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1. 发明申请

WO0242813A9 METHOD FOR PRODUCING AN OPTICAL WAVEGUIDE DEVICE 审中-公开
标题翻译：用于生产光波导装置的方法
公开(公告)号：WO0242813A9
公开(公告)日：2002-10-03
申请号：PCT/RU0100495
申请日：2001-11-21
申请人： LAB IONNYKH NANOTEKHNOLOGY OOO , GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFOVICH , KULESHOVA EVGENIA ANATOLIEVNA , VELIKHOV EVGENY PAVLOVICH , OLSHANSKY EVGENY DMITRIEVICH
发明人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFOVICH , KULESHOVA EVGENIA ANATOLIEVNA , VELIKHOV EVGENY PAVLOVICH , OLSHANSKY EVGENY DMITRIEVICH
IPC分类号： G02B6/13 , G02B6/134
CPC分类号： G02B6/13 , G02B6/1345
摘要： The inventive method for producing an optical waveguide device consists in forming a layer of transparent material on a carrier which capable of modifying the optical properties thereof when it is radiation-induced, radiating said layer in a predetermined path or with the aid of a template or a mask. The radiation processing of said layer is carried out by means of a particle beam. The particles are selected and accelerated in such a way that each particle when interacting with the layer material has a mass and energy sufficient for modifying the optical properties of the material through the thickness of the irradiated area and increasing the absorption factor and/or the reflection index thereof. As a result of the irradiation, the areas having modified optical properties with respect to the initial properties are formed in the layer, thereby producing a targeted device provided with optical channels. Said optical channels are embodied in non-irradiated areas of the layer which retain the initial transparency of the material. The layer of the transparent material on the carrier is formed with a thickness which is equal to or higher than the length of a projective path of said accelerated particles.
摘要翻译：用于制造光波导器件的本发明的方法在于在载体上形成透明材料层，其能够在辐射诱导时改变其光学性质，以预定的路径辐射所述层，或借助于模板或一个面具所述层的辐射处理通过粒子束进行。选择和加速颗粒，使得当与层材料相互作用时，每个颗粒具有足够的质量和能量，用于通过照射区域的厚度改变材料的光学性质并增加吸收因子和/或反射索引。作为照射的结果，在该层中形成相对于初始特性具有改变的光学特性的区域，由此产生设置有光学通道的目标器件。所述光通道被实施在保持材料的初始透明度的层的未照射区域中。载体上的透明材料层形成的厚度等于或高于所述加速颗粒的投影路径的长度。

2. 发明申请

WO0159770A8 METHOD FOR PRODUCING A MAGNETIC INFORMATION CARRIER 审中-公开
标题翻译：生产磁性信息载体的方法
公开(公告)号：WO0159770A8
公开(公告)日：2001-12-27
申请号：PCT/RU0100055
申请日：2001-02-09
申请人： OBSCHESTVO S OGRANICHENNOI OTV , GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFOVICH , MEILIKHOV EVGENY ZALMANOVICH , VELIKHOV EVGENY PAVLOVICH , BETELIN VLADIMIR BORISOVICH , KULESHOVA EGENIYA ANATOLIEVNA , OLSHANSKY EVGENY DMITRIEVICH , ARONZON BORIS ARONOVICH , KALININ ALEXANDR VIKTOROVICH
发明人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFOVICH , MEILIKHOV EVGENY ZALMANOVICH , VELIKHOV EVGENY PAVLOVICH , BETELIN VLADIMIR BORISOVICH , KULESHOVA EGENIYA ANATOLIEVNA , OLSHANSKY EVGENY DMITRIEVICH , ARONZON BORIS ARONOVICH , KALININ ALEXANDR VIKTOROVICH
IPC分类号： G11B5/84 , G11B5/855
CPC分类号： G11B5/855
摘要： The inventive method for producing a magnetic information carrier consists in forming onto the carrier (1) a regular structure, containing cognominal magnetic areas (2) used for disposing information and separated from each other by non-magnetic or weakly magnetic material. The cognominal magnetic areas (2) are formed with the aid of spatially separated groups (3) which have the same number of such areas (2). The surface of the magnetic carrier occupied by each group (3) is selected in relation to the resolution capability of a device recording and/or reproducing the information which is applied to the carrier.
摘要翻译：用于制造磁性信息载体的本发明方法包括在载体（1）上形成规则结构，该规则结构包含用于布置信息并通过非磁性或弱磁性材料彼此分离的认知磁性区域（2）。认知磁性区域（2）借助于具有相同数量的这种区域（2）的空间分离组（3）形成。由每个组（3）占据的磁性载体的表面是根据设备记录和/或再现施加到载体的信息的分辨能力来选择的。

