氨基苯并三唑（-NH-C 6 H 4 N 3），-CONHOH，-COOH， -OH，-SH，-COSH，-COSeH，-C5H4N，-SeH，-SO3H，-NC，-SiCl（CH3）2，-SiCl2CH3，氨基和氧膦基; 并且n为1,2或3，条件是当Z为-SiCl（CH 3）2或-SiCl 2 CH 3时n = 1。还提供了制造薄膜晶体管的方法和包括薄膜晶体管的集成电路。

5. 发明授权

US07352038B2 Organic thin film transistor with polymeric interface 失效
标题翻译：具有聚合物界面的有机薄膜晶体管
公开(公告)号：US07352038B2
公开(公告)日：2008-04-01
申请号：US11227547
申请日：2005-09-15
申请人： Tommie W. Kelley , Larry D. Boardman , Timothy D. Dunbar , Todd D. Jones , Dawn V. Muyres , Mark J. Pellerite , Terrance P. Smith
发明人： Tommie W. Kelley , Larry D. Boardman , Timothy D. Dunbar , Todd D. Jones , Dawn V. Muyres , Mark J. Pellerite , Terrance P. Smith
IPC分类号： H01L29/94
CPC分类号： H01L51/0541 , H01L21/02118 , H01L21/02126 , H01L21/312 , H01L21/3121 , H01L51/0052 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.
摘要翻译：提供了一种有机薄膜晶体管，其包括介于栅极电介质和有机半导体层之间的聚合物层。教导了各种均聚物，共聚物和功能性共聚物用于聚合物层。还提供了包括多个薄膜晶体管的集成电路和制造薄膜晶体管的方法。本发明的有机薄膜晶体管通常表现出一个或多个晶体管特性的改进。

6. 发明授权

US07352000B2 Organic thin film transistor with polymeric interface 失效
公开(公告)号：US07352000B2
公开(公告)日：2008-04-01
申请号：US11227501
申请日：2005-09-15
申请人： Tommie W. Kelley , Larry D. Boardman , Timothy D. Dunbar , Todd D. Jones , Dawn V. Muyres , Mark J. Pellerite , Terrance P. Smith
发明人： Tommie W. Kelley , Larry D. Boardman , Timothy D. Dunbar , Todd D. Jones , Dawn V. Muyres , Mark J. Pellerite , Terrance P. Smith
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0541 , H01L21/02118 , H01L21/02126 , H01L21/312 , H01L21/3121 , H01L51/0052 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

7. 发明授权

US06946676B2 Organic thin film transistor with polymeric interface 失效
标题翻译：具有聚合物界面的有机薄膜晶体管
公开(公告)号：US06946676B2
公开(公告)日：2005-09-20
申请号：US10012654
申请日：2001-11-05
申请人： Tommie W. Kelley , Larry D. Boardman , Timothy D. Dunbar , Todd D. Jones , Dawn V. Muyres , Mark J. Pellerite , Terrance P. Smith
发明人： Tommie W. Kelley , Larry D. Boardman , Timothy D. Dunbar , Todd D. Jones , Dawn V. Muyres , Mark J. Pellerite , Terrance P. Smith
IPC分类号： H01L51/05 , H01L21/312 , H01L29/78 , H01L29/786 , H01L51/00 , H01L51/10 , H01L51/30
CPC分类号： H01L51/0541 , H01L21/02118 , H01L21/02126 , H01L21/312 , H01L21/3121 , H01L51/0052 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.
摘要翻译：提供了一种有机薄膜晶体管，其包括插入在栅极电介质和有机半导体层之间的聚合物层。教导了各种均聚物，共聚物和功能性共聚物用于聚合物层。还提供了包括多个薄膜晶体管的集成电路和制造薄膜晶体管的方法。本发明的有机薄膜晶体管通常表现出一个或多个晶体管特性的改进。

