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    • 1. 发明授权
    • Projection optical apparatus
    • 投影光学仪器
    • US4704020A
    • 1987-11-03
    • US903500
    • 1986-09-04
    • Masaichi MurakamiHidemi KawaiKyoichi Suwa
    • Masaichi MurakamiHidemi KawaiKyoichi Suwa
    • H01L21/30G03F9/00H01L21/027H01L21/66H01L21/67G01B11/26
    • G03F9/7023
    • A projection optical apparatus for projecting the pattern of a mask onto a substrate through a projection optical system includes a stage for supporting thereon a substrate having a plurality of marks for detection on the surface thereof, first detecting means for detecting the amount of inclination of the surface of the substrate relative to the surface on which the pattern is projected and imaged, through the projection optical system, second detecting means for detecting the amount of inclination of the surface of the substrate relative to a predetermined reference plane independently of the projection optical system, and calibrating means for calibrating the amount of inclination detected by the second detecting means on the basis of the amount of inclination detected by the first detecting means.
    • 一种用于通过投影光学系统将掩模的图案投影到基板上的投影光学装置包括:用于在其上表面支撑具有多个用于检测的标记的基板的台,用于检测其上的倾斜量的第一检测装置 通过投影光学系统相对于图案投射和成像的表面的基板的表面,用于独立于投影光学系统检测基板相对于预定参考平面的表面的倾斜量的第二检测装置 以及校准装置,用于基于由第一检测装置检测到的倾斜量来校准由第二检测装置检测到的倾斜量。
    • 2. 发明授权
    • Method of aligning a semiconductor substrate and a photomask
    • 对准半导体衬底和光掩模的方法
    • US4679942A
    • 1987-07-14
    • US703941
    • 1985-02-21
    • Kyoichi SuwaHidemi KawaiMasaichi Murakami
    • Kyoichi SuwaHidemi KawaiMasaichi Murakami
    • G03F9/00G01B11/00
    • G03F9/7092G03F9/7023G03F9/7076
    • This specification discloses an alignment method for aligning a photomask with a substrate covered with a photosensitive layer and printing the pattern of the photomask on the substrate. The method comprises the steps of providing a reference mark on the photomask, providing on the substrate a pair of alignment marks correlated to the reference mark, the pair of alignment marks being spaced apart from each other by a predetermined distance in a mark area, one of the pair of alignment marks being formed projectedly relative to the surroundings thereof and the other alignment mark being formed as a depression relative to the surroundings thereof, providing the photosensitive layer on the substrate so that the outermost surface of the layer is substantially flat, and imaging the reference mark and the pair of alignment marks superposedly on an imaging plane by a light having a single wavelength. The specification also discloses a photomask and an apparatus for executing such method.
    • 本说明书公开了一种用于将光掩模与被感光层覆盖的基板对准并将光掩模的图案印刷在基板上的对准方法。 该方法包括以下步骤:在光掩模上提供参考标记,在基板上提供与参考标记相关的一对对准标记,该对对准标记在标记区域中彼此间隔开预定距离,一个对准标记 一对对准标记相对于其周围突出地形成,另一个对准标记相对于其周围形成为凹陷,在基板上提供感光层,使得该层的最外表面基本上平坦,以及 通过具有单一波长的光将参考标记和一对对准标记叠加在成像平面上。 本说明书还公开了一种光掩模和用于执行这种方法的装置。
    • 3. 发明授权
    • Projection-exposing apparatus
    • 投影曝光装置
    • US4806987A
    • 1989-02-21
    • US135377
    • 1987-12-21
    • Takashi MoriKoichi MatsumotoTsutomu TakaiMasaichi MurakamiKyoichi Suwa
    • Takashi MoriKoichi MatsumotoTsutomu TakaiMasaichi MurakamiKyoichi Suwa
    • H01L21/30G03F7/20H01L21/027G03B27/42
    • G03F7/70475
    • A projection-exposing apparatus comprises a projecting optical system for projecting an image of a reticle having a predetermined pattern onto a wafer, and a stage for causing a relative shifting movement between a position of the wafer and a position of the reticle. A first exposure is effected for projecting and exposing the reticle image pattern from the projection optical system in a first area on the wafer and then the stage is shifted by a predetermined amount to effect second exposure for projecting and exposing the reticle image pattern in a second area positioned adjacent to the first area on the wafer thereby the reticle image being projected and exposed onto different areas on the same wafer. The stage causes the relative shifting movement between the reticle and the wafer in such a manner that the reticle image pattern obtained by the first exposure and the reticle image pattern obtained by the second exposure are overlapped with each other on the wafer by a predetermined amount.
    • 投影曝光装置包括投影光学系统,用于将具有预定图案的掩模版的图像投影到晶片上,以及用于在晶片的位置和光罩之间进行相对移动的台。 进行第一曝光以在晶片上的第一区域中投影和曝光来自投影光学系统的标线片图像图案,然后将该台移动预定量,以进行第二次曝光,以在第二曝光中投影和曝光标线图像图案 区域定位成与晶片上的第一区域相邻,从而掩模版图像被投影并暴露在同一晶片上的不同区域上。 该阶段以这样的方式引起标线片和晶片之间的相对移动运动,使得通过第一曝光获得的标线图像图案和通过第二次曝光获得的标线图像图案在晶片上彼此重叠预定量。
    • 5. 发明授权
    • Direct reticle to wafer alignment using fluorescence for integrated
circuit lithography
    • 使用荧光进行集成电路光刻的直接光罩到晶圆对准
    • US5838450A
    • 1998-11-17
    • US457710
    • 1995-06-02
    • John H. McCoyMartin E. LeeKyoichi Suwa
    • John H. McCoyMartin E. LeeKyoichi Suwa
    • G01B11/00G03F7/20G03F9/00H01L21/027
    • G03F9/7084G03F7/70358G03F7/70425G03F9/7076
    • A mask alignment system for integrated circuit lithography achieves reticle to wafer referencing. A detection system located below the main projection lens detects the image of reticle alignment marks while also detecting wafer alignment marks. The reticle marks are imaged in light at the exposure wavelength. A first detection method images the fluorescence produced in the photoresist by the reticle mark images. A microscope located below the main projection lens produces the image and also images the wafer marks with broadband non-actinic illumination. The second method images the reticle marks in exposure light using a microscope which images and detects the exposure wavelength while maintaining the illumination and detection of the wafer marks. The third method collects directly both the exposure light and fluorescent light that is scattered and reflected from the wafer surface; the presence of wafer alignment marks changes this light collection. Scanning the wafer relative to the reticle produces a signal indicating the relative position of reticle and wafer alignment marks. All three methods provide information for complete field-by-field alignment including offsets, reticle-to-wafer magnification, rotation, and skew for both step-and-repeat and scanning exposure systems.
