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1. 发明申请

US20130274471A1 COMPOUND FOR ORGANIC PHOTOELECTRIC DEVICE, ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：用于有机光电装置的组合物，包括其的有机光电装置和包括其的显示装置
公开(公告)号：US20130274471A1
公开(公告)日：2013-10-17
申请号：US13915802
申请日：2013-06-12
申请人： Kyu-Yeon IN , Myeong-Soon KANG , Ho-Kuk JUNG , Nam-Soo KIM , Eui-Su KANG , Mi-Young CHAE , Jin-Seong PARK
发明人： Kyu-Yeon IN , Myeong-Soon KANG , Ho-Kuk JUNG , Nam-Soo KIM , Eui-Su KANG , Mi-Young CHAE , Jin-Seong PARK
IPC分类号： H01L51/00
CPC分类号： H01L51/0054 , C07D403/10 , C07D413/10 , C07D417/04 , C07D417/10 , C09B1/00 , C09B57/00 , C09B57/001 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1033 , C09K2211/1037 , C09K2211/1044 , C09K2211/1048 , C09K2211/1059 , C09K2211/1096 , H01L51/0052 , H01L51/0058 , H01L51/0067 , H01L51/007 , H01L51/0071 , H01L51/0072 , H01L51/5012 , H01L51/5072 , H01L2251/308 , H05B33/10
摘要： A compound for an organic photoelectric device, an organic photoelectric device including the same, and a display device including the same the compound being represented by the following Chemical Formula 1:
摘要翻译：用于有机光电装置的化合物，包含该有机光电装置的有机光电装置和包含该化合物的显示装置，化合物由以下化学式1表示：

2. 发明申请

US20110095274A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110095274A1
公开(公告)日：2011-04-28
申请号：US12829139
申请日：2010-07-01
申请人： Hyun-Joong CHUNG , Jin-Seong PARK , Jong-Han JEONG , Jae-Kyeong JEONG , Yeon-Gon MO , Min-Kyu KIM , Tae-Kyung AHN , Hui-Won YANG , Kwang-Suk KIM , Eun-Hyun KIM , Jae-Wook KANG , Jae-Soon IM
发明人： Hyun-Joong CHUNG , Jin-Seong PARK , Jong-Han JEONG , Jae-Kyeong JEONG , Yeon-Gon MO , Min-Kyu KIM , Tae-Kyung AHN , Hui-Won YANG , Kwang-Suk KIM , Eun-Hyun KIM , Jae-Wook KANG , Jae-Soon IM
IPC分类号： H01L51/52 , H01L51/56 , H01L33/00
CPC分类号： H01L27/3248 , H01L27/1225 , H01L27/3258 , H01L27/3262 , H01L29/66969 , H01L29/7869 , H01L51/52 , H01L51/5237 , H01L51/56 , H01L2227/323 , H01L2251/5346
摘要： An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.
摘要翻译：公开了一种有机发光显示装置，其可被配置为防止水分或氧气从外部穿透有机发光显示装置。进一步公开了易于应用于大型显示装置和/或可容易地批量生产的有机发光显示装置。另外公开了一种制造有机发光显示装置的方法。有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

3. 发明申请

US20100181563A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法以及具有该薄膜晶体管的平板显示器件
公开(公告)号：US20100181563A1
公开(公告)日：2010-07-22
申请号：US12690149
申请日：2010-01-20
申请人： Min-Kyu KIM , Jin-Seong PARK , Tae-Kyung AHN , Hyun-Joong CHUNG
发明人： Min-Kyu KIM , Jin-Seong PARK , Tae-Kyung AHN , Hyun-Joong CHUNG
IPC分类号： H01L29/227 , H01L51/52 , H01L21/34
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3262
摘要： A thin film transistor using an oxide semiconductor as an active layer, and its method of manufacture. The thin film transistor includes: a substrate; an active layer formed of an oxide semiconductor; a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the oxide semiconductor; a gate electrode formed on the gate insulating layer; an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer; and source and drain electrodes connected to the active layer through the contact holes. Since the source and drain electrodes are not overlapped with the gate electrode, parasitic capacitance between the source and drain electrodes and the gate electrode is minimized. Since the gate insulating layer is formed of dielectric having a high etching selectivity with respect to oxide semiconductor, the active layer is not deteriorated.
摘要翻译：使用氧化物半导体作为活性层的薄膜晶体管及其制造方法。薄膜晶体管包括：基板; 由氧化物半导体形成的有源层; 由有源层上的电介质形成的栅极绝缘层，所述电介质具有相对于所述氧化物半导体为20〜100:1的蚀刻选择性; 形成在所述栅极绝缘层上的栅电极; 绝缘层，形成在包括所述栅电极的所述基板上，并具有露出所述有源层的接触孔; 并且源极和漏极通过接触孔连接到有源层。由于源极和漏极不与栅电极重叠，所以源电极和漏极之间的寄生电容和栅电极最小化。由于栅极绝缘层由相对于氧化物半导体具有高蚀刻选择性的电介质形成，所以有源层不会劣化。

