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1. 发明申请

WO2007044545A2 MONOLITICALLY INTEGRATED OPTICAL DEVICES WITH AMORPHOUS SILICON ARRAYED WAVEGUIDE GRATINGS AND INGAASP GAIN 审中-公开
标题翻译：具有无定形硅阵列波导光栅的单一集成光学器件和高分子增益
公开(公告)号：WO2007044545A2
公开(公告)日：2007-04-19
申请号：PCT/US2006039198
申请日：2006-10-06
申请人： LEE MICHAEL J , LEE BONG HOON , ABELES JOSEPH , CAPEWELL DAVID , DIMARCO LOUIS , KWAKERNAAK MARTIN H , MOHSENI HOOMAN , WHALEY RALPH , YANG LIYOU , PAJER GARRY
发明人： ABELES JOSEPH , CAPEWELL DAVID , DIMARCO LOUIS , KWAKERNAAK MARTIN H , MOHSENI HOOMAN , WHALEY RALPH , YANG LIYOU , PAJER GARRY , MALEY NAGENDRANATH
IPC分类号： G02B6/12
CPC分类号： G02B6/12019 , G02B6/12004 , G02B6/122 , G02B2006/12061 , G02B2006/121
摘要： An optical waveguide assembly and method of forming the same is described. The optical waveguide assembly includes a waveguide, an amorphous silicon arrayed waveguide grating communicative with the waveguide, and an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to the amorphous silicon arrayed waveguide grating. The method includes providing a waveguide, providing an amorphous silicon arrayed waveguide grating communicative with the waveguide, and providing an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to the amorphous silicon arrayed waveguide grating.
摘要翻译：描述了一种光波导组件及其形成方法。光波导组件包括波导，与波导通信的非晶硅阵列波导光栅以及响应于非晶硅阵列波导光栅而通信地输出激光输出的集成非晶硅波导光栅激光器。该方法包括提供波导，提供与波导通信的非晶硅阵列波导光栅，并提供集成的非晶硅波导光栅激光器，其响应于非晶硅阵列波导光栅而通信地输出激光输出。

2. 发明申请

WO2007044554A3 AMORPHOUS SILICON WAVEGUIDES ON III/V SUBSTRATES WITH A BARRIER LAYER 审中-公开
标题翻译：具有障碍层的III / V基板上的非晶硅波导
公开(公告)号：WO2007044554A3
公开(公告)日：2007-11-22
申请号：PCT/US2006039210
申请日：2006-10-06
申请人： LEE MICHAEL J , LEE BONG HOON , ABELES JOSEPH , CAPEWELL DAVID , DIMARCO LOUIS , KWAKERNAAK MARTIN H , MOHSENI HOOMAN , WHALEY RALPH , YANG LIYOU , CHAN WINSTON KONG , KIM GEORGE
发明人： ABELES JOSEPH , CAPEWELL DAVID , DIMARCO LOUIS , KWAKERNAAK MARTIN H , MOHSENI HOOMAN , WHALEY RALPH , YANG LIYOU , CHAN WINSTON KONG , KIM GEORGE , MALEY NAGENDRANATH
IPC分类号： G02B6/10
CPC分类号： G02B6/12004 , G02B6/12002 , G02B6/136 , G02B2006/12061 , G02B2006/12147 , G02F2201/501 , G02F2202/103
摘要： An optical device and a method of forming the same is described. The optical waveguide includes a substrate, an etch-stop layer adjacent to the substrate, a barrier layer adjacent to the etch-stop layer, and an active waveguide having a lower cladding layer adjacent to the barrier layer. Also described is a method of coupling to at least one active waveguide. The method includes etching an active waveguide with a high selectivity towards a crystallographic plane to form a sloped terminice with respect to a substrate upon which the active waveguide is formed, and depositing at least one other waveguide over the etched sloped terminice and at least a portion of the substrate, wherein the at least one other waveguide is photonically coupled to the etched active waveguide to provide photonic interconnectivity for the etched active waveguide.
摘要翻译：描述了一种光学装置及其形成方法。光波导包括衬底，与衬底相邻的蚀刻停止层，与蚀刻停止层相邻的阻挡层以及具有与阻挡层相邻的下包层的有源波导。还描述了耦合到至少一个有源波导的方法。该方法包括以高选择性向晶面蚀刻有源波导以相对于其上形成有源波导的衬底形成倾斜端子，并且在蚀刻倾斜端子上沉积至少一个其他波导，并且将至少一部分波导其中所述至少一个其他波导光子耦合到所蚀刻的有源波导，以为所蚀刻的有源波导提供光子互连性。

