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1. 发明申请

WO2006065532A2 WAFER HEATING AND TEMPERATURE CONTROL BY BACKSIDE FLUID INJECTION 审中-公开
标题翻译：背面流体注射的加热和温度控制
公开(公告)号：WO2006065532A2
公开(公告)日：2006-06-22
申请号：PCT/US2005/043256
申请日：2005-11-29
申请人： LAM RESEARCH CORPORATION , MOORING, Ben , PARKS, John , HYMES, Diane, J.
发明人： MOORING, Ben , PARKS, John , HYMES, Diane, J.
IPC分类号： C23C16/00
CPC分类号： H01L21/67109
摘要： In one of the many embodiments, an apparatus for processing a substrate is provided which includes a substrate processing chamber where the substrate is positioned within the substrate processing chamber so the substrate at least partially separates the substrate processing chamber into a first chamber and a second chamber. The apparatus further includes a first chamber inlet configured to input a first fluid of a first temperature into the first chamber at a first pressure and a second chamber inlet configured to input a second fluid of a second temperature into the second chamber at a second pressure wherein the first pressure and the second pressure are substantially equal. The second temperature is capable of being utilized to manage substrate temperature.
摘要翻译：在许多实施例中的一个实施例中，提供了一种用于处理衬底的装置，其包括衬底处理室，其中衬底位于衬底处理室内，使得衬底至少部分地将衬底处理室分离成第一腔室和第二腔室。该装置还包括第一室入口，其构造成在第一压力下将第一温度的第一流体输入到第一室中，并且第二室入口被配置成在第二压力下将第二温度的第二流体输入到第二室中，第一压力和第二压力基本相等。第二个温度可以用来管理衬底温度。

2. 发明申请

WO2005117084A1 REACTIVE FLUID SYSTEMS FOR REMOVING DEPOSITION MATERIALS AND METHODS FOR USING SAME 审中-公开
标题翻译：用于去除沉积材料的反应性流体系统及其使用方法
公开(公告)号：WO2005117084A1
公开(公告)日：2005-12-08
申请号：PCT/US2005/016779
申请日：2005-05-13
申请人： BATTELLE MEMORIAL INSTITUTE , LAM RESEARCH CORPORATION , YONKER, Clement, R. , FULTON, John, L. , GASPAR, Daniel, J. , HYMES, Diane, J.
发明人： YONKER, Clement, R. , FULTON, John, L. , GASPAR, Daniel, J. , HYMES, Diane, J.
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , B08B7/0021 , C23F1/34 , H01L21/02052 , H01L21/32115 , H01L21/32134
摘要： The present invention generally relates to methods for processing materials. More particularly, the present invention relates to reactive fluids and uses thereof for removing deposition materials, including, but not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing.
摘要翻译：本发明一般涉及加工材料的方法。更具体地，本发明涉及反应性流体及其用于去除沉积材料的用途，包括但不限于覆盖层材料，金属，非金属，层状材料，有机物，聚合物和半导体材料。本发明可应用于诸如半导体芯片制造的商业工艺中。

3. 发明申请

WO2003078859A3 REINFORCED CHEMICAL MECHANICAL PLANARIZATION BELT 审中-公开
公开(公告)号：WO2003078859A3
公开(公告)日：2003-09-25
申请号：PCT/US2003/007389
申请日：2003-03-10
申请人： LAM RESEARCH CORPORATION
发明人： LIN, Jibing , HYMES, Diane, J.
IPC分类号： B65G15/34
摘要： A processing belt (150, 160, 170) for use in chemical mechanical planarization (CMP), is provided. The processing belt is reinforced with one of a mesh belt (154) and a woven fabric (164). The processing belt includes a polymeric material (152) encasing the mesh belt to define the processing belt. The processing belt is fabricated so that the mesh belt forms a continuous loop within the polymeric material, and the mesh belt is constructed as a grid of intersecting members (174). The intersecting members are joined at fixed joints (176) to form a rigid support structure for the processing belt.

