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1. 发明授权

US06576300B1 High modulus, low dielectric constant coatings 失效
标题翻译：高模量，低介电常数涂层
公开(公告)号：US06576300B1
公开(公告)日：2003-06-10
申请号：US09528835
申请日：2000-03-20
申请人： Ivan Louis Berry, III , Kyuha Chung , Qingyuan Han , Youfan Liu , Eric Scott Moyer , Michael John Spaulding
发明人： Ivan Louis Berry, III , Kyuha Chung , Qingyuan Han , Youfan Liu , Eric Scott Moyer , Michael John Spaulding
IPC分类号： C08J718
CPC分类号： H01L21/3122 , C01B33/126 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/31695 , Y10T428/31663
摘要： Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups where the coating has been thermally cured and has a dielectric constant in the range of from about 1.1 to about 3.5, and plasma treating the coating to convert the coating into porous silica. Plasma treatment of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma treated for between about 15 and 120 seconds at a temperature less than or about 350° C. The plasma treated coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma treated coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the initial porous coating. The annealing temperature is preferably in excess of or about 350° C., and the annealing time is preferably at least or about 120 seconds. The annealed, plasma treated coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.
摘要翻译：具有改善的弹性模量的低介电常数膜。制备这种涂层的方法包括提供由包含至少2个Si-H基团的树脂制备的多孔网络涂层，其中涂层已经被热固化并且介电常数在约1.1至约3.5的范围内，等离子体处理将涂层转化成多孔二氧化硅的涂层。网络涂层的等离子体处理产生具有改进模量但具有较高介电常数的涂层。该涂层在低于或约350℃的温度下等离子体处理约15至120秒。等离子体处理的涂层可任选地退火。与初始多孔涂层相比，等离子体处理的涂层的快速热处理（RTP）降低了涂层的介电常数，同时保持了改进的弹性模量。退火温度优选超过或约350℃，退火时间优选为至少或约120秒。退火的等离子体处理的涂层的介电常数在约1.1至约2.4的范围内，并具有改进的弹性模量。

2. 发明授权

US06231989B1 Method of forming coatings 失效
标题翻译：成膜方法
公开(公告)号：US06231989B1
公开(公告)日：2001-05-15
申请号：US09197249
申请日：1998-11-20
申请人： Kyuha Chung , Eric Scott Moyer , Michael John Spaulding
发明人： Kyuha Chung , Eric Scott Moyer , Michael John Spaulding
IPC分类号： B05D304
CPC分类号： C04B41/5035 , H01L21/316 , Y10S428/901 , Y10T428/24917 , Y10T428/24926 , Y10T428/31663
摘要： A coating is formed on a substrate by depositing a solution comprising a resin containing at least 2 Si—H groups and a solvent in a manner in which at least 5 volume % of the solvent remains in the coating after deposition followed by exposing the coating to an environment comprising a basic catalyst and water at a concentration sufficient to cause condensation of the Si—H groups and evaporating the solvent from the coating to form a porous network coating. The method of the invention is particularly useful for applying low dielectric constant coatings on electronic devices.
摘要翻译：通过沉积包含含有至少2个Si-H基团和溶剂的树脂的溶液在沉积之后以至少5体积％的溶剂保留在涂层中的方式在基底上形成涂层，然后将涂层暴露于包括碱性催化剂和水的环境，其浓度足以引起Si-H基团的缩合并从涂层蒸发溶剂以形成多孔网状涂层。本发明的方法对于在电子器件上施加低介电常数涂层特别有用。

3. 发明授权

US06759133B2 High modulus, low dielectric constant coatings 失效
标题翻译：高模量，低介电常数涂层
公开(公告)号：US06759133B2
公开(公告)日：2004-07-06
申请号：US10413034
申请日：2003-04-14
申请人： Ivan Louis Berry, III , Kyuha Chung , Qingyuan Han , Youfan Liu , Eric Scott Moyer , Michael John Spaulding
发明人： Ivan Louis Berry, III , Kyuha Chung , Qingyuan Han , Youfan Liu , Eric Scott Moyer , Michael John Spaulding
IPC分类号： B32B900
CPC分类号： H01L21/3122 , C01B33/126 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/31695 , Y10T428/31663
摘要： Low dielectric constant films with improved elastic modulus. An SiO2-containing plasma treated coating is provided, the coating being formed by providing a porous network coating produced from a resin molecule containing at least 2 Si—H groups, curing the porous network coating by heating to a temperature sufficient to convert the porous network coating into a ceramic, and plasma treating the porous network coating to reduce an amount of Si—H bonds. Plasma treating the porous network coating provides a coating with improved modulus, but with a higher dielectric constant. Accordingly, the plasma treated coating can be annealed to provide an annealed, plasma treated coating having a lower dielectric constant and a comparable elastic modulus. The annealed, SiO2-containing plasma treated coating can have a dielectric constant between about 1.1 and about 3.5, and an elastic modulus greater than or about 4 GPa. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR §1.72(b).
摘要翻译：具有改善的弹性模量的低介电常数膜。提供含SiO 2等离子体处理的涂层，通过提供由含有至少2个Si-H基团的树脂分子产生的多孔网络涂层形成涂层，通过加热至足以将多孔网络涂覆到陶瓷中，并且等离子体处理多孔网络涂层以减少Si-H键的量。处理多孔网络涂层的等离子体处理提供了具有改进模量但具有较高介电常数的涂层。因此，等离子体处理的涂层可以退火以提供具有较低介电常数和可比的弹性模量的退火等离子体处理的涂层。退火的含SiO 2的等离子体处理的涂层的介电常数可以在约1.1至约3.5之间，弹性模量大于或约4GPa。要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。 37 CFR§1.72（b）。

