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1. 发明申请

WO2008134929A1 INGAALN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND METHOD FOR MAKING THE SAME 审中-公开
标题翻译：含有碳基底板的发光装置及其制造方法
公开(公告)号：WO2008134929A1
公开(公告)日：2008-11-13
申请号：PCT/CN2008/000856
申请日：2008-04-28
申请人： LATTICE POWER (JIANGXI) CORPORATION , XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , TANG, Yingwen , ZHENG, Changda , LIU, Junlin , LIU, Weihua , WANG, Guping
发明人： XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , TANG, Yingwen , ZHENG, Changda , LIU, Junlin , LIU, Weihua , WANG, Guping
IPC分类号： H01L33/00
CPC分类号： H01L33/641 , H01L33/0079 , H01L33/32
摘要： An InGaAlN-based semiconductor light-emitting device comprises an InGaAlN-based semiconductor multilayer structure (621) and a carbon-based substrate (622) which supports the InGaAlN-based semiconductor multilayer structure (621),wherein the carbon-based substrate (622) comprises at least one carbon-based layer (101,601,201,301,517,519). This carbon-based substrate (622) has both high conductivity and low electrical resistivity.
摘要翻译：基于InGaAlN的半导体发光器件包括InGaAlN基半导体多层结构（621）和支撑InGaAlN基半导体多层结构（621）的碳基衬底（622），其中碳基衬底（622））包含至少一个碳基层（101,601,201,301,517,519）。该碳基基板（622）具有高导电性和低电阻率。

2. 发明申请

WO2010020068A1 SEMICONDUCTOR LIGHT-EMITTING DEVICES FOR GENERATING ARBITRARY COLOR 审中-公开
标题翻译：用于产生仲裁颜色的半导体发光器件
公开(公告)号：WO2010020068A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001492
申请日：2008-08-19
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , WANG, Li , LIU, Junlin , TANG, Yingwen
发明人： JIANG, Fengyi , WANG, Li , LIU, Junlin , TANG, Yingwen
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L27/156 , H01L33/0079 , H01L33/508 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting device includes a conductive substrate (320), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer (308), a p-type doped semiconductor layer (312) situated above the n-type doped semiconductor layer (308), and a MQW active layer (310) situated between the p-type and n-type doped semiconductor layer (308,312). The multilayer semiconductor structure is divided by grooves (300) to form a plurality of independent light-emitting mesas (304,306). At least one light-emitting mesa (304,306) comprises a color conversion layer (324,326).
摘要翻译：发光器件包括导电衬底（320），位于导电衬底上方的包括n型掺杂半导体层（308）的多层半导体结构，位于n型掺杂半导体层之上的p型掺杂半导体层（312）掺杂半导体层（308）和位于p型和n型掺杂半导体层（308,312）之间的MQW有源层（310）。多层半导体结构被凹槽（300）划分以形成多个独立的发光台面（304,306）。至少一个发光台面（304,306）包括颜色转换层（324,326）。

3. 发明申请

WO2009117847A1 METHOD FOR FABRICATING HIGH-POWER LIGHT-EMITTING DIODE ARRAYS 审中-公开
标题翻译：用于制造大功率发光二极管阵列的方法
公开(公告)号：WO2009117847A1
公开(公告)日：2009-10-01
申请号：PCT/CN2008/000583
申请日：2008-03-25
申请人： LATTICE POWER (JIANGXI) CORPORATION , WANG, Li , JIANG, Fengyi , TANG, Yingwen , LIU, Junlin
发明人： WANG, Li , JIANG, Fengyi , TANG, Yingwen , LIU, Junlin
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/44
摘要： A method for fabricating a high-power light-emitting diode (LED).The method includes etching grooves on a growth substrate. Thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride(InGaAlN)-based LED multilayer structures on the mesas on the growth substrate.Wherein a respective mesa supports a separate LED structures. In additions, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array.
摘要翻译：一种用于制造大功率发光二极管（LED）的方法。该方法包括在生长衬底上蚀刻凹槽。从而在生长衬底上形成台面。该方法还包括在生长衬底上的台面上制造基于铟镓铝（InGaAlN）的LED多层结构。其中相应的台面支撑单独的LED结构。此外，该方法包括将多层结构粘合到导电基底上。该方法还包括去除生长底物。此外，该方法包括在InGaAlN多层结构上沉积钝化层和电极层，其中钝化层覆盖槽的侧壁和底部。此外，该方法包括产生耦合预定数量的相邻独立LED的导电路径，从而允许LED共享公共电源并且被同时供电以形成大功率LED阵列。