8. 发明授权

US06841079B2 Fluorochemical treatment for silicon articles 有权
标题翻译：硅制品的氟化学处理
公开(公告)号：US06841079B2
公开(公告)日：2005-01-11
申请号：US10160738
申请日：2002-05-31
申请人： Timothy D. Dunbar , Lawrence A. Zazzera , Mark J. Pellerite , Larry D. Boardman , George G. Moore , Miguel A. Guerra , Cheryl L. Elsbernd
发明人： Timothy D. Dunbar , Lawrence A. Zazzera , Mark J. Pellerite , Larry D. Boardman , George G. Moore , Miguel A. Guerra , Cheryl L. Elsbernd
IPC分类号： B81C1/00 , B81B3/00
CPC分类号： B81C1/0096 , B81B3/0005 , B82Y30/00
摘要： Silicon substrates having Si—H bonds are chemically modified using a fluorinated olefin having the formula: wherein m is an integer greater than or equal to 1; n is an integer greater than or equal to 0; Z is a divalent linking group; and Rf is a highly fluorinated organic group.
摘要翻译：具有Si-H键的硅衬底使用具有下式的氟化烯烃进行化学改性：其中m是大于或等于1的整数; n是大于或等于0的整数; Z是二价连接基团; Rf是高度氟化的有机基团。

9. 发明授权

US06824882B2 Fluorinated phosphonic acids 失效
标题翻译：氟化膦酸
公开(公告)号：US06824882B2
公开(公告)日：2004-11-30
申请号：US10161258
申请日：2002-05-31
申请人： Larry D. Boardman , Mark J. Pellerite
发明人： Larry D. Boardman , Mark J. Pellerite
IPC分类号： B32B1504
CPC分类号： B82Y30/00 , B82Y40/00 , C07F9/3808 , C10M105/74 , C10M2223/06 , C10M2223/061 , C10N2230/06 , C10N2250/121 , C10N2260/08 , Y10T428/3154 , Y10T428/31678
摘要： Fluorinated phosphonic acid compounds, useful as treatments for substrate surfaces, have the formula: wherein: R1 is a straight chain alkylene group having from about 3 to about 21 carbon atoms, an oxa-substituted straight chain alkylene group having from about 2 to about 20 carbon atoms, or a thia-substituted straight chain alkylene group having from about 2 to about 20 carbon atoms; R2 is a perfluoroalkyl group having from about 4 to about 10 carbon atoms; R3 is hydrogen, an alkali metal cation, or an alkyl group having from about 1 to about 6 carbon atoms; and M is hydrogen or an alkali metal cation, with the proviso that if R1 is an unsubstituted straight chain alkylene group, then the sum of carbon atoms in R1 and R2 combined is at least 10.
摘要翻译：可用作底物表面处理的氟化膦酸化合物具有下式：其中：R 1是具有约3至约21个碳原子的直链亚烷基，具有约2个碳原子的氧杂取代的直链亚烷基至约20个碳原子，或具有约2至约20个碳原子的硫杂取代的直链亚烷基; R 2为具有约4至约10个碳原子的全氟烷基; R 3为氢，碱金属阳离子或具有约1至约6个碳原子的烷基; 并且M是氢或碱金属阳离子，条件是如果R 1是未取代的直链亚烷基，则R 1和R 2中的碳原子的总和为至少10。

10. 发明授权

US09835913B2 Transparent electrode for electronic displays 有权
公开(公告)号：US09835913B2
公开(公告)日：2017-12-05
申请号：US13983593
申请日：2012-04-03
申请人： Mark J. Pellerite , Marc D. Radcliffe , John P. Baetzold , Marie A. Boulos , Michael L. Steiner , John J. Stradinger
发明人： Mark J. Pellerite , Marc D. Radcliffe , John P. Baetzold , Marie A. Boulos , Michael L. Steiner , John J. Stradinger
IPC分类号： G02F1/1333 , G02F1/1343 , B82Y10/00 , H05B33/28
CPC分类号： G02F1/13439 , B82Y10/00 , G02F1/133345 , G02F1/133365 , G02F2202/36 , H01L2924/00 , H01L2924/0002 , H05B33/28
摘要： A transparent electrode is described and includes metallic nanowires and a polymeric overcoat layer for protecting the nanowires from corrosion and abrasion. The polymeric overcoat layer includes nanoparticles selected from the group consisting of antimony tin oxide, zinc oxide and indium tin oxide, and has a sheet resistance of greater than about 107 ohm/sq. The transparent electrode can be used in electronic displays such as polymer-dispersed liquid crystal, liquid crystal, electrophoretic, electrochromic, thermochromic, electroluminescent and plasma displays.

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