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1. 发明授权

EP0840941B1 METHOD OF AND APPARATUS FOR CONTROLLING REACTIVE IMPEDANCES OF A MATCHING NETWORK CONNECTED BETWEEN AN RF SOURCE AND AN RF PLASMA PROCESSOR 失效
标题翻译：方法和设备控制无功阻抗计算A，之间的源和RF射频等离子体反应器连调整电路
公开(公告)号：EP0840941B1
公开(公告)日：2003-07-23
申请号：EP97925671.6
申请日：1997-05-23
申请人： LAM RESEARCH CORPORATION
发明人： RICHARDSON, Brett , NGO, Tuan , BARNES, Michael, S.
IPC分类号： H01J37/32 , H03H7/40
CPC分类号： H01J37/32174 , H01J37/32082 , H03H7/40

2. 发明申请

WO1997044812A1 METHOD OF AND APPARATUS FOR CONTROLLING REACTIVE IMPEDANCES OF A MATCHING NETWORK CONNECTED BETWEEN AN RF SOURCE AND AN RF PLASMA PROCESSOR 审中-公开
标题翻译：用于控制RF源和RF等离子体处理器之间连接的匹配网络的反应性抵消的方法和装置
公开(公告)号：WO1997044812A1
公开(公告)日：1997-11-27
申请号：PCT/US1997008610
申请日：1997-05-23
申请人： LAM RESEARCH CORPORATION
发明人： LAM RESEARCH CORPORATION , RICHARDSON, Brett , NGO, Tuan , BARNES, Michael, S.
IPC分类号： H01J37/32
CPC分类号： H01J37/32174 , H01J37/32082 , H03H7/40
摘要： An r.f. field is supplied by a reactive impedance element to a plasma in a vacuum plasma processing chamber. The element and source are connected via a matching network including first and second variable reactances that control loading of the source and tuning a load, including the reactive impedance element and the plasma, to the source. The values of the first and second variable reactances are changed to determine the amount the first variable reactance is to change for each unit change of the second variable reactance to attain the best match between the impedances seen looking into and out of output terminals of the r.f. source. Then the values of the first and second variable reactances are varied simultaneously based on the determination until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained.
摘要翻译：一个r.f. 场由无功阻抗元件提供给真空等离子体处理室中的等离子体。元件和源通过匹配网络连接，该匹配网络包括控制源的负载并将负载（包括无功阻抗元件和等离子体）调谐到源的第一和第二可变电抗。改变第一和第二可变电抗的值，以确定第二可变电抗的每个单位变化的第一可变电抗量的变化量，以获得看见和看出r.f的输出端之间的阻抗之间的最佳匹配。资源。然后，基于确定，第一和第二可变电抗的值同时变化，直到看到的进入和退出r.f的输出端之间的阻抗之间的最佳阻抗匹配。来源达到。

3. 发明申请

WO2008036210A2 METHODS OF AND APPARATUS FOR MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 审中-公开
标题翻译：用于测量和控制脉冲RF偏置加工中的波长电位的方法和装置
公开(公告)号：WO2008036210A2
公开(公告)日：2008-03-27
申请号：PCT/US2007/020050
申请日：2007-09-14
申请人： LAM RESEARCH CORPORATION , KUTHI, Andras , HWANG, Stephen , VETTER, James, C. , EILENSTINE, Greg , NGO, Tuan , WANG, Rongping
发明人： KUTHI, Andras , HWANG, Stephen , VETTER, James, C. , EILENSTINE, Greg , NGO, Tuan , WANG, Rongping
IPC分类号： G01R1/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.
摘要翻译：提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

4. 发明授权

EP1295316B1 INTEGRATED ELECTRONIC HARDWARE FOR WAFER PROCESSING CONTROL AND DIAGNOSTIC 有权
标题翻译：集成电子硬件晶圆处理控制和诊断
公开(公告)号：EP1295316B1
公开(公告)日：2007-03-14
申请号：EP01950693.0
申请日：2001-06-29
申请人： LAM RESEARCH CORPORATION
发明人： NGO, Tuan , KAVEH, Farro , LAM, Connie , HUANG, Chung-Ho , NI, Tuqiang , LE, Anthony, T. , SALKOW, Steven
IPC分类号： G05B19/414 , H01J37/00 , H01L21/00
CPC分类号： H01J37/32431 , G05B19/0421 , G05B2219/2208 , G05B2219/25434 , G05B2219/45031 , H01J37/32 , H01J37/32935
摘要： A central controller for use in a semiconductor manufacturing equipment integrates a plurality of controllers with an open architecture allowing real-time communication between the various control loops. The central controller includes at least one central processing unit (cpu) executing high level input output (i/o) and control algorithms and at least one integrated i/o controller providing integrated interface to sensors and control hardware. The integrated i/o controller performs basic i/o and low level control functions and communicates with the CPU through a bus to perform or enable controls of various subsystems of the semiconductor manufacturing equipment. A method for controlling a plurality of sensors and a plurality of control hardware for use in a semiconductor manufacturing equipment loads an application software onto a cpu board that is plugged in a bus. Sensors and control hardware are linked to electrical controllers that are mounted onto a single circuit board which occupies an address block in a memory space of the bus. The single circuit board is then plugged in the bus and the sensors and control hardware are controlled via the application software.