3. 发明专利

GB2338588B Method of forming a lithographic pattern 未知
公开(公告)号：GB2338588B
公开(公告)日：2002-10-30
申请号：GB9911759
申请日：1999-05-21
申请人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH , OBSCHESTVO S ORGANICHENNOI OTV
发明人： DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH , GUROVICH BORIS ARONOVICH
IPC分类号： G03F9/00 , G03F7/20 , H01J37/317
摘要： A method of forming a lithographic pattern consists in establishing a charged beam, isolating such charged particles that have the energy dispersion falling within 0.1 and 5.0 eV, and removing such particles from the beam that have the energy dispersion lying outside said range. Then the thus-established charged beam is subjected to primary focusing until the beam divergence value of from 5.10-2 to 10-4 rad is attained, a mask having a pattern stencil is irradiated with the focused charged beam. Thereupon the charged beam that has been modulated while passing through the mask is subjected to secondary focusing in order to form on the radiation-sensitive layer under processing a lithographic pattern corresponding to the stencil of a scaled-down mask pattern.

4. 发明专利

GB2337635A Method of forming a conducting structure on a substrate 未知
公开(公告)号：GB2337635A
公开(公告)日：1999-11-24
申请号：GB9911764
申请日：1999-05-21
申请人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH
发明人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH
IPC分类号： H01L21/263 , H01L21/768
摘要： The method of forming a conducting structure 1 consists in applying to a substrate 2, a 2 to 20 mm thick layer 3 of a material transformable into a conducting one under the effect of radiation, and irradiating the layer 3 with a modulated beam of charged particles, with the result that each irradiated area of the layer is transformed into a conducting component, forming on the substrate a plurality of conducting structure elements 1 and a nonconducting component which is displaced into the substrate. The layer 3 comprises lanthanum or ytterbium hydride, uranium dioxide or gallium nitride which is transformed by the radiation into a conductive component e.g. gallium and a non-conductive component e.g. nitrogen. The substrate may be a dielectric, metallic or semiconductor material and the radiation is provided by an electron beam or ion beam.

5. 发明专利

GB2338588A Method of forming lithographic pattern 未知
公开(公告)号：GB2338588A
公开(公告)日：1999-12-22
申请号：GB9911759
申请日：1999-05-21
申请人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH
发明人： DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH
IPC分类号： G03F9/00 , G03F7/20 , H01J37/317
摘要： Method of forming a lithographic pattern comprising establishing a charged particle beam of electrons or ions from which charged particles having energies outside the range 0.1 to 5 eV are isolated and removed by using eg a Wien filter. The beam is focused by means 2 until a divergence value of between 5 x 10 -2 and 10 -4 rad is obtained. The beam is passed through a mask 3 stencilled with a pattern and focused with secondary focusing means 4 so that a lithographic pattern is formed on the radiation-sensitive layer 5. Layer 5 may be formed of oxides, hydrides or nitrides of metals. The method improves resolution of the pattern by reducing spherical and chromatic abberation.

6. 发明专利

GB2337635B Method of forming a conducting structure 未知
公开(公告)号：GB2337635B
公开(公告)日：2003-03-26
申请号：GB9911764
申请日：1999-05-21
申请人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH , OBSCHESTVO S ORGANICHENNOI OTV
发明人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH
IPC分类号： H01L21/263 , H01L21/768
摘要： The method of forming a conducting structure consists in applying to a substrate a 2 to 20 nm thick layer of a material transformable into conducting one under the effect of radiation, and irradiating the layer of the material with a modulated beam of charged particles, with the result that the material of the layer on each irradiated area thereof is transformed into a conducting component forming on the substrate a plurality of conducting structure elements, and a nonconducting component which is displaced into the substrate material.