4. 发明申请

WO2003078859A2 REINFORCED CHEMICAL MECHANICAL PLANARIZATION BELT 审中-公开
标题翻译：增强化学机械平面化皮带
公开(公告)号：WO2003078859A2
公开(公告)日：2003-09-25
申请号：PCT/US2003/007389
申请日：2003-03-10
申请人： LAM RESEARCH CORPORATION
发明人： LIN, Jibing , HYMES, Diane, J.
IPC分类号： F16G
CPC分类号： B24B37/013 , B24B37/205 , B24D11/02 , B29D29/00 , B32B2305/08 , B32B2413/00
摘要： A processing belt (150, 160, 170) for use in chemical mechanical planarization (CMP), is provided. The processing belt is reinforced with one of a mesh belt (154) and a woven fabric (164). The processing belt includes a polymeric material (152) encasing the mesh belt to define the processing belt. The processing belt is fabricated so that the mesh belt forms a continuous loop within the polymeric material, and the mesh belt is constructed as a grid of intersecting members (174). The intersecting members are joined at fixed joints (176) to form a rigid support structure for the processing belt.
摘要翻译：提供了用于化学机械平面化（CMP）的处理带（150,160,170）。加工带用网带（154）和机织织物（164）中的一个加强。处理带包括包围网带以限定处理带的聚合材料（152）。加工带被制造成使得网带在聚合物材料内形成连续的环，并且网带被构造为相交构件（174）的网格。相交构件在固定接头（176）处连接以形成用于处理带的刚性支撑结构。

5. 发明公开

EP1121205A1 METHOD AND APPARATUS FOR CLEANING LOW K DIELECTRIC AND METAL WAFER SURFACES 有权
标题翻译： METHOD FOR CLEANING介电聚合物SEMICONDUCTOR切片的表面具有低k值
公开(公告)号：EP1121205A1
公开(公告)日：2001-08-08
申请号：EP99942527.5
申请日：1999-08-26
申请人： LAM RESEARCH CORPORATION
发明人： JIANG, Linda , HYMES, Diane, J.
IPC分类号： B08B3/08 , B08B1/04 , H01L21/00
CPC分类号： H01L21/0206 , B08B1/04 , B08B3/08 , H01L21/02063 , H01L21/02074 , H01L21/67046 , Y10S134/902
摘要： Disclosed is a method for cleaning hydrophobic surfaces, such as low K dielectric organic or inorganic surfaces as well as metallization surfaces of a semiconductor wafer. The method includes: (a) applying a surfactant solution to the surface; (b) scrubbing the surface; and (c) spin-rinsing the surface of the substrate using de-ionized water to complete a removal of any contaminants from the surface. If needed, the surfactant solution can be mixed with a chemical enhancer, and the scrubbing can be performed in a brush system. The brush system may be configured to apply DI water using a through the brush (TTB) technique. The surfactant solution can be applied either using a drip technique or using the TTB technique.

6. 发明公开

EP1483182A2 REINFORCED CHEMICAL MECHANICAL PLANARIZATION BELT 审中-公开
标题翻译：加筋带化学机械平坦化
公开(公告)号：EP1483182A2
公开(公告)日：2004-12-08
申请号：EP03711516.9
申请日：2003-03-10
申请人： LAM RESEARCH CORPORATION
发明人： LIN, Jibing , HYMES, Diane, J.
IPC分类号： B65G15/34
CPC分类号： B24B37/013 , B24B37/205 , B24D11/02 , B29D29/00 , B32B2305/08 , B32B2413/00
摘要： A processing belt (150, 160, 170) for use in chemical mechanical planarization (CMP), is provided. The processing belt is reinforced with one of a mesh belt (154) and a woven fabric (164). The processing belt includes a polymeric material (152) encasing the mesh belt to define the processing belt. The processing belt is fabricated so that the mesh belt forms a continuous loop within the polymeric material, and the mesh belt is constructed as a grid of intersecting members (174). The intersecting members are joined at fixed joints (176) to form a rigid support structure for the processing belt.

7. 发明公开

EP1186022A2 METHOD AND APPARATUS FOR ENABLING CONVENTIONAL WIRE BONDING TO COPPER-BASED BOND PAD FEATURES 审中-公开
标题翻译：方法和设备传统的有线连接上铜连接的区域，以允许
公开(公告)号：EP1186022A2
公开(公告)日：2002-03-13
申请号：EP00917749.4
申请日：2000-03-06
申请人： LAM Research Corporation
发明人： LI, Hugh , HYMES, Diane, J.
IPC分类号： H01L21/60 , H01L21/311 , H01L21/3213 , B08B1/00
CPC分类号： H01L24/85 , B08B1/04 , H01L21/31111 , H01L21/32134 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/0381 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48647 , H01L2224/48747 , H01L2224/78301 , H01L2224/85181 , H01L2224/85203 , H01L2224/85207 , H01L2224/85375 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01057 , H01L2924/01072 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A method is described comprising removing an oxide from a surface and then commencing application of a passivation layer to the surface within 5 seconds of the oxide removal. The surface may be a copper surface which may further comprise a bonding pad surface. Removing the oxide may further comprise applying a solution comprising citric acid or hydrochloric acid. Applying the passivation layer may further comprise applying a solution comprising a member of the azole family where the azole family member may further comprise BTA. The method may also further comprise completely applying the passivation layer 35 seconds after commencing its application.
摘要翻译：描述了一种方法，其包括从一个表面氧化物的去除，然后将氧化物去除的5秒内开始的钝化层施加到表面上。该表面可以是一个铜表面，其可进一步包含键合焊盘表面。去除该氧化物可以包括另外的涂覆一种溶液包含柠檬酸或盐酸。施加钝化层可以包括另外的应用溶液，其包含唑类家族，其中家族唑构件可以包括另外的BTA的成员。因此，该方法可以进一步包括完全呼叫开始它的应用之后施加钝化层35秒。