3. 发明申请

WO2007044542A3 METHOD OF REDUCING EDGE HEIGHT AT THE OVERLAP OF A LAYER DEPOSITED ON A STEPPED SUBSTRATE 审中-公开
标题翻译：降低在台阶基板上沉积的层的重叠处的边缘高度的方法
公开(公告)号：WO2007044542A3
公开(公告)日：2007-10-25
申请号：PCT/US2006039195
申请日：2006-10-06
申请人： LEE MICHAEL J , LEE BONG HOON , ABELES JOSEPH , CAPEWELL DAVID R , DIMARCO LOUIS , KWAKERNAAK MARTIN , MOHSENI HOOMAN , WHALEY RALPH , YANG LIYOU
发明人： ABELES JOSEPH , CAPEWELL DAVID R , DIMARCO LOUIS , KWAKERNAAK MARTIN , MOHSENI HOOMAN , WHALEY RALPH , YANG LIYOU , MALEY NAGENDRANATH
IPC分类号： H01L21/302 , H01L21/308 , H01L21/312
CPC分类号： G02B6/12002 , G02B6/132 , G02B6/136 , G02B2006/12173 , G02B2006/12195
摘要： A system and method for preparing a stepped substrate and an apparatus are disclosed. The method comprises depositing photoresist on a stepped substrate, removing a first portion of the photoresist, reflowing the remaining portion of the photoresist; and etching a portion of the reflowed remaining photoresist and a portion of the stepped substrate. The apparatus comprises a deposited photoresist layer on a stepped substrate, wherein a portion of the photoresist is removed, a reflowed portion of the remaining photoresist, an etched portion of the reflowed photoresist, and an etched portion of the stepped substrate. The system for preparing a stepped substrate comprises a first processing tool for depositing at a portion of photoresist on the stepped substrate, a second processing tool for removing at least a first portion of the photoresist, a third processing tool for reflowing at least a portion of the remaining portion of the photoresist, and a fourth processing tool for etching a portion of the reflowed photoresist and a portion of the stepped substrate.
摘要翻译：公开了用于制备阶梯式衬底的系统和方法以及设备。该方法包括在步进基板上沉积光刻胶，去除光刻胶的第一部分，回流光刻胶的剩余部分; 以及蚀刻一部分回流的剩余光致抗蚀剂和一部分阶梯状基底。该设备包括在台阶状基底上沉积的光致抗蚀剂层，其中去除光致抗蚀剂的一部分，剩余光致抗蚀剂的回流部分，回流光致抗蚀剂的蚀刻部分以及阶状基底的蚀刻部分。用于制备阶梯式衬底的系统包括用于在阶梯式衬底上的光致抗蚀剂的一部分上沉积用于去除光致抗蚀剂的至少第一部分的第二处理工具的第一处理工具，用于回流至少一部分光致抗蚀剂的剩余部分以及用于蚀刻部分回流光致抗蚀剂和一部分阶梯状基底的第四处理工具。

4. 发明申请

WO2007044543A3 INTERFACE FOR A-SI WAVEGUIDES AND III/V WAVEGUIDES 审中-公开
标题翻译：用于A-SI波形和III / V波形的接口
公开(公告)号：WO2007044543A3
公开(公告)日：2007-11-15
申请号：PCT/US2006039196
申请日：2006-10-06
申请人： LEE MICHAEL J , LEE BONG HOON , CAPEWELL DAVID , KWAKERNAAK MARTIN H , MOHSENI HOOMAN , CHAN WINSTON KONG
发明人： CAPEWELL DAVID , KWAKERNAAK MARTIN H , MOHSENI HOOMAN , CHAN WINSTON KONG
IPC分类号： H01L21/302
CPC分类号： G02B6/12002 , B82Y20/00 , G02B6/12004 , G02B6/136 , G02B2006/12121 , G02B2006/12147 , H01S5/026 , H01S5/34306
摘要： A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.
摘要翻译：描述了将波导耦合到衬底上的多层有源器件结构的方法。该方法包括通过蚀刻有源器件结构形成接合区域以相对于衬底形成倾斜的蚀刻轮廓，通过与多层有源器件结构相邻的蚀刻停止来对准多层有源器件结构的多个层，以及在所述蚀刻的有源器件结构上沉积所述波导，其中在所述接合区域处形成倾斜的有源无源结，以减少所形成的耦合器件中的残留界面反射。还描述了用于去除形成无源非晶硅波导的倾斜结区域中的至少一个激光层的方法。这包括沉积用作蚀刻掩模的SiN层，图案化光致抗蚀剂掩模，通过反应离子蚀刻图案化SiN层，剥离光致抗蚀剂掩模和蚀刻至少一个激光层。

