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1. 发明授权

US11127567B2 Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity 有权
公开(公告)号：US11127567B2
公开(公告)日：2021-09-21
申请号：US16866065
申请日：2020-05-04
申请人： LAM RESEARCH CORPORATION
发明人： Hu Kang , Adrien LaVoie , Shankar Swaminathan , Jun Qian , Chloe Baldasseroni , Frank Pasquale , Andrew Duvall , Ted Minshall , Jennifer Petraglia , Karl Leeser , David Smith , Sesha Varadarajan , Edward Augustyniak , Douglas Keil
IPC分类号： C23C16/50 , H01J37/32 , C23C16/505 , C23C16/455 , C23C16/40 , C23C16/34 , C23C16/509
摘要： A substrate processing system includes: a processing chamber defining a reaction volume; a showerhead including: a stem portion having one end connected adjacent to an upper surface of the processing chamber; and a base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion, where the showerhead is configured to introduce gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber. The collar includes one or more holes to supply purge gas from an inner cavity of the collar to between the base portion of the showerhead and the upper surface of the processing chamber.

2. 发明申请

US20170260627A1 PLASMA SUPPRESSION BEHIND A SHOWERHEAD THROUGH THE USE OF INCREASED PRESSURE 有权
公开(公告)号：US20170260627A1
公开(公告)日：2017-09-14
申请号：US15066550
申请日：2016-03-10
申请人： Lam Research Corporation
发明人： Patrick Girard Breiling , Ramesh Chandrasekharan , Edmund Minshall , Colin Smith , Andrew Duvall , Karl Leeser
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： C23C16/4408 , C23C16/45536 , C23C16/45565
摘要： A substrate processing system includes a showerhead including a stem portion and a head portion. The stem portion is in fluid communication with a process gas source, and the head portion is arranged to provide process gases from the process gas source to a reaction volume of a processing chamber below the showerhead to generate plasma in the reaction volume. A suppressor is arranged above the head portion of the showerhead, extends from the stem portion toward sidewalls of the processing chamber, and is sealed against the sidewalls of the processing chamber or sealed against an enclosure surrounding the suppressor. The suppressor, the sidewalls, and a top surface of the processing chamber, the suppressor and the enclosure, or the suppressor, the enclosure, and the top surface define a partitioned volume of the processing chamber above the showerhead. The partitioned volume is in fluid communication with a purge gas source.

3. 发明申请

US20200227304A1 PLANAR SUBSTRATE EDGE CONTACT WITH OPEN VOLUME EQUALIZATION PATHWAYS AND SIDE CONTAINMENT 审中-公开
公开(公告)号：US20200227304A1
公开(公告)日：2020-07-16
申请号：US16836062
申请日：2020-03-31
申请人： Lam Research Corporation
发明人： Patrick Breiling , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , Ishtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32
摘要： A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

4. 发明申请

US20200219757A1 INTEGRATED SHOWERHEAD WITH THERMAL CONTROL FOR DELIVERING RADICAL AND PRECURSOR GAS TO A DOWNSTREAM CHAMBER TO ENABLE REMOTE PLASMA FILM DEPOSITION 审中-公开
公开(公告)号：US20200219757A1
公开(公告)日：2020-07-09
申请号：US16820003
申请日：2020-03-16
申请人： Lam Research Corporation
发明人： Patrick BREILING , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , lshtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32
摘要： A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

5. 发明授权

US09428833B1 Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal 有权
标题翻译：用于通过控制晶片支撑来实现边缘密封的背面沉积减少的方法和装置
公开(公告)号：US09428833B1
公开(公告)日：2016-08-30
申请号：US14726055
申请日：2015-05-29
申请人： Lam Research Corporation
发明人： Andrew Duvall , Chloe Baldasseroni
IPC分类号： H01L21/31 , C23C16/455 , C23C16/52 , C23C16/458 , H01L21/02 , H01L21/285 , H01L21/67
CPC分类号： H01L21/67 , C23C16/4409 , C23C16/4584 , C23C16/4585 , C23C16/4586 , H01J37/32449 , H01J37/32513 , H01J37/32715 , H01J37/32853 , H01L21/68735 , H01L21/6875 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： Method and apparatus for reducing backside deposition by controlling one or more wafer supports are disclosed. A processing chamber, such as a processing chamber for atomic layer deposition, can include a pedestal and one or more wafer supports configured to extend from the pedestal. A wafer can be provided over the pedestal, the one or more wafer supports can contact the backside of the wafer to support the wafer, and the one or more wafer supports can be positioned to a height to cause an outer edge of the wafer to sag. The outer edge of the wafer can sag to substantially contact the pedestal or a carrier ring surrounding the pedestal. This can create an edge seal to limit access by process gases to the backside of the wafer during a deposition process.
摘要翻译：公开了通过控制一个或多个晶片支撑件来减少背面沉积的方法和装置。诸如用于原子层沉积的处理室的处理室可以包括基座和被配置为从基座延伸的一个或多个晶片支撑件。晶片可以设置在基座上方，一个或多个晶片支撑件可以接触晶片的背面以支撑晶片，并且一个或多个晶片支撑件可以被定位到一定高度，以使晶片的外边缘下垂。晶片的外边缘可以下垂以基本上接触基座或围绕基座的承载环。这可以产生边缘密封，以在沉积过程中限制通过工艺气体进入晶片背面的边缘。

6. 发明申请

US20180068833A1 SYSTEMS AND METHODS FOR SUPPRESSING PARASITIC PLASMA AND REDUCING WITHIN-WAFER NON-UNIFORMITY 审中-公开
公开(公告)号：US20180068833A1
公开(公告)日：2018-03-08
申请号：US15703213
申请日：2017-09-13
申请人： LAM RESEARCH CORPORATION
发明人： Hu Kang , Adrien LaVoie , Shankar Swaminathan , Jun Qian , Chloe Baldasseroni , Frank Pasquale , Andrew Duvall , Ted Minshall , Jennifer Petraglia , Karl Leeser , David Smith , Sesha Varadarajan , Edward Augustyniak , Douglas Keil
IPC分类号： H01J37/32 , C23C16/509 , C23C16/34 , C23C16/455 , C23C16/40 , C23C16/505
摘要： A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.

