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1. 发明公开

KR20200128449A 하프늄 옥사이드 기반 강유전체 (ferroelectric) 재료에 대한 캡핑 (capping) 층 审中-公开
公开(公告)号：KR20200128449A
公开(公告)日：2020-11-12
申请号：KR20207031549
申请日：2019-03-26
申请人： LAM RES CORP
发明人： YOON HYUNGSUK ALEXANDER , ZHU ZHONGWEI
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/3213 , H01L21/324 , H01L21/67
摘要： 기판프로세싱시스템에서강유전체하프늄옥사이드 (HfO2) 를형성하는방법은기판상에 HfO2 층을증착하는단계, HfO2 층상에캡핑 (capping) 층을증착하는단계, 강유전체 HfO2를형성하기위해 HfO2 층및 캡핑층을어닐링하는단계, 및 HfO2 층을제거하지않고캡핑층을제거하기위해캡핑층을선택적으로에칭하는단계를포함한다.

2. 发明公开

KR20200130469A 하프늄 나이트라이드 층들을 갖는 하프늄 옥사이드의 강유전체 (ferroelectric) 속성들 개질 审中-公开
公开(公告)号：KR20200130469A
公开(公告)日：2020-11-18
申请号：KR20207031548
申请日：2019-03-26
申请人： LAM RES CORP
发明人： YOON HYUNGSUK ALEXANDER , ZHU ZHONGWEI
IPC分类号： H01L29/66 , C23C16/455 , H01L21/02 , H01L21/285 , H01L21/324 , H01L21/67 , H01L29/78
摘要： 기판프로세싱시스템에서강유전체하프늄옥사이드 (HfO2) 를형성하는방법이기판상에 HfO2 층을증착하는단계, HfO2 층상에하프늄나이트라이드 (HfN) 층을증착하는단계, 및강유전체 HfO2를형성하기위해 HfO2 층및 HfN 층을어닐링하는단계를포함한다.

3. 发明申请

WO2007130630A3 METHOD AND APPARATUS FOR ISOLATED BEVEL EDGE CLEAN 审中-公开
标题翻译：用于隔离水边缘清洁的方法和装置
公开(公告)号：WO2007130630A3
公开(公告)日：2008-12-31
申请号：PCT/US2007010929
申请日：2007-05-04
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BAILEY ANDREW D III , JASON A RYDER , WILCOXSON MARK H , GASPARITSCH JEFFREY G , RANDY JOHNSON , HOFFMANN STEPHAN P
发明人： YOON HYUNGSUK ALEXANDER , BAILEY ANDREW D III , JASON A RYDER , WILCOXSON MARK H , GASPARITSCH JEFFREY G , RANDY JOHNSON , HOFFMANN STEPHAN P
IPC分类号： B08B11/02
CPC分类号： H01L21/67046 , Y10S134/902
摘要： An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.
摘要翻译：用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物底物。

4. 发明申请

WO2008027216A2 PROCESSES AND INTEGRATED SYSTEMS FOR ENGINEERING A SUBSTRATE SURFACE FOR METAL DEPOSITION 审中-公开
公开(公告)号：WO2008027216A2
公开(公告)日：2008-03-06
申请号：PCT/US2007018270
申请日：2007-08-17
申请人： LAM RES CORP , DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
发明人： DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
IPC分类号： B05D3/00 , B05D1/18 , B29C71/04 , C23C16/00
CPC分类号： H01L21/0206 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/76846 , H01L21/76849 , H01L21/76883
摘要： The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

5. 发明申请

WO2008027216A9 PROCESSES AND INTEGRATED SYSTEMS FOR ENGINEERING A SUBSTRATE SURFACE FOR METAL DEPOSITION 审中-公开
标题翻译：用于工程化金属沉积基板表面的工艺和集成系统
公开(公告)号：WO2008027216A9
公开(公告)日：2008-05-22
申请号：PCT/US2007018270
申请日：2007-08-17
申请人： LAM RES CORP , DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
发明人： DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
IPC分类号： C23C16/00
CPC分类号： H01L21/0206 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/76846 , H01L21/76849 , H01L21/76883
摘要： The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.
摘要翻译：这些实施例提供了产生金属对金属或硅 - 金属界面以提高电迁移性能，提供较低金属电阻率以及改善金属对金属或硅 - 金属的过程和集成系统铜互连的界面粘合。提供了一种制备衬底表面以在集成系统的铜表面上选择性地沉积钴合金材料薄层以提高铜互连的电迁移性能的示例性方法。该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。还提供了用于实践上述示例性方法的系统。