5. 发明公开

EP1269165A2 INTEGRATED FULL WAVELENGTH SPECTROMETER FOR WAFER PROCESSING 有权
标题翻译：具有集成全波长光谱仪进行晶圆加工等离子治疗设备
公开(公告)号：EP1269165A2
公开(公告)日：2003-01-02
申请号：EP01926386.2
申请日：2001-03-16
申请人： LAM RESEARCH CORPORATION
发明人： TUQIANG, NI , NGO, Tuan , HUANG, Chung-Ho , LIU, Andrew , KAVEH, Farro
IPC分类号： G01N23/20 , H01J37/32
CPC分类号： H01J37/32935 , G01N23/20 , H01J37/32972
摘要： A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.

6. 发明授权

EP1269165B1 PLASMA PROCESSING DEVICE WITH INTEGRATED FULL WAVELENGTH SPECTROMETER FOR WAFER PROCESSING 有权
标题翻译：具有集成全波长光谱仪进行晶圆加工等离子治疗设备
公开(公告)号：EP1269165B1
公开(公告)日：2011-06-01
申请号：EP01926386.2
申请日：2001-03-16
申请人： LAM RESEARCH CORPORATION
发明人： TUQIANG, NI , NGO, Tuan , HUANG, Chung-Ho , LUI, Andrew , KAVEH, Farro
IPC分类号： G01N23/20 , H01J37/32
CPC分类号： H01J37/32935 , G01N23/20 , H01J37/32972
摘要： A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.

7. 发明公开

EP1295316A2 INTEGRATED ELECTRONIC HARDWARE FOR WAFER PROCESSING CONTROL AND DIAGNOSTIC 有权
标题翻译：集成电子硬件晶圆处理控制和诊断
公开(公告)号：EP1295316A2
公开(公告)日：2003-03-26
申请号：EP01950693.0
申请日：2001-06-29
申请人： LAM RESEARCH CORPORATION
发明人： NGO, Tuan , NGO, Tuan , KAVEH, Farro , LAM, Connie , HUANG, Chung-Ho , NI, Tuqiang , LE, Anthony, T. , SALKOW, Steven
IPC分类号： H01L21/00
CPC分类号： H01J37/32431 , G05B19/0421 , G05B2219/2208 , G05B2219/25434 , G05B2219/45031 , H01J37/32 , H01J37/32935
摘要： A central controller for use in a semiconductor manufacturing equipment integrates a plurality of controllers with an open architecture allowing real-time communication between the various control loops. The central controller includes at least one central processing unit (cpu) executing high level input output (i/o) and control algorithms and at least one integrated i/o controller providing integrated interface to sensors and control hardware. The integrated i/o controller performs basic i/o and low level control functions and communicates with the CPU through a bus to perform or enable controls of various subsystems of the semiconductor manufacturing equipment. A method for controlling a plurality of sensors and a plurality of control hardware for use in a semiconductor manufacturing equipment loads an application software onto a cpu board that is plugged in a bus. Sensors and control hardware are linked to electrical controllers that are mounted onto a single circuit board which occupies an address block in a memory space of the bus. The single circuit board is then plugged in the bus and the sensors and control hardware are controlled via the application software.

8. 发明公开

EP0840941A2 METHOD OF AND APPARATUS FOR CONTROLLING REACTIVE IMPEDANCES OF A MATCHING NETWORK CONNECTED BETWEEN AN RF SOURCE AND AN RF PLASMA PROCESSOR 失效
标题翻译：方法和设备控制无功IMPEDENZEN A，之间的源和RF射频等离子体反应器连调整电路
公开(公告)号：EP0840941A2
公开(公告)日：1998-05-13
申请号：EP97925671.0
申请日：1997-05-23
申请人： LAM RESEARCH CORPORATION
发明人： RICHARDSON, Brett , NGO, Tuan , BARNES, Michael, S.
IPC分类号： H05H1 , H01J37 , H01L21 , H03H7
CPC分类号： H01J37/32174 , H01J37/32082 , H03H7/40
摘要： An r.f. field is supplied by a reactive impedance element to a plasma in a vacuum plasma processing chamber. The element and source are connected via a matching network including first and second variable reactances that control loading of the source and tuning a load, including the reactive impedance element and the plasma, to the source. The values of the first and second variable reactances are changed to determine the amount the first variable reactance is to change for each unit change of the second variable reactance to attain the best match between the impedances seen looking into and out of output terminals of the r.f. source. Then the values of the first and second variable reactances are varied simultaneously based on the determination until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained.

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