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1. 发明申请

WO02065512A3 PROCESS FOR ETCHING ORGANIC LOW-K MATERIALS 审中-公开
标题翻译：蚀刻有机低K材料的方法
公开(公告)号：WO02065512A3
公开(公告)日：2003-03-13
申请号：PCT/US0202926
申请日：2002-01-29
申请人： LAM RES CORP , ZHU HELEN H , BOWERS JAMES R , MOREY IAN J , BABIE WAYNE , GOSS MICHAEL
发明人： ZHU HELEN H , BOWERS JAMES R , MOREY IAN J , BABIE WAYNE , GOSS MICHAEL
IPC分类号： H01L21/311
CPC分类号： H01L21/31138
摘要： Method for etching a feature in an integrated circuit wafer with minimized effect of micromasking. The method introduces a flow of etchant gas including a fluorocarbon gas to the wafer, and uses the etchant gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to etch at least a portion of the feature in the wafer. Disassociation of the fluorocarbon into fluorine and hydrocarbon species performs two functions. The fluorine species prevents or significantly reduces sputtered hardmask components from depositing on the floor of the etched feature during etching. The hydrocarbon species acts to form a passivation layer on the sidewalls of the feature.
摘要翻译：用微蚀刻效应最小化在集成电路晶片中蚀刻特征的方法。该方法将包括碳氟化合物气体的蚀刻剂气体流引入晶片，并且使用蚀刻剂气体在晶片的至少一部分附近形成等离子体。等离子体用于蚀刻晶片中的特征的至少一部分。将碳氟化合物分解成氟和烃类具有两个功能。氟化物防止或显着减少溅射的硬掩模组分在蚀刻期间沉积在蚀刻特征的地板上。烃类起到在特征的侧壁上形成钝化层的作用。

2. 发明申请

WO2013088324A3 SILICON ON INSULATOR ETCH 审中-公开
标题翻译：绝缘子绝缘硅
公开(公告)号：WO2013088324A3
公开(公告)日：2015-08-13
申请号：PCT/IB2012057128
申请日：2012-12-10
申请人： LAM RES CORP , LAM RES AG
发明人： LI SIYI , HEFTY ROBERT , ROBSON MARK TODHUNTER , BOWERS JAMES R , AUDREY CHARLES
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/3081 , H01L21/31116
摘要： A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etchgas, wherein the silicon etch gas comprises SF6 or SiF4, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas.
摘要翻译：提供了通过在等离子体处理室中的硅氧化物层上的硅层上的氮化硅层的堆叠的方法蚀刻特征。在等离子体处理室中蚀刻氮化硅层，包括：流动氮化硅蚀刻气体; 将氮化硅蚀刻气体形成等离子体以蚀刻氮化硅层，并停止氮化硅蚀刻气体的流动。硅层包括流动硅蚀刻气体，其中硅蚀刻气体包括SF 6或SiF 4，将硅蚀刻气体形成硅并且阻止硅蚀刻气体的流动。在等离子体处理室中蚀刻氧化硅层，包括使氧化硅蚀刻气体流动，将氧化硅蚀刻气体形成等离子体，并停止氧化硅蚀刻气体的流动。

3. 发明专利

AU2002240212A1 Process for etching organic low-k materials 未知
公开(公告)号：AU2002240212A1
公开(公告)日：2002-08-28
申请号：AU2002240212
申请日：2002-01-29
申请人： LAM RES CORP
发明人： ZHU HELEN H , MOREY IAN J , BOWERS JAMES R , BABIE WAYNE , GOSS MICHAEL
IPC分类号： H01L21/311
摘要： Method for etching a feature in an integrated circuit wafer with minimized effect of micromasking. The method introduces a flow of etchant gas including a fluorocarbon gas to the wafer, and uses the etchant gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to etch at least a portion of the feature in the wafer. Disassociation of the fluorocarbon into fluorine and hydrocarbon species performs two functions. The fluorine species prevents or significantly reduces sputtered hardmask components from depositing on the floor of the etched feature during etching. The hydrocarbon species acts to form a passivation layer on the sidewalls of the feature.

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