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1. 发明申请

WO2013002570A2 NANOWIRE MANUFACTURING METHOD 审中-公开
标题翻译：纳米制造方法
公开(公告)号：WO2013002570A2
公开(公告)日：2013-01-03
申请号：PCT/KR2012/005116
申请日：2012-06-28
申请人： LG INNOTEK CO., LTD. , LEE, Young Jae , YOO, Kyoung Jong , LEE, Jun , KIM, Jin Su , PARK, Jae Wan
发明人： LEE, Young Jae , YOO, Kyoung Jong , LEE, Jun , KIM, Jin Su , PARK, Jae Wan
CPC分类号： C23C14/0005 , B22F1/0044 , B22F9/16 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C04B35/622 , C23C16/01 , C30B11/12 , C30B29/60 , H01L29/0673 , H01L29/66469 , H01L29/775 , Y10S977/888 , Y10S977/89 , Y10T428/24802 , Y10T428/298
摘要： Provided is a nanowire manufacturing method, comprising forming a plurality of grid patterns on a substrate, forming a nanowire on the grid patterns, and separating the grid pattern and the nanowire. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.
摘要翻译：提供一种纳米线制造方法，包括在基板上形成多个网格图案，在网格图案上形成纳米线，并分离网格图案和纳米线。根据本发明，可以通过控制湿蚀刻工艺时间段来调节纳米线的宽度和高度，并且可以以低成本在室温下制造纳米线，可以大量制造纳米线，并且纳米线即使在大规模生产的情况下也可以制造。

2. 发明申请

WO2010013861A1 ANION-EXCHANGE COMPOSITE MEMBRANE CONTAINING STYRENE-BASED AND VINYLBENZENE-BASED COPOLYMER AND METHOD FOR PREPARING THE SAME 审中-公开
标题翻译：含有基于苯乙烯和基于苯乙烯的共聚物的阴离子交换复合膜及其制备方法
公开(公告)号：WO2010013861A1
公开(公告)日：2010-02-04
申请号：PCT/KR2008/005333
申请日：2008-09-10
申请人： KOREA RESERACH INSTITUTE OF CHEMICAL TECHNOLOGY , KIM, Jeong Hoon , LEE, Soo Bok , PARK, In Joon , CHANG, Bong Jun , HA, Jong-Wook , YOO, Min Chul , LEE, Jung Soo , PARK, Jae Wan
发明人： KIM, Jeong Hoon , LEE, Soo Bok , PARK, In Joon , CHANG, Bong Jun , HA, Jong-Wook , YOO, Min Chul , LEE, Jung Soo , PARK, Jae Wan
IPC分类号： C08J5/22
CPC分类号： C08J5/2287 , C08J5/2275 , C08J2323/02 , C08J2325/18
摘要： Provided are an anion-exchange composite membrane containing a styrene-based and vinylbenzene-based copolymer on a porous film, and a method for manufacturing the same. Specifically, provided is a an anion-exchange composite membrane containing a styrene-based and vinylbenzene-basedvinylbenzene-basedon a porous film, which is manufactured by performing polymerization through impregnation of the porous film with a polymerization solution containing a styrene-based monomer, a vinylbenzene-based monomer, a crosslinking agent and an initiator, and introducing ammonium ions. More specifically, provided are an anion-exchange composite membrane containing a styrene-based and vinylbenzene-based copolymer with excellent ion exchange capacity, mechanical properties, chemical resistance and processability, and a method for preparing the anion-exchange composite membrane.
摘要翻译：提供了一种在多孔膜上含有苯乙烯基和乙烯基苯系共聚物的阴离子交换复合膜及其制造方法。具体地说，提供了一种含有基于苯乙烯基和乙烯基苯基乙烯基苯的多孔膜的阴离子交换复合膜，其通过用含有苯乙烯类单体的聚合溶液浸渍多孔膜进行聚合而制造，乙烯基苯单体，交联剂和引发剂，并引入铵离子。更具体地说，提供了含有具有优异的离子交换能力，机械性能，耐化学性和加工性的苯乙烯基和乙烯基苯系共聚物的阴离子交换复合膜以及阴离子交换复合膜的制备方法。

