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    • 6. 发明授权
    • Thin film transistor substrate
    • 薄膜晶体管基板
    • US08350268B2
    • 2013-01-08
    • US13043267
    • 2011-03-08
    • Hyuk-Jin KimKyung-wook Kim
    • Hyuk-Jin KimKyung-wook Kim
    • H01L29/04
    • H01L29/78669G02F1/136213G02F1/136227G02F1/1368H01L27/124H01L27/1255H01L29/78678
    • A thin film transistor substrate including a thin film transistor having a drain electrode with an electrode portion, which overlaps with a semiconductor layer, and an extended portion, which extends from the electrode portion and has a portion overlapping with a storage electrode or storage electrode line. A passivation layer is arranged on the drain electrode, and it has a contact hole that partially exposes the extended portion of the drain electrode without exposing a step in the extended portion caused by the storage electrode or storage electrode line. A pixel electrode is arranged on the passivation layer and is electrically connected with the extended portion of the drain electrode through the contact hole.
    • 一种薄膜晶体管基板,包括具有与半导体层重叠的具有电极部分的漏电极的薄膜晶体管和从电极部分延伸并具有与存储电极或存储电极线重叠的部分的延伸部分 。 钝化层布置在漏电极上,并且具有部分地暴露漏电极的延伸部分的接触孔,而不会暴露由存储电极或存储电极线引起的延伸部分中的台阶。 像素电极设置在钝化层上,并通过接触孔与漏电极的延伸部分电连接。