8. 发明公开

EP1766669A1 REACTIVE FLUID SYSTEMS FOR REMOVING DEPOSITION MATERIALS AND METHODS FOR USING SAME 审中-公开
标题翻译：反应流体系统脱除矿材料及其使用方法
公开(公告)号：EP1766669A1
公开(公告)日：2007-03-28
申请号：EP05749663.0
申请日：2005-05-13
申请人： BATTELLE MEMORIAL INSTITUTE , LAM RESEARCH CORPORATION
发明人： YONKER, Clement, R. , FULTON, John, L. , GASPAR, Daniel, J. , HYMES, Diane, J.
IPC分类号： H01L21/311 , H01L21/321 , H01L21/3213 , C11D11/00 , B24B53/007
CPC分类号： H01L21/31116 , B08B7/0021 , C23F1/34 , H01L21/02052 , H01L21/32115 , H01L21/32134
摘要： The present invention generally relates to methods for processing materials. More particularly, the present invention relates to reactive fluids and uses thereof for removing deposition materials, including, but not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing.

9. 发明授权

EP1121205B1 METHOD FOR CLEANING LOW K DIELECTRIC POLYMER WAFER SURFACES 有权
标题翻译： METHOD FOR CLEANING介电聚合物SEMICONDUCTOR切片的表面具有低k值
公开(公告)号：EP1121205B1
公开(公告)日：2005-10-19
申请号：EP99942527.5
申请日：1999-08-26
申请人： LAM RESEARCH CORPORATION
发明人： JIANG, Linda , HYMES, Diane, J.
IPC分类号： B08B3/08 , B08B1/04 , H01L21/00
CPC分类号： H01L21/0206 , B08B1/04 , B08B3/08 , H01L21/02063 , H01L21/02074 , H01L21/67046 , Y10S134/902
摘要： Disclosed is a method for cleaning hydrophobic surfaces, such as low K dielectric organic or inorganic surfaces as well as metallization surfaces of a semiconductor wafer. The method includes: (a) applying a surfactant solution to the surface; (b) scrubbing the surface; and (c) spin-rinsing the surface of the substrate using de-ionized water to complete a removal of any contaminants from the surface. If needed, the surfactant solution can be mixed with a chemical enhancer, and the scrubbing can be performed in a brush system. The brush system may be configured to apply DI water using a through the brush (TTB) technique. The surfactant solution can be applied either using a drip technique or using the TTB technique.

10. 发明授权

EP1086191B1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR SUBSTRATES AFTER POLISHING OF COPPER FILM 有权
标题翻译：方法和设备清洁半导体衬底后的波兰DESKUPFERFILMS
公开(公告)号：EP1086191B1
公开(公告)日：2008-05-28
申请号：EP99907149.1
申请日：1999-02-18
申请人： LAM RESEARCH CORPORATION
发明人： LI, Xu , ZHAO, Yuexing , HYMES, Diane, J. , DELARIOS, John, M.
IPC分类号： C09K13/00 , C09K13/06 , C09K13/08 , C09K13/02 , C09K13/04 , H01L21/321 , H01L21/306 , C11D1/00
CPC分类号： H01L21/02074 , C09K13/00 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination. The figure illustrates a flowchart of one embodiment of the process of the present invention wherein (310) is the step of polishing a copper layer on a semiconductor substrate followed by (320) the step of placing the polished semiconductor substrate in a scrubber followed by (330) the step of scrubbing the polished semiconductor substrate and ending with (340) the step of applying an acidic cleaning solution to the polished semiconductor substrate during scrubbing.

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