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    • 2. 发明申请
    • ORGANIC LIGHT EMITTING DEVICE HAVING SURFACE-TREATED BOTTOM ELECTRODE
    • 具有表面处理底层电极的有机发光装置
    • WO2007081120A1
    • 2007-07-19
    • PCT/KR2007/000095
    • 2007-01-08
    • LG CHEM, LTD.LEE, Jae-SeungKIM, Jung-BumLEE, Young-Chul
    • LEE, Jae-SeungKIM, Jung-BumLEE, Young-Chul
    • H05B33/26
    • C09K11/06H05B33/14
    • Disclosed is a method of manufacturing an organic light emitting device, which comprises the steps of successively stacking a bottom electrode, an organic layer including an emission layer, and a top electrode, the method further comprising the step of: surface-treating the bottom electrode with ion beam etching before stacking the organic layer. By effectively removing impurities such as polymer materials or oxidation films, which are formed on the bottom electrode of the organic light emitting device, not only electron injection and hole injection in the organic light emitting device progress smoothly, but also an operation voltage is lowered and performance reliability can ensured because the surface roughness of the bottom electrode is maintained at the same level before and after ion milling.
    • 公开了一种制造有机发光器件的方法,其包括以下步骤:连续堆叠底电极,包括发射层的有机层和顶电极,所述方法还包括以下步骤:对所述底电极进行表面处理 在堆叠有机层之前进行离子束蚀刻。 通过有效地除去形成在有机发光器件的底部电极上的诸如聚合物材料或氧化膜的杂质,不仅有机发光器件中的电子注入和空穴注入进行顺利,还降低了操作电压, 由于底电极的表面粗糙度在离子研磨前后维持在相同的水平,所以可确保性能的可靠性。
    • 5. 发明申请
    • METHOD FOR PREPARING LIGHT EMITTING DIODE DEVICE HAVING HEAT DISSIPATION RATE ENHANCEMENT
    • 用于制备具有加热排放速率增强的发光二极管装置的方法
    • WO2007001144A1
    • 2007-01-04
    • PCT/KR2006/002478
    • 2006-06-27
    • LG CHEM, LTD.
    • LEE, Jae-SeungCHOI, Min-HoSHIN, Bu-GonKANG, Jong-HoonYU, Min-AHA, Duk-SikKHO, Dong-HanCHUN, Sang-KiCHANG, Suk-KyPARK, Soo-Min
    • H01L33/00
    • H01L33/0079H01L33/0095H01L2224/45144H01L2224/48091H01L2224/48247H01L2224/49107H01L2224/73265H01L2924/00014H01L2924/00
    • Disclosed are a method for fabricating a light emitting diode device having a light emitting diode section grown on a sapphire substrate, a boded structure fabricated through the method, a unit chip separated from the bonded structure, and a light emitting diode device having the unit chip. The method includes the steps of (a) bonding the light emitting diode section grown on a first surface of the sapphire substrate to a first surface of a first substrate by means of a first binder; (b) bonding a second surface of the first substrate to a first surface of a second substrate by means of a second binder; (c) removing the second substrate from a bonded structure obtained as a result of step (b) after polishing a second surface of the sapphire substrate; (d) separating the bonded structure into unit chips after the second substrate has been removed from the bonded structure; and (e) bonding the second surface of the polished sapphire substrate provided in each unit chip to a lead frame, and then removing the first substrate. In the manufacture of high-output light emitting diodes, such a method can remarkably improve heat dissipation efficiency by intentionally reducing the thickness of the sapphire substrate.
    • 公开了一种制造发光二极管器件的方法,该发光二极管器件具有在蓝宝石衬底上生长的发光二极管部分,通过该方法制造的结构结构,与接合结构分离的单元芯片和具有单元芯片的发光二极管器件 。 该方法包括以下步骤:(a)借助于第一粘结剂将在蓝宝石衬底的第一表面上生长的发光二极管部分与第一衬底的第一表面接合; (b)借助于第二粘合剂将所述第一基板的第二表面接合到第二基板的第一表面; (c)在抛光蓝宝石衬底的第二表面之后,从作为步骤(b)的结果获得的接合结构去除第二衬底; (d)在从接合结构移除第二基板之后将接合结构分离成单元芯片; 和(e)将设置在每个单元芯片中的经抛光的蓝宝石衬底的第二表面接合到引线框架,然后移除第一衬底。 在高输出发光二极管的制造中,通过有意地减小蓝宝石衬底的厚度,可以显着提高散热效率。
    • 7. 发明申请
    • METHOD FOR MANUFACTURING G a N-BASED LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY
    • 使用激光提升技术制造基于N的发光二极管的方法和制造的发光二极管
    • WO2006065010A1
    • 2006-06-22
    • PCT/KR2005/002031
    • 2005-06-29
    • LG CHEM, LTD.
    • LEE, Jae-SeungSHIN, Bu-GonCHOI, Min-HoKANG, Jong-HoonYU, Min-AOH, Byung-Du
    • H01L33/00
    • H01L33/0079H01L33/22H01L33/38H01L2224/45144H01L2224/48091H01L2224/48247H01L2224/49107H01L2224/73265H01L2924/00014H01L2924/00
    • The present invention provides a method for manufacturing an LED, which has a superior light emitting efficiency as well as a superior heat discharging efficiency, by means of a simplified manufacturing process for its massive production. The invention is capable of substantially reducing the steps of manufacturing process and enhancing the heat discharging efficiency by employing a laser lift-off technique instead of the flip-chip bonding technique. Also, unlike the conventional laser lift-off technique of forming LED chips as unit chips after irradiating the laser to remove sapphire substrates, on which the LEDs have grown, the present invention forms the LED chips as unit chips before irradiating the laser, thereby increasing the yield and realizing the mass production by preventing cleavage of the crystal structures of LEDs caused due to irradiation of laser. Furthermore, the invention can enhance the heat discharging efficiency by roughening the surface of an n-type GaN layer. The present invention does not require a photolithography process. As a result, the steps of manufacturing process can be drastically reduced in comparison with the flip-chip bonding technique. Also, the light emitting area can be widened 30% more than in case of employing the flip-chip technique. Thus, the present invention serves to increase the light output as well as the heat discharging area, thereby drastically enhancing the performance of manufacturing high-output LEDs.
    • 本发明提供了一种制造LED的方法,其通过简化的大规模制造工艺具有优异的发光效率以及优异的散热效率。 通过采用激光剥离技术代替倒装芯片接合技术,本发明能够显着地减少制造工艺的步骤和提高散热效率。 此外,与照射激光去除蓝宝石衬底之后的LED芯片形成LED芯片的常规激光剥离技术不同,LED在其上生长,本发明在照射激光之前形成作为单元芯片的LED芯片,从而增加 通过防止由于激光的照射而导致的LED的晶体结构的裂开,实现了大量生产。 此外,本发明可以通过粗糙化n型GaN层的表面来提高散热效率。 本发明不需要光刻工艺。 结果,与倒装芯片接合技术相比,制造工艺的步骤可以大大降低。 此外,与使用倒装芯片技术的情况相比,发光面积可以扩大30%以上。 因此,本发明用于增加光输出以及放热面积,从而大大提高制造高输出LED的性能。