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1. 发明申请

US20040235303A1 Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy 审中-公开
标题翻译：使用光发射光谱法测定无晶圆自动清洁过程中的工艺残留物
公开(公告)号：US20040235303A1
公开(公告)日：2004-11-25
申请号：US10876442
申请日：2004-06-25
申请人： LAM RESEARCH CORPORATION
发明人： Vincent Wong , Brett C. Richardson , Andrew Lui , Scott Baldwin
IPC分类号： C23F001/00 , H01L021/306 , H01L021/302 , H01L021/461
CPC分类号： H01J37/32862 , B08B3/06 , B08B7/0035 , C23C16/4405 , H01J37/32935
摘要： A plasma processing system is provided. The plasma processing system includes a processing chamber having a gas inlet for introducing cleaning gases. The cleaning gas is optimized to remove byproducts deposited on inner surfaces of the processing chamber. The processing chamber includes a top electrode for creating a plasma from the cleaning gas to perform the cleaning process. A variable conductance meter for controlling a pressure inside the processing chamber independently of a flow rate of process gases is included. The variable conductance meter is positioned on an outlet of the chamber. An optical emission spectrometer (OES) for detecting an endpoint of the cleaning process performed in the processing chamber is included. The OES is located to detect an emission intensity in the processing chamber from the plasma. The OES is configured to trace the emission intensity. A pumping system for evacuating the processing chamber between processing operations is included.
摘要翻译：提供等离子体处理系统。等离子体处理系统包括具有用于引入清洁气体的气体入口的处理室。清洁气体被优化以除去沉积在处理室的内表面上的副产物。处理室包括用于从清洁气体产生等离子体以进行清洁处理的顶部电极。包括用于独立于处理气体的流量来控制处理室内的压力的可变电导计。可变电导率计位于腔室的出口处。包括用于检测在处理室中执行的清洁处理的端点的光发射光谱仪（OES）。 OES位于从等离子体检测处理室中的发射强度。 OES被配置为跟踪发射强度。包括用于在处理操作之间排空处理室的泵送系统。

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