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1. 发明授权

US08452919B2 Advanced memory device having improved performance, reduced power and increased reliability 有权
标题翻译：先进的存储器件具有改进的性能，降低的功率和增加的可靠性
公开(公告)号：US08452919B2
公开(公告)日：2013-05-28
申请号：US13567357
申请日：2012-08-06
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G06F13/00
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要翻译：具有改进性能，降低功耗和增加可靠性的高级内存。存储器件包括存储器阵列，用于接收命令和相关联的数据的接收器，用于对接收到的命令执行错误控制检查的差错控制编码电路以及用于防止相关联的数据被响应地写入存储器阵列的数据屏蔽电路对错误控制编码电路检测接收到的命令中的错误。另一个存储器件包括可编程序序。另一存储器件包括快速退出自刷新模式。另一种存储装置包括由特征装置控制的自动刷新功能。另一存储器件包括由存储器件的特性控制的自动刷新功能。

2. 发明申请

US20110055671A1 ADVANCED MEMORY DEVICE HAVING IMPROVED PERFORMANCE, REDUCED POWER AND INCREASED RELIABILITY 有权
标题翻译：具有改进性能，降低功耗和提高可靠性的高级存储设备
公开(公告)号：US20110055671A1
公开(公告)日：2011-03-03
申请号：US12553400
申请日：2009-09-03
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G11C7/00 , G11C8/18 , H03M13/09 , G06F11/07 , G06F11/10
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要翻译：具有改进性能，降低功耗和增加可靠性的高级内存。存储器件包括存储器阵列，用于接收命令和相关联的数据的接收器，用于对接收到的命令执行错误控制检查的差错控制编码电路以及用于防止相关联的数据被响应地写入存储器阵列的数据屏蔽电路对错误控制编码电路检测接收到的命令中的错误。另一个存储器件包括可编程序序。另一存储器件包括快速退出自刷新模式。另一种存储装置包括由特征装置控制的自动刷新功能。另一存储器件包括由存储器件的特性控制的自动刷新功能。

3. 发明申请

US20120300563A1 ADVANCED MEMORY DEVICE HAVING IMPROVED PERFORMANCE, REDUCED POWER AND INCREASED RELIABILITY 有权
标题翻译：具有改进性能，降低功耗和提高可靠性的高级存储设备
公开(公告)号：US20120300563A1
公开(公告)日：2012-11-29
申请号：US13567353
申请日：2012-08-06
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G11C7/00
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要翻译：具有改进性能，降低功耗和增加可靠性的高级内存。存储器件包括存储器阵列，用于接收命令和相关联的数据的接收器，用于对接收到的命令执行错误控制检查的差错控制编码电路以及用于防止相关联的数据被响应地写入存储器阵列的数据屏蔽电路对错误控制编码电路检测接收到的命令中的错误。另一个存储器件包括可编程序序。另一存储器件包括快速退出自刷新模式。另一种存储装置包括由特征装置控制的自动刷新功能。另一存储器件包括由存储器件的特性控制的自动刷新功能。

4. 发明授权

US08659959B2 Advanced memory device having improved performance, reduced power and increased reliability 有权
标题翻译：先进的存储器件具有改进的性能，降低功率和增加可靠性
公开(公告)号：US08659959B2
公开(公告)日：2014-02-25
申请号：US13567353
申请日：2012-08-06
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G11C7/00
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要翻译：具有改进性能，降低功耗和增加可靠性的高级内存。存储器件包括存储器阵列，用于接收命令和相关联的数据的接收器，用于对接收到的命令执行错误控制检查的差错控制编码电路以及用于防止相关联的数据被响应地写入存储器阵列的数据屏蔽电路对错误控制编码电路检测接收到的命令中的错误。另一个存储器件包括可编程序序。另一存储器件包括快速退出自刷新模式。另一种存储装置包括由特征装置控制的自动刷新功能。另一存储器件包括由存储器件的特性控制的自动刷新功能。

5. 发明申请

US20120300570A1 ADVANCED MEMORY DEVICE HAVING IMPROVED PERFORMANCE, REDUCED POWER AND INCREASED RELIABILITY 有权
公开(公告)号：US20120300570A1
公开(公告)日：2012-11-29
申请号：US13567357
申请日：2012-08-06
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G11C11/402
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.

