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1. 发明申请

WO2010117964A3 METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE 审中-公开
标题翻译：具有减少损坏的低K电介质蚀刻方法
公开(公告)号：WO2010117964A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030008
申请日：2010-04-05
申请人： LAM RES CORP , JI BING , TAKESHITA KENJI , BAILEY ANDREW D III , HUDSON ERIC A , MORAVEJ MARYAM , SIRARD STEPHEN M , KO JUNGMIN , LE DANIEL , HEFTY ROBERT C , CHENG YU , DELGADINO GERARDO A , YEN BI-MING
发明人： JI BING , TAKESHITA KENJI , BAILEY ANDREW D III , HUDSON ERIC A , MORAVEJ MARYAM , SIRARD STEPHEN M , KO JUNGMIN , LE DANIEL , HEFTY ROBERT C , CHENG YU , DELGADINO GERARDO A , YEN BI-MING
IPC分类号： H01L21/3065 , H05H1/34
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/31138
摘要： A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
摘要翻译：通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。通过有机掩模将特征蚀刻到低k电介质层中。在低k电介质层上沉积氟碳层。氟碳层被固化。剥去有机面膜。

2. 发明申请

WO2007109464A3 METHODS FOR ETCHING A BOTTOM ANTI-REFLECTIVE COATING LAYER IN DUAL DAMASCENE APPLICATION 审中-公开
标题翻译：用于蚀刻双层DAMASCENE应用中底层抗反射涂层的方法
公开(公告)号：WO2007109464A3
公开(公告)日：2007-12-27
申请号：PCT/US2007063941
申请日：2007-03-14
申请人： APPLIED MATERIALS INC , XIAO YING , DELGADINO GERARDO A , SCHNEIDER KARSTEN
发明人： XIAO YING , DELGADINO GERARDO A , SCHNEIDER KARSTEN
IPC分类号： C03C25/68 , H01L21/461
CPC分类号： H01L21/76808 , H01L21/31138
摘要： Methods for two steps etching a BARC layer in a dual damascene structure are provided. In one embodiment, the method includes providing a substrate having vias filled with a BARC layer disposed on the substrate in an etch reactor, supplying a first gas mixture into the reactor to etch a first portion of the BARC layer filling in the vias, and supplying a second gas mixture comprising NH 3 gas into the reactor to etch a second portion of the BARC layer disposed in the vias.
摘要翻译：提供了在双镶嵌结构中蚀刻BARC层的两个步骤的方法。在一个实施例中，该方法包括在蚀刻反应器中提供具有填充有设置在衬底上的BARC层的通孔的衬底，将第一气体混合物供应到反应器中以蚀刻填充在通孔中的BARC层的第一部分，包含NH 3气体的第二气体混合物进入反应器以蚀刻设置在通孔中的BARC层的第二部分。

3. 发明申请

WO2007109522A3 METHODS FOR ETCHING A DIELECTRIC BARRIER LAYER WITH HIGH SELECTIVITY 审中-公开
标题翻译：用于蚀刻具有高选择性的介电阻挡层的方法
公开(公告)号：WO2007109522A3
公开(公告)日：2008-03-20
申请号：PCT/US2007064141
申请日：2007-03-16
申请人： APPLIED MATERIALS INC , XIAO YING , DELGADINO GERARDO A , SCHNEIDER KARSTEN
发明人： XIAO YING , DELGADINO GERARDO A , SCHNEIDER KARSTEN
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76814
摘要： Methods for etching a dielectric barrier layer with high selectivity to a dielectric bulk insulating layer are provided. In one embodiment, the method includes providing a substrate having a portion of a dielectric barrier layer exposed through a dielectric bulk insulating layer in a reactor, flowing a gas mixture containing H 2 gas, fluorine containing gas, at least an insert gas into the reactor, and etching the exposed portion of the dielectric barrier layer selectively to the dielectric bulk insulating layer.
摘要翻译：提供了对绝缘体绝缘层具有高选择性的蚀刻电介质阻挡层的方法。在一个实施例中，该方法包括提供一个衬底，该衬底具有通过反应器中的绝缘体绝缘层暴露的介电阻挡层的一部分，使包含H 2气体，含氟气体的气体混合物在至少插入气体进入反应器，并且将电介质阻挡层的暴露部分选择性地蚀刻到介电体绝缘层。

4. 发明专利

JP2010109373A Bi-layer, tri-layer mask cd control 审中-公开
标题翻译： BI-LAYER，TRI-LAYER MASK CD CONTROL
公开(公告)号：JP2010109373A
公开(公告)日：2010-05-13
申请号：JP2009251663
申请日：2009-11-02
申请人： Lam Res Corp , ラムリサーチコーポレーションLam Research Corporation
发明人： DELGADINO GERARDO A , HEFTY ROBERT C
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： H01L21/76802 , H01L21/31138 , H01L21/31144
摘要： PROBLEM TO BE SOLVED: To provide a method for controlling the critical dimension (CD) of etch features in an etching layer in a stack formed by a patterned photoresist mask, an intermediate mask layer disposed below the photoresist mask, a functionalized organic mask layer disposed below the intermediate mask layer, and an etching layer disposed below the functionalized organic mask layer. SOLUTION: The intermediate mask layer 416 is opened by selectively etching the patterned photoresist mask 420. This opening operation in a functionalized organic mask layer 412 includes a step of flowing an opening gas containing COS, for generating plasma, and for stopping flowing the opening gas. Thereafter, the etching layer 408 is etched to a desired dimension. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于控制由图案化光致抗蚀剂掩模形成的叠层中的蚀刻层中的蚀刻特征的临界尺寸（CD）的方法，设置在光致抗蚀剂掩模下方的中间掩模层，官能化有机掩模层，以及设置在官能化有机掩模层下方的蚀刻层。解决方案：通过选择性地蚀刻图案化的光致抗蚀剂掩模420来打开中间掩模层416.官能化有机掩模层412中的该打开操作包括使包含COS的开口气体流动以产生等离子体并停止流动的步骤开放气体。此后，蚀刻层408被蚀刻到期望的尺寸。版权所有（C）2010，JPO＆INPIT

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