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1. 发明申请

WO2012047531A2 SUBSTRATE PROCESSING SYSTEM WITH MULTIPLE PROCESSING DEVICES DEPLOYED IN SHARED AMBIENT EMVIRONMENT AND ASSOCIATED METHODS 审中-公开
标题翻译：具有多种处理设备的基板处理系统，分布在共享的环境中和相关的方法
公开(公告)号：WO2012047531A2
公开(公告)日：2012-04-12
申请号：PCT/US2011/052727
申请日：2011-09-22
申请人： LAM RESEARCH CORPORATION , HEMKER, David, J. , SHEET, Lubab, L. , MARKS, Jeffrey
发明人： HEMKER, David, J. , SHEET, Lubab, L. , MARKS, Jeffrey
IPC分类号： H01L21/302 , C23C16/00 , H01L21/306 , B05B13/02
CPC分类号： H01L21/3065 , C23C16/54 , H01L21/30604 , H01L21/308 , H01L21/67051 , H01L21/67173 , H01L21/6776 , H01L21/68764 , H01L21/68771
摘要： A plurality of substrate processing devices are disposed in a separated manner within a shared ambient environment. A conveyance device is disposed within the shared ambient environment and is defined to move a substrate through and between each of the substrate processing devices in a continuous manner. Some substrate processing devices are defined to perform dry substrate processing operations in which an energized reactive environment is created in exposure to the substrate in an absence of liquid material. Some substrate processing devices are defined to perform wet substrate processing operations in which at least one material in a liquid state is applied to the substrate. In one embodiment, a complementary pair of dry and wet substrate processing devices are disposed in the shared ambient environment in a sequential manner relative to movement of the substrate by the conveyance device.
摘要翻译：多个基板处理装置以分开的方式设置在共享的环境环境中。传送装置设置在共享的环境环境中，并被定义为以连续的方式移动基板通过每个基板处理装置之间和之间。一些基板处理装置被定义为执行干基板处理操作，其中在没有液体材料的情况下在暴露于基板时产生通电的反应性环境。一些基板处理装置被定义为执行湿基板处理操作，其中至少一种液态的材料被施加到基板。在一个实施例中，互补的一对干式和湿式衬底处理装置相对于衬底由输送装置的移动以顺序的方式设置在共享的环境环境中。

2. 发明申请

WO2007021654A2 APPARATUS FOR DEVELOPING PHOTORESIST AND METHOD FOR OPERATING THE SAME 审中-公开
标题翻译：用于开发光敏元件的设备和用于操作该元件的方法
公开(公告)号：WO2007021654A2
公开(公告)日：2007-02-22
申请号：PCT/US2006/030773
申请日：2006-08-08
申请人： LAM RESEARCH CORPORATION , BOYD, John, M. , REDEKER, Fritz, C. , HEMKER, David, J.
发明人： BOYD, John, M. , REDEKER, Fritz, C. , HEMKER, David, J.
IPC分类号： B08B3/00 , G03C5/00
CPC分类号： G03F7/30 , B08B3/04 , G03F7/3092 , H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A first proximity head is configured to define a meniscus of a photoresist developer solution on a substrate. The meniscus is to be defined between a bottom of the first proximity head and the substrate. A second proximity head is configured to define a rinsing meniscus on the substrate and remove the rinsing meniscus from the substrate. The second proximity head is positioned to follow the first proximity head relative to a traversal direction of the first and second proximity heads over the substrate. Exposure of the substrate to the meniscus of photoresist developer solution causes previously irradiated photoresist material on the substrate to be developed to render a patterned photoresist layer. The first and second proximity heads enable precise control of a residence time of the photoresist developer solution on the substrate during the development process.
摘要翻译：第一接近头配置成限定基板上的光致抗蚀剂显影剂溶液的弯月面。弯月面将被限定在第一接近头的底部和基底之间。第二接近头被构造成在基板上限定冲洗弯液面并且从基板去除冲洗弯液面。第二接近头定位成相对于衬底上的第一和第二接近头的横向方向跟随第一接近头。将衬底暴露于光致抗蚀剂显影剂溶液的弯月面导致在衬底上的先前照射的光致抗蚀剂材料被显影以形成图案化的光致抗蚀剂层。第一和第二接近头能够在显影过程中精确控制光致抗蚀剂显影剂溶液在基片上的停留时间。