4. 发明申请

US20090032901A1 Method of curing hydrogen silsesquioxane and densification in nano-scale trenches 审中-公开
标题翻译：固化氢倍半硅氧烷和纳米级沟槽致密化的方法
公开(公告)号：US20090032901A1
公开(公告)日：2009-02-05
申请号：US11919109
申请日：2006-06-12
申请人： Wei Chen , Byung Keun Hwang , Jae-Kyun Lee , Eric Scott Moyer , Michael John Spaulding , Sheng Wang
发明人： Wei Chen , Byung Keun Hwang , Jae-Kyun Lee , Eric Scott Moyer , Michael John Spaulding , Sheng Wang
IPC分类号： H01L21/762 , H01L23/58
CPC分类号： H01L21/3124 , H01L21/02134 , H01L21/02282 , H01L21/02337 , H01L21/316
摘要： Trenches in a semiconductor substrate are filled by (i) dispensing a film forming material on the semiconductor substrate and into the trenches; (ii) curing the dispensed film forming material in the presence of an oxidant at a first low temperature for a first predetermined period of time; (iii) curing the dispensed film forming material in the presence of an oxidant at a second low temperature for a second predetermined period of time; (iv) curing the dispensed film forming material in the presence of an oxidant at a third high temperature for a third predetermined period of time; and (v) forming filled oxide trenches in the semiconductor substrate. The film forming material is hydrogen silsesquioxane.
摘要翻译：通过（i）在半导体衬底上分配成膜材料并进入沟槽来填充半导体衬底中的沟槽; （ii）在第一低温下在氧化剂存在下固化所分配的成膜材料持续第一预定时间段; （iii）在第二低温下在氧化剂存在下固化所分配的成膜材料持续第二预定时间段; （iv）在第三高温下在氧化剂存在下固化分配的成膜材料持续第三预定时间; 和（v）在半导体衬底中形成填充的氧化物沟槽。成膜材料是氢倍半硅氧烷。

5. 发明申请

US20120252920A1 Stabilization Of Silsesquioxane Resins 失效
标题翻译：倍半硅氧烷树脂的稳定化
公开(公告)号：US20120252920A1
公开(公告)日：2012-10-04
申请号：US13513588
申请日：2010-12-02
申请人： Andrew MacMillan , Eric Scott Moyer , Michael Robert Reiter , Kasumi Takeuchi , Sheng Wang , Craig Rollin Yeakle
发明人： Andrew MacMillan , Eric Scott Moyer , Michael Robert Reiter , Kasumi Takeuchi , Sheng Wang , Craig Rollin Yeakle
IPC分类号： C09D183/00 , C09K3/00
CPC分类号： C08L83/06 , C08G77/14 , C08G77/20 , C08G77/70 , C08G77/80 , C08K5/15
摘要： Disclosed is silsesquioxane resin composition that contains a free radical curable functional group that is stabilized with a hydrophilic inhibitor. The hydrophilic inhibitor that has the capability to scavenge free radicals such as ascorbic acid or salicylic acid is used to stabilize the resin. The resins are useful in semiconductor formation such as for anti-reflective coatings, hardmasks or photoresist layers.
摘要翻译：公开了含有由亲水性抑制剂稳定的自由基固化性官能团的倍半硅氧烷树脂组合物。使用具有清除游离基如抗坏血酸或水杨酸的能力的亲水性抑制剂来稳定树脂。树脂可用于半导体形成，例如用于抗反射涂层，硬掩模或光致抗蚀剂层。

6. 发明申请

US20120123135A1 Method And Materials For Reverse Patterning 有权
标题翻译：反向图案的方法和材料
公开(公告)号：US20120123135A1
公开(公告)日：2012-05-17
申请号：US13386514
申请日：2010-06-22
申请人： Michael L. Bradford , Eric Scott Moyer , Kasumi Takeuchi , Sheng Wang , Craig Rollin Yeakle
发明人： Michael L. Bradford , Eric Scott Moyer , Kasumi Takeuchi , Sheng Wang , Craig Rollin Yeakle
IPC分类号： B29B13/08 , B29C33/38 , B29C59/16 , C07F7/18
CPC分类号： C08G77/18 , C08L83/04 , C09D183/04 , H01L21/02137 , H01L21/02282 , H01L21/0337
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译：将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。随后，使用包含CF 4的水性碱性剥离剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，暴露光致抗蚀剂的整个顶表面。然后，含有O 2的第二反应离子蚀刻配方蚀刻掉光致抗蚀剂。结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。可选地，新图案可以被转移到下层中。