5. 发明申请

WO2004095519A2 METHOD AND SYSTEM FOR COUPLING WAVEGUIDES 审中-公开
标题翻译：用于耦合波形的方法和系统
公开(公告)号：WO2004095519A2
公开(公告)日：2004-11-04
申请号：PCT/US2004012634
申请日：2004-04-23
申请人： DEWELL CORP , ABELES JOSEPH , CAPEWELL DAVID , DIMARCO LOU , KWAKERNAAK MARTIN , MALEY NAGENDRANATH , MOHSENI HOOMAN , WHALEY RALPH , YANG LIYOU
发明人： ABELES JOSEPH , CAPEWELL DAVID , DIMARCO LOU , KWAKERNAAK MARTIN , MALEY NAGENDRANATH , MOHSENI HOOMAN , WHALEY RALPH , YANG LIYOU
IPC分类号： G02B6/12 , G02B6/122 , G02B6/132 , G02B6/42 , H01L
CPC分类号： G02B6/132 , B82Y20/00 , G02B6/12004 , G02B6/122 , G02B6/1223 , G02B6/424 , G02B2006/12121 , G02B2006/12123 , G02B2006/12142
摘要： A method for photonically coupling to at least one active photonic device structure formed on a substrate, the method including: etching the active device structure with a high selectivity towards a crystallographic plane to form a sloped terminice with respect to the substrate; and, depositing at least one waveguide over the etched terminice and at least a portion of the substrate; wherein, the waveguide is photonically coupled to the etched active device structure to provide photonic interconnectivity for the etched active device structure.
摘要翻译：一种用于光子耦合到在衬底上形成的至少一个有源光子器件结构的方法，所述方法包括：以高选择性向结晶平面蚀刻有源器件结构，以相对于衬底形成倾斜的终端; 以及在所述蚀刻的端子和所述衬底的至少一部分上沉积至少一个波导; 其中，波导被光耦合到蚀刻的有源器件结构，以为蚀刻的有源器件结构提供光子互连。

6. 发明申请

WO2005057251A2 VERTICALLY COUPLED LARGE AREA AMPLIFIER 审中-公开
标题翻译：垂直联轴器大面积放大器
公开(公告)号：WO2005057251A2
公开(公告)日：2005-06-23
申请号：PCT/US2004040420
申请日：2004-12-02
申请人： SARNOFF CORP , MOHSENI HOOMAN , ABELES JOSEPH H , KWAKERNAAK MARTIN H , KHALFIN VICTOR BORISOVITCH
发明人： MOHSENI HOOMAN , ABELES JOSEPH H , KWAKERNAAK MARTIN H , KHALFIN VICTOR BORISOVITCH
IPC分类号： G02B20060101 , G02B6/26 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S5/50 , G02B
CPC分类号： H01S5/22 , B82Y20/00 , G02B6/122 , H01S5/1032 , H01S5/2004 , H01S5/305 , H01S5/3211 , H01S5/3215 , H01S5/323 , H01S5/34306 , H01S5/50 , H01S2301/18
摘要： A monolithic light amplification system including: an un-doped waveguide; a ridge waveguide positioned over the un-doped waveguide; and, at least a doped layer between the un-doped waveguide and ridge waveguide; wherein, the un-doped waveguide and ridge waveguide cooperate to amplify light input to the un-doped waveguide.
摘要翻译：一种单片式光放大系统，包括：未掺杂波导; 位于未掺杂波导上的脊波导; 并且至少在未掺杂波导和脊波导之间的掺杂层; 其中，未掺杂的波导和脊波导协作放大对未掺杂波导的光输入。

