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1. 发明申请

WO2003043076A2 SURFACE PROTECTIVE SHEET FOR USE IN WAFER BACK GRINDING AND PROCESS FOR PRODUCING SEMICONDUCTOR CHIP 审中-公开
标题翻译：用于回磨的表面保护片和用于生产半导体芯片的工艺
公开(公告)号：WO2003043076A2
公开(公告)日：2003-05-22
申请号：PCT/JP2002/011566
申请日：2002-11-06
申请人： LINTEC CORPORATION , IZUMI, Tatsuya , TAKAHASHI, Kazuhiro , SENOO, Hideo , EBE, Kazuyoshi
发明人： IZUMI, Tatsuya , TAKAHASHI, Kazuhiro , SENOO, Hideo , EBE, Kazuyoshi
IPC分类号： H01L21/68
CPC分类号： B24B55/00 , B24B7/228 , H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6834
摘要： Disclosed herein is a surface protective sheet for semiconductor wafer, used in wafer back grinding during a process comprising providing a wafer of predetermined thickness having a surface furnished with circuits and a back, forming grooves of a cut depth smaller than the thickness of the wafer from the wafer surface and grinding the back of the wafer so that the thickness of the wafer is reduced and so that the wafer is finally divided into individual semiconductor chips, which surface protective sheet comprises a base material and, superimposed thereon, a pressure sensitive adhesive layer, the base material comprising two or more constituent layers which include a first constituent layer of 10 to 300 μm thickness exhibiting a Young's modulus of 3000 to 30,000 N/m 2 , and a second constituent layer exhibiting a glass transition temperature, measured by DSC, of 70 C or below, the second constituent layer beingan outermost layer. The use of the surface protective sheet, in the so-called predicing process, not only enables maintaining a given calf interval during and after the wafer back grinding but also facilitates fitting of the stripping tape.
摘要翻译：本文公开了一种用于半导体晶片的表面保护片，用于在包括提供电路和背面的表面的预定厚度的晶片的工艺过程中的晶片背面研磨中，形成切割深度小于晶片厚度的凹槽晶片表面并研磨晶片的背面，使得晶片的厚度减小，并且使得晶片最终分成单独的半导体芯片，该表面保护片包括基底材料并且叠加在其上的压敏粘合剂层所述基材包含两个或多个构成层，所述构成层包括具有3000至30,000N / m 2的杨氏模量的10至300μm厚度的第一构成层，以及显示玻璃化转变温度的第二构成层，其由 DSC为70℃以下，第二构成层为最外层。在所谓的检测过程中，使用表面保护片不仅可以在晶片背面研磨期间和之后保持给定的小腿间隔，而且有利于剥离胶带的装配。

2. 发明申请

WO2003043076A3 SURFACE PROTECTIVE SHEET FOR USE IN WAFER BACK GRINDING AND PROCESS FOR PRODUCING SEMICONDUCTOR CHIP 审中-公开
公开(公告)号：WO2003043076A3
公开(公告)日：2003-05-22
申请号：PCT/JP2002/011566
申请日：2002-11-06
申请人： LINTEC CORPORATION , IZUMI, Tatsuya , TAKAHASHI, Kazuhiro , SENOO, Hideo , EBE, Kazuyoshi
发明人： IZUMI, Tatsuya , TAKAHASHI, Kazuhiro , SENOO, Hideo , EBE, Kazuyoshi
IPC分类号： H01L21/68
摘要： Disclosed herein is a surface protective sheet for semiconductor wafer, used in wafer back grinding during a process comprising providing a wafer of predetermined thickness having a surface furnished with circuits and a back, forming grooves of a cut depth smaller than the thickness of the wafer from the wafer surface and grinding the back of the wafer so that the thickness of the wafer is reduced and so that the wafer is finally divided into individual semiconductor chips, which surface protective sheet comprises a base material and, superimposed thereon, a pressure sensitive adhesive layer, the base material comprising two or more constituent layers which include a first constituent layer of 10 to 300 µm thickness exhibiting a Young's modulus of 3000 to 30,000 N/m 2 , and a second constituent layer exhibiting a glass transition temperature, measured by DSC, of 70° C or below, the second constituent layer being an outermost layer.

3. 发明公开

EP3698964A1 BASE MATERIAL FOR GAS-BARRIER FILMS, GAS-BARRIER FILM, MEMBER FOR ELECTRONIC DEVICES, AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP3698964A1
公开(公告)日：2020-08-26
申请号：EP18869349.3
申请日：2018-10-10
申请人： LINTEC Corporation
发明人： OHASHI, Takehiro , IZUMI, Tatsuya
IPC分类号： B32B27/00 , B32B27/36 , H01L51/50 , H05B33/02 , H05B33/04
摘要： The present invention provides :a base material for gas-barrier films comprising a resin film and a hard coat layer directly or via another layer over each of both faces of the resin film, wherein the resin film is one that has a thermal shrinkage percentage of 0.3% or less, when measured after heating the resin film under a condition of 150°C for 2 hours in conformity with JIS K7133, and glass-transition temperature (Tg) of a resin constituting the resin film is 100°C or lower; a gas-barrier film comprising, directly or via another layer, a gas-barrier layer on at least one face side of the base material for gas-barrier films; a member for electronic devices including this gas-barrier film; and an electronic device provided with this member for electronic devices. According to the present invention, there are provided a base material for gas-barrier films that is unlikely to show thermal shrinkage, excellent in transparency before and after heating and inexpensive; a gas-barrier film with a gas-barrier layer formed on at least one face side of this base material; a member for electronic devices including this gas-barrier film; and an electronic device provided with this member for electronic devices.