    • 用于集成电路光刻的掩模对准系统实现了光栅到晶片参考。 位于主投影透镜下方的检测系统检测标线对准标记的图像,同时检测晶片对准标记。 掩模版标记以曝光波长的光照成像。 第一检测方法通过标线图像对在光致抗蚀剂中产生的荧光进行成像。 位于主投影透镜下方的显微镜产生图像,并且还利用宽带非光化照明对晶片标记进行成像。 第二种方法使用显微镜在曝光光下对掩模版标记进行成像,并在保持照明和晶片标记的检测的同时检测曝光波长。 第三种方法直接收集从晶片表面散射和反射的曝光光和荧光; 晶片对准标记的存在会改变这种光集合。 相对于掩模版扫描晶片产生指示标线片和晶片对准标记的相对位置的信号。 所有这三种方法提供了完整的逐场校准的信息,包括步进重复扫描和扫描曝光系统的偏移量,标尺到晶圆倍率,旋转和偏斜。
    • 8. 发明授权
    • Double-conjugate maintaining optical system
    • 双共轭保持光学系统
    • US4592625A
    • 1986-06-03
    • US469015
    • 1983-02-23
    • Makoto UeharaSatoru AnzaiKyoichi Suwa
    • Makoto UeharaSatoru AnzaiKyoichi Suwa
    • G02B13/22G02B19/00G02B21/08G02B27/00G03F7/20G01B11/00
    • G03F7/70241G02B13/22
    • A double-conjugate maintaining optical system for maintaining the conjugate relation between an object and its image even if the distance between the object and the image varies and also maintaining another set of conjugate relation in a predetermined condition includes an afocal system comprising a plurality of lens units, a first positive lens unit disposed on the object side of the afocal system, and a second positive lens unit disposed on the image side of the afocal system. The first positive lens unit is movable relative to the second positive lens unit so that the object is positioned on the focal plane of the first positive lens unit opposite to the afocal system. The afocal system is movable along the optical axis thereof in a predetermined relation with the first positive lens unit.
    • 即使物体与图像之间的距离发生变化并且在预定条件下也保持另一组共轭关系的双重共轭维持光学系统,用于保持物体与其图像之间的共轭关系,包括包括多个透镜的无焦点系统 设置在无焦点系统的物体侧的第一正透镜单元和设置在无焦系统的像侧上的第二正透镜单元。 第一正透镜单元可相对于第二正透镜单元移动,使得物体位于与无焦系统相对的第一正透镜单元的焦平面上。 无焦点系统可以沿其光轴以与第一正透镜单元预定的关系移动。
    • 9. 发明授权
    • Alignment apparatus
    • 校准装置
    • US4566795A
    • 1986-01-28
    • US586639
    • 1984-03-06
    • Toshio MatsuuraKyoichi Suwa
    • Toshio MatsuuraKyoichi Suwa
    • H01L21/30G01B11/00G03F7/20G03F9/00H01L21/027G01B11/27
    • G03F9/7046G03F7/70358G03F9/7049
    • An alignment apparatus for aligning one of the substrates with the other by means of first and second reference marks comprises scanning means including a light beam generating means for reciprocally scanning first and second areas respectively by a light beam, discrimination means for generating a discrimination signal indicative of the scanning direction by the scanning means in synchronism with the scanning, first photoelectric means for generating a first signal when the first photoelectric means receives the light beam transmitted through a first area and separated by the first reference mark, second photoelectric means for generating a second signal when the second photoelectric means receives the light beam transmitted through the second area and separated by the second reference mark, operation means for determining the direction and amount of the relative deviation between the first and second reference marks from the first and second signals and from the discrimination signal, and means for moving one of the substrates relative to the other in response to the operation means. The alignment apparatus is simple in structure and can detect alignment marks with higher accuracy. The alignment apparatus enables the alignment of a wafer with a reticle or mask at higher speed and with higher preciseness.
    • 用于通过第一和第二参考标记将一个基板与另一个基板对准的对准装置包括扫描装置,其包括用于分别由光束往复扫描第一和第二区域的光束产生装置,用于产生指示 所述第一光电装置用于当所述第一光电装置接收到透过第一区域并被所述第一参考标记分开的光束时产生第一信号;第二光电装置,用于产生第一信号, 第二信号,当第二光电装置接收到通过第二区域传输并被第二参考标记分隔的光束时,用于确定第一和第二参考标记与第一和第二信号之间的相对偏离的方向和量的操作装置,以及 从辨别信号 以及用于响应于操作装置移动基板之一相对于另一个的装置。 对准装置结构简单,可以更精确地检测对准标记。 对准装置使得能够以更高的速度和更高的精度将晶片与掩模版或掩模对准。