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    • 2. 发明授权
    • Photoelectric cross-connect system
    • 光电交叉连接系统
    • US07412164B2
    • 2008-08-12
    • US10425699
    • 2003-04-29
    • Jeong-Seok ChoiYun-Je OhJun-Ho KohChang-Hyun LeeByung-Jik KimJeong-Rok Park
    • Jeong-Seok ChoiYun-Je OhJun-Ho KohChang-Hyun LeeByung-Jik KimJeong-Rok Park
    • H04B10/00
    • H04L1/22
    • A photoelectric cross-connect system for an optical-communication system minimizes service recovery time when an error is generated. A plurality of nodes are connected by an optical-transmission line wherein each nodes automatically recognizes a data rate of an input signal and communicates over a redundant channel with an adjacent node when there is a certain type of error. An optical-receiving unit receives an optical signal performs O/E conversion. A main optical-transmitting unit recovers clock and data signals according to the converted signal and sets a data rate according to the converted signal for subsequent transmission; a redundant optical-transmitting unit recovers a clock and data according to the converted signal and sets a data rate according to the converted signal for subsequent transmission A switch provides selectively connection state between the optical-receiving unit and the main optical-transmitting unit and between the optical-receiving unit and the redundant optical-transmitting unit.
    • 用于光通信系统的光电交叉连接系统在产生错误时将服务恢复时间最小化。 多个节点通过光传输线连接,其中每个节点自动识别输入信号的数据速率,并且当存在某种类型的错误时,通过冗余信道与相邻节点进行通信。 光接收单元接收执行O / E转换的光信号。 主光传输单元根据转换的信号恢复时钟和数据信号,并根据转换的信号设置数据速率用于随后的传输; 冗余光传输单元根据转换的信号恢复时钟和数据,并根据转换的信号设置数据速率用于后续发送。A交换机选择性地提供光接收单元和主光传输单元之间的连接状态,以及 光接收单元和冗余光发射单元。
    • 10. 发明授权
    • Nonvolatile memory devices
    • 非易失性存储器件
    • US08629489B2
    • 2014-01-14
    • US13357350
    • 2012-01-24
    • Chang-Hyun LeeJung-Dal Choi
    • Chang-Hyun LeeJung-Dal Choi
    • H01L29/76
    • H01L27/1052G11C16/0483H01L27/11521H01L27/11524
    • A nonvolatile memory device includes a string selection transistor, a plurality of memory cell transistors, and a ground selection transistor electrically connected in series to the string selection transistor and to the pluralities of memory cell transistors. First impurity layers are formed at boundaries of the channels and the source/drain regions of the memory cell transistors. The first impurity layers are doped with opposite conductivity type impurities relative to the source/drain regions of the memory cell transistors. Second impurity layers are formed at boundaries between a channel and a drain region of the string selection transistor and between a channel and a source region of the ground selection transistor. The second impurity layers are doped with the same conductivity type impurities as the first impurity layers and have a higher impurity concentration than the first impurity layers.
    • 非易失性存储器件包括串选择晶体管,多个存储单元晶体管和与串选择晶体管和多个存储单元晶体管串联电连接的接地选择晶体管。 在存储单元晶体管的沟道和源极/漏极区的边界处形成第一杂质层。 相对于存储单元晶体管的源/漏区,第一杂质层掺杂有相反导电类型的杂质。 第二杂质层形成在串选择晶体管的沟道和漏极区之间的边界处,并且在地选择晶体管的沟道和源极区之间形成。 第二杂质层掺杂有与第一杂质层相同的导电类型杂质,并且具有比第一杂质层更高的杂质浓度。