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1. 发明申请

WO2008135948A1 METHOD OF CLEANING STANNANE DISTRIBUTION SYSTEM 审中-公开
标题翻译：清洗STANNANE分配系统的方法
公开(公告)号：WO2008135948A1
公开(公告)日：2008-11-13
申请号：PCT/IB2008/051744
申请日：2008-05-05
申请人： L'AIR LIQUIDE-SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , TARUTANI, Kohei , SATO, Hideyuki , HSIAO, Cheng-Fang
发明人： TARUTANI, Kohei , SATO, Hideyuki , HSIAO, Cheng-Fang
IPC分类号： B08B5/00 , B08B9/02 , C23C16/44 , H01L21/00
CPC分类号： B08B5/00 , B08B9/02
摘要： Methods for cleaning a stannane distributions system (100) A stannane distribution system connecting a stannane supply source (101) and a semiconductor manufacturing tool (102) is provided. Stannane is flown through the system, and a tin layer is formed on the components of the distribution system. This tin layer is then cleaned from the distribution system without the use of liquid cleaning chemicals.
摘要翻译：用于清洁锡烷分布系统的方法（100）提供连接锡烷供应源（101）和半导体制造工具（102）的锡烷分布系统。锡烷流经系统，在分配系统的部件上形成锡层。然后将该锡层从分配系统中清洗而不使用液体清洁化学品。

2. 发明申请

WO2012168924A1 SUPPLY APPARATUS AND METHOD OF SOLID MATERIAL GAS 审中-公开
标题翻译：供应设备和固体材料的方法
公开(公告)号：WO2012168924A1
公开(公告)日：2012-12-13
申请号：PCT/IB2012/052922
申请日：2012-06-08
申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , KIMOTO, Masahiro , YANAGITA, Tomoko , TARUTANI, Kohei , MATSUI, Ryohei
发明人： KIMOTO, Masahiro , YANAGITA, Tomoko , TARUTANI, Kohei , MATSUI, Ryohei
IPC分类号： B01J7/00 , C23C14/48 , C23C16/448 , H01L21/31
CPC分类号： C23C16/4481
摘要： A solid material gas supply apparatus and method in which solid material, which can be sublimated and supplied at a desired rate using carrier gas C, is processed into a paste or spray form by adding a solvent, and is equipped with a solid sample production means that produces solid sample S by vaporizing and removing said solvent, supply section 1 that supplies carrier gas C, dispersion section 2 that disperses the supplied carrier gas C, sample placement section 3 in which solid sample S is placed, and discharge section 4 that feeds out solid material gas G supplied from sample placement section 3.
摘要翻译：一种固体材料气体供给装置和方法，其中可以使用载气C以所需速度升华和供应的固体材料通过加入溶剂被加工成糊状或喷雾形式，并且装备有固体样品生产装置通过蒸发除去所述溶剂，供给载气C的供给部1，分散所供给的载气C的分散部2，将固体样品S配置的试样配置部3以及进料从样品放置部分3供应的固体材料气体G。

3. 发明申请

WO2021067764A1 SUPPLY SYSTEM FOR LOW VOLATILITY PRECURSORS 审中-公开
公开(公告)号：WO2021067764A1
公开(公告)日：2021-04-08
申请号：PCT/US2020/054021
申请日：2020-10-02
申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , AMERICAN AIR LIQUIDE, INC.
发明人： NAKAGAWA, Toshiyuki , OKUBO, Shingo , SUZUKI, Kazuma , SUZUKI, Ikuo , ISHIDA, Koji , KAMEOKA, Takashi , YANAGITA, Kazutaka , GOTO, Mikio , MATSUMOTO, Koji , NOZAWA, Fumikazu , KOURA, Terumasa , TARUTANI, Kohei
IPC分类号： C23C16/448 , C23C16/455
摘要： Supply system include a first vessel containing the precursor, a second vessel, a first gas conduit fluidically connecting the first vessel to the second vessel, wherein a pressure reduction device and a flow control device are fluidically mounted therein, a second gas conduit fluidically connecting the second vessel to a point of use, and a pressure gauge downstream the pressure reduction device for measuring a partial pressure of the precursor in the second vessel, wherein the partial pressure of the precursor in the second vessel at a pressure lower than the saturated vapor pressure of the precursor at the temperature of the second vessel and higher than an inlet pressure requirement of the flow control device at the point of use. Methods for using the supply system are also disclosed.

4. 发明申请

WO2019115361A1 PREPROCESSING METHOD FOR SOLID MATERIAL, AND SOLID MATERIAL PRODUCT FILLED WITH SOLID MATERIAL MANUFACTURED USING SAID SOLID MATERIAL PREPROCESSING METHOD 审中-公开
公开(公告)号：WO2019115361A1
公开(公告)日：2019-06-20
申请号：PCT/EP2018/083863
申请日：2018-12-06
申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
发明人： TARUTANI, Kohei , GIRARD, Jean-Marc , BLASCO, Nicolas , WIESE, Stefane , HUSSON, Guillaume
IPC分类号： H01L21/02 , C23C16/44 , C23C16/448 , C01G41/04
摘要： [Problem] To provide a simple solid material preprocessing method which can supply a solid material vapour from which impurities have been removed. [Solution] A preprocessing method, comprising a sintering step of heating a solid material container filled with a solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and crystallizing at least part of the solid material, and an impurity removal step of heating the solid material container filled with the solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and removing at least part of the impurities included in the solid material.