6. 发明申请

WO2008027214A2 METHODS AND APPARATUS FOR BARRIER INTERFACE PREPARATION OF COPPER INTERCONNECT 审中-公开
标题翻译：铜连接接口界面准备的方法和装置
公开(公告)号：WO2008027214A2
公开(公告)日：2008-03-06
申请号：PCT/US2007018250
申请日：2007-08-17
申请人： LAM RES CORP , BOYD JOHN , DORDI YEZDI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C
发明人： BOYD JOHN , DORDI YEZDI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C
IPC分类号： B05D5/12 , B05C13/02 , B05D3/00 , B29C71/04 , C23C14/00 , C23C14/32 , C23C16/00 , H05K3/00
CPC分类号： H01L21/67196 , C23C14/22 , C23C16/06 , C23C16/44 , C23C16/45544 , C23C16/52 , C23C18/1619 , C23C18/1632 , C23C18/1653 , C23C18/38 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/288 , H01L21/321 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67028 , H01L21/67161 , H01L21/67201 , H01L21/67207 , H01L21/6723 , H01L21/76807 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L21/76876 , H01L21/76879
摘要： The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect. The adhesion between the barrier layer and the copper layer can be improved by making the barrier layer metal-rich prior copper deposition and by limiting the amount of oxygen the barrier layer is exposed prior to copper deposition. Alternatively, a functionalization layer can be deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect with good adhesion between the barrier layer and the copper layer. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in an integrated system in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method also includes depositing the functionalization layer over the metallic layer in the integrated system. The method further includes depositing the copper layer in the copper interconnect structure in the integrated system after the functionalization layer is deposited over the metallic barrier layer.
摘要翻译：实施例满足了通过能够在铜互连中沉积薄且保形的阻挡层和铜层来改善电迁移并减少铜互连的应力诱导空隙的需要。阻挡层和铜层之间的粘附性可以通过在铜沉积之前使阻挡层富金属的先前铜沉积和限制阻挡层暴露的氧的量来改善。或者，功能化层可以沉积在阻挡层上，以使得铜层能够在铜互连中沉积，并且在阻挡层和铜层之间具有良好的粘合性。一种制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层的示例性方法，以帮助在集成系统中在铜互连中沉积铜层，以便改善铜互连的电迁移性能被提供。该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，其中在沉积金属阻挡层之后，将衬底在受控环境中转移和加工以防止形成金属阻挡氧化物。该方法还包括在集成系统中的金属层上沉积功能化层。该方法还包括在官能化层沉积在金属阻挡层上之后，在集成系统中的铜互连结构中沉积铜层。

7. 发明申请

WO2007038030B1 APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从底物中除去氟化聚合物的装置及其方法
公开(公告)号：WO2007038030B1
公开(公告)日：2008-01-24
申请号：PCT/US2006036139
申请日：2006-09-15
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
IPC分类号： H01J7/24 , H01L21/302
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一电线网被第一电介质层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