4. 发明公开

EP1589085A1 PRESSURE SENSITIVE ADHESIVE SHEET, METHOD OF PROTECTING SEMICONDUCTOR WAFER SURFACE AND METHOD OF PROCESSING WORK 有权
标题翻译： HAFTFOLIE，SCHUTZVERFAHRENFÜRHALBLEITERWAFEROBERFLÄCHESOWIE BEARBEITUNGSVERFAHREN
公开(公告)号：EP1589085A1
公开(公告)日：2005-10-26
申请号：EP04703878.1
申请日：2004-01-21
申请人： Lintec Corporation
发明人： HORIGOME, Katsuhiko , IZUMI, Tatsuya , TAKAHASHI, Kazuhiro
IPC分类号： C09J7/02 , H01L21/02 , H01L21/301 , H01L21/304
CPC分类号： H01L21/6836 , C09J7/29 , C09J2201/162 , C09J2201/606 , C09J2203/326 , H01L21/78 , H01L2221/68327 , Y10T156/1911 , Y10T428/28
摘要： An object of the present invention is to provide a pressure sensitive adhesive sheet that does not adhere to other apparatuses and the like, even when it is applied to a manufacturing including heat treatment or treatment involving heat generation. It is a further object of the present invention to provide a pressure sensitive adhesive sheet for semiconductor wafer processing or the like having unprecedented high-temperature heat resistance, which can be used as a surface protective sheet, a dicing sheet or a pickup sheet, by imparting properties such as protective function of a circuit surface or expanding properties. A pressure sensitive adhesive sheet according to the present invention is characterized by comprising a base material obtained by film-forming and curing a first curable resin, a top coat layer formed on the base material by coating and curing a second curable resin, and a pressure sensitive adhesive layer formed on the opposite side of the base material.
摘要翻译：本发明的目的是提供一种即使在包括热处理或涉及发热的处理的制造中也不会附着到其他装置等上的压敏粘合片。本发明的另一个目的是提供一种用于半导体晶片加工等的压敏粘合片，其具有前所未有的高温耐热性，其可以用作表面保护片，切割片或拾取片，通过赋予电路表面的保护功能或扩展性能等特性。根据本发明的压敏粘合片的特征在于包括通过将第一可固化树脂成膜和固化得到的基材，通过涂覆和固化第二可固化树脂形成在基材上的面涂层和压力形成在基材的相对侧上的粘合剂层。

5. 发明公开

EP3533847A1 DIELECTRIC-HEATING BONDING FILM AND JOINING METHOD USING DIELECTRIC-HEATING BONDING FILM 有权
公开(公告)号：EP3533847A1
公开(公告)日：2019-09-04
申请号：EP17863456.4
申请日：2017-10-18
申请人： LINTEC Corporation
发明人： ISHIKAWA, Masakazu , IZUMI, Tatsuya
IPC分类号： C09J7/00 , B29C65/04 , B29C65/40 , C09J11/04 , C09J123/00 , C09J123/10 , H05B6/46 , H05B6/64
摘要： A dielectric welding film capable of tightly welding adherends of a polyolefin resin or the like within a relatively short time through dielectric heating, and a bonding method using the dielectric welding film are provided. The dielectric welding film is configured to bond a plurality of adherends of the same material or different materials through dielectric heating, the dielectric welding film containing (A) a polyolefin resin and (B) a dielectric filler whose mean particle size measured in accordance with JIS Z 8819-2 (2001) is in a range from 1 to 30 µm, a thickness of the dielectric welding film ranging from 10 to 2,000 µm. The method uses the dielectric welding film.

6. 发明授权

EP1589085B1 PRESSURE SENSITIVE ADHESIVE SHEET, METHOD OF PROTECTING SEMICONDUCTOR WAFER SURFACE AND METHOD OF PROCESSING WORK 有权
标题翻译：粘合膜，保护法半导体晶片表面和进程
公开(公告)号：EP1589085B1
公开(公告)日：2008-05-21
申请号：EP04703878.1
申请日：2004-01-21
申请人： Lintec Corporation
发明人： HORIGOME, Katsuhiko , IZUMI, Tatsuya , TAKAHASHI, Kazuhiro
IPC分类号： C08F10/02 , H01L21/02 , H01L21/301 , H01L21/304
CPC分类号： H01L21/6836 , C09J7/29 , C09J2201/162 , C09J2201/606 , C09J2203/326 , H01L21/78 , H01L2221/68327 , Y10T156/1911 , Y10T428/28
摘要： An object of the present invention is to provide a pressure sensitive adhesive sheet that does not adhere to other apparatuses and the like, even when it is applied to a manufacturing including heat treatment or treatment involving heat generation. It is a further object of the present invention to provide a pressure sensitive adhesive sheet for semiconductor wafer processing or the like having unprecedented high-temperature heat resistance, which can be used as a surface protective sheet, a dicing sheet or a pickup sheet, by imparting properties such as protective function of a circuit surface or expanding properties. A pressure sensitive adhesive sheet according to the present invention is characterized by comprising a base material obtained by film-forming and curing a first curable resin, a top coat layer formed on the base material by coating and curing a second curable resin, and a pressure sensitive adhesive layer formed on the opposite side of the base material.

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