7. 发明专利

AU2004231581A1 Method and system for coupling waveguides 未知
公开(公告)号：AU2004231581A1
公开(公告)日：2004-11-04
申请号：AU2004231581
申请日：2004-04-23
申请人： LEE BONG HOON MR , LEE MICHAEL J MR
发明人： WHALEY RALPH , KWAKERNAAK MARTIN , CAPEWELL DAVID , ABELES JOSEPH , MALEY NAGENDRANATH , MOHSENI HOOMAN , DIMARCO LOU , YANG LIYOU
IPC分类号： G02B6/12 , G02B6/122 , G02B6/132 , G02B6/42 , G02B6/30
摘要： A method for photonically coupling to at least one active photonic device structure formed on a substrate, the method including: etching the active device structure with a high selectivity towards a crystallographic plane to form a sloped terminice with respect to the substrate; and, depositing at least one waveguide over the etched terminice and at least a portion of the substrate; wherein, the waveguide is photonically coupled to the etched active device structure to provide photonic interconnectivity for the etched active device structure.

8. 发明申请

WO2007038600A3 A SINGLE-PHOTON DETECTOR AND APPLICATIONS OF SAME 审中-公开
标题翻译：单光子检测器及其应用
公开(公告)号：WO2007038600A3
公开(公告)日：2007-11-29
申请号：PCT/US2006037679
申请日：2006-09-27
申请人： UNIV NORTHWESTERN , MOHSENI HOOMAN
发明人： MOHSENI HOOMAN
IPC分类号： H01L31/00
CPC分类号： H01L27/14643
摘要： A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/ AlInGa As/ AlGa As Sb layers, capable of spatially separating the electron and the hole of an photo-generated electron-hole pair in one layer, transporting one of the electron and the hole of the photo- generated electron-hole pair into another layer, focalizing it into a desired volume and trapping it therein, the desired volume having a dimension in a scale of nanometers to reduce its capacitance and increase the change of potential for a trapped carrier, and a nano-inj ector, capable of inj ecting carriers into the plurality of InP/ AlInGaAs/ AlGaAsSb layers, where the carrier transit time in the nano-inj ector is much shorter than the carrier recombination time therein, thereby causing a very large carrier recycling effect.
摘要翻译：一种用于光子检测的半导体光电检测器，不使用雪崩倍增，并且能够在低偏置电压下工作且无过多噪声。在一个实施例中，光电检测器包括多个InP / AlInGaAs / AlGaAs Sb层，其能够在一层中空间分离电子和空穴中的光电子 - 空穴对，传输电子和孔中的一个将光生成的电子 - 空穴对分成另一层，将其聚焦成期望的体积并将其捕获在其中，所需体积具有纳米尺度的尺寸以减小其电容并增加被捕获载体的电位变化，以及能够将载流子注入多个InP / AlInGaAs / AlGaAsSb层的纳米注入器，其中纳米注入器中的载流子传播时间比其中的载流子复合时间短得多，从而导致非常大的载流子回收效果。

9. 发明申请

WO2004109340A3 INP-BASED PHASE MODULATORS AND METHODS FOR MAKING AND USING FOR SAME 审中-公开
标题翻译：基于INP的相位调制器及其制造和使用方法
公开(公告)号：WO2004109340A3
公开(公告)日：2005-08-04
申请号：PCT/US2004014899
申请日：2004-05-13
申请人： SARNOFF CORP , MOHSENI HOOMAN
发明人： MOHSENI HOOMAN
IPC分类号： G02F1/017 , H01S5/00
CPC分类号： B82Y20/00 , G02F1/017 , G02F2001/0175
摘要： A modulator, including: an active modulator layer including a plurality of step quantum wells, wherein at least one of the plurality of step quantum wells is configured to have a leaky electron energy state; and at least one inactive layer bounding the active modulator layer.
摘要翻译：一种调制器，包括：有源调制器层，包括多个步长量子阱，其中所述多个步长量子阱中的至少一个被配置为具有漏电能量状态; 以及限定有源调制器层的至少一个非活性层。

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