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1. 发明专利

CA2809016A1 ECO-FRIENDLY ELECTRIC-GENERATING APPARATUS WITH POWER-MULTIPLYING GEAR MECHANISMS 未知
公开(公告)号：CA2809016A1
公开(公告)日：2014-09-13
申请号：CA2809016
申请日：2013-03-13
申请人： LIU PING-CHIH , CHEN RONG
发明人： LIU PING-CHIH , CHEN RONG
IPC分类号： F03G7/10 , F16H33/02 , H02K53/00
摘要： The purpose of the present invention is to provide a low-cost, easy-to-set-up and eco-friendly electric-generating apparatus with power-multiplying gear mechanisms. Its technical methods comprises of: an electric-generating apparatus and a base, with the electric-generating apparatus consisting of a drive gear, a driving motor, a transmission gear, a generator, and a control box. The biggest advantage the present invention has following this application has is that when generating electricity, aside from partial outside-energy, it can use a small part of its self-made energy to generate electricity, making its generating cost following its installment cheap with no other costs required aside from maintenance fees and salary payment for the management crew. The present invention, following its installment, can have a lifespan that would last decades, with little space required and completely unaffected by climate elements. As a green electric-generating apparatus with no pollution, it completely fits the ideal of eco-friendly electric-generating.

2. 发明申请

WO2008136882A3 FABRICATION METHOD OF SIZE-CONTROLLED, SPATIALLY DISTRIBUTED NANOSTRUCTURES BY ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：通过原子层沉积的尺寸控制，空间分布的纳米结构的制造方法
公开(公告)号：WO2008136882A3
公开(公告)日：2009-02-26
申请号：PCT/US2008002105
申请日：2008-02-14
申请人： UNIV LELAND STANFORD JUNIOR , HONDA MOTOR CO LTD , BENT STACEY F , CHEN RONG , JIANG XIRONG , SAITO YUJI
发明人： BENT STACEY F , CHEN RONG , JIANG XIRONG , SAITO YUJI
IPC分类号： H01L29/02 , H01L29/06
CPC分类号： C23C16/04 , C23C16/45525
摘要： A method of growing spatially-separated and size-controlled particles on substrate surfaces is provided. The method utilizes chemical modification of the substrate surface, an atomic layer deposition (ALD) system, providing a modified layer to the substrate surface and providing an ALD material for nanoparticle deposition. The method induces a Volmer-Weber growth method, where islands of the nanoparticles are formed on the surface. The modified layer controls a number of nucleation sites on the surface, where controlling the number of ALD cycles limits an amount of deposited the material for discrete the nanoparticles. The modified layer can include self-assembled monolayers, modified hydrophobicity of the surface, H-terminated surfaces, and varying functional groups within the modified layer, where thermally attached alkenes, photochemically attached alkenes, thermally attached alkynes or photochemically attached alkynes are attached to the H-terminated surfaces, and the density of the nucleation sites of the nanoparticles are thereby managed.
摘要翻译：提供了在衬底表面上生长空间分离和尺寸控制的颗粒的方法。该方法利用了衬底表面的化学改性，原子层沉积（ALD）系统，为衬底表面提供了改性层，并为纳米颗粒沉积提供了一种ALD材料。该方法诱导了Volmer-Weber生长方法，其中纳米颗粒的岛形成在表面上。改性层控制表面上的多个成核位点，其中控制ALD循环次数限制沉积材料以离散纳米颗粒的量。改性层可以包括自组装单层，表面改性疏水性，H封端的表面和改性层内的不同官能团，其中热连接的烯烃，光化学连接的烯烃，热连接的炔烃或光化学连接的炔烃连接到从而管理H封端的表面和纳米颗粒的成核位点的密度。