4. 发明申请

WO2009046576A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A COLOR-CONVERSION STRUCTURE 审中-公开
标题翻译：具有颜色转换结构的半导体发光器件
公开(公告)号：WO2009046576A1
公开(公告)日：2009-04-16
申请号：PCT/CN2007/002945
申请日：2007-10-12
申请人： LATTICE POWER (JIANGXI) CORPORATION , WANG, Li , JIANG, Fengyi , TANG, Yingwen , LIU, Weihua
发明人： WANG, Li , JIANG, Fengyi , TANG, Yingwen , LIU, Weihua
IPC分类号： H01L33/00
CPC分类号： H01L33/508
摘要： A semiconductor light-emitting device (200) includes a substrate (202) and a semiconductor multilayer structure (204) supported by the substrate (202), wherein the semiconductor multilayer structure (204) is configured to emit light of a first color. The substrate (202) or a reflection layer (212) between the substrate (202) and the semiconductor multilayer structure (204) is substantially opaque. The device (200) also includes a planar color conversion layer (206) of a substantially constant thickness formed on the semiconductor multilayer structure (204). The color conversion layer (206) comprises a color conversion material capable of converting at least a portion of the emitted light to a second color. The color conversion layer (206) can be sufficiently hardened to withstand subsequent wafer dicing.
摘要翻译：半导体发光器件（200）包括由衬底（202）支撑的衬底（202）和半导体多层结构（204），其中半导体多层结构（204）被配置为发射第一颜色的光。衬底（202）或衬底（202）和半导体多层结构（204）之间的反射层（212）基本上是不透明的。器件（200）还包括形成在半导体多层结构（204）上的基本恒定厚度的平面颜色转换层（206）。颜色转换层（206）包括能够将至少一部分发射光转换成第二颜色的颜色转换材料。颜色转换层（206）可以被充分硬化以承受随后的晶片切割。

5. 发明申请

WO2010020070A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER 审中-公开
标题翻译：具有P型层中钝化的半导体发光器件
公开(公告)号：WO2010020070A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001494
申请日：2008-08-19
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , TANG, Yingwen , MO, Chunlan , WANG, Li
发明人： JIANG, Fengyi , TANG, Yingwen , MO, Chunlan , WANG, Li
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/145 , H01L33/0079 , H01L33/44
摘要： A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped semiconductor layer, wherein part of the first doped semiconductor layer is passivated, and wherein the passivated portion of the first doped semiconductor layer substantially insulates the first electrode from the edges of the first doped semiconductor layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped semiconductor layer and a passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.
摘要翻译：半导体发光器件包括衬底，第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层以及位于第一和第二掺杂层之间的多量子阱（MQW）有源层。该器件还包括耦合到第一掺杂半导体层的第一电极，其中部分第一掺杂半导体层被钝化，并且其中第一掺杂半导体层的钝化部分使第一电极与第一掺杂半导体层的边缘基本绝缘层，从而减少表面复合。该器件还包括耦合到第二掺杂半导体层的第二电极和基本上覆盖第一和第二掺杂半导体层，MQW有源层和第二掺杂半导体层的水平表面的一部分的侧壁的钝化层，不被第二电极覆盖。

6. 发明申请

WO2009117849A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-ELECTRODE 审中-公开
标题翻译：具有高反射OHMIC电极的半导体发光器件
公开(公告)号：WO2009117849A1
公开(公告)日：2009-10-01
申请号：PCT/CN2008/000597
申请日：2008-03-26
申请人： LATTICE POWER (JIANGXI) CORPORATION , TANG, Yingwen , WANG, Li , JIANG, Fengyi
发明人： TANG, Yingwen , WANG, Li , JIANG, Fengyi
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/405
摘要： A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer.
摘要翻译：半导体发光器件包括在导电衬底上的多层半导体结构。多层半导体结构包括位于导电衬底之上的第一掺杂半导体层，位于第一掺杂半导体层之上的第二掺杂半导体层和/或位于第一和第二掺杂半导体层之间的MQW有源层。该器件还包括在第一掺杂半导体层和导电衬底之间的反射欧姆接触金属层，其包括Ag和Ni，Ru，Rh，Pd，Au，Os，Ir和Pt中的至少一种; 加上Zn，Mg Be和Cd中的至少一种; 和多个：W，Cu，Fe，Ti，Ta和Cr。该器件还包括在反射欧姆接触金属层和导电基底之间的结合层，耦合到导电基底的第一电极和耦合到第二掺杂半导体层的第二电极。