5. 发明申请

WO2018234285A1 SOLID MATERIAL CONTAINER AND SOLID MATERIAL PRODUCT WITH SOLID MATERIAL FILLED IN SOLID MATERIAL CONTAINER 审中-公开
公开(公告)号：WO2018234285A1
公开(公告)日：2018-12-27
申请号：PCT/EP2018/066208
申请日：2018-06-19
申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
发明人： TARUTANI, Kohei , GIRARD, Jean-Marc , BLASCO, Nicolas
IPC分类号： C23C14/24 , C23C16/448
摘要： To provide a solid material container that facilitates filling of a solid material and can supply more solid material vapor at a constant concentration. A solid material container 1 is a solid material container for supplying solid materials S1, S2 and S3 housed inside by evaporating the solid materials, and includes a carrier gas introduction line11, a first filling section 21 that is filled with the solid material S1, a second filling section 22 that is located in at least a part of an outer peripheryof the first filling section 21, and is filled with the solid material S2, at least one tray-shaped third filling section 23 that is disposed on the ceiling side of an interior of the solid material container 1, and a solid material lead-out line12, a carrier gas outlet portion 13 of the carrier gas introduction line 1 is provided in the first filling section 21, an inlet portion 14 of the solid material lead-out line12 is provided in the third filling section 23, and the carrier gas flows in order of the first filling section 21, the second filling section 22, and the third filling section 23.

6. 发明申请

WO2015029457A1 METHOD FOR PRODUCING PYROMELLITIC DIANHYDRIDE, PYROMELLITIC DIANHYDRIDE PRODUCED BY THE METHOD, AND APPARATUS THEREFOR 审中-公开
标题翻译：用于生产异氰酸二氢乙烯酯的方法，由该方法生产的吡喃二酸二乙醇及其装置
公开(公告)号：WO2015029457A1
公开(公告)日：2015-03-05
申请号：PCT/JP2014/004482
申请日：2014-09-01
申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , AIR LIQUIDE JAPAN LTD.
发明人： TARUTANI, Kohei , KAMEOKA, Takashi , YANAGITA, Tomoko , MATSUI, Ryohei
IPC分类号： C07D493/04 , C07C51/573
CPC分类号： C07D493/04
摘要： A method for producing a highly pure PMDA comprises at least the following steps: (1) a step of preparing a raw material solution by dissolving a raw material of a pyromellitic dianhydride in an acetic acid solvent, (2) a step of preparing a precursor pyromellitic dianhydride by recrystallizing the pyromellitic dianhydride in the prepared raw material solution and separating the acetic acid solvent, (3) a step of performing a degassing treatment on the precursor pyromellitic dianhydride by stirring the precursor pyromellitic dianhydride in a fluidized state while heating under reduced-pressure conditions, and (4) a step of taking out the pyromellitic dianhydride subjected to the degassing treatment.
摘要翻译：制备高纯度PMDA的方法至少包括以下步骤：（1）通过将均苯四酸二酐的原料溶解在乙酸溶剂中制备原料溶液的步骤，（2）制备前体的步骤通过在所制备的原料溶液中重结晶均苯四酸二酐并分离乙酸溶剂，将均苯四甲酸二酐重结晶，（3）通过在流化状态下搅拌前体1,2,4,5-苯四酸二酐，在减压下进行加热，对前体1,2,4,5-苯四酸二酐进行脱气处理的步骤，压力条件，（4）取出经脱气处理的均苯四酸二酐的工序。

7. 发明申请

WO2005080630A1 SEMICONDUCTOR PROCESSING SYSTEM AND BUBBLE TRAP 审中-公开
标题翻译：半导体加工系统和泡沫跟踪
公开(公告)号：WO2005080630A1
公开(公告)日：2005-09-01
申请号：PCT/IB2005/000169
申请日：2005-01-19
申请人： L'AIR LIQUIDE , TARUTANI, Kohei , KIMURA, Masao , NAKAGAWA, Toshiyuki , NAKAMOTO, Naoyuki
发明人： TARUTANI, Kohei , KIMURA, Masao , NAKAGAWA, Toshiyuki , NAKAMOTO, Naoyuki
IPC分类号： C23C16/448
CPC分类号： C23C16/448 , B01D19/0031 , C23C16/4402
摘要： To provide a broadly applicable semiconductor processing system and bubble trap therefor that enable accurate control of the precursor liquid flow rate. A semiconductor processing system contains a liquid feed conduit (34) that feeds precursor liquid to a processing compartment (12) using transport by a pressurized gas. A vaporizer (22) and an MFC (24) are disposed in the liquid feed conduit (34). A bubble trap (26) is disposed in the liquid feed conduit (34) upstream from and in the vicinity of the MFC (24). The bubble trap (26) has a separator compartment (44) that separates, from the precursor liquid, bubbles of the pressurized gas originating from the pressurized gas and admixed in the precursor liquid. The bottom of the separator compartment (44) is provided with a liquid inlet (46) for introduction of the precursor liquid and a liquid outlet (48) for discharge of the precursor liquid. The top of the separator compartment (44) is provided with a gas outlet (52) that discharges the gas separated from the precursor liquid.
摘要翻译：提供广泛应用的半导体处理系统及其气泡阱，其能够精确地控制前体液体流速。半导体处理系统包含使用加压气体的运输将前体液体供给到处理室（12）的液体供给导管（34）。蒸发器（22）和MFC（24）设置在液体供给管道（34）中。在MFC（24）的上游和附近，在液体供给管道（34）中设置有气泡阱（26）。气泡阱（26）具有分离室（44），该分离器隔室（44）从前体液体分离出来自加压气体的加压气体的气泡，并混合在前体液体中。分离器隔室（44）的底部设置有用于引入前体液体的液体入口（46）和用于排出前体液体的液体出口（48）。分离器隔室（44）的顶部设置有排出与前体液体分离的气体的气体出口（52）。

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