6. 发明授权

US08307270B2 Advanced memory device having improved performance, reduced power and increased reliability 有权
标题翻译：先进的存储器件具有改进的性能，降低的功率和增加的可靠性
公开(公告)号：US08307270B2
公开(公告)日：2012-11-06
申请号：US12553400
申请日：2009-09-03
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G11C29/00
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要翻译：具有改进性能，降低功耗和增加可靠性的先进内存。存储器件包括存储器阵列，用于接收命令和相关联的数据的接收器，用于对接收到的命令执行错误控制检查的差错控制编码电路以及用于防止相关联的数据被响应地写入存储器阵列的数据屏蔽电路对错误控制编码电路检测接收到的命令中的错误。另一个存储器件包括可编程序序。另一存储器件包括快速退出自刷新模式。另一种存储装置包括由特征装置控制的自动刷新功能。另一存储器件包括由存储器件的特性控制的自动刷新功能。

7. 发明申请

US20100220536A1 ADVANCED MEMORY DEVICE HAVING REDUCED POWER AND IMPROVED PERFORMANCE 有权
标题翻译：具有降低功率的高级存储器件和改进的性能
公开(公告)号：US20100220536A1
公开(公告)日：2010-09-02
申请号：US12394804
申请日：2009-02-27
申请人： Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Kyu-hyoun Kim , Kenneth L. Wright
发明人： Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Kyu-hyoun Kim , Kenneth L. Wright
IPC分类号： G11C7/00 , G11C8/18
CPC分类号： G11C7/22 , G06F13/1689 , G11C7/1051 , G11C7/1057 , G11C7/106 , G11C7/1066 , G11C7/222 , G11C8/12 , Y02D10/14
摘要： A memory device including a memory array storing data, a variable delay controller, a passive variable delay circuit and an output driver. The variable delay controller periodically receives delay commands from a first source external to the memory device during operation of the memory device, and outputs delay instruction bits responsive to the received delay commands. The passive variable delay circuit receives a clock from a second source external to the memory device, receives the delay instruction bits from the variable delay controller, generates a delayed clock having a time relation to the received clock as determined by the delay instruction bits, and outputting the delayed clock. The output driver receives the data from the memory array and the delayed clock, and outputs the data at a time responsive to the delayed clock.
摘要翻译：一种包括存储数据的存储器阵列，可变延迟控制器，无源可变延迟电路和输出驱动器的存储器件。可变延迟控制器在存储器件的操作期间周期性地从存储器件外部的第一源接收延迟命令，并且响应于接收的延迟命令而输出延迟指令位。无源可变延迟电路从存储器件外部的第二源接收时钟，从可变延迟控制器接收延迟指令位，产生与由延迟指令位确定的接收时钟具有时间关系的延迟时钟，以及输出延迟时钟。输出驱动器从存储器阵列和延迟时钟接收数据，并且响应于延迟的时钟一次输出数据。

8. 发明授权

US07948817B2 Advanced memory device having reduced power and improved performance 有权
标题翻译：具有降低的功率和改进的性能的高级存储器件
公开(公告)号：US07948817B2
公开(公告)日：2011-05-24
申请号：US12394804
申请日：2009-02-27
申请人： Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Kyu-hyoun Kim , Kenneth L. Wright
发明人： Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Kyu-hyoun Kim , Kenneth L. Wright
IPC分类号： G11C7/00
CPC分类号： G11C7/22 , G06F13/1689 , G11C7/1051 , G11C7/1057 , G11C7/106 , G11C7/1066 , G11C7/222 , G11C8/12 , Y02D10/14
摘要： A memory device including a memory array storing data, a variable delay controller, a passive variable delay circuit and an output driver. The variable delay controller periodically receives delay commands from a first source external to the memory device during operation of the memory device, and outputs delay instruction bits responsive to the received delay commands. The passive variable delay circuit receives a clock from a second source external to the memory device, receives the delay instruction bits from the variable delay controller, generates a delayed clock having a time relation to the received clock as determined by the delay instruction bits, and outputting the delayed clock. The output driver receives the data from the memory array and the delayed clock, and outputs the data at a time responsive to the delayed clock.
摘要翻译：一种包括存储数据的存储器阵列，可变延迟控制器，无源可变延迟电路和输出驱动器的存储器件。可变延迟控制器在存储器件的操作期间周期性地从存储器件外部的第一源接收延迟命令，并且响应于接收的延迟命令而输出延迟指令位。无源可变延迟电路从存储器件外部的第二源接收时钟，从可变延迟控制器接收延迟指令位，产生与由延迟指令位确定的接收时钟具有时间关系的延迟时钟，以及输出延迟时钟。输出驱动器从存储器阵列和延迟时钟接收数据，并且响应于延迟的时钟一次输出数据。