7. 发明专利

NL1012118C2 未知
公开(公告)号：NL1012118C2
公开(公告)日：2001-09-28
申请号：NL1012118
申请日：1999-05-21
申请人： GUROVICH BORIS ARONOVICH , DMITRY IOSIFIVICH DOLGY , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , VLADIMIR VASILIEVICH RYLKOV , KIRILL EVGENIEVICH PRIKHODKO , DOMANTOVSKY ALEXANDR GRIGORIE , YAROSLAV IGOREVICH SHTROMBAKH , OLSHANSKY EVGENY DMITRIEVICH
发明人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH
IPC分类号： G03F9/00 , G03F7/20 , H01J37/317
摘要： A method of forming a lithographic pattern consists in establishing a charged beam, isolating such charged particles that have the energy dispersion falling within 0.1 and 5.0 eV, and removing such particles from the beam that have the energy dispersion lying outside said range. Then the thus-established charged beam is subjected to primary focusing until the beam divergence value of from 5.10-2 to 10-4 rad is attained, a mask having a pattern stencil is irradiated with the focused charged beam. Thereupon the charged beam that has been modulated while passing through the mask is subjected to secondary focusing in order to form on the radiation-sensitive layer under processing a lithographic pattern corresponding to the stencil of a scaled-down mask pattern.

8. 发明专利

NL1012117C2 未知
公开(公告)号：NL1012117C2
公开(公告)日：2001-08-14
申请号：NL1012117
申请日：1999-05-21
申请人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOV ALEXANDR GRIGORIEVICH , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH
发明人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV , SHTROMBAKH YAROSLAV IGOREVICH , OLSHANSKY EVGENY DMITRIEVICH
IPC分类号： H01L21/263 , H01L21/768 , H01L21/441 , H01L21/26
摘要： The method of forming a conducting structure consists in applying to a substrate a 2 to 20 nm thick layer of a material transformable into conducting one under the effect of radiation, and irradiating the layer of the material with a modulated beam of charged particles, with the result that the material of the layer on each irradiated area thereof is transformed into a conducting component forming on the substrate a plurality of conducting structure elements, and a nonconducting component which is displaced into the substrate material.

9. 发明专利

AU1764502A Method for producing an optical waveguide device 未知
公开(公告)号：AU1764502A
公开(公告)日：2002-06-03
申请号：AU1764502
申请日：2001-11-21
申请人： LAB IONNYKH NANOTEKHNOLOGY OOO
发明人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY IOSIFOVICH , KULESHOVA EVGENIA ANATOLIEVNA , VELIKHOV EVGENY PAVLOVICH , OLSHANSKY EVGENY DMITRIEVICH
IPC分类号： G02B6/13 , G02B6/134

10. 发明专利

FR2779007A1 未知
公开(公告)号：FR2779007A1
公开(公告)日：1999-11-26
申请号：FR9906508
申请日：1999-05-21
申请人： GUROVICH BORIS ARONOVICH
发明人： GUROVICH BORIS ARONOVICH , DOLGY DMITRY LOSIFIVICH , VELIKHOV EVGENY PAVLOVICH , KULESHOVA EVGENIA ANATOLIEVNA , ARONZON BORIS ARONOVICH , MEILIKHOV EVGENY ZALMANOVICH , RYAZANTSEV EVGENY PETROVICH , RYLKOV VLADIMIR VASILIEVICH , PRIKHODKO KIRILL EVGENIEVICH , DOMANTOVSKY ALEXANDR GRIGORIEV
IPC分类号： H01L21/263 , H01L21/768 , H01L21/322 , H01L23/485 , G03G13/05
摘要： The method of forming a conducting structure consists in applying to a substrate a 2 to 20 nm thick layer of a material transformable into conducting one under the effect of radiation, and irradiating the layer of the material with a modulated beam of charged particles, with the result that the material of the layer on each irradiated area thereof is transformed into a conducting component forming on the substrate a plurality of conducting structure elements, and a nonconducting component which is displaced into the substrate material.

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