7. 发明申请

WO2009117850A1 METHOD FOR FABRICATING HIGHLY REFLECTIVE OHMIC CONTACT IN LIGHT-EMITTING DEVICES 审中-公开
标题翻译：在发光装置中制造高反射OHMIC接触的方法
公开(公告)号：WO2009117850A1
公开(公告)日：2009-10-01
申请号：PCT/CN2008/000598
申请日：2008-03-26
申请人： LATTICE POWER (JIANGXI) CORPORATION , TANG, Yingwen , WANG, Li , JIANG, Fengyi
发明人： TANG, Yingwen , WANG, Li , JIANG, Fengyi
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.
摘要翻译：一种在发光器件中制造高反射电极的方法。在制造过程中，在生长衬底上制造多层半导体结构，其中多层半导体结构包括第一掺杂半导体层，第二掺杂半导体层和/或多量子阱（MQW）有源层。该方法还包括以下操作：在第一掺杂半导体层上形成接触辅助金属层，退火多层结构以激活第一掺杂半导体层，去除接触辅助金属层，形成反射欧姆接触金属层在所述第一掺杂半导体层上形成与所述反射欧姆接触金属层耦合的接合层，将所述多层结构接合到导电基板，去除所述生长衬底，形成耦合到所述导电衬底的第一电极，以及形成第二电极在第二掺杂半导体层上。

8. 发明申请

WO2010020067A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION LAYER 审中-公开
标题翻译：具有钝化层的半导体发光器件
公开(公告)号：WO2010020067A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001491
申请日：2008-08-19
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , LIU, Junlin , WANG, Li
发明人： JIANG, Fengyi , LIU, Junlin , WANG, Li
IPC分类号： H01L33/12
CPC分类号： H01L33/44 , H01L33/0079
摘要： A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) situated between the first and the second doped semiconductor layers. The device also includes a first electrode coupled to the first doped semiconductor layer and a second electrode coupled to the second doped semiconductor layer. The device further includes a first passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and the part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. The first passivation layer is formed through an oxidation technique. The device further includes a second passivation layer overlaying the first passivation layer.
摘要翻译：一种发光装置及其制造方法。该器件包括衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层以及位于第一和第二掺杂半导体层之间的多量子阱（MQW）。该器件还包括耦合到第一掺杂半导体层的第一电极和耦合到第二掺杂半导体层的第二电极。该器件还包括第一钝化层，其基本上覆盖第一和第二掺杂半导体层的侧壁，MQW有源层以及第二掺杂半导体层的未被第二电极覆盖的部分水平表面。第一钝化层通过氧化技术形成。该器件还包括覆盖第一钝化层的第二钝化层。

9. 发明申请

WO2010020072A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SILICONE PROTECTIVE LAYER 审中-公开
标题翻译：具有硅保护层的半导体发光器件
公开(公告)号：WO2010020072A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001496
申请日：2008-08-19
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , LIU, Junlin , WANG, Li
发明人： JIANG, Fengyi , LIU, Junlin , WANG, Li
IPC分类号： H01L33/00
CPC分类号： H01L33/44
摘要： One embodiment of the present invention provides a semiconductor light-emitting device which includes: a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, a multi-quantum-well (MQW) active layer situated between the first and the second doped semiconductor layers. The device further includes a first electrode coupled to the first doped semiconductor layer, a second electrode coupled to the second doped semiconductor layer, and a silicone protective layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.
摘要翻译：本发明的一个实施例提供一种半导体发光器件，其包括：衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层，多量子阱（MQW ）有源层，位于第一和第二掺杂半导体层之间。该器件还包括耦合到第一掺杂半导体层的第一电极，耦合到第二掺杂半导体层的第二电极和基本上覆盖第一和第二掺杂半导体层的侧壁的有机硅保护层，MQW有源层，以及未被第二电极覆盖的第二掺杂半导体层的水平表面的一部分。

10. 发明申请

WO2009117845A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION 审中-公开
标题翻译：具有双面钝化的半导体发光器件
公开(公告)号：WO2009117845A1
公开(公告)日：2009-10-01
申请号：PCT/CN2008/000581
申请日：2008-03-25
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , LIU, Junlin , WANG, Li
发明人： JIANG, Fengyi , LIU, Junlin , WANG, Li
IPC分类号： H01L33/00 , H01L23/488 , H01L27/15
CPC分类号： H01L33/44 , H01L21/6835 , H01L33/0079 , H01L33/405 , H01L2221/6835 , H01L2221/68359
摘要： A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and covers part of the horizontal surface of the second doped layer.
摘要翻译：发光器件包括衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂层上方的第二掺杂半导体层和位于第一和第二掺杂层之间的多量子阱（MQW）有源层掺杂层。该器件还包括耦合到第一掺杂层的第一电极和位于第一电极和第一掺杂层之间的除欧姆接触区域之外的区域中的第一钝化层。第一钝化层使第一电极与第一掺杂层的边缘基本绝缘，从而减少表面复合。该器件还包括耦合到第二掺杂层的第二电极和基本上覆盖第一和第二掺杂层的侧壁的第二钝化层，即MQW有源层，并且覆盖第二掺杂层的水平表面的一部分。

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