7. 发明授权

US09758868B1 Plasma suppression behind a showerhead through the use of increased pressure 有权
公开(公告)号：US09758868B1
公开(公告)日：2017-09-12
申请号：US15066550
申请日：2016-03-10
申请人： Lam Research Corporation
发明人： Patrick Girard Breiling , Ramesh Chandrasekharan , Edmund Minshall , Colin Smith , Andrew Duvall , Karl Leeser
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： C23C16/4408 , C23C16/45536 , C23C16/45565
摘要： A substrate processing system includes a showerhead including a stem portion and a head portion. The stem portion is in fluid communication with a process gas source, and the head portion is arranged to provide process gases from the process gas source to a reaction volume of a processing chamber below the showerhead to generate plasma in the reaction volume. A suppressor is arranged above the head portion of the showerhead, extends from the stem portion toward sidewalls of the processing chamber, and is sealed against the sidewalls of the processing chamber or sealed against an enclosure surrounding the suppressor. The suppressor, the sidewalls, and a top surface of the processing chamber, the suppressor and the enclosure, or the suppressor, the enclosure, and the top surface define a partitioned volume of the processing chamber above the showerhead. The partitioned volume is in fluid communication with a purge gas source.

8. 发明申请

US20160079036A1 Systems and Methods for Suppressing Parasitic Plasma and Reducing Within-Wafer Non-Uniformity 有权
标题翻译：抑制寄生等离子体和减少晶片内非均匀性的系统和方法
公开(公告)号：US20160079036A1
公开(公告)日：2016-03-17
申请号：US14668174
申请日：2015-03-25
申请人： LAM RESEARCH CORPORATION
发明人： Hu Kang , Adrien LaVoie , Shankar Swaminathan , Jun Qian , Chloe Baldasseroni , Frank Pasquale , Andrew Duvall , Ted Minshall , Jennifer Petraglia , Karl Leeser , David Smith , Sesha Varadarajan , Edward Augustyniak , Douglas Keil
IPC分类号： H01J37/32 , C23C16/34 , C23C16/40 , C23C16/505 , C23C16/455
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/402 , C23C16/405 , C23C16/45565 , C23C16/505 , C23C16/509 , H01J37/32568 , H01J37/32623
摘要： A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.
摘要翻译：用于在衬底上沉积膜的衬底处理系统包括限定反应体积的处理室。喷头包括杆部，其一端连接在处理室的上表面上。基部连接到杆部的相对端并且从杆部径向向外延伸。淋浴头构造成将至少一种工艺气体和吹扫气体引入反应体积。等离子体发生器被配置为在反应体积中选择性地产生RF等离子体。边缘调整系统包括套环和寄生等离子体还原元件，该元件位于套环与喷头的上表面之间的茎部周围。寄生等离子体还原元件被配置为减少喷头和处理室的上表面之间的寄生等离子体。

9. 发明申请

US20180122685A1 PLANAR SUBSTRATE EDGE CONTACT WITH OPEN VOLUME EQUALIZATION PATHWAYS AND SIDE CONTAINMENT 审中-公开
公开(公告)号：US20180122685A1
公开(公告)日：2018-05-03
申请号：US15431088
申请日：2017-02-13
申请人： Lam Research Corporation
发明人： Patrick Breiling , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , lshtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32
CPC分类号： H01L21/68785 , H01J37/32082 , H01J37/32715 , H01J2237/334 , H01L21/67017 , H01L21/68735 , H01L21/68742 , H01L21/68757
摘要： A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

10. 发明申请

US20160177444A1 REDUCING BACKSIDE DEPOSITION AT WAFER EDGE 审中-公开
标题翻译：减少背面沉积在边缘
公开(公告)号：US20160177444A1
公开(公告)日：2016-06-23
申请号：US14578126
申请日：2014-12-19
申请人： Lam Research Corporation
发明人： Chloe Baldasseroni , Andrew Duvall , Ryan Blaquiere , Shankar Swaminathan
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/4585 , H01J37/32623 , H01L21/68735 , H01L21/68785
摘要： A process chamber for depositing a film on a wafer is provided, including: a pedestal having, a central top surface having a plurality of wafer supports configured to support the wafer at a support level above the central top surface, an annular surface at a step down from the central top surface; a carrier ring configured to be supported by carrier ring supports such that a bottom surface of the carrier ring is at a first vertical separation above the annular surface, the carrier ring having a step down surface defined relative to a top surface; wherein when the carrier ring is seated on the carrier ring supports, then the step down surface of the carrier ring is positioned at a process level that is at a second vertical separation from the support level over the top surface of the pedestal.
摘要翻译：提供了一种用于在晶片上沉积膜的处理室，包括：基座，其具有中心顶表面，中心顶表面具有多个晶片支撑件，所述多个晶片支撑件被配置为将晶片支撑在中心顶表面上方的支撑位置处，从中央顶面下来; 载体环，其被构造成由载体环支撑支撑，使得所述载体环的底表面在所述环形表面上方处于第一垂直间隔，所述载体环具有相对于顶表面限定的台阶面; 其中，当所述承载环位于所述承载环支撑件上时，所述承载环的所述台阶下表面被定位在处于与所述基座的顶表面上方的所述支撑位置垂直分离的处理水平处。

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