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1. 发明授权

US09093483B2 Showerhead electrode assembly with gas flow modification for extended electrode life 有权
标题翻译：喷头电极组件，具有气流改性，延长电极寿命
公开(公告)号：US09093483B2
公开(公告)日：2015-07-28
申请号：US14198211
申请日：2014-03-05
申请人： Lam Research Corporation
发明人： Jason Augustino , Anthony de la Llera , Allan K. Ronne , Jaehyun Kim , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/67 , C23C16/455 , H01J37/32
CPC分类号： H01L21/67069 , C23C16/45565 , C23C16/45582 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01L21/67017
摘要： A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.
摘要翻译：提供了一种用于等离子体处理装置的喷头电极组件。喷头电极组件包括附接到第二构件的第一构件。第一和第二构件具有流体连通的第一和第二气体通道。当处理气体流过气体通道时，跨越第一和第二气体通道产生总压降。跨越第二气体通道的总压降的一小部分大于跨越第一气体通道的总压降的一部分。

2. 发明授权

US09234775B2 Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber 有权
标题翻译：用于验证从气体供应系统到等离子体处理室的气体流速的方法
公开(公告)号：US09234775B2
公开(公告)日：2016-01-12
申请号：US14045412
申请日：2013-10-03
申请人： Lam Research Corporation
发明人： Dean J. Larson , Robert C. Hefty , James V. Tietz , William S. Kennedy , Eric H. Lenz , William M. Denty, Jr. , Enrico Magni
IPC分类号： G01L1/00 , G01F1/42 , G01F1/36 , G01F25/00 , G05D7/06
CPC分类号： G01F1/42 , G01F1/36 , G01F25/0007 , G05D7/0652
摘要： Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations. Gas supply systems are also disclosed.
摘要翻译：提供了在向等离子体处理室供应气体的气体供给系统中测量气体流量的方法。在差分流动方法中，流量控制器以不同的设定流量运行，并且在环境条件下测量设定流量的上游孔口压力。测量的孔口压力参考二次流量验证方法，该方法为不同的设定流量产生相应的实际气体流速。上游孔压力可以用作在室的任何温度条件下进行的随后的孔口压力测量的差分比较。在绝对流动方法中，预定了所选择的气体和孔口的一些参数，并且在气体以流量控制器以设定流量通过孔口流动时，测量气体的其它参数。在该方法中，任何流量控制器设定点可以在任何时间和任何室条件下流动，例如在等离子体处理操作期间。还公开了供气系统。

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