9. 发明申请

US20120020171A1 MEMORY SYSTEM WITH DELAY LOCKED LOOP (DLL) BYPASS CONTROL 有权
标题翻译：具有延迟锁定（DLL）旁路控制的存储器系统
公开(公告)号：US20120020171A1
公开(公告)日：2012-01-26
申请号：US12840879
申请日：2010-07-21
申请人： Kevin C. Gower , Lisa C. Gower , Kyu-Hyoun Kim , Warren E. Maule
发明人： Kevin C. Gower , Lisa C. Gower , Kyu-Hyoun Kim , Warren E. Maule
IPC分类号： G11C8/18 , G11C7/00
CPC分类号： G11C7/22 , G11C7/222 , G11C2207/2227
摘要： A memory system with delay locked loop (DLL) bypass control including a method for accessing memory that includes receiving a memory read command at a memory device. The memory device is configured to operate in a DLL off-mode to bypass a DLL clock as input to generating a read clock. A DLL power-on command is received at the memory device and in response to receiving the DLL power-on command a DLL initialization process is performed at the memory device. The memory read command is serviced at the memory device operating in the DLL off-mode, the servicing overlapping in time with performing the DLL initialization process. The memory device is configured to operate in a DLL on-mode to utilize the DLL clock as input to generating the read clock in response to a specified period of time elapsing. The specified period of time is relative to receiving the DLL power-on command.
摘要翻译：具有延迟锁定环（DLL）旁路控制的存储器系统，包括用于访问存储器的方法，包括在存储器件处接收存储器读命令。存储器件被配置为以DLL关闭模式操作以绕过DLL时钟作为生成读取时钟的输入。在存储器装置处接收到DLL加电命令，并且响应于接收到DLL加电命令，在存储器件执行DLL初始化处理。存储器读取命令在以DLL关闭模式操作的存储器件处被服务，在执行DLL初始化过程时，服务与时间重叠。存储器装置被配置为以模拟DLL操作以利用DLL时钟作为输入，以响应于经过指定的时间段来生成读取时钟。指定的时间段相对于接收DLL上电命令。

10. 发明授权

US07447831B2 Memory systems for automated computing machinery 有权
标题翻译：自动计算机的存储系统
公开(公告)号：US07447831B2
公开(公告)日：2008-11-04
申请号：US11383989
申请日：2006-05-18
申请人： Daniel M. Dreps , Kevin C. Gower , Warren E. Maule , Robert B. Tremaine
发明人： Daniel M. Dreps , Kevin C. Gower , Warren E. Maule , Robert B. Tremaine
IPC分类号： G06F13/14
CPC分类号： G06F13/1684 , G06F13/1673 , G06F13/1678 , Y02D10/14
摘要： Memory systems are disclosed that include a memory controller and an outbound link with the memory controller connected to the outbound link. The outbound link typically includes a number of conductive pathways that conduct memory signals from the memory controller to memory buffer devices in a first memory layer; and at least two memory buffer devices in a first memory layer. Each memory buffer device in the first memory layer typically is connected to the outbound link to receive memory signals from the memory controller.
摘要翻译：公开了包括存储器控制器和与存储器控制器连接到出站链路的出站链路的存储器系统。出站链路通常包括将存储器信号从存储器控制器传送到第一存储器层中的存储器缓冲器件的多个导电路径; 以及在第一存储器层中的至少两个存储缓冲器件。第一存储器层中的每个存储器缓冲器件通常连接到出站链路以从存储器控制器接收存储器信号。

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