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1. 发明授权

US11430936B2 Thermoelectric module 有权
公开(公告)号：US11430936B2
公开(公告)日：2022-08-30
申请号：US16642576
申请日：2019-08-14
申请人： LG CHEM, LTD.
发明人： Jae Hyun Kim , Cheol Hee Park
IPC分类号： H01L35/32 , H01L35/10 , H01L35/04
摘要： The present invention relates to a thermoelectric module, and a thermoelectric module according to an exemplary embodiment of the present invention includes: a plurality of thermoelectric elements that are disposed between a heat transmission member and a cooling member; and a first electrode layer and a second electrode layer that are respectively disposed between the heat transmission member and the plurality of thermoelectric elements and between the cooling member and the plurality of thermoelectric elements, wherein the plurality of thermoelectric elements may include P-type thermoelectric elements and N-type thermoelectric elements, and a P-type thermoelectric element and an N-type thermoelectric element that neighbor each other may have different heights, and one electrode layer selected from among the first electrode layer and the second electrode layer formed throughout the P-type thermoelectric element and the N-type thermoelectric element that neighbor each other may have at least two bent portions.

2. 发明授权

US11024438B2 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same 有权
公开(公告)号：US11024438B2
公开(公告)日：2021-06-01
申请号：US16462179
申请日：2018-06-05
申请人： LG CHEM, LTD.
发明人： Min Kyoung Kim , Yu Ho Min , Cheol Hee Park , Kyung Moon Ko , Chee Sung Park , Myung Jin Jung
IPC分类号： H01B1/06 , C01G5/00 , C01G19/00 , C01G29/00 , H01L35/16 , C01B19/00
摘要： A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability even at a low temperature, particularly at a temperature corresponding to an operating temperature of a thermoelectric element, and also exhibits a significantly superior power factor and thermoelectric performance index due to its excellent electrical conductivity and low thermal conductivity caused by its unique crystal lattice structure, a method for preparing the same, and a thermoelectric element including the same. [Chemical Formula 1]—V1-2xSn4Bi2-xAg3xSe7, wherein V is vacancy and 0

3. 发明申请

US20200002168A1 CHALCOGEN-CONTAINING COMPOUND, ITS PREPARATION METHOD AND THERMOELECTRIC ELEMENT COMPRISING THE SAME 审中-公开
公开(公告)号：US20200002168A1
公开(公告)日：2020-01-02
申请号：US16484945
申请日：2018-09-28
申请人： LG CHEM, LTD.
发明人： Min Kyoung Kim , Yu Ho Min , Cheol Hee Park , Kyung Moon Ko , Chee Sung Park , Myung Jin Jung
IPC分类号： C01B19/00 , C30B33/02 , C30B29/46 , H01L35/16 , H01L35/28
摘要： A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: MyV1-ySnxSb2Tex+3, wherein V is vacancy, M is at least one alkali metal, x≥6, and 0

4. 发明授权

US10084183B2 Silicon oxide-carbon composite and method of manufacturing the same 有权
公开(公告)号：US10084183B2
公开(公告)日：2018-09-25
申请号：US14109611
申请日：2013-12-17
申请人： LG CHEM, LTD.
发明人： Cheol Hee Park , Han Nah Jeong , Sang Yun Jung , Byung Kyu Lim , Yong Ju Lee
IPC分类号： H01M4/36 , C01B33/113 , C01B31/02 , H01M4/48 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/38 , H01M4/62 , C01B33/18 , H01M4/485 , H01M4/587 , H01M10/052
CPC分类号： H01M4/366 , C01B32/05 , C01B33/113 , C01B33/181 , H01M4/0421 , H01M4/0471 , H01M4/134 , H01M4/1395 , H01M4/386 , H01M4/483 , H01M4/485 , H01M4/587 , H01M4/625 , H01M10/052
摘要： Provided are a silicon oxide-carbon composite and a method of manufacturing the same. More particularly, the present invention provides a method of manufacturing a silicon oxide-carbon composite including mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, reacting the mixture of silicon and silicon dioxide in a reducing atmosphere, and coating a surface of silicon oxide manufactured by the reaction with carbon, and a silicon oxide-carbon composite manufactured thereby.

5. 发明授权

US11245062B2 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same 有权
公开(公告)号：US11245062B2
公开(公告)日：2022-02-08
申请号：US16756019
申请日：2019-08-23
申请人： LG CHEM, LTD.
发明人： Minkyoung Kim , Cheol Hee Park , Chee Sung Park , Myungjin Jung
IPC分类号： H01L35/16 , C01B19/00 , C30B29/46
摘要： A chalcogen-containing compound of the following Chemical Formula 1, which may have decreased thermal conductivity and improved power factor in the low temperature region, and thus exhibit an excellent thermoelectric figure of merit, a method for preparing the same, and a thermoelectric element including the same: V1Sna−xInxSb2Tea+3 [Chemical Formula 1] wherein V, a and x are as defined in the specification.