4. 发明申请

US20110193083A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示器件
公开(公告)号：US20110193083A1
公开(公告)日：2011-08-11
申请号：US13091614
申请日：2011-04-21
申请人： Min-Kyu KIM , Jong-Han JEONG , Tae-Kyung AHN , Jae-Kyeong JEONG , Yeon-Gon MO , Jin-Seong PARK , Hyun-Joong CHUNG , Kwang-Suk KIM , Hui-Won YANG
发明人： Min-Kyu KIM , Jong-Han JEONG , Tae-Kyung AHN , Jae-Kyeong JEONG , Yeon-Gon MO , Jin-Seong PARK , Hyun-Joong CHUNG , Kwang-Suk KIM , Hui-Won YANG
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869 , H01L29/78606
摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
摘要翻译：使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

5. 发明申请

US20130220530A1 METHOD OF TRANSFERRING GRAPHENE 有权
标题翻译：传输石墨的方法
公开(公告)号：US20130220530A1
公开(公告)日：2013-08-29
申请号：US13659355
申请日：2012-10-24
申请人： Kuanping GONG , Lijie CI , Sung-Hee AHN , Jin-Seong PARK , Byeong-Yeol KIM
发明人： Kuanping GONG , Lijie CI , Sung-Hee AHN , Jin-Seong PARK , Byeong-Yeol KIM
IPC分类号： B32B38/10 , B32B38/00
CPC分类号： B32B38/10 , B32B37/06 , B32B38/162 , C01B32/186 , C01B32/194 , C25F5/00
摘要： A method of transferring graphene includes depositing graphene on a side of at least one metal substrate to provide a metal substrate-graphene layer, stacking a target substrate on a side of the metal substrate-graphene layer to provide a stacked structure in which a side of the target substrate faces the graphene layer, and exposing the stacked structure to an electrolysis bath to remove the metal substrate and transfer the graphene onto the side of the target substrate.
摘要翻译：转移石墨烯的方法包括在至少一个金属基底的侧面上沉积石墨烯以提供金属基底 - 石墨烯层，在金属基底 - 石墨烯层的一侧堆叠目标基底以提供一种堆叠结构，目标衬底面向石墨烯层，并将堆叠结构暴露于电解槽以除去金属衬底并将石墨烯转移到目标衬底侧。

6. 发明申请

US20090166636A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE TFT 有权
标题翻译：薄膜晶体管，其制造方法以及具有TFT的有机发光二极管显示装置
公开(公告)号：US20090166636A1
公开(公告)日：2009-07-02
申请号：US12341064
申请日：2008-12-22
申请人： Jin-Seong PARK , Yeon-Gon Mo , Hye-Dong Kim
发明人： Jin-Seong PARK , Yeon-Gon Mo , Hye-Dong Kim
IPC分类号： H01L29/786 , H01L21/336 , H01L33/00
CPC分类号： H01L29/78675 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L29/66757 , H01L29/78603
摘要： A thin film transistor (TFT), a method of fabricating the same, and display device having the TFT of which the TFT includes a metal catalyst layer disposed on a substrate, a semiconductor layer disposed on the metal catalyst layer, a gate insulating layer disposed on the entire surface of the substrate, a gate electrode disposed on the gate insulating layer at a position corresponding to the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes disposed on the interlayer insulating layer and connected to the semiconductor layer, wherein the metal catalyst layer includes one of carbon, nitrogen, and halogen. The thin film transistor includes a poly-Si layer that may be formed to a smaller thickness than in conventional deposition methods thereby producing a TFT in which the remaining amount of metal catalyst in a semiconductor layer is reduced.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及具有TFT的TFT的显示装置，TFT包括设置在基板上的金属催化剂层，设置在金属催化剂层上的半导体层，设置在栅极绝缘层在基板的整个表面上，在对应于半导体层的位置处设置在栅极绝缘层上的栅极电极，设置在基板的整个表面上的层间绝缘层，以及设置在层间绝缘层上的源极和漏极并连接到半导体层，其中金属催化剂层包括碳，氮和卤素中的一种。薄膜晶体管包括可以形成为比常规沉积方法更小的厚度的多晶硅层，从而制造其中半导体层中的金属催化剂的剩余量减少的TFT。

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