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    • 1. 发明申请
      US20060043534A1 Microfeature dies with porous regions, and associated methods and systems 审中-公开
    • Microfeature dies with porous regions, and associated methods and systems
    • 具有多孔区域的微特征，以及相关的方法和系统
    • US20060043534A1
    • 2006-03-02
    • US10927486
    • 2004-08-26
    • Kyle Kirby , Paul Morgan
    • Kyle Kirby , Paul Morgan
    • H01L29/06
    • H01L21/76898 , H01L21/02126 , H01L21/02203 , H01L21/02321 , H01L21/02323 , H01L21/02337 , H01L21/02343 , H01L21/02351 , H01L21/31695 , H01L21/743 , H01L21/78
    • Microfeature dies with porous regions, and associated methods and systems are disclosed. A method in accordance with one embodiment of the invention includes forming a porous region between a die and a remainder portion of a microfeature workpiece, and separating the die from the remainder portion by removing at least a portion of the porous region. For example, the die can be removed from the remainder portion by making a cut at the porous region (e.g., with a rotating saw blade), etching material from the porous region, or directing a water jet at the porous region. In other embodiments, a porous region of the microfeature workpiece can receive conductive material to form a conductive pathway (e.g., a line and/or via) in the workpiece. In still further embodiments, the porous regions of the workpiece can be formed electrolytically with electrodes that are spaced apart from the workpiece and/or support relative movement between the electrodes and the workpiece.
    • 具有多孔区域的微特征模具以及相关方法和系统被公开。 根据本发明的一个实施例的方法包括在模具和微特征工件的剩余部分之间形成多孔区域，并且通过去除多孔区域的至少一部分将模具与其余部分分离。 例如，通过在多孔区域（例如，利用旋转的锯片）进行切割，从多孔区域蚀刻材料，或者在多孔区域引导水射流，可以将模具从剩余部分中除去。 在其他实施例中，微特征工件的多孔区域可以接收导电材料以在工件中形成导电路径（例如，线路和/或通孔）。 在另外的实施例中，可以用与工件间隔开的电极和/或支撑电极和工件之间的相对运动来电解形成工件的多孔区域。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 2. 发明申请
      US20070099397A1 Microfeature dies with porous regions, and associated methods and systems 审中-公开
    • Microfeature dies with porous regions, and associated methods and systems
    • 具有多孔区域的微特征，以及相关的方法和系统
    • US20070099397A1
    • 2007-05-03
    • US11634417
    • 2006-12-04
    • Kyle Kirby , Paul Morgan
    • Kyle Kirby , Paul Morgan
    • H01L21/00
    • H01L21/76898 , H01L21/02126 , H01L21/02203 , H01L21/02321 , H01L21/02323 , H01L21/02337 , H01L21/02343 , H01L21/02351 , H01L21/31695 , H01L21/743 , H01L21/78
    • Microfeature dies with porous regions, and associated methods and systems are disclosed. A method in accordance with one embodiment of the invention includes forming a porous region between a die and a remainder portion of a microfeature workpiece, and separating the die from the remainder portion by removing at least a portion of the porous region. For example, the die can be removed from the remainder portion by making a cut at the porous region (e.g., with a rotating saw blade), etching material from the porous region, or directing a water jet at the porous region. In other embodiments, a porous region of the microfeature workpiece can receive conductive material to form a conductive pathway (e.g., a line and/or via) in the workpiece. In still further embodiments, the porous regions of the workpiece can be formed electrolytically with electrodes that are spaced apart from the workpiece and/or support relative movement between the electrodes and the workpiece.
    • 具有多孔区域的微特征模具以及相关方法和系统被公开。 根据本发明的一个实施例的方法包括在模具和微特征工件的剩余部分之间形成多孔区域，并且通过去除多孔区域的至少一部分将模具与其余部分分离。 例如，通过在多孔区域（例如，利用旋转的锯片）进行切割，从多孔区域蚀刻材料，或者在多孔区域引导水射流，可以将模具从剩余部分中除去。 在其他实施例中，微特征工件的多孔区域可以接收导电材料以在工件中形成导电路径（例如，线路和/或通孔）。 在另外的实施例中，可以用与工件间隔开的电极和/或支撑电极和工件之间的相对运动来电解形成工件的多孔区域。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 5. 发明授权
      US08119535B2 Pitch reduced patterns relative to photolithography features 有权
    • Pitch reduced patterns relative to photolithography features
    • 相对于光刻特征的间距减小
    • US08119535B2
    • 2012-02-21
    • US12636581
    • 2009-12-11
    • Luan Tran , William T Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K Abatchev , Gurtej S Sandhu , D. Mark Durcan
    • Luan Tran , William T Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K Abatchev , Gurtej S Sandhu , D. Mark Durcan
    • H01L21/302 , H01L21/461
    • H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
    • Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
    • 通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。 间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。 间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。 然后在无定形碳的侧壁上形成侧壁间隔物。 去除无定形碳，留下限定第一掩模图案的侧壁间隔物。 然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。 接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。 通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。 然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。 具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 9. 发明申请
      US20070161251A1 PITCH REDUCED PATTERNS RELATIVE TO PHOTOLITHOGRAPHY FEATURES 失效
    • PITCH REDUCED PATTERNS RELATIVE TO PHOTOLITHOGRAPHY FEATURES
    • 相对于光刻特征的PITCH减少图案
    • US20070161251A1
    • 2007-07-12
    • US11681027
    • 2007-03-01
    • Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
    • Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
    • H01L21/302
    • H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
    • Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
    • 通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。 间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。 间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。 然后在无定形碳的侧壁上形成侧壁间隔物。 去除无定形碳，留下限定第一掩模图案的侧壁间隔物。 然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。 接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。 通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。 然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。 具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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