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1. 发明申请

US20060289383A1 Composition for removing conductive materials and manufacturing method of array substrate using the same 有权
标题翻译：用于除去导电材料的组合物及使用其的阵列基板的制造方法
公开(公告)号：US20060289383A1
公开(公告)日：2006-12-28
申请号：US11452387
申请日：2006-06-14
申请人： Kye-Chan Song , Jong Kim , Kyoung-Mook Lee , Sam-Young Cho , Hyun-Cheol Kim , Nam-Seo Kim
发明人： Kye-Chan Song , Jong Kim , Kyoung-Mook Lee , Sam-Young Cho , Hyun-Cheol Kim , Nam-Seo Kim
IPC分类号： C30B33/00 , C09K13/06 , C09K13/00 , B44C1/22
CPC分类号： C23F1/16 , C09K13/06 , C23F1/20 , C23F1/26 , G02F1/13439 , G02F2001/136295
摘要： A composition for removing a conductive material and a manufacturing method of an array substrate using the composition, wherein the composition may include a nitric acid of about 3 to 15 wt %, a phosphoric acid of about 40 to 70 wt %, an acetic acid of about 5 to 35 wt %. The composition may further include a chlorine compound of about 0.05 to 5 wt %, a chlorine stabilizer of about 0.01 to 5 wt %, a pH stabilizer of about 0.01 to 5 wt %, and water of residual quantity.
摘要翻译：用于除去导电材料的组合物和使用该组合物的阵列基板的制造方法，其中所述组合物可以包括约3至15重量％的硝酸，约40至70重量％的磷酸，约5〜35重量％。该组合物可以进一步包括约0.05-5重量％的氯化合物，约0.01至5重量％的氯稳定剂，约0.01至5重量％的pH稳定剂和残留量的水。

2. 发明授权

US07686968B2 Composition for removing conductive materials and manufacturing method of array substrate using the same 有权
标题翻译：用于除去导电材料的组合物及使用其的阵列基板的制造方法
公开(公告)号：US07686968B2
公开(公告)日：2010-03-30
申请号：US11452387
申请日：2006-06-14
申请人： Kye-Chan Song , Jong-Il Kim , Kyoung-Mook Lee , Sam-Young Cho , Hyun-Cheol Shin , Nam-Seo Kim
发明人： Kye-Chan Song , Jong-Il Kim , Kyoung-Mook Lee , Sam-Young Cho , Hyun-Cheol Shin , Nam-Seo Kim
IPC分类号： G02F1/1333
CPC分类号： C23F1/16 , C09K13/06 , C23F1/20 , C23F1/26 , G02F1/13439 , G02F2001/136295
摘要： A composition for removing a conductive material and a manufacturing method of an array substrate using the composition, wherein the composition may include a nitric acid of about 3 to 15 wt %, a phosphoric acid of about 40 to 70 wt %, an acetic acid of about 5 to 35 wt %. The composition may further include a chlorine compound of about 0.05 to 5 wt %, a chlorine stabilizer of about 0.01 to 5 wt %, a pH stabilizer of about 0.01 to 5 wt %, and water of residual quantity.
摘要翻译：用于除去导电材料的组合物和使用该组合物的阵列基板的制造方法，其中所述组合物可以包括约3至15重量％的硝酸，约40至70重量％的磷酸，约5〜35重量％。该组合物可以进一步包括约0.05-5重量％的氯化合物，约0.01至5重量％的氯稳定剂，约0.01至5重量％的pH稳定剂和残留量的水。