3. 发明公开

EP2983108A3 Fingerprint sensor and touch device including the same 审中-公开
标题翻译：指纹传感器和触敏设备，以便
公开(公告)号：EP2983108A3
公开(公告)日：2016-07-13
申请号：EP15178869.2
申请日：2015-07-29
申请人： LG Innotek Co., Ltd.
发明人： KIM, Seung Jin , PARK, Jae Wan , KIM, Hyun Soo , BANG, Jung Hwan , LEE, Dong Keun , JANG, Sin Ae , JEONG, Jong Seon , YOO, Kyoung Jong
IPC分类号： G06K9/00
CPC分类号： G06K9/0002 , G06F3/041 , G06K9/00053
摘要： A fingerprint sensor includes a piezoelectric substrate (100 ; 200 ; 500), and an electrode on the piezoelectric substrate (100 ; 200 ; 500). The electrode includes a first electrode (310) and a second electrode (320) on at least one of one surface of the piezoelectric substrate (100 ; 200 ; 500) and an opposite surface opposite to the one surface. The electrode includes a node area (N) in which the first electrode (310) crosses the second electrode (320), and the node area (N) transmits and receives a signal by an object that makes contact with the node area (N) or approaches the node area (N) in a direction of the piezoelectric substrate (100 ; 200 ; 500). The fingerprint sensor includes a substrate (100 ; 200 ; 500) including a first area (310) to a fourth area (1A to 4A). At least one of first and second electrodes (310 ; 320) is provided in the first area to the third area (1A to 3A), and a chip (600) connected with the first and second electrodes (310 ; 320) is provided in the fourth area (4A).

4. 发明公开

EP2983108A2 Fingerprint sensor and touch device including the same 审中-公开
标题翻译：手指传感器和维修手册
公开(公告)号：EP2983108A2
公开(公告)日：2016-02-10
申请号：EP15178869.2
申请日：2015-07-29
申请人： LG Innotek Co., Ltd.
发明人： KIM, Seung Jin , PARK, Jae Wan , KIM, Hyun Soo , BANG, Jung Hwan , LEE, Dong Keun , JANG, Sin Ae , JEONG, Jong Seon , YOO, Kyoung Jong
IPC分类号： G06K9/00
CPC分类号： G06K9/0002 , G06F3/041 , G06K9/00053
摘要： A fingerprint sensor includes a piezoelectric substrate (100 ; 200 ; 500), and an electrode on the piezoelectric substrate (100 ; 200 ; 500). The electrode includes a first electrode (310) and a second electrode (320) on at least one of one surface of the piezoelectric substrate (100 ; 200 ; 500) and an opposite surface opposite to the one surface. The electrode includes a node area (N) in which the first electrode (310) crosses the second electrode (320), and the node area (N) transmits and receives a signal by an object that makes contact with the node area (N) or approaches the node area (N) in a direction of the piezoelectric substrate (100 ; 200 ; 500). The fingerprint sensor includes a substrate (100 ; 200 ; 500) including a first area (310) to a fourth area (1A to 4A). At least one of first and second electrodes (310 ; 320) is provided in the first area to the third area (1A to 3A), and a chip (600) connected with the first and second electrodes (310 ; 320) is provided in the fourth area (4A).
摘要翻译：指纹传感器包括压电衬底（100; 200; 500）和压电衬底（100; 200; 500）上的电极。电极在压电基板（100; 200; 500）的一个表面和与该表面相对的相对表面中的至少一个表面上包括第一电极（310）和第二电极（320）。电极包括其中第一电极（310）与第二电极（320）交叉的节点区域（N），并且节点区域（N）通过与节点区域（N）接触的对象发送和接收信号，或在压电基板（100; 200; 500）的方向上接近节点区域（N）。指纹传感器包括包括第一区域（310）到第四区域（1A至4A）的基板（100; 200; 500）。第一和第二电极中的至少一个在第一区域被提供到第三区域（1A至3A），并且与第一和第二电极（310; 320）连接的芯片（600）设置在第四区域（4A）。

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