3. 发明申请

WO2008136882A9 FABRICATION METHOD OF SIZE-CONTROLLED, SPATIALLY DISTRIBUTED NANOSTRUCTURES BY ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：通过原子层沉积的尺寸控制，空间分布的纳米结构的制造方法
公开(公告)号：WO2008136882A9
公开(公告)日：2008-12-24
申请号：PCT/US2008002105
申请日：2008-02-14
申请人： UNIV LELAND STANFORD JUNIOR , HONDA MOTOR CO LTD , BENT STACEY F , CHEN RONG , JIANG XIRONG , SAITO YUJI
发明人： BENT STACEY F , CHEN RONG , JIANG XIRONG , SAITO YUJI
IPC分类号： H01L29/02 , H01L29/06
CPC分类号： C23C16/04 , C23C16/45525
摘要： A method of growing spatially-separated and size-controlled particles on substrate surfaces is provided. The method utilizes chemical modification of the substrate surface, an atomic layer deposition (ALD) system, providing a modified layer to the substrate surface and providing an ALD material for nanoparticle deposition. The method induces a Volmer-Weber growth method, where islands of the nanoparticles are formed on the surface. The modified layer controls a number of nucleation sites on the surface, where controlling the number of ALD cycles limits an amount of deposited the material for discrete the nanoparticles. The modified layer can include self-assembled monolayers, modified hydrophobicity of the surface, H-terminated surfaces, and varying functional groups within the modified layer, where thermally attached alkenes, photochemically attached alkenes, thermally attached alkynes or photochemically attached alkynes are attached to the H-terminated surfaces, and the density of the nucleation sites of the nanoparticles are thereby managed.
摘要翻译：提供了在衬底表面上生长空间分离和尺寸控制的颗粒的方法。该方法利用了衬底表面的化学改性，原子层沉积（ALD）系统，为衬底表面提供了改性层，并为纳米颗粒沉积提供了一种ALD材料。该方法诱导了Volmer-Weber生长方法，其中纳米颗粒的岛形成在表面上。改性层控制表面上的多个成核位点，其中控制ALD循环次数限制沉积材料以离散纳米颗粒的量。改性层可以包括自组装单层，表面改性疏水性，H封端的表面和改性层内的不同官能团，其中热连接的烯烃，光化学连接的烯烃，热连接的炔烃或光化学连接的炔烃连接到从而管理H封端的表面和纳米颗粒的成核位点的密度。

4. 发明申请

WO2008076812A3 METHODS FOR RECESS ETCHING 审中-公开
标题翻译：治疗方法
公开(公告)号：WO2008076812A3
公开(公告)日：2008-10-16
申请号：PCT/US2007087408
申请日：2007-12-13
申请人： APPLIED MATERIALS INC , SHEN MEIHUA , CHEN RONG , WILLIAMS SCOTT M
发明人： SHEN MEIHUA , CHEN RONG , WILLIAMS SCOTT M
IPC分类号： H01L21/02 , H01L21/70
CPC分类号： H01L21/3065 , H01L21/30655 , H01L29/66636 , H01L29/7848
摘要： Methods for recess etching are provided herein that advantageously improve lateral to vertical etch ratio requirements, thereby enabling deeper recess etching while maintaining relatively shallow vertical etch depths. Such enhanced lateral etch methods advantageously provide benefits for numerous applications where lateral to vertical etch depth ratios are constrained or where recesses or cavities are desired to be formed. In some embodiments, a method of recess etching includes providing a substrate having a structure formed thereon; forming a recess in the substrate at least partially beneath the structure using a first etch process; forming a selective passivation layer on the substrate; and extending the recess in the substrate using a second etch process. The selective passivation layer is generally formed on regions of the substrate adjacent to the structure but generally not within the recess. The first and second etch processes may be the same or different.
摘要翻译：本文提供了用于凹入蚀刻的方法，其有利地改进横向与纵向蚀刻比率要求，由此实现更深的凹入蚀刻，同时保持相对较浅的垂直蚀刻深度。这种增强的横向蚀刻方法有利地为横向到垂直蚀刻深度比受到限制或期望形成凹陷或空腔的多种应用提供益处。在一些实施例中，凹陷蚀刻的方法包括提供其上形成有结构的衬底; 使用第一蚀刻工艺在所述衬底中至少部分地在所述结构下方形成凹陷; 在衬底上形成选择性钝化层; 以及使用第二蚀刻工艺来延伸衬底中的凹陷。选择性钝化层通常形成在衬底的与结构相邻的区域上，但通常不在凹槽内。第一和第二蚀刻工艺可以相同或不同。

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