7. 发明授权

US08785113B2 Method and materials for reverse patterning 失效
标题翻译：用于反向图案化的方法和材料
公开(公告)号：US08785113B2
公开(公告)日：2014-07-22
申请号：US13386502
申请日：2010-06-22
申请人： Michael L. Bradford , Eric Scott Moyer , Sheng Wang
发明人： Michael L. Bradford , Eric Scott Moyer , Sheng Wang
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , C08G77/04 , G03F7/405 , H01L21/02126 , H01L21/02216 , H01L21/3122
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译：将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。随后，含有CF4以将“硅树脂”回蚀刻到光致抗蚀剂材料的顶部的反应离子蚀刻配方，暴露有机基光致抗蚀剂的整个顶表面。然后，第二反应离子蚀刻配方含有O 2以蚀刻掉有机光致抗蚀剂。结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。可选地，新图案可以被转移到下层中。

8. 发明授权

US08524439B2 Silsesquioxane resin systems with base additives bearing electron-attracting functionalities 有权
标题翻译：倍半硅氧烷树脂体系，具有电子吸引功能的基础添加剂
公开(公告)号：US08524439B2
公开(公告)日：2013-09-03
申请号：US12304263
申请日：2007-06-27
申请人： Sanlin Hu , Eric Scott Moyer
发明人： Sanlin Hu , Eric Scott Moyer
IPC分类号： G03F7/039
CPC分类号： C08K5/5435
摘要： A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.
摘要翻译：含有（a）含有HSiO3 / 2单元和RSiO3 / 2单元的倍半硅氧烷树脂的倍半硅氧烷基组合物，其中： R是酸解离基团，和（b）7-二乙基氨基-4-甲基香豆素。基于倍半硅氧烷的组合物可用作在衬底上形成图案特征的正性抗蚀剂组合物，特别适用于193nm和157nm多层（即双层）光刻应用。

9. 发明申请

US20130189495A1 Nanoscale Photolithography 审中-公开
标题翻译：纳米级光刻
公开(公告)号：US20130189495A1
公开(公告)日：2013-07-25
申请号：US13877227
申请日：2011-11-07
申请人： Peng-Fei Fu , Lingjie Jay Guo , Eric Scott Moyer , Carlos Pina-Hernandez
发明人： Peng-Fei Fu , Lingjie Jay Guo , Eric Scott Moyer , Carlos Pina-Hernandez
IPC分类号： B05D1/36
CPC分类号： B05D1/36 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/165 , G03F7/405 , Y10T428/24479 , Y10T428/24612
摘要： A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods.
摘要翻译：描述了一种可以减小带有表面羟基的图案结构的特征尺寸的简单实用的方法。图案化结构可以通过任何图案化技术获得，例如光刻，电子束光刻，纳米压印光刻。该方法包括：（1）通过处理胺剂，优选环状化合物，首先将羟基或硅烷醇富含表面转化为富含胺的表面; （2）在图案化结构的顶部涂覆环氧树脂材料; （3）通过表面引发聚合施加热量时形成额外的层; （4）施加胺偶联剂以再生富含胺的表面; （5）在图案化结构的顶部涂覆环氧树脂材料以形成下一层; （6）重复步骤4和5以形成多层; 该方法允许制造通过常规光刻方法难以达到的各种图案和接触孔的特征尺寸。

10. 发明授权

US08263312B2 Antireflective coating material 失效
标题翻译：防反射涂料
公开(公告)号：US08263312B2
公开(公告)日：2012-09-11
申请号：US12160325
申请日：2006-12-07
申请人： Peng-Fei Fu , Eric Scott Moyer
发明人： Peng-Fei Fu , Eric Scott Moyer
IPC分类号： G03F7/00
CPC分类号： G03F7/091 , G03F7/0752 , Y10T428/31663
摘要： Antireflective coatings comprising (i) a silsesquioxane resin having the formula (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p=1; (ii) a polyethylene oxide fluid; and (iii) a solvent; and a method of forming said antireflective coatings on an electronic device.
摘要翻译：抗反射涂层，其包含（i）具有式（PhSiO（3-x）/ 2（OH）x）mHSiO（3-x）/ 2（OH）x）n（MeSiO（3-x）/ 2 OH）x）p，其中Ph是苯基，Me是甲基，x具有0,1或2的值; m的值为0.01〜0.99，n为0.01〜0.99，p为0.01〜0.99，m + n + p = 1。（ii）聚环氧乙烷流体; 和（iii）溶剂; 以及在电子设备上形成所述抗反射涂层的方法。

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