3. 发明申请

WO2003057406A1 APPARATUS AND METHODS FOR CONTROLLING WAFER TEMPERATURE IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光中控制温度的设备及方法
公开(公告)号：WO2003057406A1
公开(公告)日：2003-07-17
申请号：PCT/US2002/040150
申请日：2002-12-13
申请人： LAM RESEARCH CORPORATION
发明人： BRIGHT, Nicholas , HEMKER, David, J.
IPC分类号： B24B37/04
CPC分类号： B24B37/015 , B24B37/30
摘要： Apparatus and methods control the temperature of a wafer (52) for chemical mechanical polishing operations. A wafer carrier (66) has a wafer mounting surface for positioning the wafer adjacent to a thermal energy transfer unit (64) for transferring energy relative to the wafer (52). A thermal energy detector (54) is oriented adjacent to the wafer mounting surface for detecting the temperature of the wafer (52). A controller (60) is responsive to the detector (54) for controlling the supply of thermal energy relative to the thermal energy transfer unit (64). Embodiments include defining separate areas of the wafer, providing separate sections of the thermal energy transfer unit (64) for each separate area, and separately detecting the temperature of each separate area to separately control the supply of thermal energy relative to the thermal energy transfer unit (64) associated with the separate area.
摘要翻译：设备和方法控制用于化学机械抛光操作的晶片（52）的温度。晶片载体（66）具有晶片安装表面，用于将晶片定位成与热能传递单元（64）相邻以相对于晶片（52）传递能量。热能检测器（54）定向成邻近晶片安装表面，用于检测晶片（52）的温度。控制器（60）响应于检测器（54）来控制相对于热能传递单元（64）的热能供应。实施例包括限定晶片的独立区域，为每个单独的区域提供热能传递单元（64）的分开的部分，并且分别检测每个分离区域的温度，以单独地控制相对于热能传递单元的热能供应（64）与分离区域相关联。

4. 发明申请

WO2003082522A1 APPARATUS AND METHODS FOR DETECTING TRANSITIONS OF WAFER SURFACE PROPERTIES IN CHEMICAL MECHANICAL POLISHING FOR PROCESS STATUS AND CONTROL 审中-公开
标题翻译：用于检测过程状态和控制的化学机械抛光中的表面性质的过渡的装置和方法
公开(公告)号：WO2003082522A1
公开(公告)日：2003-10-09
申请号：PCT/US2003/009421
申请日：2003-03-26
申请人： LAM RESEARCH CORPORATION
发明人： WILLIAMS, Damon V. , KISTLER, Rodney , HEMKER, David, J. , GOTKIS, Yehiel , OWCZARZ, Aleksander , MOREL, Bruno
IPC分类号： B24B49/10
CPC分类号： B24B37/005 , B24B49/10 , B24B49/14
摘要： In chemical mechanical polishing apparatus, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.
摘要翻译：在化学机械抛光装置中，晶片承载板设置有用于接收位于非常接近待抛光晶片的传感器的空腔。由抛光垫与晶片的暴露表面之间的接触所产生的能量仅传播到传感器非常短的距离，并由传感器感测，提供关于晶片的暴露表面的性质的数据以及这些属性的转换。相关方法提供了将感测能量与表面性质和转变相关联的图。相关图提供过程控制的过程状态数据。