3. 发明申请

US20090104724A1 Method of manufacturing liquid crystal display device 有权
标题翻译：制造液晶显示装置的方法
公开(公告)号：US20090104724A1
公开(公告)日：2009-04-23
申请号：US12285509
申请日：2008-10-07
申请人： Kye-Chan Song , Jeong Oh Kim , Young Kwon Kang
发明人： Kye-Chan Song , Jeong Oh Kim , Young Kwon Kang
IPC分类号： G02F1/1333
CPC分类号： G02F1/134363 , G02F2001/136231 , G02F2201/124 , G02F2201/40
摘要： A method of manufacturing a liquid crystal display device which includes pixel electrodes and common electrodes which are alternatively arranged in each pixel defined on a substrate, including the steps of: forming a conductive film on the substrate; forming a mask layer, of which etching selection ratio is different from the conductive layer, on the conductive layer; forming a photo-resist pattern of a fixed pattern on the mask layer; forming a mask pattern, which has an undercut shape to the photo-resist pattern, by etching the mask layer by use of the photo-resist pattern as an etching mask; removing the photo-resist pattern; and etching the conductive film by use of the mask pattern as an etching mask, to provide at least any one of the common electrode and the pixel electrode.
摘要翻译：一种制造液晶显示装置的方法，该液晶显示装置包括在基板上限定的每个像素中交替布置的像素电极和公共电极，包括以下步骤：在基板上形成导电膜; 在导电层上形成蚀刻选择比不同于导电层的掩模层; 在掩模层上形成固定图案的光刻胶图案; 通过使用光刻胶图案作为蚀刻掩模蚀刻掩模层，形成具有底切形状的光刻胶图案的掩模图案; 去除光刻胶图案; 并且通过使用掩模图案作为蚀刻掩模蚀刻导电膜，以提供公共电极和像素电极中的至少任一个。

4. 发明授权

US08461054B2 Method of manufacturing liquid crystal display device 有权
公开(公告)号：US08461054B2
公开(公告)日：2013-06-11
申请号：US12285509
申请日：2008-10-07
申请人： Kye-Chan Song , Jeong Oh Kim , Young Kwon Kang
发明人： Kye-Chan Song , Jeong Oh Kim , Young Kwon Kang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G02F1/134363 , G02F2001/136231 , G02F2201/124 , G02F2201/40
摘要： A method of manufacturing a liquid crystal display device which includes pixel electrodes and common electrodes which are alternatively arranged in each pixel defined on a substrate, including the steps of: forming a conductive film on the substrate; forming a mask layer, of which etching selection ratio is different from the conductive layer, on the conductive layer; forming a photo-resist pattern of a fixed pattern on the mask layer; forming a mask pattern, which has an undercut shape to the photo-resist pattern, by etching the mask layer by use of the photo-resist pattern as an etching mask; removing the photo-resist pattern; and etching the conductive film by use of the mask pattern as an etching mask, to provide at least any one of the common electrode and the pixel electrode.

5. 发明授权

US08153462B2 Method of manufacturing liquid crystal display device 有权
标题翻译：制造液晶显示装置的方法
公开(公告)号：US08153462B2
公开(公告)日：2012-04-10
申请号：US12568824
申请日：2009-09-29
申请人： Kang-Il Kim , Joon-Young Yang , Kye-Chan Song , Soopool Kim , Young-Kwon Kang
发明人： Kang-Il Kim , Joon-Young Yang , Kye-Chan Song , Soopool Kim , Young-Kwon Kang
IPC分类号： H01L21/00
CPC分类号： H01L27/12 , G02F1/1368 , H01L27/124
摘要： A method of manufacturing a liquid crystal display device is provided which includes ashing first and second photoresist patterns, whereby a copper oxide film is formed at portions of a data line and a source-drain pattern exposed between the ashed first and second photoresist patterns and between the ashed first and second portions of the first photoresist pattern; deoxidizing or removing the copper oxide film; performing a plasma treatment to change the exposed portions of the data line and the source-drain pattern into a copper compound; removing the copper compound using a copper compound removing solution to form source and drain electrodes below the ashed first and second portions, respectively, wherein the copper compound removing solution substantially has no reaction with the copper group material; dry-etching a portion of an ohmic contact layer between the source and drain electrodes using the source and drain electrodes as an etching mask, the ohmic contact layer formed by patterning the impurity-doped amorphous silicon layer.
摘要翻译：提供一种制造液晶显示装置的方法，其包括灰化第一和第二光致抗蚀剂图案，由此在数据线和暴露在灰化的第一和第二光致抗蚀剂图案之间的源极 - 漏极图案的部分处形成氧化铜膜，第一光致抗蚀剂图案的灰色第一和第二部分; 脱氧或除去氧化铜膜; 执行等离子体处理以将数据线和源极 - 漏极图案的暴露部分改变为铜化合物; 使用铜化合物去除溶液除去铜化合物，以分别在灰化的第一和第二部分之下形成源极和漏极，其中铜化合物除去溶液基本上与铜基材料没有反应; 使用源极和漏极作为蚀刻掩模来干蚀刻源极和漏极之间的欧姆接触层的一部分，该欧姆接触层通过图案化掺杂杂质的非晶硅层而形成。

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