6. 发明授权

US11158779B1 Thermoelectric material and thermoelectric device including the same 有权
公开(公告)号：US11158779B1
公开(公告)日：2021-10-26
申请号：US16623262
申请日：2019-05-08
申请人： LG CHEM, LTD.
发明人： Jaehyun Kim , Sujeong Lee , Yeseul Lee , Cheol Hee Park
IPC分类号： H01L35/18 , C22C12/00 , H01L35/34
摘要： A thermoelectric material which minimize the content of components that degrade thermoelectric performance and thus can be usefully used in thermoelectric devices including the same.

7. 发明授权

US11072530B2 Compound semiconductor and use thereof 有权
公开(公告)号：US11072530B2
公开(公告)日：2021-07-27
申请号：US16095029
申请日：2017-12-22
申请人： LG CHEM, LTD.
发明人： Kyung Moon Ko , Cheol Hee Park , Chee Sung Park , Min Kyoung Kim
IPC分类号： H01L35/18 , C01B19/00 , H01L49/00 , H01L31/18 , H01L35/34 , H01L31/04 , H01L31/0272 , H01L31/032 , H01L35/14
摘要： A novel compound semiconductor which can be used for a solar cell, a thermoelectric material, or the like, and the use thereof.

8. 发明申请

US20140106221A1 SILICON OXIDE FOR ANODE ACTIVE MATERIAL OF SECONDARY BATTERY 审中-公开
标题翻译：用于二次电池阳极活性材料的氧化硅
公开(公告)号：US20140106221A1
公开(公告)日：2014-04-17
申请号：US14109591
申请日：2013-12-17
申请人： LG CHEM, LTD.
发明人： Cheol Hee Park , Han Nah Jeong , Byung Kyu Lim , Je Young Kim , Sang Yun Jung , Tae Hoon Kim
IPC分类号： H01M4/48 , C01B33/113
CPC分类号： H01M4/48 , C01B33/113 , C01B33/181 , C01P2002/74 , H01M4/483 , H01M4/485 , H01M10/05 , H01M10/052
摘要： Provided is silicon oxide for an anode active material of a secondary battery. More particularly, the present invention provides silicon oxide included in an anode active material of a secondary battery, wherein a ratio of a maximum height (h2) of a peak in a 2 theta range of 40° to 60° to a maximum height (h1) of a peak in a 2 theta range of 15° to 40° in a X-ray diffraction (XRD) pattern of the silicon oxide satisfies 0.40≦h2/h1≦1.5.
摘要翻译：提供了二次电池的负极活性物质的氧化硅。更具体地说，本发明提供了二次电池的负极活性物质中所含的氧化硅，其中在40度至60度的2θ范围内的峰的最大高度（h2）与最大高度（h1）之比）在氧化硅的X射线衍射（XRD）图案中在15°至40°的2θ范围内的峰满足0.40＆lt; nlE; h2 / h1＆nlE; 1.5。

9. 发明授权

US11309476B2 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same 有权
公开(公告)号：US11309476B2
公开(公告)日：2022-04-19
申请号：US16310554
申请日：2018-03-19
申请人： LG CHEM, LTD.
发明人： Yu Ho Min , Min Kyoung Kim , Cheol Hee Park , Kyung Moon Ko , Chee Sung Park , Myung Jin Jung
IPC分类号： H01L35/16 , C01B19/00 , H01L35/34
摘要： The present invention relates to a novel chalcogen-containing compound that exhibits excellent phase stability even at a temperature corresponding to the driving temperature of a thermoelectric element, and has a high output factor and thermoelectric figure of merit, a method for preparing the same, and a thermoelectric element including the same.

10. 发明授权

US11306004B2 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same 有权
公开(公告)号：US11306004B2
公开(公告)日：2022-04-19
申请号：US16463300
申请日：2018-05-11
申请人： LG CHEM, LTD.
发明人： Min Kyoung Kim , Yu Ho Min , Cheol Hee Park , Kyung Moon Ko , Chee Sung Park , Jae Hyun Kim , Myung Jin Jung
IPC分类号： C01B19/00 , C01G29/00
摘要： A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability at a temperature corresponding to the driving temperature of a thermoelectric element, and also exhibits an excellent thermoelectric performance index (ZT) through an increase in a power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: V1-xMxSn4-yPbyBi2Se7-zTez [Chemical Formula 1] In the above Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, y is greater than 0 and less than 4, and z is greater than 0 and less than or equal to 1.

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