5. 发明公开

EP1487611A1 APPARATUS AND METHODS FOR DETECTING TRANSITIONS OF WAFER SURFACE PROPERTIES IN CHEMICAL MECHANICAL POLISHING FOR PROCESS STATUS AND CONTROL 审中-公开
标题翻译：设备和检测方法的穿越晶片的表面特点，以CMP方法的过程状态和过程控制
公开(公告)号：EP1487611A1
公开(公告)日：2004-12-22
申请号：EP03716866.3
申请日：2003-03-26
申请人： LAM RESEARCH CORPORATION
发明人： KISTLER, Rodney , HEMKER, David, J. , GOTKIS, Yehiel , OWCZARZ, Aleksander , MOREL, Bruno , WILLIAMS, Damon V.
IPC分类号： B24B49/10 , B24B49/14 , H01L21/66 , B24B49/12
CPC分类号： B24B37/005 , B24B49/10 , B24B49/14
摘要： In chemical mechanical polishing apparatus, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.

6. 发明公开

EP1269276A2 PLUG AND PLAY SENSOR INTEGRATION FOR A PROCESS MODULE 有权
标题翻译：与用于处理模块“即插即用”功能传感器集成
公开(公告)号：EP1269276A2
公开(公告)日：2003-01-02
申请号：EP01918818.4
申请日：2001-03-19
申请人： LAM RESEARCH CORPORATION
发明人： HUANG, Chung-Ho , HEMKER, David, J. , LUI, Andrew
IPC分类号： G05B19/042
CPC分类号： G06F13/4081
摘要： A process chamber with a computer system that controls the process chamber is connected to one or more sensors, which are used to monitor the process in the process chamber. The sensors are connected to the computer system in a client/server relationship, in a way that allows the sensors to be hot swappable plus and play sensors. The computer system exchanges various messages with the sensors, synchronizes with the sensors, and integrates and utilizes data sent from the sensors.

7. 发明公开

EP1230665A1 PLASMA PROCESSING SYSTEM WITH DYNAMIC GAS DISTRIBUTION CONTROL 有权
标题翻译：具有动态气体供给控制器等离子体处理装置
公开(公告)号：EP1230665A1
公开(公告)日：2002-08-14
申请号：EP00980409.7
申请日：2000-11-14
申请人： Lam Research Corporation
发明人： BAILEY, Andrew, D., III , SCHOEPP, Alan, M. , HEMKER, David, J. , WILCOXSON, Mark, H.
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.

8. 发明授权

EP1230666B1 PLASMA PROCESSING SYSTEMS AND METHOD THEREFOR 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：EP1230666B1
公开(公告)日：2007-02-07
申请号：EP00982118.2
申请日：2000-11-14
申请人： LAM RESEARCH CORPORATION
发明人： BAILEY, Andrew, D., III , SCHOEPP, Alan, M. , HEMKER, David, J. , WILCOXSON, Mark, H. , KUTHI, Andras
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.

9. 发明公开

EP1230664A1 MATERIALS AND GAS CHEMISTRIES FOR PROCESSING SYSTEMS 有权
标题翻译：治疗装置
公开(公告)号：EP1230664A1
公开(公告)日：2002-08-14
申请号：EP00978613.8
申请日：2000-11-14
申请人： Lam Research Corporation
发明人： BAILEY, Andrew, D., III , SCHOEPP, Alan, M. , HEMKER, David, J. , WILCOXSON, Mark, H.
IPC分类号： H01J37/32
CPC分类号： H01J37/32467 , B05D1/62 , H01J37/32495
摘要： A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

10. 发明授权

EP1230664B1 PROCESSING SYSTEMS 有权
标题翻译：治疗装置
公开(公告)号：EP1230664B1
公开(公告)日：2008-05-07
申请号：EP00978613.8
申请日：2000-11-14
申请人： LAM RESEARCH CORPORATION
发明人： BAILEY, Andrew, D., III , SCHOEPP, Alan, M. , HEMKER, David, J. , WILCOXSON, Mark, H.
IPC分类号： H01J37/32
CPC分类号： H01J37/32467 , B05D1/62 , H01J37/32495
摘要： A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

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