8. 发明申请

WO2008055007A3 METHODS OF FABRICATING A BARRIER LAYER WITH VARYING COMPOSITION FOR COPPER METALLIZATION 审中-公开
标题翻译：用于铜冶金制造不同组成的障碍层的方法
公开(公告)号：WO2008055007A3
公开(公告)日：2008-07-03
申请号：PCT/US2007081776
申请日：2007-10-18
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ
发明人： YOON HYUNGSUK ALEXANDER , REDEKER FRITZ
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/28562 , C23C16/029 , C23C16/34 , C23C16/45529 , H01L21/3141 , H01L21/318 , H01L21/76843 , H01L21/76846
摘要： Various embodiments provide improved processes and systems that produce a barrier layer with decreasing nitrogen concentration with the increase of film thickness. A barrier layer with decreasing nitrogen concentration with film thickness allows the end of barrier layer with high nitrogen concentration to have good adhesion with a dielectric layer and the end of barrier layer with low nitrogen concentration (or metal-rich) to have good adhesion with copper. An exemplary method of depositing a barrier layer on an interconnect structure is provided. The method includes (a) providing an atomic layer deposition environment, (b) depositing a barrier layer on the interconnect structure with a first nitrogen concentration during a first phase of deposition in the atomic layer deposition environment. The method further includes (c) continuing the deposition of the barrier layer on the interconnect structure with a second nitrogen concentration during a second phase deposition in the atomic layer deposition environment.
摘要翻译：各种实施方案提供改进的方法和系统，其随着膜厚度的增加产生具有降低的氮浓度的阻挡层。具有降低氮浓度的膜厚度的阻挡层允许具有高氮浓度的阻挡层的端部与电介质层和低氮浓度（或富含金属）的阻挡层的端部具有良好的粘附性以与铜具有良好的粘合性。提供了在互连结构上沉积阻挡层的示例性方法。该方法包括（a）提供原子层沉积环境，（b）在原子层沉积环境中的第一沉积阶段期间，在互连结构上沉积具有第一氮浓度的势垒层。该方法还包括（c）在原子层沉积环境中的第二相沉积期间，继续在互连结构上以第二氮浓度沉积阻挡层。

9. 发明申请

WO2007038256A3 APPARATUS FOR THE REMOVAL OF A METAL OXIDE FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从基材上除去金属氧化物的装置及其方法
公开(公告)号：WO2007038256A3
公开(公告)日：2007-06-21
申请号：PCT/US2006036959
申请日：2006-09-22
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , THIE WILLIAM , DORDI YEZDI , BAILEY ANDREW D III
发明人： YOON HYUNGSUK ALEXANDER , THIE WILLIAM , DORDI YEZDI , BAILEY ANDREW D III
IPC分类号： B23K10/00
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/67069 , H05H1/24 , H05H1/2406 , H05H1/48 , H05H2001/2418
摘要： An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.
摘要翻译：公开了一种产生等离子体以从衬底去除金属氧化物的设备。该实施例包括供电电极组件，该供电电极组件包括供电电极，第一介电层以及设置在供电电极和第一介电层之间的第一金属丝网。该实施例还包括与电源电极组件相对设置的接地电极组件，以便形成产生等离子体的空腔，当等离子体存在于空腔中时，第一电介质层被等离子体与等离子体屏蔽，腔在一端具有出口以提供等离子体以去除金属氧化物。

10. 发明申请

WO2007038514A2 APPARATUS FOR THE REMOVAL OF A SET OF BYPRODUCTS FROM A SUBSTRATE EDGE AND METHODS THEREFOR 审中-公开
标题翻译：从基板边缘去除一组副产品的装置及其方法
公开(公告)号：WO2007038514A2
公开(公告)日：2007-04-05
申请号：PCT/US2006037492
申请日：2006-09-26
申请人： LAM RES CORP , KIM YUNSANG , BAILEY III ANDREW D , YOON HYUNGSUK ALEXANDER
发明人： KIM YUNSANG , BAILEY III ANDREW D , YOON HYUNGSUK ALEXANDER
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , H01J37/321 , H01J37/32623
摘要： A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.
摘要翻译：公开了一种包括用于处理衬底的等离子体室的等离子体处理系统。该装置包括配置用于支撑基板的第一表面的卡盘。该装置还包括等离子体阻挡屏障，其相对于衬底的第二表面以间隔开的关系设置，第二表面与第一表面相对，等离子体阻挡屏障基本上屏蔽衬底的中心部分并留下环形衬底的第二表面的周边区域基本上不受等离子体阻挡屏障的屏蔽。所述设备还包括至少一个动力电极，所述动力电极与所述等离子体阻挡屏障协同工作以从等离子体气体产生约束等离子体，所述受限等离子体基本上限制在所述衬底的所述环形周边部分并且远离所述衬底的中心部分底物。

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